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Vishay Siliconix SUD35N10-26P-GE3
- Part No.:
- SUD35N10-26P-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD35N10-26P-GE3.pdf
- Description:
- MOSFET N-CH 100V 35A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:1,914
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Product details
Overview
SUD35N10-26P-GE3 from Vishay Siliconix is an N-channel enhancement-mode TrenchFET® power MOSFET rated for 100 V drain-source voltage, 35 A continuous drain current at TC = 25 °C, and 26 mΩ typical RDS(on) at VGS = 10 V. It features 31 nC total gate charge, 100% UIS tested, and is optimized as a primary-side switch in offline SMPS topologies.
For engineers reviewing the SUD35N10-26P-GE3 datasheet, SUD35N10-26P-GE3 pinout, SUD35N10-26P-GE3 application, or SUD35N10-26P-GE3 equivalent, key selection criteria include its TO-252 package thermal performance (RthJC = 1.5 °C/W), body diode recovery characteristics (trr = 50 ns typ.), and robust avalanche energy rating (EAS = 55 mJ).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 31 nC). Its 100 V VDS rating supports universal-input AC/DC flyback and LLC resonant converters operating up to 400 V DC bus.
The device integrates a co-packaged body diode with specified reverse recovery time (trr = 50–75 ns) and Qrr = 100–150 nC, enabling reliable operation in hard-switched primary-side configurations without external snubbing in moderate-frequency designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports 400 V DC link with 2× safety margin in offline SMPS |
| RDS(on) | 0.026 Ω @ VGS = 10 V - Enables <1 W conduction loss at 20 A ID |
| ID (cont.) | 35 A @ TC = 25 °C - Requires heatsinking above ~50 °C case temperature |
| Qg | 31 nC - Determines gate driver power requirement and switching speed trade-off |
| EAS | 55 mJ - Withstands single-pulse inductive energy without failure under UIS test |
| trr / Qrr | 50 ns / 100 nC - Limits diode recovery losses and EMI in hard-switched topologies |
| RthJC | 1.5 °C/W - Enables high-power dissipation when mounted to copper heatsink |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 1.5 Ω gate resistance limits ringing and dV/dt-induced turn-on |
| D (Drain) | High-side power terminal | Connected internally to exposed metal tab; must be soldered to large copper area for thermal management |
| S (Source) | Power return and reference node | Serves as local ground reference for gate drive; critical for minimizing common-source inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 26 mΩ RDS(on) in TO-252, enabling higher efficiency than planar MOSFETs of same size |
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress without derating |
| Low Qgd / Qgs ratio | Qgd = 9 nC, Qgs = 10 nC - Reduces Miller plateau duration and improves dv/dt immunity |
| Enhanced body diode | trr = 50 ns, VSD = 0.8–1.2 V @ IS = 10 A - Low forward drop and fast recovery reduce dead-time losses |
| Lead (Pb)-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile; compatible with standard SnAgCu soldering processes |
Applications
| AC/DC Flyback Converter | LLC Resonant Converter |
|---|---|
Use Scenario: Primary-side switch in 65–300 W universal-input offline adapter with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage, medium-current switching element driven by PWM controller; handles full input power conversion cycle. Use Value: 26 mΩ RDS(on) reduces conduction loss by >30% vs. comparable 40 mΩ DPAK MOSFETs, improving full-load efficiency by ~0.8%. | Use Scenario: Primary-side half-bridge switch in 150–500 W server PSU with ZVS operation. IC Role / Device Role / Timing Role: Fast-switching power switch synchronized to resonant tank zero-voltage transitions. Use Value: 31 nC Qg and low Coss (180 pF) enable efficient ZVS at 300–500 kHz, reducing switching loss by ~25% versus higher-Qg alternatives. |
| Industrial Motor Drive Inverter | DC-DC Boost Converter |
Use Scenario: Low-side switch in 24–48 V BLDC inverter stage driving 1–3 kW PMSM loads. IC Role / Device Role / Timing Role: Pulse-width modulated power switch controlling phase current commutation. Use Value: 50 A pulsed drain current (IDM) and 55 mJ EAS support motor stall and short-circuit fault conditions without failure. | Use Scenario: Main switch in 12 V–48 V input, 400 V output boost converter for solar microinverters. IC Role / Device Role / Timing Role: High-duty-cycle, high-VDS switching element handling continuous 15–25 A currents. Use Value: 100 V rating and 1.5 °C/W RthJC allow stable operation at 83 W PD with minimal heatsink, simplifying mechanical design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP35NF10 | TO-220 package, 35 A/100 V, RDS(on) = 30 mΩ @ 10 V, Qg = 42 nC | Higher thermal resistance (RthJC = 1.5 °C/W same, but no drain-tab soldering); larger footprint | Preferred where through-hole mounting or higher peak current (IDM = 140 A) is required |
| IRF540NPBF | TO-220, 33 A/100 V, RDS(on) = 44 mΩ @ 10 V, Qg = 71 nC, no UIS rating | Higher conduction and switching losses; not UIS-tested; lower reliability in inductive switching | Only suitable for low-cost, non-critical linear or low-frequency switching applications |
Compared with STP35NF10 and IRF540NPBF, the SUD35N10-26P-GE3 delivers superior thermal performance via TO-252 drain-tab soldering, lower gate charge for faster switching, and guaranteed UIS ruggedness-making it optimal for compact, high-efficiency, high-reliability SMPS primary-side designs.
Availability
SUD35N10-26P-GE3 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial motor drives, solar boost converters, and LLC resonant power supplies requiring stable component supply and long-term manufacturability.
Supply support for SUD35N10-26P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SUD35N10-26P-GE3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered specifically for high-frequency, high-efficiency primary-side switching in space-constrained AC/DC and isolated DC/DC converters.
FAQ
What is the maximum continuous drain current rating for the SUD35N10-26P-GE3 at 70 °C case temperature?
The SUD35N10-26P-GE3 supports 32 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from the 35 A rating at TC = 25 °C and ensures safe operation within junction temperature limits when properly heatsinked. The SUD35N10-26P-GE3 must be mounted on ≥1" × 1" FR4 with 2 oz copper to achieve this rating.
Does the SUD35N10-26P-GE3 have a fully characterized body diode for synchronous rectification?
No-the SUD35N10-26P-GE3 body diode is optimized for freewheeling and clamping, not synchronous rectification. Its trr = 50–75 ns and Qrr = 100–150 nC are suitable for hard-switched primary-side use, but it lacks the low VSD and ultra-fast recovery needed for secondary-side SR. For synchronous rectification, dedicated low-VF Schottky or logic-level MOSFETs are recommended instead of relying on the SUD35N10-26P-GE3 body diode.
Can the SUD35N10-26P-GE3 be driven directly from a 3.3 V microcontroller GPIO?
No-the SUD35N10-26P-GE3 has a gate threshold voltage range of 2.5–4.4 V and requires ≥10 V VGS for full enhancement (RDS(on) = 0.026 Ω). At 3.3 V, it remains in weak inversion with RDS(on) >1 Ω, causing excessive heating. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required to deliver 10–15 V drive to the SUD35N10-26P-GE3 gate.
What is the safe operating area (SOA) limitation for the SUD35N10-26P-GE3 at 100 V VDS and 10 A ID?
At VDS = 100 V and ID = 10 A, the SUD35N10-26P-GE3 operates within its DC SOA limit only for pulse widths ≤10 ms, as shown in the Safe Operating Area graph (Figure 10). Continuous DC operation at this point exceeds the package's 8.3 W ambient-limited power dissipation. For sustained 100 V/10 A operation, active cooling or reduced duty cycle is mandatory to keep TJ ≤ 175 °C. The SUD35N10-26P-GE3 SOA is primarily limited by RDS(on) heating, not avalanche.
Is the SUD35N10-26P-GE3 suitable for automotive applications per AEC-Q101?
No-the SUD35N10-26P-GE3 is not AEC-Q101 qualified. While it meets industrial temperature range (−55 °C to +175 °C), Vishay does not list it in their AEC-Q101 product portfolio. For automotive primary-side switching, consider the AEC-Q101-qualified SiHFR100N10E or SiHF100N10E instead. The SUD35N10-26P-GE3 is intended for commercial/industrial power supplies, not automotive ECUs or ADAS systems.
SUD35N10-26P-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 8.3W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SUD35N10-26P-GE3 FAQ
1.How can I place an order for SUD35N10-26P-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD35N10-26P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD35N10-26P-GE3 reliable?
The price and inventory of SUD35N10-26P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD35N10-26P-GE3 is usually 5 days.
3.What payment methods are accepted for SUD35N10-26P-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD35N10-26P-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD35N10-26P-GE3?
SUD35N10-26P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD35N10-26P-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD35N10-26P-GE3?
For technical support, including SUD35N10-26P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD35N10-26P-GE3 requirements.
6.How does Aetrix verify that SUD35N10-26P-GE3 is sourced from the original manufacturer or authorized distributors?
All SUD35N10-26P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD35N10-26P-GE3 meets industry standards.
7.What is the process for return or replacement of SUD35N10-26P-GE3?
All SUD35N10-26P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD35N10-26P-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD35N10-26P-GE3 part is unused and in its original packaging.
Return procedure for SUD35N10-26P-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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