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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD35N10-26P-T4GE3

Name: SUD35N10-26P-T4GE3
Brand: Vishay Siliconix
SKU: SUD35N10-26P-T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD35N10-26P-T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD35N10-26P-T4GE3.pdf

Description:: MOSFET N-CH 100V 35A TO252

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Product details

Overview

SUD35N10-26P-T4GE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® power MOSFET in TO-252 (DPAK) package, rated for 35 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.026 Ω at V_GS = 10 V and Q_g = 31 nC - optimized for primary-side switching in offline AC/DC flyback converters.

For engineers reviewing the SUD35N10-26P-T4GE3 datasheet, SUD35N10-26P-T4GE3 pinout, SUD35N10-26P-T4GE3 application, or SUD35N10-26P-T4GE3 equivalent, key selection criteria include its 100 V V_DS, 100% UIS-tested ruggedness, low gate charge for high-frequency hard-switching, and thermally enhanced TO-252 package with drain-connected tab.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) while maintaining robust avalanche capability (E_AS = 55 mJ). Its gate threshold voltage (V_GS(th) = 2.5–4.4 V) supports standard 10 V gate drive, and its dynamic parameters - C_iss = 2000 pF, C_oss = 180 pF, C_rss = 60 pF - enable predictable switching behavior in discontinuous conduction mode (DCM) flyback topologies.

The device features a fully characterized body diode with t_rr = 50–75 ns and Q_rr = 100–150 nC, enabling reliable operation in self-driven synchronous rectification or freewheeling roles. Thermal resistance R_thJC = 1.5 °C/W (typ.) allows efficient heat transfer to PCB copper when mounted on ≥1" × 1" FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 85–265 VAC input with margin for line surges and reflected voltage spikes in flyback designs.
R_DS(on)	0.026 Ω @ V_GS = 10 V - enables <1 W conduction loss at 20 A, reducing thermal stress in compact power supplies.
I_D (cont)	35 A @ T_C = 25 °C - defines maximum safe DC current with heatsink; derates to 32 A at T_C = 70 °C.
Q_g	31 nC (typ.) - determines gate driver power requirement and switching speed; enables >300 kHz operation with low driver loss.
E_AS	55 mJ - guarantees single-pulse avalanche energy handling without failure, critical for overvoltage transients during no-load or startup.
t_rr	50–75 ns - limits reverse recovery losses and EMI generation when used as freewheeling switch or in quasi-resonant circuits.
R_thJC	1.5 °C/W (typ.) - enables direct thermal path from junction to case (drain tab), supporting high-power density layouts with minimal copper area.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, with drain connected to exposed metal tab for thermal and electrical connection. Dimensions per Vishay Doc. #71197 (Rev. 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives gate drive signal; requires ≤±20 V rating; low input capacitance (C_iss = 2000 pF) eases driver design.
D (Drain)	High-side power terminal	Connected internally to exposed tab; must be soldered to large copper pour for thermal management and low-inductance return path.
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; source inductance directly impacts switching stability and dV/dt immunity.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for TO-252, enabling smaller PCB footprints without sacrificing conduction loss.
100% UIS tested	Every unit validated for unclamped inductive switching robustness - eliminates field failures due to transformer leakage energy.
Drain-connected tab	Provides low-thermal-resistance path (R_thJC = 1.5 °C/W) and low-inductance power return, critical for EMI control in high-dV/dt applications.
Low Q_gd/Q_g ratio	Q_gd = 9 nC of total Q_g = 31 nC - improves Miller immunity and enables stable operation with moderate gate resistors in high-side configurations.
Specified body diode Q_rr	Q_rr = 100–150 nC - enables accurate loss modeling for freewheeling or synchronous rectification use cases without reliance on typical-only data.

Applications

AC/DC Flyback Converter	Industrial LED Driver
Use Scenario: Primary-side switch in isolated 12–24 W offline flyback power supply for smart home controllers. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from primary to secondary winding during each switching cycle. Use Value: Low R_DS(on) and 100 V rating ensure >88% efficiency at full load; UIS rating prevents failure during output short-circuit events.	Use Scenario: Constant-current buck-boost LED driver for street lighting operating from 120/230 VAC mains. IC Role / Device Role / Timing Role: Main switching transistor regulating average LED current via PWM dimming-compatible duty-cycle control. Use Value: Fast t_rr and low Q_g reduce switching losses at 100–200 kHz, enabling compact magnetics and passive cooling.
Server PSU Hold-Up Circuit	DC-DC Intermediate Bus Converter
Use Scenario: Secondary-side hold-up switch maintaining 12 V output during brief AC dropout in telecom server power supplies. IC Role / Device Role / Timing Role: Low-side switch connecting bulk capacitor to output rail only during brownout conditions. Use Value: 35 A rating and low R_DS(on) support >100 ms hold-up time at 30 A load without thermal throttling.	Use Scenario: Input-stage switch in 48 V-to-12 V intermediate bus converter for AI accelerator cards. IC Role / Device Role / Timing Role: High-efficiency primary switch in hard-switched forward or active-clamp forward topology. Use Value: R_thJC = 1.5 °C/W allows direct mounting to aluminum baseplate, eliminating need for thermal interface material in space-constrained modules.

AC/DC Flyback Converter

Industrial LED Driver

Use Scenario: Primary-side switch in isolated 12–24 W offline flyback power supply for smart home controllers.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from primary to secondary winding during each switching cycle.

Use Value: Low R_DS(on) and 100 V rating ensure >88% efficiency at full load; UIS rating prevents failure during output short-circuit events.

Use Scenario: Constant-current buck-boost LED driver for street lighting operating from 120/230 VAC mains.

IC Role / Device Role / Timing Role: Main switching transistor regulating average LED current via PWM dimming-compatible duty-cycle control.

Use Value: Fast t_rr and low Q_g reduce switching losses at 100–200 kHz, enabling compact magnetics and passive cooling.

Server PSU Hold-Up Circuit

DC-DC Intermediate Bus Converter

Use Scenario: Secondary-side hold-up switch maintaining 12 V output during brief AC dropout in telecom server power supplies.

IC Role / Device Role / Timing Role: Low-side switch connecting bulk capacitor to output rail only during brownout conditions.

Use Value: 35 A rating and low R_DS(on) support >100 ms hold-up time at 30 A load without thermal throttling.

Use Scenario: Input-stage switch in 48 V-to-12 V intermediate bus converter for AI accelerator cards.

IC Role / Device Role / Timing Role: High-efficiency primary switch in hard-switched forward or active-clamp forward topology.

Use Value: R_thJC = 1.5 °C/W allows direct mounting to aluminum baseplate, eliminating need for thermal interface material in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	R_DS(on) = 0.032 Ω @ 10 V; higher Q_g = 42 nC; TO-220 package	Larger footprint and higher conduction + switching losses; better suited for lower-frequency, heatsink-mounted designs	Select STP35NF10 only if board layout accommodates TO-220 and thermal mass exceeds 10 cm² copper.
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V; Q_g = 54 nC; same TO-220 package	Higher conduction loss and slower switching limit usable frequency to <100 kHz; lower cost but reduced efficiency	IRF540NPBF may be used for cost-sensitive, low-power (<15 W), non-isolated DC-DC where efficiency is secondary.

Compared with STP35NF10 and IRF540NPBF, the SUD35N10-26P-T4GE3 delivers superior power density and efficiency in surface-mount flyback and intermediate bus converters due to its lower R_DS(on), lower Q_g, and thermally optimized TO-252 package - enabling smaller PCBs and cooler operation without heatsinks.

Availability

SUD35N10-26P-T4GE3 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial LED drivers, and server hold-up circuits requiring stable component supply, RoHS-compliant lead-free assembly, and long-term production continuity.

Supply support for SUD35N10-26P-T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, computing, and automotive applications.

The SUD35N10-26P-T4GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-efficiency, high-frequency switching in compact, thermally constrained power conversion systems.

FAQ

What is the maximum continuous drain current rating for SUD35N10-26P-T4GE3 at 70 °C case temperature?

The SUD35N10-26P-T4GE3 is rated for 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under steady-state conduction; actual usable current depends on PCB copper area, ambient airflow, and switching frequency. The SUD35N10-26P-T4GE3 maintains safe operation up to its 175 °C maximum junction temperature when properly heatsunk.

Does SUD35N10-26P-T4GE3 support gate drive voltages below 10 V?

Yes, the SUD35N10-26P-T4GE3 is characterized down to V_GS = 7 V, with R_DS(on) = 0.0375 Ω at I_D = 8 A. Its gate threshold voltage range is 2.5–4.4 V, enabling compatibility with 5 V logic-level drivers in low-power applications. However, full performance (lowest R_DS(on), fastest switching) requires V_GS ≥ 10 V, as confirmed by the datasheet's R_DS(on) and Q_g specifications.

Is SUD35N10-26P-T4GE3 suitable for avalanche-prone circuits like flyback snubbers?

Yes, the SUD35N10-26P-T4GE3 is 100% unclamped inductive switching (UIS) tested per JEDEC JESD22-A115, with a guaranteed single-pulse avalanche energy rating of 55 mJ. This makes it suitable for flyback primary switches where leakage inductance energy must be safely absorbed during MOSFET turn-off - a key reliability advantage over non-UIS-rated alternatives. The SUD35N10-26P-T4GE3 datasheet explicitly confirms this qualification.

What is the thermal resistance from junction to ambient for SUD35N10-26P-T4GE3 on a standard PCB?

For SUD35N10-26P-T4GE3 mounted on a 1" × 1" FR4 board (1 oz Cu), the maximum junction-to-ambient thermal resistance R_thJA is 18 °C/W (typical 15 °C/W) for t ≤ 10 s. Under steady-state conditions, R_thJA rises significantly - the datasheet notes that maximum steady-state R_thJA is 50 °C/W. For reliable thermal design, engineers should use R_thJC = 1.5 °C/W and model heatsinking via the drain-connected tab.

Can SUD35N10-26P-T4GE3 be used in synchronous rectification applications?

No - the SUD35N10-26P-T4GE3 is optimized as a primary-side high-side switch, not a low-side synchronous rectifier. Its body diode has t_rr = 50–75 ns and Q_rr = 100–150 nC, which is too slow and lossy for efficient secondary-side rectification. For synchronous rectification, Vishay recommends dedicated SR controllers paired with logic-level MOSFETs like the SiR626DP. The SUD35N10-26P-T4GE3 is not designed for bidirectional conduction or fast reverse recovery in rectifier roles.

SUD35N10-26P-T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD35N10-26P-T4GE3 FAQ

1.How can I place an order for SUD35N10-26P-T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD35N10-26P-T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD35N10-26P-T4GE3 reliable?

The price and inventory of SUD35N10-26P-T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD35N10-26P-T4GE3 is usually 5 days.

3.What payment methods are accepted for SUD35N10-26P-T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD35N10-26P-T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD35N10-26P-T4GE3?

SUD35N10-26P-T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD35N10-26P-T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD35N10-26P-T4GE3?

For technical support, including SUD35N10-26P-T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD35N10-26P-T4GE3 requirements.

6.How does Aetrix verify that SUD35N10-26P-T4GE3 is sourced from the original manufacturer or authorized distributors?

All SUD35N10-26P-T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD35N10-26P-T4GE3 meets industry standards.

7.What is the process for return or replacement of SUD35N10-26P-T4GE3?

All SUD35N10-26P-T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD35N10-26P-T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD35N10-26P-T4GE3 part is unused and in its original packaging.

Return procedure for SUD35N10-26P-T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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