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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD42N03-3M9P-GE3

Name: SUD42N03-3M9P-GE3
Brand: Vishay Siliconix
SKU: SUD42N03-3M9P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD42N03-3M9P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD42N03-3M9P-GE3.pdf

Description:: MOSFET N-CH 30V 42A TO252

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Product details

Overview

SUD42N03-3M9P-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, with R_DS(on) = 3.9 mΩ at V_GS = 10 V and 4.5 mΩ at V_GS = 4.5 V, delivering 107 A continuous silicon-limited drain current (T_C = 25 °C), optimized for synchronous buck low-side switching in DC/DC converters.

For engineers reviewing the SUD42N03-3M9P-GE3 datasheet, SUD42N03-3M9P-GE3 pinout, SUD42N03-3M9P-GE3 application, or SUD42N03-3M9P-GE3 equivalent, key selection criteria include its TO-252 package thermal performance (R_thJC = 1.7 °C/W), 67 nC total gate charge, and halogen-free/RoHS-compliant construction for high-efficiency, space-constrained power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics, with gate threshold voltage (V_GS(th)) specified between 1.0 V and 2.5 V and guaranteed 100 % R_g and UIS testing per production lot. Its body diode exhibits t_rr = 41–62 ns and Q_rr = 40–60 nC under defined conditions.

The device operates across –55 °C to +150 °C junction temperature range, with absolute maximum V_DS = 30 V and V_GS = ±20 V. Thermal design must account for package-limited continuous current of 42 A and R_thJA = 50 °C/W on 1" FR-4 PCB - critical for thermally constrained board layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before avalanche onset; defines use in ≤30 V input rails.
R_DS(on) @ V_GS = 10 V	3.9 mΩ - Enables <1 W conduction loss at 50 A, supporting high-current low-side switch applications.
Q_g	67 nC (typ.) - Determines gate drive power and switching speed; impacts efficiency in 300 kHz–1 MHz DC/DC designs.
I_D (silicon-limited)	107 A @ T_C = 25 °C - Indicates die capability; actual usable current limited by package (42 A) and thermal design.
R_thJC	1.7 °C/W - Enables high-power dissipation when mounted to heatsink or copper pour; critical for thermal margin calculation.
t_rr / Q_rr	41–62 ns / 40–60 nC - Quantifies body diode reverse recovery behavior; affects shoot-through risk and EMI in synchronous rectification.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for enhanced thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V for full enhancement; gate resistance R_g = 0.3–2.8 Ω affects switching edge control.
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configuration.
D	Drain	Main power output terminal; internally connected to exposed metal tab for thermal and electrical path to PCB drain net.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency, high-efficiency switching.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; supports environmentally regulated industrial and computing end equipment.
Drain-connected tab	Provides low-impedance thermal path to PCB; enables >70 W power dissipation with adequate copper area and airflow.

Applications

Server VRMs	Industrial DC/DC Modules
Use Scenario: High-density 12 V input → 0.8–3.3 V output VRMs powering CPUs and FPGAs in rack-mounted servers. IC Role / Device Role: Low-side synchronous rectifier in multiphase buck converters. Use Value: 3.9 mΩ R_DS(on) minimizes conduction loss at >100 A per phase; TO-252 thermal performance sustains >95 % efficiency under full load.	Use Scenario: Isolated or non-isolated 24 V/48 V to 5 V/12 V conversion in PLCs, motor drives, and HMIs. IC Role / Device Role: Primary low-side switch in fixed-frequency (200–500 kHz) buck regulators. Use Value: 67 nC Q_g enables clean turn-on/turn-off with standard gate drivers; 150 °C T_J(max) supports operation in sealed enclosures.
Telecom Power Supplies	Automotive ADAS ECUs
Use Scenario: Intermediate bus converters (48 V → 12 V) in 5G base station power shelves. IC Role / Device Role: Secondary-side synchronous MOSFET in interleaved buck stages. Use Value: Fast body diode (t_rr = 41 ns) reduces dead-time losses; halogen-free construction meets telecom environmental standards.	Use Scenario: 12 V input → 3.3 V/5 V point-of-load regulation in camera modules and radar control units. IC Role / Device Role: Low-side switch in compact, thermally constrained buck regulators. Use Value: R_thJC = 1.7 °C/W allows direct thermal coupling to ECU metal housing; –55 °C to +150 °C rating covers automotive ambient extremes.

Server VRMs

Industrial DC/DC Modules

Use Scenario: High-density 12 V input → 0.8–3.3 V output VRMs powering CPUs and FPGAs in rack-mounted servers.

IC Role / Device Role: Low-side synchronous rectifier in multiphase buck converters.

Use Value: 3.9 mΩ R_DS(on) minimizes conduction loss at >100 A per phase; TO-252 thermal performance sustains >95 % efficiency under full load.

Use Scenario: Isolated or non-isolated 24 V/48 V to 5 V/12 V conversion in PLCs, motor drives, and HMIs.

IC Role / Device Role: Primary low-side switch in fixed-frequency (200–500 kHz) buck regulators.

Use Value: 67 nC Q_g enables clean turn-on/turn-off with standard gate drivers; 150 °C T_J(max) supports operation in sealed enclosures.

Telecom Power Supplies

Automotive ADAS ECUs

Use Scenario: Intermediate bus converters (48 V → 12 V) in 5G base station power shelves.

IC Role / Device Role: Secondary-side synchronous MOSFET in interleaved buck stages.

Use Value: Fast body diode (t_rr = 41 ns) reduces dead-time losses; halogen-free construction meets telecom environmental standards.

Use Scenario: 12 V input → 3.3 V/5 V point-of-load regulation in camera modules and radar control units.

IC Role / Device Role: Low-side switch in compact, thermally constrained buck regulators.

Use Value: R_thJC = 1.7 °C/W allows direct thermal coupling to ECU metal housing; –55 °C to +150 °C rating covers automotive ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 60 nC; TO-220 package; no halogen-free certification stated.	Larger footprint and higher R_thJA; less suitable for ultra-thin or high-density PCBs.	Prefer SUD42N03-3M9P-GE3 where TO-252 thermal performance and halogen-free compliance are required.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V; Q_g = 42 nC; dual N-channel SO-8; lower voltage rating (30 V same).	Lower conduction loss but reduced current handling (60 A); unsuitable for >80 A single-phase designs.	Select SUD42N03-3M9P-GE3 for higher current capability and superior thermal dissipation in single-MOSFET low-side roles.

Compared with IRL3803PbF and DMN3025LSD-13, the SUD42N03-3M9P-GE3 offers the best balance of low R_DS(on), moderate Q_g, TO-252 thermal efficiency, and certified environmental compliance - making it optimal for high-current, thermally demanding, and regulated industrial power stages.

Availability

SUD42N03-3M9P-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SUD42N03-3M9P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUD42N03-3M9P-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency synchronous rectification in DC/DC converters where low R_DS(on) and controlled switching losses are critical.

FAQ

What is the maximum continuous drain current rating for the SUD42N03-3M9P-GE3?

The SUD42N03-3M9P-GE3 has a silicon-limited continuous drain current of 107 A at T_C = 25 °C, but its package-limited rating is 42 A under the same condition. Designers must respect the lower 42 A limit unless thermal enhancements (e.g., large copper pour, heatsink) are implemented to sustain higher case temperatures - the SUD42N03-3M9P-GE3 datasheet explicitly states this package limitation.

Does the SUD42N03-3M9P-GE3 support 4.5 V gate drive in practical applications?

Yes, the SUD42N03-3M9P-GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 4.5 mΩ (typ.) and guaranteed performance down to 1 V threshold. This makes the SUD42N03-3M9P-GE3 suitable for 5 V logic-level or microcontroller-driven gate drive without level-shifting circuitry.

What is the thermal resistance from junction to case (R_thJC) for the SUD42N03-3M9P-GE3?

The SUD42N03-3M9P-GE3 has a specified R_thJC of 1.7 °C/W, measured from junction to the drain-connected tab. This value is critical for calculating junction temperature rise when the device is mounted to a heatsink or thermal pad - the SUD42N03-3M9P-GE3 leverages its TO-252 drain tab to achieve this low thermal impedance.

Is the SUD42N03-3M9P-GE3 halogen-free and RoHS-compliant?

Yes, the SUD42N03-3M9P-GE3 is explicitly certified halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as confirmed in its ordering information and datasheet revision A (06-Sep-10). The "-GE3" suffix denotes lead-free and halogen-free construction - a verified attribute of the SUD42N03-3M9P-GE3.

What is the total gate charge (Q_g) specification for the SUD42N03-3M9P-GE3?

The SUD42N03-3M9P-GE3 has a typical total gate charge (Q_g) of 67 nC at V_DS = 15 V, V_GS = 10 V, and I_D = 20 A. This parameter directly influences gate driver sizing and switching loss - the SUD42N03-3M9P-GE3's Q_g value supports efficient operation in 300–1000 kHz DC/DC converters when paired with appropriate gate drive strength.

SUD42N03-3M9P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3535 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 73.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD42N03-3M9P-GE3 FAQ

1.How can I place an order for SUD42N03-3M9P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD42N03-3M9P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD42N03-3M9P-GE3 reliable?

The price and inventory of SUD42N03-3M9P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD42N03-3M9P-GE3 is usually 5 days.

3.What payment methods are accepted for SUD42N03-3M9P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD42N03-3M9P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD42N03-3M9P-GE3?

SUD42N03-3M9P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD42N03-3M9P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD42N03-3M9P-GE3?

For technical support, including SUD42N03-3M9P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD42N03-3M9P-GE3 requirements.

6.How does Aetrix verify that SUD42N03-3M9P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD42N03-3M9P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD42N03-3M9P-GE3 meets industry standards.

7.What is the process for return or replacement of SUD42N03-3M9P-GE3?

All SUD42N03-3M9P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD42N03-3M9P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD42N03-3M9P-GE3 part is unused and in its original packaging.

Return procedure for SUD42N03-3M9P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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