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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD45P03-09-GE3

Name: SUD45P03-09-GE3
Brand: Vishay Siliconix
SKU: SUD45P03-09-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD45P03-09-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD45P03-09-GE3.pdf

Description:: MOSFET P-CH 30V 45A TO252

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Product details

Overview

SUD45P03-09-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.0087 Ω R_DS(on) at V_GS = -10 V, and -45 A continuous drain current at T_C = 25 °C in TO-252 package; used as high-current load switch in DC/DC converters and power distribution systems.

For engineers reviewing the SUD45P03-09-GE3 datasheet, SUD45P03-09-GE3 pinout, SUD45P03-09-GE3 application, or SUD45P03-09-GE3 equivalent, key selection criteria include its low R_DS(on) at -4.5 V gate drive, 100 % UIS tested ruggedness, and halogen-free RoHS-compliant construction suitable for industrial and automotive power switching.

Technical Context

This device operates as a single P-channel silicon MOSFET with trench-gate structure enabling low on-resistance and fast switching. It features 100 % R_g and unclamped inductive switching (UIS) testing per JEDEC standards, and supports gate drive voltages from ±20 V with V_GS(th) between -1 V and -2.5 V.

Thermal performance is defined by R_thJC = 3 °C/W (junction-to-case) and R_thJA = 60 °C/W (junction-to-ambient on FR-4 PCB), with avalanche energy rating of 61 mJ and safe operating area validated up to 100 A pulsed drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for high-side switching in 24 V systems
R_DS(on)	0.0087 Ω @ V_GS = -10 V - Enables <1 W conduction loss at 30 A
I_D (cont.)	-45 A @ T_C = 25 °C - Package-limited current capacity for high-power load switching
Q_g	60–90 nC - Determines gate driver strength requirement for 10–100 kHz switching
E_AS	61 mJ - Confirmed single-pulse avalanche robustness for inductive load turn-off
R_thJC	3 °C/W - Enables direct heatsinking via exposed drain tab for thermal management
V_GS(th)	-1 to -2.5 V - Ensures reliable turn-on with standard logic-level gate drivers

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain tab thermally and electrically connected to the drain terminal; 3-pin configuration with Gull-wing leads for automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Current return path for P-channel operation	Connected to system ground or higher potential node depending on high-side vs. low-side topology
Gate (G)	Control electrode for channel formation	Requires negative V_GS relative to source; compatible with standard gate drivers and level shifters
Drain (D)	Main current-carrying terminal, tied to tab	Exposed metal tab provides low-thermal-resistance path to heatsink or PCB copper pour

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for efficient high-frequency switching
100 % R_g and UIS tested	Guarantees gate resistance consistency and avalanche survivability without screening exceptions
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment
Drain-connected tab	Enables direct thermal coupling to heatsink or large PCB copper area for >40 W power dissipation

Applications

High-Current Load Switch	DC/DC Converter High-Side Switch
Use Scenario: Hot-swap control and battery protection in 12–24 V industrial power supplies. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by charge pump or level shifter. Use Value: Low 0.0087 Ω R_DS(on) minimizes voltage drop and heat generation during sustained 30–40 A loads.	Use Scenario: Synchronous buck converter upper switch in point-of-load (POL) regulators. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor. Use Value: Fast 12–20 ns rise/fall times and 60–90 nC Q_g support efficient 500 kHz operation with minimal switching loss.
Automotive Power Distribution	Reverse Polarity Protection
Use Scenario: Central power distribution module managing multiple 12 V subsystems in vehicles. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays in fuse-and-relay boxes. Use Value: 61 mJ E_AS and -100 A pulsed rating withstand load dump transients and motor stall currents.	Use Scenario: Input protection for USB-C PD adapters, PoE injectors, and field-replaceable modules. IC Role / Device Role / Timing Role: P-channel MOSFET placed between input and system to block reverse current flow. Use Value: Intrinsic body diode forward voltage of -0.8 to -1.5 V ensures low-loss conduction when oriented correctly.

High-Current Load Switch

DC/DC Converter High-Side Switch

Use Scenario: Hot-swap control and battery protection in 12–24 V industrial power supplies.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by charge pump or level shifter.

Use Value: Low 0.0087 Ω R_DS(on) minimizes voltage drop and heat generation during sustained 30–40 A loads.

Use Scenario: Synchronous buck converter upper switch in point-of-load (POL) regulators.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor.

Use Value: Fast 12–20 ns rise/fall times and 60–90 nC Q_g support efficient 500 kHz operation with minimal switching loss.

Automotive Power Distribution

Reverse Polarity Protection

Use Scenario: Central power distribution module managing multiple 12 V subsystems in vehicles.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays in fuse-and-relay boxes.

Use Value: 61 mJ E_AS and -100 A pulsed rating withstand load dump transients and motor stall currents.

Use Scenario: Input protection for USB-C PD adapters, PoE injectors, and field-replaceable modules.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between input and system to block reverse current flow.

Use Value: Intrinsic body diode forward voltage of -0.8 to -1.5 V ensures low-loss conduction when oriented correctly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω @ -10 V; TO-220 package; higher R_thJA (62 °C/W)	Larger footprint, lower current density, less suitable for space-constrained PCBs	Prefer when through-hole mounting or higher single-pulse avalanche margin (110 mJ) is required
DMT4005LPS-13	R_DS(on) = 0.0045 Ω @ -10 V; smaller PowerPAK SO-8; lower Q_g (36 nC)	Lower thermal mass and junction-to-case resistance (1.5 °C/W), but lower I_D rating (-30 A)	Prefer for compact, high-efficiency designs where peak current ≤ 30 A and layout space is limited

Compared with IRF4905PBF and DMT4005LPS-13, the SUD45P03-09-GE3 delivers optimal balance of high current capability (-45 A), low R_DS(on), and TO-252 thermal performance-making it ideal for industrial DC/DC and load-switch applications requiring both power density and ruggedness.

Availability

SUD45P03-09-GE3 is available at Aetrix Electronics and suitable for high-current load switching, DC/DC converter high-side control, and automotive power distribution requiring stable component supply across production lifecycles.

Supply support for SUD45P03-09-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SUD45P03-09-GE3 belongs to Vishay's TrenchFET® Gen II P-channel MOSFET family, engineered for high-current, low-voltage power switching in industrial, computing, and automotive systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SUD45P03-09-GE3 at 70 °C case temperature?

The SUD45P03-09-GE3 is rated for -42.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and must be verified against actual board layout and heatsinking in the final design. The SUD45P03-09-GE3 maintains its -30 V V_DS rating across this temperature range.

Does SUD45P03-09-GE3 support logic-level gate drive at -4.5 V?

Yes, the SUD45P03-09-GE3 is fully characterized at V_GS = -4.5 V, delivering R_DS(on) = 0.0150 Ω (max) at -15 A. Its V_GS(th) range of -1 V to -2.5 V ensures strong enhancement-mode turn-on with standard 4.5 V logic outputs, making the SUD45P03-09-GE3 suitable for microcontroller-driven power switches without external level shifting.

What is the thermal resistance from junction to case (R_thJC) for SUD45P03-09-GE3?

The SUD45P03-09-GE3 has a specified R_thJC of 3 °C/W, measured from junction to the drain tab. This value enables accurate thermal modeling when the exposed drain tab is soldered to a heatsink or large copper area. The SUD45P03-09-GE3's low R_thJC supports power dissipation up to 41.7 W at T_C = 25 °C.

Is SUD45P03-09-GE3 suitable for reverse polarity protection circuits?

Yes, the SUD45P03-09-GE3 is widely used in reverse polarity protection due to its low R_DS(on) and integrated body diode with V_SD = -0.8 to -1.5 V at -10 A. When placed in series with the positive rail, the SUD45P03-09-GE3 blocks reverse current while minimizing forward voltage drop during normal operation.

What does the "GE3" suffix indicate in SUD45P03-09-GE3?

Per Vishay documentation, the "GE3" suffix denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It confirms that the SUD45P03-09-GE3 uses matte tin plating and green molding compound, with no intentional addition of brominated flame retardants or chlorine-based materials.

SUD45P03-09-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 41.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD45P03-09-GE3 FAQ

1.How can I place an order for SUD45P03-09-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD45P03-09-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD45P03-09-GE3 reliable?

The price and inventory of SUD45P03-09-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD45P03-09-GE3 is usually 5 days.

3.What payment methods are accepted for SUD45P03-09-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD45P03-09-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD45P03-09-GE3?

SUD45P03-09-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD45P03-09-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD45P03-09-GE3?

For technical support, including SUD45P03-09-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD45P03-09-GE3 requirements.

6.How does Aetrix verify that SUD45P03-09-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD45P03-09-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD45P03-09-GE3 meets industry standards.

7.What is the process for return or replacement of SUD45P03-09-GE3?

All SUD45P03-09-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD45P03-09-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD45P03-09-GE3 part is unused and in its original packaging.

Return procedure for SUD45P03-09-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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