Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix SUD45P03-15-E3

Part No.:
SUD45P03-15-E3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSUD45P03-15-E3.pdf
Description:
MOSFET P-CH 30V TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,089

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SUD45P03-15 from Vishay-Siliconix is a P-channel enhancement-mode MOSFET rated for –30 V drain-source voltage, 13 A continuous drain current at 25°C, and 0.015 Ω rDS(on) at VGS = –10 V. It is designed for high-efficiency DC-DC power conversion in industrial motor drives and load-switching applications where low conduction loss and robust thermal performance are required.

For engineers reviewing the SUD45P03-15 datasheet, SUD45P03-15 pinout, SUD45P03-15 application, or SUD45P03-15 equivalent, key selection criteria include its TO-252 package thermal resistance (RthJC = 1.8 °C/W), –1.0 V gate threshold voltage, source-drain diode recovery time (trr = 55–100 ns), and pulsed drain current capability of 100 A.

Technical Context

This MOSFET operates as a single N-channel depletion-type device - no, correction: it is a P-channel enhancement-mode device with negative VGS(th) and normally-off behavior. Its gate drive requires negative bias relative to source, and it supports synchronous rectification in buck converters when paired with an N-channel high-side switch.

The device features a drain-connected tab for low-inductance thermal path and integrates a body diode with VSD = 1.0–1.5 V at –45 A and trr = 55–100 ns under specified di/dt conditions. Its safe operating area (SOA) is limited by rDS(on) at DC and by thermal impedance during pulse operation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS–30 V maximum; defines maximum blocking voltage in high-side switch or reverse-polarity protection circuits
rDS(on)0.015 Ω @ VGS = –10 V, ID = –13 A; enables <195 mW conduction loss at full rated current
ID (cont)13 A @ TA = 25°C; derates to 8 A at 100°C ambient, requiring heatsinking above ~60°C
Qg50–125 nC; determines gate driver power requirement and switching speed trade-off in PWM circuits
trr55–100 ns; impacts reverse-recovery losses and EMI in hard-switched topologies
RthJC1.8 °C/W; allows direct thermal coupling to heatsink via exposed drain tab in TO-252 package
VGS(th)–1.0 V typical; ensures reliable turn-on with standard –5 V or –10 V gate drivers

Pinout & Package

Package: TO-252 (DPAK), surface-mount, drain-connected tab for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
Source (S)Reference node for gate drive and current return pathConnected to system ground or high-side rail return; sets VGS reference
Gate (G)Control electrode for channel formationRequires negative voltage relative to source to turn on; high input capacitance (Ciss = 3200 pF) demands robust gate driver
Drain (D)Main current-carrying terminal, electrically tied to exposed tabTab must be soldered to copper pour for thermal management; electrically connects to load or supply rail

Key Features

FeatureDesign Value
Low rDS(on) at –10 V0.015 Ω enables <200 mW conduction loss at 13 A, reducing thermal stress in compact power stages
Drain-connected thermal tabTO-252 package with solderable drain tab achieves RthJC = 1.8 °C/W for direct heatsink mounting
Fast body diode recoverytrr = 55–100 ns supports efficient synchronous rectification without excessive shoot-through risk
High pulsed current ratingIDM = 100 A allows short-duration overload tolerance in motor stall or inrush conditions
Wide temperature range–55°C to +150°C junction operation supports automotive under-hood and industrial control environments

Applications

Reverse Polarity ProtectionDC-DC Synchronous Rectifier

Use Scenario: Installed in series with power input to prevent damage from accidental battery reversal in 24 V industrial controllers.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement with near-zero forward drop.

Use Value: Eliminates 0.7 V diode loss, improving efficiency by >3% at 10 A and enabling cooler operation vs. Schottky solutions.

Use Scenario: Used as low-side switch in non-isolated buck converter for FPGA core voltage (1.2 V @ 20 A).

IC Role / Device Role / Timing Role: Synchronous rectifier replacing freewheeling diode to reduce conduction loss during off-time.

Use Value: Achieves 0.015 Ω rDS(on) at –10 V gate drive, cutting rectifier loss by >80% versus 40 V Schottky diode.

Motor Drive Half-BridgeHot-Swap Controller

Use Scenario: Low-side switch in H-bridge for 24 V brushed DC motor (15 A peak) in automated valve actuator.

IC Role / Device Role / Timing Role: Power switch controlling motor direction and braking via PWM and body-diode freewheeling.

Use Value: Body diode VSD = 1.0–1.5 V and trr = 55–100 ns minimize braking energy loss and EMI during commutation.

Use Scenario: Inrush limiter in 48 V telecom shelf power entry module with hot-plug capability.

IC Role / Device Role / Timing Role: Soft-start controlled high-side switch limiting surge current during board insertion.

Use Value: Gate threshold of –1.0 V allows precise turn-on control using simple RC+op-amp circuitry; 13 A rating supports 30 A peak loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF4905PBFrDS(on) = 0.02 Ω @ –10 V; higher RthJA = 62 °C/W (TO-220); Qg = 120 nCLess efficient at high frequency due to higher gate charge; better suited for lower-frequency linear regulationPrefer SUD45P03-15 for surface-mount, thermally constrained, or high-frequency sync rectifier use
SI4435DYrDS(on) = 0.018 Ω @ –10 V; SO-8 package; RthJA = 60 °C/W; lower ID = 10 ALimited current handling and thermal dissipation; suitable only for sub-8 A loadsChoose SUD45P03-15 for >10 A continuous operation and superior thermal performance in TO-252

Compared with IRF4905PBF and SI4435DY, the SUD45P03-15 delivers lower conduction loss, superior thermal resistance via its drain-tab package, and optimized gate charge for high-efficiency switching - making it preferred for space-constrained, high-current DC-DC and motor control designs.

Availability

SUD45P03-15 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power entry modules, and automotive body electronics requiring stable component supply and long-term lifecycle support.

Supply support for SUD45P03-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay-Siliconix is a global semiconductor manufacturer specializing in discrete power devices, optoelectronics, and passive components, with deep expertise in MOSFET reliability and thermal design.

The SUD45P03-15 belongs to Vishay's TrenchFET® P-channel portfolio, engineered for high-efficiency power switching in space- and thermally-constrained applications such as DC-DC converters and load switches.

FAQ

What is the maximum continuous drain current for SUD45P03-15 at 100°C ambient temperature?

The SUD45P03-15 supports 8 A continuous drain current at TA = 100°C when surface-mounted on FR4 board per datasheet conditions. This derating reflects thermal limits imposed by RthJA = 30 °C/W. For sustained 13 A operation, active cooling or PCB copper thermal spreading is required. The SUD45P03-15 datasheet specifies this value in Absolute Maximum Ratings Table on page 1-51.

Does SUD45P03-15 have a built-in body diode, and what are its key parameters?

Yes, the SUD45P03-15 integrates a source-drain body diode with forward voltage VSD = 1.0–1.5 V at –45 A and reverse recovery time trr = 55–100 ns at di/dt = 100 A/μs. These values are measured with VGS = 0 V and define its suitability for freewheeling and synchronous rectification. The SUD45P03-15 body diode characteristics are documented in the "Source-Drain Diode Ratings" section on page 1-52.

What gate voltage is required to fully enhance SUD45P03-15?

The SUD45P03-15 achieves its specified rDS(on) = 0.015 Ω at VGS = –10 V, with a typical gate threshold voltage VGS(th) of –1.0 V. For reliable enhancement across temperature and process variation, –10 V is recommended; –4.5 V yields rDS(on) = 0.024 Ω. The SUD45P03-15 gate drive requirements are detailed in the "Specifications" table on page 1-52.

Is SUD45P03-15 suitable for use in automotive applications?

The SUD45P03-15 operates from –55°C to +150°C junction temperature and meets AEC-Q101 stress test requirements per Vishay qualification reports. Its TO-252 package and robust SOA support under-hood motor control and body electronics. However, automotive qualification must be confirmed per specific program requirements; the SUD45P03-15 is not pre-qualified unless explicitly marked AEC-Q101.

How does the thermal performance of SUD45P03-15 compare between junction-to-case and junction-to-ambient?

The SUD45P03-15 has RthJC = 1.8 °C/W (junction-to-case) and RthJA = 30 °C/W (junction-to-ambient, FR4 board). This 16.7× difference highlights the critical need for thermal interface to the PCB copper or external heatsink. Mounting the drain tab directly to a large copper pour reduces effective RthJA significantly. These values are specified in the Thermal Resistance Ratings table on page 1-51 of the SUD45P03-15 datasheet.

SUD45P03-15-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
125 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
4W (Ta), 70W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

SUD45P03-15-E3 FAQ

1.How can I place an order for SUD45P03-15-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD45P03-15-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD45P03-15-E3 reliable?

The price and inventory of SUD45P03-15-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD45P03-15-E3 is usually 5 days.

3.What payment methods are accepted for SUD45P03-15-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD45P03-15-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD45P03-15-E3?

SUD45P03-15-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD45P03-15-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD45P03-15-E3?

For technical support, including SUD45P03-15-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD45P03-15-E3 requirements.

6.How does Aetrix verify that SUD45P03-15-E3 is sourced from the original manufacturer or authorized distributors?

All SUD45P03-15-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD45P03-15-E3 meets industry standards.

7.What is the process for return or replacement of SUD45P03-15-E3?

All SUD45P03-15-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD45P03-15-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD45P03-15-E3 part is unused and in its original packaging.

Return procedure for SUD45P03-15-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUD45P03-15-E3 Tags

  • SUD45P03-15-E3
  • SUD45P03-15-E3 PDF
  • SUD45P03-15-E3 Datasheet
  • SUD45P03-15-E3 Specifications
  • SUD45P03-15-E3 Images
  • Vishay Siliconix
  • Vishay Siliconix SUD45P03-15-E3
  • Buy SUD45P03-15-E3
  • SUD45P03-15-E3 Price
  • SUD45P03-15-E3 Distributor
  • SUD45P03-15-E3 Supplier
  • SUD45P03-15-E3 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER