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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD45P04-16P-GE3

Name: SUD45P04-16P-GE3
Brand: Vishay Siliconix
SKU: SUD45P04-16P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD45P04-16P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD45P04-16P-GE3.pdf

Description:: MOSFET P-CH 40V 36A TO252AA

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Product details

Overview

SUD45P04-16P-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -40 V drain-source voltage, 0.0162 Ω R_DS(on) at -10 V gate drive, and -36 A continuous drain current at T_C = 25 °C, used as a high-current load switch in DC/DC converters and power distribution systems.

For engineers reviewing the SUD45P04-16P-GE3 datasheet, SUD45P04-16P-GE3 pinout, SUD45P04-16P-GE3 application, or SUD45P04-16P-GE3 equivalent, key selection criteria include its -40 V V_DS, low 0.0162 Ω on-resistance at -10 V, TO-252 package thermal performance (R_thJC = 3 °C/W), avalanche energy rating (E_AS = 51 mJ), and halogen-free/RoHS-compliant construction.

Technical Context

This device operates as a single P-channel silicon MOSFET with trench-gate architecture optimized for low conduction loss and fast switching. Its gate threshold voltage range (-1 V to -2.5 V) ensures reliable turn-on with standard logic-level negative gate drive, while the 67 nC total gate charge supports efficient operation in high-frequency synchronous buck topologies.

The integrated body diode exhibits 38–57 ns reverse recovery time and 40–60 nC Q_rr, enabling use in freewheeling paths without external Schottky supplementation in moderate-speed converters. Thermal design is anchored by a 3 °C/W junction-to-case resistance and 60 °C/W junction-to-ambient rating on 1" FR-4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for high-side or reverse-polarity protection circuits
R_DS(on) max	0.0162 Ω at V_GS = -10 V - Enables ≤0.5 W conduction loss at 36 A, critical for thermally constrained PCBs
I_D cont	-36 A at T_C = 25 °C - Supports high-current load switching without forced air cooling
Q_g typ	67 nC - Determines gate driver power requirement and switching transition time in PWM stages
E_AS	51 mJ - Specifies single-pulse avalanche robustness during inductive load turn-off transients
R_thJC	3 °C/W - Allows direct heatsinking via drain-connected tab for >30 W power dissipation
V_GS(th)	-1 to -2.5 V - Ensures full enhancement with -4.5 V logic-compatible gate drive

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Current return path for P-channel conduction	Connected to system ground or higher potential node depending on high-side vs. low-side configuration
Gate (G)	Control electrode for channel formation	Requires negative voltage relative to source to turn on; 0.5–2.5 Ω gate resistance limits ringing
Drain (D)	Main current output terminal	Internally bonded to exposed copper tab; must be electrically and thermally connected to PCB copper pour

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact high-current switching
100 % R_g and UIS tested	Ensures gate resistance consistency and guaranteed unclamped inductive switching ruggedness per unit
Halogen-free & RoHS-compliant	Meets JEDEC JS709A and EU Directive 2011/65/EU for environmentally regulated end equipment
Drain-connected tab	Provides low-impedance thermal path to PCB and enables direct heatsink mounting without isolation hardware

Applications

Power Distribution Switching	DC/DC Converter High-Side Switch
Use Scenario: Hot-swap control and overcurrent protection in 12 V/24 V industrial power rails. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by dedicated level-shifting controller. Use Value: Low 0.0162 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 30 A loads, extending system uptime.	Use Scenario: Upper switch in non-synchronous buck converter for point-of-load regulation in telecom base stations. IC Role / Device Role / Timing Role: Main power switch conducting during high-side ON phase; body diode provides freewheeling path during OFF phase. Use Value: 51 mJ E_AS withstands inductive kickback from 10 µH chokes at 20 A, eliminating need for external snubbers.
Reverse Polarity Protection	Motor Drive H-Bridge Leg
Use Scenario: Input protection for battery-powered medical instruments against accidental reverse battery insertion. IC Role / Device Role / Timing Role: P-channel MOSFET placed between input connector and main regulator, oriented to block reverse current flow. Use Value: -40 V V_DS rating accommodates 24 V nominal systems with 100 V surge transients per ISO 7637-2.	Use Scenario: Low-side switch in brushed DC motor driver for HVAC actuators requiring bidirectional control. IC Role / Device Role / Timing Role: One quadrant of H-bridge handling continuous 25 A stall current with pulse-width modulated speed control. Use Value: 3 °C/W R_thJC allows direct tab-to-heatsink mounting, sustaining 25 A at 100 % duty cycle without thermal shutdown.

Power Distribution Switching

DC/DC Converter High-Side Switch

Use Scenario: Hot-swap control and overcurrent protection in 12 V/24 V industrial power rails.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by dedicated level-shifting controller.

Use Value: Low 0.0162 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 30 A loads, extending system uptime.

Use Scenario: Upper switch in non-synchronous buck converter for point-of-load regulation in telecom base stations.

IC Role / Device Role / Timing Role: Main power switch conducting during high-side ON phase; body diode provides freewheeling path during OFF phase.

Use Value: 51 mJ E_AS withstands inductive kickback from 10 µH chokes at 20 A, eliminating need for external snubbers.

Reverse Polarity Protection

Motor Drive H-Bridge Leg

Use Scenario: Input protection for battery-powered medical instruments against accidental reverse battery insertion.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between input connector and main regulator, oriented to block reverse current flow.

Use Value: -40 V V_DS rating accommodates 24 V nominal systems with 100 V surge transients per ISO 7637-2.

Use Scenario: Low-side switch in brushed DC motor driver for HVAC actuators requiring bidirectional control.

IC Role / Device Role / Timing Role: One quadrant of H-bridge handling continuous 25 A stall current with pulse-width modulated speed control.

Use Value: 3 °C/W R_thJC allows direct tab-to-heatsink mounting, sustaining 25 A at 100 % duty cycle without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.02 Ω @ -10 V; TO-220 package; R_thJC = 2.5 °C/W but requires through-hole mounting	Better thermal resistance but larger footprint and no surface-mount compatibility	Select when board space permits through-hole assembly and higher peak power dissipation is needed
DMT4005LPS-13	R_DS(on) = 0.0045 Ω @ -10 V; smaller PowerPAK SO-8 package; lower Q_g (32 nC) but lower I_D (20 A)	Superior conduction efficiency in space-constrained designs but limited to ≤20 A continuous	Select when PCB area is critical and load current stays below 20 A with aggressive thermal management

Compared with IRF4905PbF and DMT4005LPS-13, the SUD45P04-16P-GE3 delivers optimal balance of low R_DS(on), surface-mount TO-252 scalability, and 36 A current capability-making it preferred for industrial DC/DC and power distribution where both density and robustness are required.

Availability

SUD45P04-16P-GE3 is available at Aetrix Electronics and suitable for power distribution switching, DC/DC converter high-side switching, and reverse polarity protection requiring stable component supply across automotive, industrial, and medical OEM programs.

Supply support for SUD45P04-16P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUD45P04-16P-GE3 belongs to Vishay's TrenchFET® P-channel portfolio, engineered for high-current, low-voltage power switching in space- and thermally-constrained applications such as server VRMs and industrial motor controls.

FAQ

What is the maximum continuous drain current rating for the SUD45P04-16P-GE3 at 70 °C case temperature?

The SUD45P04-16P-GE3 supports -29 A continuous drain current at T_C = 70 °C, derated from its -36 A rating at 25 °C. This linear derating reflects thermal limitations of the TO-252 package and must be validated against actual PCB copper area and airflow conditions. The SUD45P04-16P-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does the SUD45P04-16P-GE3 have an integrated body diode, and what are its key parameters?

Yes, the SUD45P04-16P-GE3 includes a monolithic body diode with -36 A continuous forward current rating, -0.8 V to -1.5 V forward voltage at -10 A, 38–57 ns reverse recovery time, and 40–60 nC reverse recovery charge. These values are measured under specified test conditions in the datasheet's "Drain-Source Body Diode Ratings" section and directly impact freewheeling efficiency in buck and H-bridge topologies.

What is the gate threshold voltage range for the SUD45P04-16P-GE3, and how does it affect drive requirements?

The SUD45P04-16P-GE3 has a gate threshold voltage range of -1 V to -2.5 V at I_D = -250 µA. This ensures reliable turn-on with -4.5 V logic-level gate drive while maintaining noise immunity. The SUD45P04-16P-GE3 must be driven negative relative to source; using 0 V gate voltage leaves it fully off, making it suitable for high-side configurations with simple level-shifted control.

Is the SUD45P04-16P-GE3 suitable for avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the SUD45P04-16P-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for 51 mJ single-pulse avalanche energy with L = 0.1 mH. This specification enables safe operation during inductive load switching transients without external clamping, provided pulse width remains ≤300 µs and duty cycle ≤2 %. The SUD45P04-16P-GE3 datasheet confirms this in the Absolute Maximum Ratings table.

What thermal resistance values are specified for the SUD45P04-16P-GE3, and how do they influence heatsinking decisions?

The SUD45P04-16P-GE3 specifies R_thJC = 3 °C/W (junction-to-case) and R_thJA = 60 °C/W (junction-to-ambient on 1" FR-4 PCB). The low R_thJC confirms efficient heat transfer from die to drain tab, supporting direct heatsink attachment. The higher R_thJA indicates ambient cooling alone is insufficient above ~2.1 W; thus, the SUD45P04-16P-GE3 requires either PCB copper thermal vias or external heatsinking for >30 W dissipation.

SUD45P04-16P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16.2mOhm @ 14A, 20V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2765 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 41.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD45P04-16P-GE3 FAQ

1.How can I place an order for SUD45P04-16P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD45P04-16P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD45P04-16P-GE3 reliable?

The price and inventory of SUD45P04-16P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD45P04-16P-GE3 is usually 5 days.

3.What payment methods are accepted for SUD45P04-16P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD45P04-16P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD45P04-16P-GE3?

SUD45P04-16P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD45P04-16P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD45P04-16P-GE3?

For technical support, including SUD45P04-16P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD45P04-16P-GE3 requirements.

6.How does Aetrix verify that SUD45P04-16P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD45P04-16P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD45P04-16P-GE3 meets industry standards.

7.What is the process for return or replacement of SUD45P04-16P-GE3?

All SUD45P04-16P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD45P04-16P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD45P04-16P-GE3 part is unused and in its original packaging.

Return procedure for SUD45P04-16P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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