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Vishay Siliconix SUD50N024-09P-E3
- Part No.:
- SUD50N024-09P-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD50N024-09P-E3.pdf
- Description:
- MOSFET N-CH 22V 49A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:4,099
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Product details
Overview
SUD50N024-09P-E3 from Vishay Siliconix is an N-channel TrenchFET power MOSFET rated for 22 V drain-source voltage, 49 A continuous drain current at TC = 25 °C, and 0.0095 Ω rDS(on) at VGS = 10 V - optimized for high-efficiency PWM in high-side synchronous buck DC/DC converters used in desktop and server power supplies.
For engineers reviewing the SUD50N024-09P-E3 datasheet, SUD50N024-09P-E3 pinout, SUD50N024-09P-E3 application, or SUD50N024-09P-E3 equivalent, key selection criteria include its 22 V VDS rating, 0.0095 Ω on-resistance at 10 V gate drive, 175 °C maximum junction temperature, TO-252 package thermal performance, and diode recovery characteristics for synchronous rectification.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low conduction loss and fast switching with 10.5 nC total gate charge and 275 pF reverse transfer capacitance (Crss), enabling efficient operation in high-frequency synchronous buck topologies. Its gate threshold voltage range (0.8–3.0 V) supports robust 4.5 V logic-level drive compatibility while maintaining noise immunity.
The device features a source-drain diode with 1.2–1.5 V forward voltage at 50 A and 35–70 ns reverse recovery time, critical for minimizing shoot-through and body-diode conduction losses in high-side configurations. Drain-connected tab enhances thermal path to PCB copper in TO-252 surface-mount mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 22 V - Maximum blocking voltage in high-side switch position of buck converter |
| rDS(on) | 0.0095 Ω @ VGS = 10 V - Enables <1 W conduction loss at 32 A DC load current |
| ID (cont) | 49 A @ TC = 25 °C - Supports high-current output stages with proper heatsinking |
| TJ max | 175 °C - Allows operation in thermally constrained server/desktop VRM environments |
| Qg | 10.5–16 nC - Determines gate driver power requirement and switching speed trade-off |
| VGS(th) | 0.8–3.0 V - Ensures reliable turn-on with 4.5 V or 5 V logic-level controllers |
| Coss | 470 pF @ VDS = 10 V - Impacts hard-switching loss and resonant behavior during dead-time |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, drain-connected tab for enhanced thermal conduction to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path from input rail | Internally connected to metal tab; must be routed to large copper area for thermal management |
| G (Gate) | Control terminal for channel modulation | High-impedance input requiring low-inductance gate loop to minimize ringing and EMI |
| S (Source) | Reference node for gate drive and current return | Common connection point for gate driver ground, sense resistor, and synchronous controller reference |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET architecture | Enables ultra-low rDS(on) and reduced gate charge versus planar MOSFETs for same die size |
| PWM-optimized switching | Low Crss/Ciss ratio minimizes Miller-induced turn-on risk in high dv/dt synchronous buck nodes |
| 175 °C junction rating | Supports sustained operation under transient load conditions without derating in compact VRMs |
| Lead-free (E3 suffix) | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
Applications
| Desktop CPU VRM | Server Memory Regulator |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD desktop CPUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–1000 kHz with precise dead-time control. Use Value: 0.0095 Ω rDS(on) reduces conduction loss by >30% vs. legacy 12 mΩ devices, improving full-load efficiency by ~1.2%. | Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in dual-socket servers. IC Role / Device Role / Timing Role: High-side power switch in interleaved 2-phase buck stage with tight thermal constraints. Use Value: 175 °C TJ rating allows sustained 45 A operation without thermal throttling in dense DIMM slots. |
| GPU Power Delivery | ASIC Core Supply |
Use Scenario: High-transient current supply for discrete graphics processing units with dynamic voltage scaling. IC Role / Device Role / Timing Role: Primary high-side switch in 6+2 phase VRM, driven by digital multiphase controller. Use Value: Low Qgd (4.0 nC) enables fast turn-off, reducing cross-conduction loss during rapid load steps up to 200 A/μs. | Use Scenario: Core voltage regulator for AI accelerator ASICs requiring sub-1 V, >100 A delivery with minimal voltage droop. IC Role / Device Role / Timing Role: High-side switch in compact, high-density 8-phase buck design with integrated inductor modules. Use Value: TO-252 package with drain-connected tab achieves 3.1 °C/W RthJC, enabling direct thermal coupling to heatsink baseplate. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242TRPBF | 20 V VDS, 0.0065 Ω rDS(on) @ 4.5 V, 5 mm × 6 mm PQFN package | Lower voltage rating; better suited for 12 V input systems with space-constrained layouts | Select when board space is limited and input voltage ≤16 V; requires different footprint and layout |
| SI7157DP-T1-GE3 | 30 V VDS, 0.011 Ω rDS(on) @ 10 V, SO-8 package with exposed drain pad | Higher voltage margin; lower thermal resistance (RthJC = 2.5 °C/W) but larger footprint | Select when system requires ≥24 V input tolerance or superior thermal performance in SO-8-compatible designs |
Compared with IRLHS6242TRPBF and SI7157DP-T1-GE3, the SUD50N024-09P-E3 offers optimal balance of 22 V rating, ultra-low 10 V on-resistance, and TO-252 manufacturability for cost-sensitive, high-volume desktop/server VRMs - neither alternative matches its combination of voltage headroom, conduction loss, and thermal interface simplicity.
Availability
SUD50N024-09P-E3 is available at Aetrix Electronics and suitable for desktop CPU VRMs, server memory regulators, and GPU power delivery systems requiring stable component supply, RoHS-compliant lead-free assembly, and consistent parametric performance across production lots.
Supply support for SUD50N024-09P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SUD50N024-09P-E3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low rDS(on), fast switching, and thermal reliability are critical.
FAQ
What is the maximum continuous drain current rating for SUD50N024-09P-E3 at 100 °C case temperature?
The SUD50N024-09P-E3 has a continuous drain current rating of 34 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and silicon die, not package current-carrying capacity alone. The SUD50N024-09P-E3 must be mounted on adequate PCB copper to sustain this current without exceeding 175 °C junction temperature.
Does SUD50N024-09P-E3 support 4.5 V gate drive in high-side synchronous buck applications?
Yes, the SUD50N024-09P-E3 is fully characterized for 4.5 V gate drive, with rDS(on) = 0.017 Ω at ID = 20 A and VGS = 4.5 V. Its gate threshold voltage range (0.8–3.0 V) ensures strong enhancement-mode turn-on under typical 4.5 V logic-level controller outputs, making the SUD50N024-09P-E3 suitable for modern multiphase VRMs using 5 V or 3.3 V gate drivers.
What is the thermal resistance from junction to case (RthJC) for SUD50N024-09P-E3?
The SUD50N024-09P-E3 has a maximum junction-to-case thermal resistance of 3.8 °C/W, with a typical value of 3.1 °C/W. This low RthJC is achieved via the drain-connected metal tab in the TO-252 package, enabling efficient heat transfer to the PCB copper pour or external heatsink - a key parameter for thermal design of the SUD50N024-09P-E3 in high-power density VRMs.
Is SUD50N024-09P-E3 suitable for use as a synchronous rectifier in a high-side configuration?
Yes, the SUD50N024-09P-E3 is explicitly designed for high-side synchronous buck DC/DC conversion, as confirmed in its Applications section. Its low rDS(on), fast switching parameters (Qgd = 4.0 nC, trr = 35–70 ns), and source-drain diode characteristics make the SUD50N024-09P-E3 appropriate for replacing Schottky diodes in high-efficiency topologies where body-diode conduction must be minimized.
What does the "-E3" suffix indicate in SUD50N024-09P-E3?
The "-E3" suffix denotes that the SUD50N024-09P-E3 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU. It specifies a matte tin (Sn) plating over copper leads, qualified for standard Pb-free reflow soldering profiles per JEDEC J-STD-020, distinguishing it from leaded versions like SUD50N024-09P.
SUD50N024-09P-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 22 V
- Current - Continuous Drain (Id) @ 25°C:
- 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.5W (Ta), 39.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SUD50N024-09P-E3 FAQ
1.How can I place an order for SUD50N024-09P-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD50N024-09P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD50N024-09P-E3 reliable?
The price and inventory of SUD50N024-09P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N024-09P-E3 is usually 5 days.
3.What payment methods are accepted for SUD50N024-09P-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N024-09P-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD50N024-09P-E3?
SUD50N024-09P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD50N024-09P-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD50N024-09P-E3?
For technical support, including SUD50N024-09P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N024-09P-E3 requirements.
6.How does Aetrix verify that SUD50N024-09P-E3 is sourced from the original manufacturer or authorized distributors?
All SUD50N024-09P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N024-09P-E3 meets industry standards.
7.What is the process for return or replacement of SUD50N024-09P-E3?
All SUD50N024-09P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N024-09P-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD50N024-09P-E3 part is unused and in its original packaging.
Return procedure for SUD50N024-09P-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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