Vishay Siliconix SUD50N025-06P-E3

Overview

SUD50N025-06P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 25 V drain-source voltage, 78 A continuous drain current at TC = 25 °C, and 6.2 mΩ typical RDS(on) at VGS = 10 V. It operates as a low-side switch in DC/DC converters for desktop PCs, delivering high current density in a surface-mount TO-252 package with drain-connected tab for thermal efficiency.

For engineers reviewing the SUD50N025-06P-E3 datasheet, SUD50N025-06P-E3 pinout, SUD50N025-06P-E3 application, or SUD50N025-06P-E3 equivalent, key selection criteria include its 20.5 nC total gate charge at 4.5 V drive, 0.9–1.5 V body diode forward voltage at 30 A, and 61.25 mJ single-pulse avalanche energy - critical for synchronous buck converter reliability and layout-constrained power stages.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio. Its gate threshold voltage (1.4–2.4 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 100 % Rg tested specification ensures consistent turn-on timing across production lots.

The device features a thermally enhanced TO-252AA package with drain-connected tab, yielding 1.9 °C/W typical junction-to-case thermal resistance. Its body diode exhibits 30–45 ns reverse recovery time and 20–30 nC Qrr under 20 A/100 A/µs conditions - parameters directly influencing synchronous rectifier losses and EMI in high-frequency buck regulators.

Key Specifications

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain tab thermally and electrically connected to the drain terminal. Dimensions per Vishay document 71197: D = 5.97–6.22 mm, E = 6.35–6.73 mm, H = 9.40–10.41 mm, tab area ≈ 4.1 × 6.3 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLML0030TRPBF and DMN2004LK-7, the SUD50N025-06P-E3 delivers 2.4× lower RDS(on) and 12× higher current handling in a thermally robust TO-252 package - making it the sole viable option for high-density, high-efficiency 25 V synchronous buck stages above 20 A.

Availability

SUD50N025-06P-E3 is available at Aetrix Electronics and suitable for desktop PC VRMs, industrial DC/DC converters, and server point-of-load regulators requiring stable component supply and RoHS-compliant manufacturing.

Supply support for SUD50N025-06P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally optimized packaging.

The SUD50N025-06P-E3 belongs to Vishay's TrenchFET® Gen II low-voltage power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in computing and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for the SUD50N025-06P-E3 at case temperature of 70 °C?

The SUD50N025-06P-E3 has a maximum continuous drain current of 65 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and assumes proper PCB copper area and airflow. The SUD50N025-06P-E3 must be mounted on ≥1" × 1" FR4 with 2 oz copper to achieve this rating.

Does the SUD50N025-06P-E3 support 3.3 V logic-level gate drive?

Yes, the SUD50N025-06P-E3 supports 3.3 V logic-level gate drive: its gate threshold voltage is 1.4–2.4 V, and it achieves 10 mΩ RDS(on) at VGS = 4.5 V and ID = 15 A. While fully enhanced at 10 V, the SUD50N025-06P-E3 delivers usable on-resistance down to 4.5 V, enabling direct interface with 3.3 V microcontrollers in low-power applications - though conduction loss increases by ~60 % versus 10 V drive.

What is the thermal resistance from junction to ambient for the SUD50N025-06P-E3 under standard mounting conditions?

The SUD50N025-06P-E3 has a maximum junction-to-ambient thermal resistance of 14 °C/W for t ≤ 10 sec under standard surface-mount conditions on 1" × 1" FR4 board (per note b). For steady-state operation, RthJA is not specified; instead, design must rely on RthJC = 2.3 °C/W (max) and actual PCB thermal design. The SUD50N025-06P-E3 requires adequate copper pour under the drain tab to approach published thermal performance.

Can the SUD50N025-06P-E3 be used as a synchronous rectifier in a buck converter?

Yes, the SUD50N025-06P-E3 is suitable as a synchronous rectifier due to its low 0.9–1.5 V body diode forward voltage at 30 A and fast 30–45 ns reverse recovery time. Its 20–30 nC Qrr minimizes switching loss during dead-time commutation. When used as a synchronous rectifier, the SUD50N025-06P-E3 must be driven with precise timing to avoid shoot-through, and its gate must be referenced to the source node - a requirement met by most dedicated synchronous buck controllers.

Is the SUD50N025-06P-E3 pin-compatible with other TO-252 N-channel MOSFETs?

The SUD50N025-06P-E3 uses standard TO-252AA (DPAK) pinout: Gate (left), Source (center), Drain (right with tab). It shares mechanical footprint and terminal arrangement with industry-standard TO-252 devices such as the Si2300DS and FDS6670A. However, electrical characteristics - including RDS(on), Qg, and avalanche rating - differ significantly; therefore, the SUD50N025-06P-E3 is not a drop-in replacement without circuit validation.