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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N03-06AP-E3

Name: SUD50N03-06AP-E3
Brand: Vishay Siliconix
SKU: SUD50N03-06AP-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N03-06AP-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N03-06AP-E3.pdf

Description:: MOSFET N-CH 30V 90A TO252

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Product details

Overview

SUD50N03-06AP-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET optimized for low-side synchronous rectifier operation in DC/DC converters, with r_DS(on) = 0.0057 Ω at V_GS = 10 V, 90 A continuous drain current (T_C = 25 °C), and TO-252 package with drain-connected tab for enhanced thermal performance.

For engineers reviewing the SUD50N03-06AP-E3 datasheet, SUD50N03-06AP-E3 pinout, SUD50N03-06AP-E3 application, or SUD50N03-06AP-E3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100% R_g tested gate resistance, body diode reverse recovery charge (Q_rr = 38–60 nC), and thermal resistance R_thJC = 1.5 °C/W for high-efficiency power stage design.

Technical Context

This MOSFET employs trench-gate technology to achieve low on-resistance and fast switching dynamics. Its optimized gate charge profile (Q_g = 62–95 nC at V_GS = 10 V) supports high-frequency synchronous rectification, while the integrated source-drain diode features t_rr = 65–100 ns and Q_rr = 38–60 nC for reduced switching loss in hard-commutated topologies.

The device operates across -55 °C to +175 °C junction temperature range, with V_GS(th) = 1.2–2.4 V ensuring robust turn-on margin under low-voltage control, and ±20 V gate-source voltage rating enabling compatibility with standard logic-level and PWM controller gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage suitable for 24 V input DC/DC stages and automotive 12 V systems.
r_DS(on) @ 10 V	0.0057 Ω - Enables <1.1 W conduction loss at 50 A, critical for high-current low-side switch efficiency.
r_DS(on) @ 4.5 V	0.0078 Ω - Supports direct drive from 3.3 V/5 V controllers without level-shifting, reducing BOM count.
Q_g @ 10 V	62–95 nC - Determines gate driver power requirement and switching speed trade-off in 300–1000 kHz converters.
R_thJC	1.5 °C/W - Allows >50 W power dissipation with modest heatsinking, enabling compact PCB layout in space-constrained modules.
Q_rr	38–60 nC - Quantifies stored charge in body diode; lower values reduce voltage overshoot and EMI during freewheeling transitions.
I_D (cont, T_C=25°C)	90 A - Confirmed package-limited current capacity, not silicon-limited; enables derating for long-term reliability at elevated case temps.

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain-connected copper tab for direct thermal coupling to PCB copper pour or heatsink. Standard 3-pin configuration: Gate (G), Source (S), Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level signals; 100% R_g tested for consistent switching timing.
S	Source	Reference node for gate drive and current return path; tied to power ground plane in low-side configuration.
D	Drain	Main current output terminal; electrically and thermally connected to large copper tab for low-inductance, high-current routing.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading r_DS(on) × Q_g figure-of-merit for minimal conduction + switching loss trade-off.
Optimized for low-side synchronous rectification	Body diode Q_rr and t_rr tuned to minimize reverse recovery loss when used as active rectifier in buck/flyback outputs.
100% R_g tested	Ensures gate resistance consistency across production lots, critical for predictable gate driver sizing and EMI control.
Drain-connected tab	Provides <1.5 °C/W thermal path from junction to case, enabling >80 W steady-state dissipation with 2 oz copper and 1"² thermal pad.
RoHS-compliant, Pb-free	Meets JEDEC J-STD-020 reflow profile requirements and industrial environmental compliance mandates.

Applications

Server VRM Output Stage	Industrial 24 V DC/DC Converter
Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards delivering up to 120 A to CPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 500–800 kHz with precise dead-time control. Use Value: 0.0057 Ω r_DS(on) reduces conduction loss by >30% vs. legacy 8 mΩ devices, directly improving VRM efficiency and thermal headroom.	Use Scenario: Isolated 24 V input to 5 V/12 V output DC/DC module for PLC I/O modules and motor drives. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology operating at 200–400 kHz. Use Value: Low Q_rr (38–60 nC) minimizes voltage spike and snubber losses during body diode commutation, improving system efficiency and reducing EMI filter size.
Automotive Body Control Module	Telecom 48 V Intermediate Bus Converter
Use Scenario: 12 V input DC/DC conversion for infotainment and ADAS domain controllers requiring ASIL-B functional safety compliance. IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck regulator powering microcontrollers and sensors. Use Value: -55 °C to +175 °C operating range ensures reliable operation under hood temperature extremes without derating.	Use Scenario: High-density 48 V to 12 V intermediate bus converter in 19" rack-mounted telecom equipment. IC Role / Device Role / Timing Role: Primary-side high-current switch in interleaved buck converter with paralleled phases. Use Value: TO-252 package with drain-connected tab allows direct mounting to aluminum baseplate, achieving <2.0 °C/W system-level thermal resistance.

Server VRM Output Stage

Industrial 24 V DC/DC Converter

Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards delivering up to 120 A to CPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 500–800 kHz with precise dead-time control.

Use Value: 0.0057 Ω r_DS(on) reduces conduction loss by >30% vs. legacy 8 mΩ devices, directly improving VRM efficiency and thermal headroom.

Use Scenario: Isolated 24 V input to 5 V/12 V output DC/DC module for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology operating at 200–400 kHz.

Use Value: Low Q_rr (38–60 nC) minimizes voltage spike and snubber losses during body diode commutation, improving system efficiency and reducing EMI filter size.

Automotive Body Control Module

Telecom 48 V Intermediate Bus Converter

Use Scenario: 12 V input DC/DC conversion for infotainment and ADAS domain controllers requiring ASIL-B functional safety compliance.

IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck regulator powering microcontrollers and sensors.

Use Value: -55 °C to +175 °C operating range ensures reliable operation under hood temperature extremes without derating.

Use Scenario: High-density 48 V to 12 V intermediate bus converter in 19" rack-mounted telecom equipment.

IC Role / Device Role / Timing Role: Primary-side high-current switch in interleaved buck converter with paralleled phases.

Use Value: TO-252 package with drain-connected tab allows direct mounting to aluminum baseplate, achieving <2.0 °C/W system-level thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	r_DS(on) = 0.0035 Ω @ 10 V but rated only for 30 V; higher Q_g (105 nC) increases gate drive loss.	Lower voltage rating limits use to ≤24 V systems; unsuitable for 30 V transient-tolerant designs.	Select only if system max V_DS remains ≤28 V and gate drive capability exceeds 1.5 A peak.
STL110N3LLH6	r_DS(on) = 0.0045 Ω @ 10 V, 100 A rating, but TO-263 package requires larger footprint and different thermal interface.	Higher current rating adds margin but increases cost and board area; thermal path less direct than TO-252 drain-tab.	Prefer when >90 A continuous current or extended lifetime at 150 °C junction temp is required.

Compared with IRL3803PBF and STL110N3LLH6, the SUD50N03-06AP-E3 delivers optimal balance of 30 V rating, ultra-low R_DS(on), and TO-252 thermal efficiency-making it ideal for space-constrained, high-frequency synchronous rectifiers where voltage margin and thermal resistance are critical.

Availability

SUD50N03-06AP-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial 24 V DC/DC converters, and automotive body control modules requiring stable component supply, RoHS compliance, and high-reliability power switching.

Supply support for SUD50N03-06AP-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability solutions for industrial and automotive markets.

The SUD50N03-06AP-E3 belongs to Vishay's TrenchFET® Gen III low-voltage power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in DC/DC conversion where low R_DS(on) and fast, controlled body diode recovery are essential.

FAQ

What is the maximum continuous drain current rating for SUD50N03-06AP-E3 at 70 °C case temperature?

The SUD50N03-06AP-E3 has a continuous drain current rating of 75 A at T_C = 70 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from the 90 A rating at 25 °C case temperature, based on R_thJC = 1.5 °C/W and maximum junction temperature of 175 °C. The SUD50N03-06AP-E3 maintains safe operation within this limit when PCB thermal design meets recommended minimum pad guidelines for TO-252.

Does SUD50N03-06AP-E3 support 4.5 V gate drive for full enhancement in low-voltage control applications?

Yes, the SUD50N03-06AP-E3 is fully characterized at V_GS = 4.5 V, with r_DS(on) = 0.0078 Ω (typical) and guaranteed maximum of 0.0078 Ω at I_D = 20 A. Its V_GS(th) range of 1.2–2.4 V ensures reliable turn-on with 3.3 V or 5 V logic-level controllers. The SUD50N03-06AP-E3 is explicitly optimized for low-side synchronous rectifier operation using such gate voltages, eliminating need for external level shifters.

What is the body diode reverse recovery charge (Q_rr) specification for SUD50N03-06AP-E3, and why does it matter in synchronous rectifier designs?

The SUD50N03-06AP-E3 specifies Q_rr = 38–60 nC at I_F = 6.7 A, dI/dt = 100 A/µs, and T_J = 25 °C. This parameter quantifies stored charge in the intrinsic body diode; lower Q_rr reduces voltage overshoot, switching loss, and EMI during the transition from diode conduction to MOSFET conduction. In synchronous rectifier applications, minimizing Q_rr directly improves efficiency and simplifies snubber design-key advantages delivered by the SUD50N03-06AP-E3.

Is SUD50N03-06AP-E3 pin-compatible with other TO-252 N-channel MOSFETs, and what layout considerations apply?

The SUD50N03-06AP-E3 uses the standard TO-252AA (DPAK) outline with G-S-D pinout matching JEDEC MS-012. It is mechanically pin-compatible with other TO-252 MOSFETs, but thermal and electrical performance depends on PCB layout: the drain-connected tab must be soldered to ≥1"² of 2 oz copper with thermal vias to internal planes. Recommended minimum pads per Application Note 826 ensure manufacturability and thermal integrity for the SUD50N03-06AP-E3.

How does the 100% R_g testing of SUD50N03-06AP-E3 impact gate driver design and system reliability?

The 100% R_g testing of SUD50N03-06AP-E3 guarantees gate resistance between 0.9–1.4 Ω across all units, enabling precise gate driver sizing without worst-case margining. This consistency reduces variation in turn-on/turn-off timing, suppresses shoot-through risk in half-bridge configurations, and lowers EMI by ensuring uniform dv/dt. For high-volume power supplies, this test enhances yield and long-term reliability-making the SUD50N03-06AP-E3 especially valuable in mission-critical SMD power stages.

SUD50N03-06AP-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 10W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50N03-06AP-E3 FAQ

1.How can I place an order for SUD50N03-06AP-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N03-06AP-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N03-06AP-E3 reliable?

The price and inventory of SUD50N03-06AP-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N03-06AP-E3 is usually 5 days.

3.What payment methods are accepted for SUD50N03-06AP-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N03-06AP-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N03-06AP-E3?

SUD50N03-06AP-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N03-06AP-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N03-06AP-E3?

For technical support, including SUD50N03-06AP-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N03-06AP-E3 requirements.

6.How does Aetrix verify that SUD50N03-06AP-E3 is sourced from the original manufacturer or authorized distributors?

All SUD50N03-06AP-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N03-06AP-E3 meets industry standards.

7.What is the process for return or replacement of SUD50N03-06AP-E3?

All SUD50N03-06AP-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N03-06AP-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N03-06AP-E3 part is unused and in its original packaging.

Return procedure for SUD50N03-06AP-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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