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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N03-06AP-T4E3

Name: SUD50N03-06AP-T4E3
Brand: Vishay Siliconix
SKU: SUD50N03-06AP-T4E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N03-06AP-T4E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N03-06AP-T4E3.pdf

Description:: MOSFET N-CH 30V 90A TO252

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Product details

Overview

SUD50N03-06AP-T4E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET optimized for low-side synchronous rectifier operation in DC/DC converters, with r_DS(on) = 0.0057 Ω at V_GS = 10 V, 90 A continuous drain current (T_C = 25 °C), and TO-252 package with drain-connected tab for enhanced thermal performance.

For engineers reviewing the SUD50N03-06AP-T4E3 datasheet, SUD50N03-06AP-T4E3 pinout, SUD50N03-06AP-T4E3 application, or SUD50N03-06AP-T4E3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100% R_g tested gate resistance, body diode recovery characteristics (t_rr = 65–100 ns), and thermal resistance R_thJC = 1.5 °C/W for high-efficiency power stage design.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (62–95 nC at V_GS = 10 V) and low Crss (305 pF), enabling high-frequency synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.2–2.4 V) supports logic-level and standard 5 V/10 V drive compatibility.

The device integrates a robust intrinsic body diode with V_SD = 0.9–1.5 V at I_S = 6.7 A and Q_rr = 38–60 nC, critical for minimizing reverse recovery losses in buck and LLC topologies. Thermal design is supported by R_thJC = 1.5 °C/W and R_thJA = 12–15 °C/W (t ≤ 10 sec) under defined PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/24 V input DC/DC stages
r_DS(on) @ 10 V	0.0057 Ω - Enables <1.7 W conduction loss at 50 A, critical for >95 % efficiency targets
r_DS(on) @ 4.5 V	0.0078 Ω - Supports direct 3.3 V/5 V controller gate drive without level-shifting
Q_g @ 10 V	62–95 nC - Determines gate driver power requirement and switching speed trade-off
t_rr	65–100 ns - Limits shoot-through risk and EMI during body diode commutation
R_thJC	1.5 °C/W - Allows ~55 W dissipation with 80 °C case temperature rise, enabling compact heatsinking
I_D (cont.)	90 A @ T_C = 25 °C - Package-limited current rating defines maximum safe operating area at low duty cycles

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain-connected copper tab for direct thermal path to PCB copper pour or heatsink. Standard three-terminal configuration: Gate (G), Source (S), Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; 100 % R_g tested to ensure consistent turn-on timing across production lots
S	Source reference node	Common return for gate drive and load current; ties to power ground plane in low-side switch layout
D	Drain output / power terminal	Connected internally to exposed tab; must be soldered to large copper area for thermal and current handling

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading r_DS(on) × Q_g figure-of-merit for high-frequency power conversion
Optimized for low-side synchronous rectification	Low V_GS(th) and fast t_rr reduce body diode conduction time and associated losses
100 % R_g tested	Guarantees gate resistance between 0.9–1.4 Ω, ensuring predictable gate charge timing and driver stress
RoHS-compliant lead-free termination	SUD50N03-06AP-T4E3 meets JEDEC J-STD-020 reflow profile requirements for Pb-free assembly
Drain-connected tab	Enables direct thermal coupling to PCB; R_thJC = 1.5 °C/W supports high-power density designs

Applications

Buck Converter Power Stage	Server VRM Low-Side Switch
Use Scenario: High-current, high-frequency (300–1000 kHz) step-down regulation for CPU/GPU core voltage. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 0.0078 Ω r_DS(on) at 4.5 V enables >90 % efficiency at 100 A output with minimal thermal derating.	Use Scenario: Multi-phase voltage regulator module supplying 0.8–1.8 V at up to 200 A per rail in datacenter servers. IC Role / Device Role / Timing Role: Primary low-side switch in each phase leg, driven by dedicated gate controller IC. Use Value: Fast t_rr (65–100 ns) and low Q_rr (38–60 nC) minimize dead-time losses and EMI generation during phase interleaving.
Industrial DC/DC Module	Telecom POL Converter
Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in factory automation equipment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: 90 A continuous rating and R_thJC = 1.5 °C/W support 100 W+ output in compact, fanless enclosures.	Use Scenario: Point-of-load converter delivering 3.3 V/5 V from 12 V or 48 V backplane in telecom line cards. IC Role / Device Role / Timing Role: Low-side switch in monolithic or discrete buck regulator with tight transient response requirements. Use Value: Low V_GS(th) (1.2–2.4 V) ensures reliable turn-on with 3.3 V gate drivers, reducing BOM count and layout complexity.

Buck Converter Power Stage

Server VRM Low-Side Switch

Use Scenario: High-current, high-frequency (300–1000 kHz) step-down regulation for CPU/GPU core voltage.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 0.0078 Ω r_DS(on) at 4.5 V enables >90 % efficiency at 100 A output with minimal thermal derating.

Use Scenario: Multi-phase voltage regulator module supplying 0.8–1.8 V at up to 200 A per rail in datacenter servers.

IC Role / Device Role / Timing Role: Primary low-side switch in each phase leg, driven by dedicated gate controller IC.

Use Value: Fast t_rr (65–100 ns) and low Q_rr (38–60 nC) minimize dead-time losses and EMI generation during phase interleaving.

Industrial DC/DC Module

Telecom POL Converter

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in factory automation equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: 90 A continuous rating and R_thJC = 1.5 °C/W support 100 W+ output in compact, fanless enclosures.

Use Scenario: Point-of-load converter delivering 3.3 V/5 V from 12 V or 48 V backplane in telecom line cards.

IC Role / Device Role / Timing Role: Low-side switch in monolithic or discrete buck regulator with tight transient response requirements.

Use Value: Low V_GS(th) (1.2–2.4 V) ensures reliable turn-on with 3.3 V gate drivers, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	r_DS(on) = 0.006 Ω @ 10 V; higher Q_g (80 nC); TO-220 package	Larger footprint and higher R_thJA; less suitable for ultra-thin or high-density layouts	Prefer SUD50N03-06AP-T4E3 for surface-mount, thermally constrained designs requiring DPAK form factor
DMT3006LPS-13	r_DS(on) = 0.0055 Ω @ 10 V; lower Q_g (52 nC); same TO-252 package	Improved FOM but tighter V_GS(th) range (1.0–2.0 V) increases risk of spurious turn-on in noisy environments	Prefer SUD50N03-06AP-T4E3 where gate drive margin and body diode softness are prioritized over minimal R_DS(on)

Compared with IRL3803PbF and DMT3006LPS-13, the SUD50N03-06AP-T4E3 offers balanced trade-offs: competitive r_DS(on), verified R_g consistency, and robust body diode recovery-making it optimal for industrial and telecom DC/DC where reliability and thermal management outweigh marginal R_DS(on) gains.

Availability

SUD50N03-06AP-T4E3 is available at Aetrix Electronics and suitable for buck converters, server VRMs, and industrial DC/DC modules requiring stable component supply, RoHS compliance, and proven thermal performance in TO-252 packaging.

Supply support for SUD50N03-06AP-T4E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The SUD50N03-06AP-T4E3 belongs to Vishay's TrenchFET® Gen IV low-voltage power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in space-constrained, thermally demanding power supplies.

FAQ

What is the maximum continuous drain current rating for the SUD50N03-06AP-T4E3?

The SUD50N03-06AP-T4E3 has a continuous drain current rating of 90 A when case temperature (T_C) is maintained at 25 °C. At T_C = 70 °C, the rating drops to 75 A due to thermal derating. The package-limited current is 50 A under steady-state conditions, meaning actual design limits depend on PCB thermal design and ambient conditions. Always verify junction temperature using R_thJC = 1.5 °C/W in your layout.

Does the SUD50N03-06AP-T4E3 support 4.5 V gate drive in practical applications?

Yes, the SUD50N03-03AP-T4E3 is fully specified for 4.5 V gate drive: r_DS(on) = 0.0078 Ω (typical) at V_GS = 4.5 V and I_D = 20 A. Its V_GS(th) range of 1.2–2.4 V ensures strong enhancement-mode turn-on with standard 3.3 V or 5 V controllers. This eliminates need for gate boosters in many point-of-load and telecom POL designs.

How does the body diode performance of the SUD50N03-06AP-T4E3 impact synchronous rectifier design?

The SUD50N03-06AP-T4E3 features a well-characterized intrinsic body diode with V_SD = 0.9–1.5 V at I_S = 6.7 A and reverse recovery time t_rr = 65–100 ns. These parameters directly affect dead-time optimization and EMI in synchronous buck converters. Low Q_rr (38–60 nC) reduces voltage spikes during commutation, improving system reliability versus older MOSFET generations.

Is the SUD50N03-06AP-T4E3 RoHS compliant and what does the "-T4E3" suffix indicate?

Yes, the SUD50N03-06AP-T4E3 is RoHS compliant with lead-free terminations. The "-T4E3" suffix denotes tape-and-reel packaging (T4) and lead-free (E3) finish per JEDEC standards. It replaces legacy "-E3" versions and is qualified for standard Pb-free reflow profiles (J-STD-020). No exemptions apply-the device contains no intentionally added lead.

What thermal considerations are critical when using the SUD50N03-06AP-T4E3 in high-power applications?

For high-power use, the SUD50N03-06AP-T4E3 requires a minimum 1" × 1" FR4 copper pour connected to the drain tab, per Vishay's recommended pad layout (Application Note 826). Junction-to-case thermal resistance is 1.5 °C/W, so maintaining T_C ≤ 70 °C limits P_D to 58 W. Exceeding this without forced cooling risks exceeding T_J(max) = 175 °C. Thermal simulation and IR imaging are recommended for >40 W designs.

SUD50N03-06AP-T4E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 10W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252

SUD50N03-06AP-T4E3 FAQ

1.How can I place an order for SUD50N03-06AP-T4E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N03-06AP-T4E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N03-06AP-T4E3 reliable?

The price and inventory of SUD50N03-06AP-T4E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N03-06AP-T4E3 is usually 5 days.

3.What payment methods are accepted for SUD50N03-06AP-T4E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N03-06AP-T4E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N03-06AP-T4E3?

SUD50N03-06AP-T4E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N03-06AP-T4E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N03-06AP-T4E3?

For technical support, including SUD50N03-06AP-T4E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N03-06AP-T4E3 requirements.

6.How does Aetrix verify that SUD50N03-06AP-T4E3 is sourced from the original manufacturer or authorized distributors?

All SUD50N03-06AP-T4E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N03-06AP-T4E3 meets industry standards.

7.What is the process for return or replacement of SUD50N03-06AP-T4E3?

All SUD50N03-06AP-T4E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N03-06AP-T4E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N03-06AP-T4E3 part is unused and in its original packaging.

Return procedure for SUD50N03-06AP-T4E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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