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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N03-09P-E3

Name: SUD50N03-09P-E3
Brand: Vishay Siliconix
SKU: SUD50N03-09P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N03-09P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N03-09P-E3.pdf

Description:: MOSFET N-CH 30V 63A TO252

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Product details

Overview

SUD50N03-09P-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in TO-252 package, optimized for high- or low-side switching in DC/DC converters and synchronous rectifiers, with R_DS(on) = 0.0095 Ω at V_GS = 10 V, 63 A continuous drain current at T_C = 25 °C, and drain-connected tab for enhanced thermal performance.

For engineers reviewing the SUD50N03-09P-E3 datasheet, SUD50N03-09P-E3 pinout, SUD50N03-09P-E3 application, or SUD50N03-09P-E3 equivalent, key selection criteria include its 30-V V_DS, 0.0095 Ω on-resistance at 10 V gate drive, 63 A thermal-limited current, TO-252 thermal resistance (R_thJC = 1.8 °C/W), and RoHS-compliant lead-free termination.

Technical Context

This device uses trench-gate MOSFET technology to achieve low R_DS(on) and fast switching with Q_g = 16 nC at V_DS = 15 V, V_GS = 4.5 V, and I_D = 50 A. Its gate threshold voltage range (1.0–3.0 V) supports standard logic-level and 5-V microcontroller drive.

The integrated body diode exhibits V_SD = 1.2–1.5 V at I_F = 50 A and t_rr = 35–70 ns under specified di/dt conditions, enabling efficient synchronous rectification without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24-V input DC/DC stages and automotive auxiliary rails
R_DS(on)	0.0095 Ω at V_GS = 10 V - Enables <1 W conduction loss at 32 A in high-current buck phases
I_D (continuous)	63 A at T_C = 25 °C - Thermal-limited current with TO-252 copper-tab mounting on PCB
Q_g	16 nC - Gate charge supporting <25 ns turn-on delay and 15–25 ns rise time at R_g = 2.5 Ω
R_thJC	1.8 °C/W (typ.) - Junction-to-case thermal resistance enabling >50 W power dissipation with heatsink
V_GS(th)	1.0–3.0 V - Compatible with 3.3-V and 5-V logic-level gate drivers without level shifting
C_iss	2200 pF - Input capacitance influencing gate driver sizing and EMI filtering requirements

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain-connected copper tab for thermal and electrical grounding. Dimensions per Vishay document 71197: D = 6.09 mm, E = 6.54 mm, H = 9.91 mm, L = 1.59 mm, e = 2.28 mm (BSC), e1 = 4.56 mm (BSC).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–20 V gate-source voltage; requires <16 nC charge for full enhancement
S	Source	Reference node for gate drive and current return path; tied to power ground in low-side configurations
D	Drain	Main power output terminal; electrically and thermally connected to exposed copper tab for PCB heat sinking

Key Features

Feature	Design Value
TrenchFET® structure	Enables 0.0095 Ω R_DS(on) at 10 V while maintaining rugged avalanche rating (E_AS = 61 mJ)
100 % R_g tested	Guarantees gate resistance between 0.5–2.1 Ω, ensuring consistent switching timing across production lots
Optimized for high- or low-side use	Supports both bootstrap and direct-drive topologies without requiring external gate protection circuitry
Drain-connected tab	Provides low-inductance, low-thermal-resistance path to PCB copper pour for improved efficiency and reliability
RoHS-compliant lead-free finish	E3 suffix denotes Pb-free terminations meeting JEDEC J-STD-020 reflow profile requirements

Applications

DC/DC Buck Converters	Synchronous Rectifiers
Use Scenario: High-efficiency 12-V to 3.3-V point-of-load conversion in server VRMs and telecom power modules. IC Role / Device Role: Low-side power switch handling up to 63 A continuous current with minimal conduction loss. Use Value: 0.0095 Ω R_DS(on) reduces I²R losses by >30 % versus comparable 12-mΩ MOSFETs at 40 A load.	Use Scenario: Secondary-side rectification in isolated 48-V to 12-V forward or LLC converters. IC Role / Device Role: Active rectifier replacing Schottky diode to minimize forward voltage drop and improve light-load efficiency. Use Value: Body diode V_SD = 1.2 V and t_rr = 35 ns enable clean commutation with <100 ns dead-time control.
Motor Drive Half-Bridges	Hot-Swap Controllers
Use Scenario: 24-V BLDC motor phase leg switching in industrial actuators and HVAC blowers. IC Role / Device Role: High-current, low-R_DS(on) half-bridge switch operating at 20–50 kHz PWM frequencies. Use Value: 63 A rating and 1.8 °C/W R_thJC support sustained 40-A RMS current with <65 °C junction rise on 2-oz copper.	Use Scenario: Inrush current limiting and fault isolation in 30-V backplane power distribution units. IC Role / Device Role: Low-R_DS(on) series pass element controlled via gate driver for soft-start and overcurrent shutdown. Use Value: 30-V V_DS and 50-A pulsed rating (I_DM) accommodate 2× inrush surges without avalanche stress.

DC/DC Buck Converters

Synchronous Rectifiers

Use Scenario: High-efficiency 12-V to 3.3-V point-of-load conversion in server VRMs and telecom power modules.

IC Role / Device Role: Low-side power switch handling up to 63 A continuous current with minimal conduction loss.

Use Value: 0.0095 Ω R_DS(on) reduces I²R losses by >30 % versus comparable 12-mΩ MOSFETs at 40 A load.

Use Scenario: Secondary-side rectification in isolated 48-V to 12-V forward or LLC converters.

IC Role / Device Role: Active rectifier replacing Schottky diode to minimize forward voltage drop and improve light-load efficiency.

Use Value: Body diode V_SD = 1.2 V and t_rr = 35 ns enable clean commutation with <100 ns dead-time control.

Motor Drive Half-Bridges

Hot-Swap Controllers

Use Scenario: 24-V BLDC motor phase leg switching in industrial actuators and HVAC blowers.

IC Role / Device Role: High-current, low-R_DS(on) half-bridge switch operating at 20–50 kHz PWM frequencies.

Use Value: 63 A rating and 1.8 °C/W R_thJC support sustained 40-A RMS current with <65 °C junction rise on 2-oz copper.

Use Scenario: Inrush current limiting and fault isolation in 30-V backplane power distribution units.

IC Role / Device Role: Low-R_DS(on) series pass element controlled via gate driver for soft-start and overcurrent shutdown.

Use Value: 30-V V_DS and 50-A pulsed rating (I_DM) accommodate 2× inrush surges without avalanche stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 0.006 Ω at V_GS = 10 V; higher Q_g = 22 nC; TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 2.5 °C/W); less suitable for space-constrained SMT designs	Select when lower on-resistance is critical and board area allows through-hole mounting.
STL220N3LLH6	R_DS(on) = 0.0022 Ω at V_GS = 10 V; 40-V V_DS; PowerFLAT 5x6 package; no drain-tab connection	Higher voltage margin but lacks exposed drain tab; requires careful thermal pad layout for equivalent cooling	Select for ultra-low-loss 24-V systems where 40-V rating adds safety margin and footprint is constrained.

Compared with IRL3803PbF and STL220N3LLH6, the SUD50N03-09P-E3 delivers optimal balance of low R_DS(on), proven TO-252 thermal performance, and RoHS-compliant SMT compatibility-making it preferred for cost-sensitive, high-volume DC/DC and motor control designs requiring validated manufacturability.

Availability

SUD50N03-09P-E3 is available at Aetrix Electronics and suitable for DC/DC converters, synchronous rectifiers, and motor drive half-bridges requiring stable component supply, consistent parametric performance, and long-term RoHS-compliant sourcing.

Supply support for SUD50N03-09P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The SUD50N03-09P-E3 belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-efficiency, high-current switching in compact surface-mount power supplies and motor controllers.

FAQ

What is the maximum continuous drain current rating for the SUD50N03-09P-E3 at 100 °C case temperature?

The SUD50N03-09P-E3 has a continuous drain current rating of 44.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and must be applied when ambient or board temperatures exceed 25 °C. The SUD50N03-09P-E3 datasheet confirms this value is based on maximum allowable junction temperature and package power dissipation constraints.

Does the SUD50N03-09P-E3 have avalanche capability, and what is its rated single-pulse energy?

Yes, the SUD50N03-09P-E3 is rated for avalanche operation with a single-pulse avalanche energy (E_AS) of 61 mJ at L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. This capability enables robustness against inductive switching transients in motor drives and DC/DC converters. The SUD50N03-09P-E3 specification sheet explicitly lists this parameter under "Single Pulse Avalanche Energy".

What is the gate threshold voltage range for the SUD50N03-09P-E3, and how does it affect drive compatibility?

The SUD50N03-09P-E3 has a gate threshold voltage (V_GS(th)) range of 1.0 V to 3.0 V at I_D = 250 µA, making it compatible with 3.3-V and 5-V logic-level gate drivers without level-shifting circuitry. This ensures reliable turn-on with standard microcontroller GPIOs or dedicated MOSFET drivers. The SUD50N03-09P-E3 datasheet specifies this range under "Static" parameters at T_J = 25 °C.

How does the drain-connected tab of the SUD50N03-09P-E3 impact PCB layout and thermal design?

The drain-connected tab of the SUD50N03-09P-E3 must be soldered directly to a large copper pour or thermal pad on the PCB to realize its 1.8 °C/W typical junction-to-case thermal resistance. This tab serves as both the primary electrical drain node and thermal conduction path-so routing traces to the tab is unnecessary and counterproductive. The SUD50N03-09P-E3 package outline (TO-252AA) and recommended pads are documented in Vishay application note AN826.

Is the SUD50N03-09P-E3 suitable for synchronous rectification, and what body diode characteristics support that use?

Yes, the SUD50N03-09P-E3 is explicitly listed for synchronous rectifier applications in its official product summary. Its body diode has V_SD = 1.2–1.5 V at I_F = 50 A and reverse recovery time t_rr = 35–70 ns, enabling efficient replacement of Schottky diodes in secondary-side rectification. These values are measured per the SUD50N03-09P-E3 datasheet's "Source-Drain Diode Ratings" section.

SUD50N03-09P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 7.5W (Ta), 65.2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50N03-09P-E3 FAQ

1.How can I place an order for SUD50N03-09P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N03-09P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N03-09P-E3 reliable?

The price and inventory of SUD50N03-09P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N03-09P-E3 is usually 5 days.

3.What payment methods are accepted for SUD50N03-09P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N03-09P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N03-09P-E3?

SUD50N03-09P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N03-09P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N03-09P-E3?

For technical support, including SUD50N03-09P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N03-09P-E3 requirements.

6.How does Aetrix verify that SUD50N03-09P-E3 is sourced from the original manufacturer or authorized distributors?

All SUD50N03-09P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N03-09P-E3 meets industry standards.

7.What is the process for return or replacement of SUD50N03-09P-E3?

All SUD50N03-09P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N03-09P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N03-09P-E3 part is unused and in its original packaging.

Return procedure for SUD50N03-09P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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