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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N03-12P-E3

Name: SUD50N03-12P-E3
Brand: Vishay Siliconix
SKU: SUD50N03-12P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N03-12P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N03-12P-E3.pdf

Description:: MOSFET N-CH 30V TO252

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Product details

Overview

SUD50N03-12P-E3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Power MOSFET in TO-252 package, rated for 17.5 A continuous drain current at 25 °C, with R_DS(on) = 0.0120 Ω at V_GS = 10 V and 0.0175 Ω at V_GS = 4.5 V, used in DC-DC converter high-side switching and motor drive half-bridge legs.

For engineers reviewing the SUD50N03-12P-E3 datasheet, SUD50N03-12P-E3 pinout, SUD50N03-12P-E3 application, or SUD50N03-12P-E3 equivalent, key selection criteria include its 30 V V_DS, 100 % R_g and UIS tested reliability, RoHS-compliant lead-free construction, and thermal performance with R_thJC = 2.6 °C/W.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low on-resistance and fast switching in surface-mount power conversion topologies. Its gate threshold voltage (1–3 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the integrated source-drain diode supports synchronous rectification and freewheeling operation.

The device features a drain-connected tab for direct thermal coupling to PCB copper, with maximum junction temperature of 175 °C and avalanche energy rating of 45 mJ. Its C_iss = 1600 pF and Q_g = 28–42 nC support efficient gate driving in high-frequency PWM applications up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V system rail protection and buck converter switches
R_DS(on) @ V_GS = 10 V	0.0120 Ω - Enables ≤2.1 W conduction loss at 17.5 A, suitable for thermally constrained PCB layouts
R_DS(on) @ V_GS = 4.5 V	0.0175 Ω - Ensures usable on-state performance with standard 5 V microcontroller GPIO drive
I_D Continuous @ T_A = 25 °C	17.5 A - Supports medium-power motor control and industrial SMPS without forced air cooling
Q_g Total Gate Charge	28–42 nC - Determines gate driver power requirement and switching transition time in hard-switched converters
R_thJC	2.6 °C/W (typ.) - Allows direct heatsinking via drain tab to internal ground plane or external metal layer
E_AS	45 mJ - Provides robustness against inductive load switching transients without external snubbers

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical grounding. Dimensions per Vishay document 71197: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), gage plane height 0.5 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <1.5 Ω series gate resistor for optimal EMI and dV/dt control
S (Source)	Reference node for gate drive and current return path	Common connection point for low-side sensing, feedback networks, and driver IC reference; tied to PCB ground plane
D (Drain)	Main power output terminal	Connected internally to exposed metal tab; must be soldered to ≥200 mm² copper pour for thermal management and low-inductance high-current routing

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact 24 V power stages in space-constrained designs
100 % R_g and UIS tested	Ensures gate resistance consistency and single-pulse avalanche ruggedness across all production units-critical for automotive and industrial reliability
RoHS-compliant, lead-free (Pb-free)	Meets EU Directive 2002/95/EC; compatible with standard SnAgCu reflow profiles and halogen-free assembly processes
Drain-connected tab	Enables direct thermal path from junction to PCB copper, reducing R_thJA by up to 40 % versus non-tabbed packages under identical layout conditions
Low Q_gd/Q_g ratio (≈0.12)	Minimizes Miller effect during switching transitions, improving noise immunity and enabling stable operation with high dV/dt rates

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: High-efficiency 12–24 V input to 3.3/5/12 V output conversion in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz PWM frequency. Use Value: Low R_DS(on) reduces conduction losses below 1.5 W at full load, enabling natural convection cooling in sealed enclosures.	Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: Half-bridge upper-leg switch with complementary low-side FET, driven by isolated gate driver. Use Value: Avalanche-rated design withstands flyback energy from motor inductance without external clamping diodes.
LED Constant-Current Driver	Hot-Swap Controller
Use Scenario: High-brightness LED string regulation in outdoor signage with ambient temperatures up to 85 °C. IC Role / Device Role / Timing Role: Series pass element in linear or pseudo-linear constant-current loop with analog dimming. Use Value: 175 °C max junction temperature allows sustained operation at elevated ambient without derating in thermally isolated housings.	Use Scenario: Inrush current limiting and fault protection for 24 V backplane insertion in telecom shelf systems. IC Role / Device Role / Timing Role: Main pass transistor in active hot-swap controller IC reference design (e.g., LTC4215). Use Value: Low gate charge enables fast turn-on/off response (<50 ns rise/fall) for precise current limiting and short-circuit shutdown.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12–24 V input to 3.3/5/12 V output conversion in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz PWM frequency.

Use Value: Low R_DS(on) reduces conduction losses below 1.5 W at full load, enabling natural convection cooling in sealed enclosures.

Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch with complementary low-side FET, driven by isolated gate driver.

Use Value: Avalanche-rated design withstands flyback energy from motor inductance without external clamping diodes.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: High-brightness LED string regulation in outdoor signage with ambient temperatures up to 85 °C.

IC Role / Device Role / Timing Role: Series pass element in linear or pseudo-linear constant-current loop with analog dimming.

Use Value: 175 °C max junction temperature allows sustained operation at elevated ambient without derating in thermally isolated housings.

Use Scenario: Inrush current limiting and fault protection for 24 V backplane insertion in telecom shelf systems.

IC Role / Device Role / Timing Role: Main pass transistor in active hot-swap controller IC reference design (e.g., LTC4215).

Use Value: Low gate charge enables fast turn-on/off response (<50 ns rise/fall) for precise current limiting and short-circuit shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.014 Ω @ 10 V; TO-252 package; higher Q_g = 48 nC; no 100 % UIS test specified	Marginally higher conduction loss; less robust under repetitive avalanche stress	Acceptable where cost sensitivity outweighs avalanche margin requirements
DMN3025LSD-13	R_DS(on) = 0.018 Ω @ 10 V; dual N-channel SO-8; lower I_D = 12 A; R_thJA = 50 °C/W (higher thermal resistance)	Not suitable for same power level without significant derating; limited to low-power dual-switch configurations	Only viable in space-constrained dual-FET applications where total current ≤12 A per channel

Compared with IRF7470PBF and DMN3025LSD-13, the SUD50N03-12P-E3 delivers superior thermal performance (R_thJC = 2.6 °C/W), verified avalanche ruggedness, and tighter R_DS(on) tolerance-making it preferred for industrial motor drives and high-reliability DC-DC converters where thermal headroom and transient robustness are critical.

Availability

SUD50N03-12P-E3 is available at Aetrix Electronics and suitable for DC-DC buck converters, brushed DC motor drivers, and LED constant-current drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SUD50N03-12P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SUD50N03-12P-E3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-density power conversion in surface-mount applications demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for the SUD50N03-12P-E3 at 100 °C ambient temperature?

The SUD50N03-12P-E3 supports 12.4 A continuous drain current at T_A = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under natural convection; actual current capability increases with PCB copper area and airflow. The SUD50N03-12P-E3 datasheet confirms this value applies to surface-mounted FR4 boards with t ≤ 10 s pulse duration.

Does the SUD50N03-12P-E3 require a gate resistor, and if so, what value is recommended?

Yes, the SUD50N03-12P-E3 benefits from a series gate resistor to control dI/dt and suppress ringing. Vishay recommends 1–2.5 Ω for typical 250–500 kHz PWM applications, based on its Q_g = 28–42 nC and R_g = 0.3–3.0 Ω internal gate resistance. The SUD50N03-12P-E3 gate driver interface must account for this to ensure clean turn-on/turn-off transitions and minimize EMI.

Is the SUD50N03-12P-E3 suitable for logic-level gate drive from a 3.3 V microcontroller?

The SUD50N03-12P-E3 has a gate threshold voltage range of 1–3 V, but its R_DS(on) = 0.0175 Ω at V_GS = 4.5 V-not 3.3 V. At 3.3 V, R_DS(on) rises significantly (>0.03 Ω), increasing conduction loss. For reliable 3.3 V drive, the SUD50N03-12P-E3 should be paired with a gate driver or level shifter; it is not a true logic-level MOSFET.

How is thermal performance affected when the SUD50N03-12P-E3 drain tab is not soldered to a copper plane?

Without soldering the drain tab to ≥200 mm² of 2 oz copper, the SUD50N03-12P-E3 junction-to-ambient thermal resistance degrades from 18 °C/W (t ≤ 10 s) to up to 50 °C/W (steady state), risking thermal runaway above 5 A. The SUD50N03-12P-E3 datasheet explicitly ties R_thJA values to proper tab soldering per Application Note 826 pad layout guidelines.

What does "100 % R_g and UIS tested" mean for the SUD50N03-12P-E3?

"100 % R_g tested" means every SUD50N03-12P-E3 unit undergoes production screening for gate resistance (0.3–3.0 Ω), ensuring consistent drive requirements. "100 % UIS tested" confirms each device passes unclamped inductive switching stress at I_AS = 30 A and E_AS = 45 mJ-verifying avalanche ruggedness beyond typical qualification sampling. This is documented in Vishay specification 72267.

SUD50N03-12P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 6.5W (Ta), 46.8W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50N03-12P-E3 FAQ

1.How can I place an order for SUD50N03-12P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N03-12P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N03-12P-E3 reliable?

The price and inventory of SUD50N03-12P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N03-12P-E3 is usually 5 days.

3.What payment methods are accepted for SUD50N03-12P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N03-12P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N03-12P-E3?

SUD50N03-12P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N03-12P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N03-12P-E3?

For technical support, including SUD50N03-12P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N03-12P-E3 requirements.

6.How does Aetrix verify that SUD50N03-12P-E3 is sourced from the original manufacturer or authorized distributors?

All SUD50N03-12P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N03-12P-E3 meets industry standards.

7.What is the process for return or replacement of SUD50N03-12P-E3?

All SUD50N03-12P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N03-12P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N03-12P-E3 part is unused and in its original packaging.

Return procedure for SUD50N03-12P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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