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Vishay Siliconix SUD50N03-12P-GE3
- Part No.:
- SUD50N03-12P-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD50N03-12P-GE3.pdf
- Description:
- MOSFET N-CH 30V 16.8A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:6,444
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Product details
Overview
SUD50N03-12P-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 16.8 A continuous drain current at 25 °C, and 0.012 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency low-side switching device in DC-DC converters, motor drivers, and load-switching circuits.
For engineers reviewing the SUD50N03-12P-GE3 datasheet, SUD50N03-12P-GE3 pinout, SUD50N03-12P-GE3 application, or SUD50N03-12P-GE3 equivalent, key selection criteria include its TO-252 package thermal performance, 100 % Rg and UIS tested reliability, and verified 45 mJ single-pulse avalanche energy rating.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching. Its gate threshold voltage (1–3 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the 28 nC typical total gate charge supports efficient PWM operation up to several hundred kHz.
The device features a drain-connected tab for direct thermal coupling to PCB copper, with RthJC = 2.6 °C/W (typical) and RthJA = 18 °C/W (t ≤ 10 s). The integrated body diode has 1.2–1.5 V forward voltage at 40 A and 25–70 ns reverse recovery time under specified dI/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V rail applications with margin |
| RDS(on) @ 10 V | 0.012 Ω - Enables <1 W conduction loss at 13.9 A continuous current |
| ID (continuous) | 16.8 A @ TA = 25 °C - Supports high-current load switching on standard FR4 |
| Qg (total) | 28 nC (typ) - Determines gate driver power requirement and switching speed |
| EAS | 45 mJ - Confirmed single-pulse avalanche capability for inductive load protection |
| VGS(th) | 1–3 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO |
| Ciss | 1600 pF - Impacts high-frequency gate drive impedance and EMI behavior |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires <3 Ω gate resistance to limit ringing and ensure stable switching |
| D | Drain | Main power output node; electrically and thermally connected to exposed tab |
| S | Source | Reference node for gate drive and current sensing; common return path for load current |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lower RDS(on) per die area than planar MOSFETs, enabling compact high-current designs |
| 100 % Rg tested | Guarantees gate resistance ≤3.0 Ω, ensuring predictable gate drive timing and reduced oscillation risk |
| 100 % UIS tested | Verifies robustness against unclamped inductive switching stress without external snubbers |
| Lead (Pb)-free and halogen-free | Complies with JEDEC JS709A and RoHS Directive 2011/65/EU for environmentally constrained deployments |
| Drain-connected tab | Provides low-impedance thermal path to PCB; requires minimum 0.420″ × 0.224″ copper pad per Vishay AN826 |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency synchronous rectification in 12 V input, 5 V/10 A output buck regulator. IC Role / Device Role: Low-side power switch handling continuous 10 A load current with minimal conduction loss. Use Value: 0.012 Ω RDS(on) limits I²R loss to 1.2 W at full load, reducing thermal design burden. |
Use Scenario: H-bridge half-bridge leg driving 24 V, 8 A brushed motor in industrial actuator. IC Role / Device Role: Low-side switch controlling motor direction and enabling PWM speed control. Use Value: 45 mJ EAS withstands flyback energy during PWM turn-off without external clamping. |
| Hot-Swap Load Switch | LED Constant-Current Driver |
Use Scenario: Inrush-limited 24 V board-level power insertion with soft-start and overcurrent protection. IC Role / Device Role: Main pass element controlled by external current-sense amplifier and comparator. Use Value: 16.8 A continuous rating supports >15 A steady-state loads; 40 A pulsed rating accommodates startup surges. |
Use Scenario: Linear constant-current sink for high-brightness LED string in architectural lighting. IC Role / Device Role: Adjustable current-regulating pass transistor in analog dimming topology. Use Value: Low VGS(th) (1–3 V) allows precise current setting with 2.5 V reference; 0.0175 Ω RDS(on) @ 4.5 V enables 3.3 V MCU control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLZ44NPBF | RDS(on) = 0.028 Ω @ 10 V; higher on-resistance; TO-220 package | Larger footprint and higher thermal resistance (RthJA ≈ 62 °C/W); less suitable for space-constrained PCBs | Choose when legacy TO-220 mounting is required and 0.028 Ω RDS(on) is acceptable for thermal budget |
| DMN3025LSD-13 | RDS(on) = 0.025 Ω @ 10 V; dual N-channel SO-8; lower current rating (12 A) | Smaller footprint but limited to lower-power applications; no drain-tab thermal path | Prefer for dual-switch configurations where board area is critical and peak current ≤12 A |
Compared with IRLZ44NPBF and DMN3025LSD-13, the SUD50N03-12P-GE3 delivers superior thermal performance via its TO-252 drain-tab layout and lowest RDS(on), making it optimal for high-current, space-constrained, and thermally demanding applications.
Availability
SUD50N03-12P-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and hot-swap power distribution systems requiring stable component supply and long-term industrial availability.
Supply support for SUD50N03-12P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SUD50N03-12P-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered for high-efficiency, low-voltage power switching in compact surface-mount form factors with enhanced ruggedness and process consistency.
FAQ
What is the maximum junction temperature rating for the SUD50N03-12P-GE3?
The SUD50N03-12P-GE3 has a specified operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table of Vishay document 67357. The device is designed to sustain continuous operation at 150 °C junction temperature, provided thermal design meets the RthJA and RthJC limits under actual board conditions. Derating curves in the datasheet show allowable current reduction above 25 °C ambient.
Does the SUD50N03-12P-GE3 support logic-level gate drive?
Yes, the SUD50N03-12P-GE3 supports logic-level gate drive with a guaranteed gate threshold voltage (VGS(th)) of 1–3 V. At VGS = 4.5 V, it delivers 13.9 A continuous drain current and achieves RDS(on) = 0.0175 Ω - sufficient for robust switching with 3.3 V or 5 V microcontrollers. This eliminates the need for gate driver ICs in many low-to-mid power applications.
Is the SUD50N03-12P-GE3 suitable for avalanche-prone circuits like relay or solenoid driving?
Yes, the SUD50N03-12P-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for 45 mJ single-pulse avalanche energy (EAS) at TJ = 25 °C. This makes it suitable for driving inductive loads such as relays and solenoids without external snubbers, provided the inductive energy per switching event remains within the EAS limit and pulse repetition rate allows adequate junction cooling.
What is the thermal resistance from junction to case (RthJC) for the SUD50N03-12P-GE3?
The SUD50N03-12P-GE3 has a typical junction-to-case thermal resistance (RthJC) of 2.6 °C/W, with a maximum of 3.2 °C/W, as specified in the Thermal Resistance Ratings table of Vishay document 67357. This low value is enabled by the drain-connected copper tab, which must be soldered to a large PCB copper area per Application Note AN826 to realize full thermal benefit.
How does the SUD50N03-12P-GE3 compare to earlier-generation Vishay DPAK MOSFETs in terms of RDS(on)?
The SUD50N03-12P-GE3 achieves 0.012 Ω RDS(on) at VGS = 10 V - a 20–30 % improvement over prior-gen 30 V DPAK MOSFETs like the SI3457DV (0.015 Ω). This gain results from Vishay's TrenchFET® Gen III process optimization, directly reducing conduction losses and improving efficiency in high-current, low-voltage applications.
SUD50N03-12P-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SUD50N03-12P-GE3 FAQ
1.How can I place an order for SUD50N03-12P-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD50N03-12P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD50N03-12P-GE3 reliable?
The price and inventory of SUD50N03-12P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N03-12P-GE3 is usually 5 days.
3.What payment methods are accepted for SUD50N03-12P-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N03-12P-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD50N03-12P-GE3?
SUD50N03-12P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD50N03-12P-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD50N03-12P-GE3?
For technical support, including SUD50N03-12P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N03-12P-GE3 requirements.
6.How does Aetrix verify that SUD50N03-12P-GE3 is sourced from the original manufacturer or authorized distributors?
All SUD50N03-12P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N03-12P-GE3 meets industry standards.
7.What is the process for return or replacement of SUD50N03-12P-GE3?
All SUD50N03-12P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N03-12P-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD50N03-12P-GE3 part is unused and in its original packaging.
Return procedure for SUD50N03-12P-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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