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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N04-8M8P-4BE3

Name: SUD50N04-8M8P-4BE3
Brand: Vishay Siliconix
SKU: SUD50N04-8M8P-4BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N04-8M8P-4BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N04-8M8P-4BE3.pdf

Description:: MOSFET N-CH 40V 14A/50A DPAK

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Product details

Overview

SUD50N04-8M8P-4BE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, with R_DS(on) = 0.0088 Ω at V_GS = 10 V and 50 A continuous drain current (T_C = 25 °C), optimized for PWM switching in DC/DC converters and LCD backlight inverters using TO-252 surface-mount packaging.

For engineers reviewing the SUD50N04-8M8P-4BE3 datasheet, SUD50N04-8M8P-4BE3 pinout, SUD50N04-8M8P-4BE3 application, or SUD50N04-8M8P-4BE3 equivalent, key selection criteria include its 16 nC total gate charge at 4.5 V drive, 0.81–1.2 V body diode forward voltage at 10 A, and junction-to-case thermal resistance of 2.1 °C/W - critical for thermally constrained high-current switching designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its 100 % UIS-tested ruggedness supports reliable operation under unclamped inductive switching stress, while 100 % R_g testing ensures gate resistance consistency between 2.5 Ω and 8.5 Ω.

The device features a drain-connected tab for direct thermal coupling to PCB copper or heatsinks, and its gate threshold voltage (1.5–3.0 V) enables compatibility with both 3.3 V and 5 V logic-level drivers. Body diode reverse recovery time is specified at 22–35 ns under 100 A/µs dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage for low-voltage DC/DC and backlight inverter primary-side switches
R_DS(on)	0.0088 Ω @ V_GS = 10 V - enables <1 W conduction loss at 30 A, reducing thermal load in compact layouts
Q_g	16 nC @ V_GS = 4.5 V - supports efficient 3.3 V gate drive with low switching energy and reduced driver IC stress
I_D (cont.)	50 A @ T_C = 25 °C - package-limited current rating suitable for high-current synchronous rectification
R_thJC	2.1 °C/W - allows >20 W power dissipation with modest heatsinking, critical for sustained PWM duty cycles
V_SD	0.81–1.2 V @ I_S = 10 A - low body diode forward drop improves efficiency in freewheeling and bidirectional topologies
t_rr	22–35 ns - fast body diode recovery minimizes switching losses and EMI in hard-switched converters

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires ≤8.5 Ω gate resistance to limit ringing and ensure stable turn-on/turn-off
S (Source)	Reference node	Common return path for load current and gate drive; must be low-inductance layout to minimize shoot-through risk
D (Drain)	Power output	Connected internally to exposed metal tab; electrically and thermally coupled to PCB copper or external heatsink

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for space-constrained 40 V switch applications
100 % UIS tested	Guarantees robustness against inductive energy spikes without external snubbers in motor or converter flyback phases
PWM-optimized switching	Low Q_gd/Q_g ratio (4.5/16 nC) reduces Miller plateau duration and improves controllability at high frequencies
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and consumer end equipment

Applications

LCD Display Backlight Inverter	DC/DC Converter Primary Switch
Use Scenario: High-frequency resonant inverter driving CCFL or LED strings in notebook and monitor displays. IC Role / Device Role / Timing Role: Main switching FET in half-bridge topology, operating at 50–200 kHz with zero-voltage switching assist. Use Value: Low R_DS(on) and fast t_rr reduce conduction and switching losses, enabling >90 % inverter efficiency at full brightness.	Use Scenario: Synchronous buck converter delivering 5–12 V at up to 30 A for FPGA or SoC core rails. IC Role / Device Role / Timing Role: High-side power switch controlled by dedicated gate driver with adaptive dead-time management. Use Value: 16 nC Q_g at 4.5 V enables direct drive from 3.3 V microcontroller GPIO, eliminating level-shifter complexity.
Motor Drive Half-Bridge Leg	Hot-Swap ORing Controller
Use Scenario: 24 V BLDC motor control in industrial actuators, requiring bidirectional current handling and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, conducting continuous 44 A at T_C = 70 °C. Use Value: 0.0105 Ω R_DS(on) @ 4.5 V ensures minimal I²R heating during high-duty-cycle commutation.	Use Scenario: Redundant 12 V power supply ORing in telecom shelf systems with automatic fault isolation. IC Role / Device Role / Timing Role: Active ORing FET replacing Schottky diodes to reduce forward drop and improve thermal margin. Use Value: Body diode V_SD ≤ 1.2 V and fast t_rr prevent reverse recovery shoot-through during supply switchover events.

LCD Display Backlight Inverter

DC/DC Converter Primary Switch

Use Scenario: High-frequency resonant inverter driving CCFL or LED strings in notebook and monitor displays.

IC Role / Device Role / Timing Role: Main switching FET in half-bridge topology, operating at 50–200 kHz with zero-voltage switching assist.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and switching losses, enabling >90 % inverter efficiency at full brightness.

Use Scenario: Synchronous buck converter delivering 5–12 V at up to 30 A for FPGA or SoC core rails.

IC Role / Device Role / Timing Role: High-side power switch controlled by dedicated gate driver with adaptive dead-time management.

Use Value: 16 nC Q_g at 4.5 V enables direct drive from 3.3 V microcontroller GPIO, eliminating level-shifter complexity.

Motor Drive Half-Bridge Leg

Hot-Swap ORing Controller

Use Scenario: 24 V BLDC motor control in industrial actuators, requiring bidirectional current handling and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, conducting continuous 44 A at T_C = 70 °C.

Use Value: 0.0105 Ω R_DS(on) @ 4.5 V ensures minimal I²R heating during high-duty-cycle commutation.

Use Scenario: Redundant 12 V power supply ORing in telecom shelf systems with automatic fault isolation.

IC Role / Device Role / Timing Role: Active ORing FET replacing Schottky diodes to reduce forward drop and improve thermal margin.

Use Value: Body diode V_SD ≤ 1.2 V and fast t_rr prevent reverse recovery shoot-through during supply switchover events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL540NPBF	R_DS(on) = 0.044 Ω @ 10 V; higher on-resistance, lower Q_g (16 nC same), TO-220 package	Requires heatsink; unsuitable for space-constrained surface-mount designs	Select when board-level thermal mass is available and leaded assembly is preferred
DMN4034LSD-13	R_DS(on) = 0.0075 Ω @ 10 V; smaller TSOP-6 package, lower I_D (12 A) and P_D (1.9 W)	Limited to low-power DC/DC; cannot sustain 50 A continuous due to package thermal limits	Select for compact point-of-load regulators where peak current ≤ 12 A

Compared with IRL540NPBF and DMN4034LSD-13, the SUD50N04-8M8P-4BE3 uniquely balances high current capability (50 A), low R_DS(on), and surface-mount TO-252 thermal performance - making it optimal for medium-power industrial and display power stages where both density and thermal headroom matter.

Availability

SUD50N04-8M8P-4BE3 is available at Aetrix Electronics and suitable for LCD backlight inverters, DC/DC converters, and motor drive half-bridge circuits requiring stable component supply across extended production lifecycles.

Supply support for SUD50N04-8M8P-4BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and ruggedness.

The SUD50N04-8M8P-4BE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-current switching in industrial power supplies, lighting, and motor control where low on-resistance and fast switching are essential.

FAQ

What is the maximum continuous drain current rating for the SUD50N04-8M8P-4BE3 at 70 °C case temperature?

The SUD50N04-8M8P-4BE3 supports 44 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-252 package under real-world PCB thermal conditions and must be validated against actual board layout and copper area per Application Note 826.

Does the SUD50N04-8M8P-4BE3 have a guaranteed gate threshold voltage range?

Yes, the SUD50N04-8M8P-4BE3 has a guaranteed V_GS(th) range of 1.5 V to 3.0 V at T_J = 25 °C and I_D = 250 µA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, though system-level validation at worst-case temperature and voltage is recommended for safety-critical designs.

Is the SUD50N04-8M8P-4BE3 suitable for use in synchronous rectification topologies?

Yes, the SUD50N04-8M8P-4BE3 is well-suited for synchronous rectification due to its low R_DS(on) (0.0088 Ω), fast body diode recovery (t_rr = 22–35 ns), and low Q_rr (14–25 nC). These characteristics reduce conduction loss and minimize reverse recovery-related losses compared to Schottky diodes in 12–24 V output stages.

What is the thermal resistance from junction to ambient for the SUD50N04-8M8P-4BE3 on a standard FR4 board?

The SUD50N04-8M8P-4BE3 has a maximum R_thJA of 40 °C/W when mounted on a 1" × 1" FR4 board, as stated in the Thermal Resistance Ratings table. Actual performance depends heavily on PCB copper area, layer count, and airflow; Vishay recommends following their DPAK pad layout guidelines (Application Note 826) to approach the typical 32 °C/W value.

How is the SUD50N04-8M8P-4BE3 marked for traceability and compliance?

The SUD50N04-8M8P-4BE3 carries "-4BE3" suffix indicating lead (Pb)-free and halogen-free construction per IEC 61249-2-21 and RoHS Directive 2002/95/EC. Marking includes Vishay logo, part number variant, date code, and factory code (Y or N per Package Information Doc #71197), ensuring full supply chain traceability and regulatory compliance.

SUD50N04-8M8P-4BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 48.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50N04-8M8P-4BE3 FAQ

1.How can I place an order for SUD50N04-8M8P-4BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N04-8M8P-4BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N04-8M8P-4BE3 reliable?

The price and inventory of SUD50N04-8M8P-4BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N04-8M8P-4BE3 is usually 5 days.

3.What payment methods are accepted for SUD50N04-8M8P-4BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N04-8M8P-4BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N04-8M8P-4BE3?

SUD50N04-8M8P-4BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N04-8M8P-4BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N04-8M8P-4BE3?

For technical support, including SUD50N04-8M8P-4BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N04-8M8P-4BE3 requirements.

6.How does Aetrix verify that SUD50N04-8M8P-4BE3 is sourced from the original manufacturer or authorized distributors?

All SUD50N04-8M8P-4BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N04-8M8P-4BE3 meets industry standards.

7.What is the process for return or replacement of SUD50N04-8M8P-4BE3?

All SUD50N04-8M8P-4BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N04-8M8P-4BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N04-8M8P-4BE3 part is unused and in its original packaging.

Return procedure for SUD50N04-8M8P-4BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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