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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N06-09L-E3

Name: SUD50N06-09L-E3
Brand: Vishay Siliconix
SKU: SUD50N06-09L-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N06-09L-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N06-09L-E3.pdf

Description:: MOSFET N-CH 60V 50A TO252

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Product details

Overview

SUD50N06-09L-E3 from Vishay Siliconix is an N-channel 60 V, logic-level TrenchFET® Power MOSFET in TO-252 package, rated for 50 A continuous drain current at 175 °C junction temperature, with R_DS(on) = 0.0093 Ω at V_GS = 10 V and 0.0122 Ω at V_GS = 4.5 V, used in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SUD50N06-09L-E3 datasheet, SUD50N06-09L-E3 pinout, SUD50N06-09L-E3 application, or SUD50N06-09L-E3 equivalent, key selection criteria include its 175 °C thermal rating, low gate charge (Q_g = 47–70 nC), integrated source-drain diode with t_rr = 45–100 ns, and TO-252 thermal resistance (R_thJC = 0.85 °C/W typical).

Technical Context

This device employs Vishay's TrenchFET® process to achieve low R_DS(on) and fast switching with logic-level gate drive compatibility (V_GS(th) = 1–3 V). Its 60 V V_DS rating supports 48 V industrial bus and 24 V automotive subsystems, while the 175 °C TJ max enables operation in sealed enclosures without forced cooling.

The MOSFET integrates a robust body diode with I_SM = 100 A pulsed source current and V_SD = 1.0–1.5 V at 20 A, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V nominal input rails with 20 % margin for transients
R_DS(on) @ 10 V	0.0093 Ω - Enables ≤ 9.3 W conduction loss at 100 A (derated)
R_DS(on) @ 4.5 V	0.0122 Ω - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIO
Q_g	47–70 nC - Reduces gate drive power and enables >500 kHz switching in SMPS
t_r/t_f	15–25 ns / 20–30 ns - Minimizes switching transition losses in hard-switched topologies
T_J max	175 °C - Allows operation in high-ambient environments without derating below 100 °C ambient
C_iss	2650 pF - Predictable Miller effect for gate driver sizing and EMI filtering

Pinout & Package

TO-252AA (DPAK) surface-mount package with drain connected to exposed tab for direct heatsinking; 3-pin configuration optimized for high-current PCB layouts with minimal thermal resistance (R_thJC = 0.85 °C/W typical).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Logic-level control input; requires <100 nA leakage; drives 47–70 nC total gate charge
S	Source	Power return node; tied to ground or low-side switch reference; carries full load current
D	Drain	Main power output node; connected internally to exposed copper tab for thermal and electrical conduction

Key Features

Feature	Design Value
175 °C Junction Temperature Rating	Enables reliable operation in sealed industrial enclosures and under-hood automotive locations without active cooling
TrenchFET® Process Technology	Delivers lowest R_DS(on) per die area, reducing footprint and thermal mass vs. planar MOSFETs
Low Q_gd/Q_g Ratio (≈0.26)	Improves hard-switching efficiency and reduces voltage overshoot during turn-off
Integrated Source-Drain Diode	Supports bidirectional current flow with t_rr = 45–100 ns, eliminating need for external freewheeling diode in many topologies
Lead (Pb)-free and RoHS-compliant	Fulfills global environmental compliance requirements without performance trade-offs

Applications

DC-DC Buck Converters	Brushless DC Motor Drivers
Use Scenario: 48 V input to 12 V/20 A output step-down converter in telecom power shelf. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET, switching at 300 kHz with 4.5 V gate drive from controller IC. Use Value: R_DS(on) = 0.0122 Ω at 4.5 V ensures <3 W conduction loss at full load, improving system efficiency by ≥1.2 % over standard 10 V gate devices.	Use Scenario: Low-side switch in three-phase BLDC inverter for HVAC fan module. IC Role / Device Role / Timing Role: Phase-leg low-side power switch, conducting 50 A continuous with 100 A peak pulse capability. Use Value: 175 °C TJ rating allows sustained 50 A operation at 105 °C ambient without thermal shutdown, supporting compact mechanical design.
Industrial PLC Output Modules	LED Constant-Current Drivers
Use Scenario: Solid-state relay replacement in 24 V DC digital output card driving solenoid loads. IC Role / Device Role / Timing Role: Load switch with integrated protection; controlled via isolated 3.3 V logic signal. Use Value: Logic-level threshold (1–3 V) guarantees turn-on with standard optocoupler outputs; avalanche energy rating (E_AS = 125 mJ) absorbs inductive kickback.	Use Scenario: Dimmable constant-current LED driver for street lighting (40 V string, 1.5 A). IC Role / Device Role / Timing Role: PWM-controlled current sink in linear+PWM hybrid topology. Use Value: Low R_DS(on) minimizes dropout voltage (<90 mV at 1.5 A), preserving headroom for wide-input-range operation across 36–57 V.

DC-DC Buck Converters

Brushless DC Motor Drivers

Use Scenario: 48 V input to 12 V/20 A output step-down converter in telecom power shelf.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET, switching at 300 kHz with 4.5 V gate drive from controller IC.

Use Value: R_DS(on) = 0.0122 Ω at 4.5 V ensures <3 W conduction loss at full load, improving system efficiency by ≥1.2 % over standard 10 V gate devices.

Use Scenario: Low-side switch in three-phase BLDC inverter for HVAC fan module.

IC Role / Device Role / Timing Role: Phase-leg low-side power switch, conducting 50 A continuous with 100 A peak pulse capability.

Use Value: 175 °C TJ rating allows sustained 50 A operation at 105 °C ambient without thermal shutdown, supporting compact mechanical design.

Industrial PLC Output Modules

LED Constant-Current Drivers

Use Scenario: Solid-state relay replacement in 24 V DC digital output card driving solenoid loads.

IC Role / Device Role / Timing Role: Load switch with integrated protection; controlled via isolated 3.3 V logic signal.

Use Value: Logic-level threshold (1–3 V) guarantees turn-on with standard optocoupler outputs; avalanche energy rating (E_AS = 125 mJ) absorbs inductive kickback.

Use Scenario: Dimmable constant-current LED driver for street lighting (40 V string, 1.5 A).

IC Role / Device Role / Timing Role: PWM-controlled current sink in linear+PWM hybrid topology.

Use Value: Low R_DS(on) minimizes dropout voltage (<90 mV at 1.5 A), preserving headroom for wide-input-range operation across 36–57 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V; TO-220 package; no logic-level drive (V_GS(th) = 2–4 V)	Higher conduction loss; requires higher gate voltage for full enhancement; larger thermal footprint	Select when legacy TO-220 mounting is required and gate drive ≥10 V is available
STP55NF06L	R_DS(on) = 0.014 Ω @ 4.5 V; TO-220 package; same 175 °C rating	Larger package increases board space and thermal resistance (R_thJC ≈ 1.5 °C/W)	Choose if higher single-pulse avalanche energy (E_AS = 220 mJ) is critical for inductive load protection

Compared with IRFZ44NPBF and STP55NF06L, the SUD50N06-09L-E3 delivers superior thermal performance in surface-mount form factor, lower gate charge for high-frequency operation, and guaranteed logic-level turn-on down to 4.5 V - making it optimal for space-constrained, high-efficiency, and microcontroller-driven designs.

Availability

SUD50N06-09L-E3 is available at Aetrix Electronics and suitable for industrial motor control, telecom power conversion, and automotive body electronics requiring stable component supply and long-term manufacturability.

Supply support for SUD50N06-09L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SUD50N06-09L-E3 belongs to Vishay's TrenchFET® logic-level MOSFET product line, engineered for high-current, high-temperature switching in space-constrained power systems where low gate drive voltage and thermal robustness are essential.

FAQ

What is the maximum continuous drain current for SUD50N06-09L-E3 at 100 °C case temperature?

The SUD50N06-09L-E3 supports 50 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is maintained up to 175 °C junction temperature, enabled by its low R_thJC of 0.85 °C/W typical and robust TrenchFET® silicon process. Derating is not required between 25 °C and 100 °C case temperature.

Does SUD50N06-09L-E3 have avalanche capability, and what is its rated single-pulse energy?

Yes, the SUD50N06-09L-E3 is rated for single-pulse avalanche energy of 125 mJ with L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. This capability allows safe operation during inductive load switching events such as motor commutation or relay de-energization without external snubbers in many applications.

Is SUD50N06-09L-E3 compatible with 3.3 V microcontroller GPIO for direct gate drive?

The SUD50N06-09L-E3 has a gate threshold voltage V_GS(th) of 1–3 V and R_DS(on) = 0.0122 Ω at V_GS = 4.5 V, confirming full enhancement with 3.3 V logic is marginal but usable in low-current or thermally relaxed conditions. For robust 50 A operation, 4.5 V or higher gate drive is recommended per datasheet characterization.

What is the thermal resistance from junction to case (R_thJC) for SUD50N06-09L-E3, and how does it impact heatsink design?

The SUD50N06-09L-E3 has a typical R_thJC of 0.85 °C/W and maximum of 1.1 °C/W. This low value-enabled by the TO-252 drain-connected tab-means a modest heatsink (e.g., 1.5 °C/W) can maintain T_J < 125 °C at 50 A continuous, simplifying thermal management versus TO-220 alternatives with R_thJC > 1.5 °C/W.

How does the source-drain diode performance of SUD50N06-09L-E3 compare to discrete Schottky diodes in synchronous rectification?

The SUD50N06-09L-E3 features a source-drain diode with V_SD = 1.0–1.5 V at 20 A and t_rr = 45–100 ns. While forward voltage is higher than Schottky diodes (~0.5 V), its integration eliminates layout complexity and parasitic inductance, and its controlled recovery supports reliable operation in non-resonant synchronous buck converters up to 300 kHz.

SUD50N06-09L-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50N06-09L-E3 FAQ

1.How can I place an order for SUD50N06-09L-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N06-09L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N06-09L-E3 reliable?

The price and inventory of SUD50N06-09L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N06-09L-E3 is usually 5 days.

3.What payment methods are accepted for SUD50N06-09L-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N06-09L-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N06-09L-E3?

SUD50N06-09L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N06-09L-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N06-09L-E3?

For technical support, including SUD50N06-09L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N06-09L-E3 requirements.

6.How does Aetrix verify that SUD50N06-09L-E3 is sourced from the original manufacturer or authorized distributors?

All SUD50N06-09L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N06-09L-E3 meets industry standards.

7.What is the process for return or replacement of SUD50N06-09L-E3?

All SUD50N06-09L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N06-09L-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N06-09L-E3 part is unused and in its original packaging.

Return procedure for SUD50N06-09L-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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