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Vishay Siliconix SUD50P04-08-BE3
- Part No.:
- SUD50P04-08-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD50P04-08-BE3.pdf
- Description:
- MOSFET P-CH 40V 50A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,400
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Product details
Overview
SUD50P04-08-BE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -40 V drain-source voltage, 0.013 Ω rDS(on) at VGS = -10 V, and -60 A continuous drain current at TC = 25 °C in TO-252 (DPAK) package. It operates up to 175 °C junction temperature and is used in high-efficiency DC-DC converters and reverse-polarity protection circuits.
For engineers reviewing the SUD50P04-08-BE3 datasheet, SUD50P04-08-BE3 pinout, SUD50P04-08-BE3 application, or SUD50P04-08-BE3 equivalent, key selection criteria include its -40 V VDS rating, low 0.013 Ω on-resistance at -10 V gate drive, 175 °C TJ max, TO-252 thermal performance, and body diode forward voltage of -1.0 V at -50 A.
Technical Context
This device uses trench-gate silicon technology to achieve low rDS(on) and high current density in a surface-mount DPAK package. Its gate threshold voltage range (-1.0 V to -3.0 V) enables robust turn-on control with standard logic-level or microcontroller-driven gate drivers.
The MOSFET supports avalanche energy of 80 mJ and features a drain-connected tab for enhanced thermal conduction. Its SOA is limited by both rDS(on) and package thermal resistance (RthJC = 1.3 °C/W typ), with pulsed drain current rated at -100 A under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage in reverse-polarity or high-side switch configurations |
| rDS(on) | 0.013 Ω at VGS = -10 V, ID = -30 A - Enables <1.3 W conduction loss at 50 A in optimized thermal layout |
| ID (cont) | -60 A at TC = 25 °C - Supports high-current load switching with external heatsinking |
| TJ max | 175 °C - Allows operation in under-hood automotive or industrial ambient environments |
| Qg | 63–95 nC - Determines gate driver power requirement and switching speed in hard-switched topologies |
| VSD | -1.0 to -1.5 V at IF = -50 A - Defines forward conduction loss and recovery behavior in synchronous rectification |
| RthJC | 1.3 °C/W (typ) - Enables direct thermal path from die to PCB copper or heatsink via drain tab |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, drain-connected tab for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Source (S) | Current return path for P-channel conduction | Connected to system ground or higher potential node in high-side configuration |
| Gate (G) | Control electrode for channel formation | Requires negative voltage relative to source to turn on; compatible with standard gate drivers |
| Drain (D) | Main current-carrying terminal, tied to tab | Electrically and thermally connected to PCB copper pour or heatsink for power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.013 Ω rDS(on) in TO-252, enabling higher current density than planar MOSFETs |
| 175 °C maximum junction temperature | Supports reliable operation in sealed enclosures or high-ambient industrial environments |
| Drain-connected tab | Reduces thermal resistance to PCB by ~1.3 °C/W, improving power handling without added heatsinks |
| 80 mJ single-pulse avalanche energy | Withstands inductive turn-off transients in motor drives and solenoid controls without clamping |
| Low Qgd / Qg ratio (16/63 nC) | Improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
Applications
| Automotive Reverse-Polarity Protection | Industrial DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Installed between battery input and main system rail to block reverse battery connection. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement with active gate control. Use Value: Eliminates 0.7 V diode drop, reducing power loss and heat generation while supporting 60 A continuous load. | Use Scenario: Used in non-isolated buck converter upper switch for 12 V to 5 V conversion in PLC modules. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 200 kHz with gate-driven turn-on. Use Value: 0.013 Ω rDS(on) limits conduction loss to <1.3 W at 50 A, improving efficiency over discrete diode solutions. |
| Hot-Swap Controller Back-End Switch | Motor Drive Brake Circuit |
Use Scenario: Placed downstream of hot-swap IC to limit inrush and provide fault isolation in server power supplies. IC Role / Device Role / Timing Role: Load switch controlled by dedicated hot-swap controller for soft-start and overcurrent shutdown. Use Value: 100 A pulsed rating handles capacitor charging surges; 175 °C TJ allows sustained operation during fault events. | Use Scenario: Connected across motor terminals to dissipate kinetic energy during dynamic braking in 24 V DC motors. IC Role / Device Role / Timing Role: Active clamp switch activated during PWM off-time to recirculate current through body diode and channel. Use Value: Body diode VSD of -1.0 V minimizes voltage overshoot; 80 mJ avalanche rating absorbs stored inductive energy safely. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | rDS(on) = 0.02 Ω @ -10 V; TO-220 package; RthJC = 2.0 °C/W | Higher thermal resistance and larger footprint; less suitable for space-constrained PCBs | Prefer when through-hole mounting and higher avalanche margin (110 mJ) are prioritized over size and thermal efficiency |
| DMT4005LPS-13 | rDS(on) = 0.0045 Ω @ -10 V; PowerSO-8 package; TJ max = 150 °C | Lower on-resistance but lower temperature rating and smaller current capability (-42 A) | Choose for ultra-low-loss, low-power applications where 150 °C max junction temperature is acceptable |
Compared with IRF4905PbF and DMT4005LPS-13, the SUD50P04-08-BE3 delivers optimal balance of low rDS(on), high-temperature operation, and compact TO-252 packaging-making it especially suitable for automotive and industrial systems requiring robust thermal performance in surface-mount layouts.
Availability
SUD50P04-08-BE3 is available at Aetrix Electronics and suitable for automotive reverse-polarity protection, industrial DC-DC converter high-side switching, and motor drive brake circuits requiring stable component supply and long-term production continuity.
Supply support for SUD50P04-08-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and power efficiency.
The SUD50P04-08-BE3 belongs to Vishay's TrenchFET® P-channel power MOSFET family, engineered for high-current, high-temperature switching in automotive, industrial, and computing power systems.
FAQ
What is the maximum continuous drain current rating for SUD50P04-08-BE3 at 100 °C case temperature?
The SUD50P04-08-BE3 supports -43 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the 175 °C maximum junction temperature specification. Designers must verify PCB copper area and airflow to maintain TC ≤ 100 °C under full load.
Does SUD50P04-08-BE3 have lead-free construction and RoHS compliance?
Yes, the SUD50P04-08-BE3 is lead-free and RoHS compliant, as confirmed by Vishay's ordering designation "-BE3" suffix and documentation (Document Number 73009). The device meets EU RoHS Directive 2011/65/EU and is suitable for environmentally regulated industrial and automotive applications.
What is the gate threshold voltage range for SUD50P04-08-BE3, and how does it affect drive requirements?
The SUD50P04-08-BE3 has a gate threshold voltage (VGS(th)) range of -1.0 V to -3.0 V at TJ = 25 °C. This wide range ensures reliable turn-on with gate drive voltages ≥ -4.5 V, making it compatible with standard microcontroller GPIOs and dedicated gate drivers. Full enhancement occurs at -10 V, where rDS(on) reaches its specified 0.013 Ω value.
Can SUD50P04-08-BE3 be used in avalanche-rated applications, and what is its rated energy?
Yes, the SUD50P04-08-BE3 is characterized for single-pulse avalanche operation with an energy rating of 80 mJ (IAS = -40 A, L = 0.1 mH). This makes it suitable for inductive load switching in motor controls and solenoid drivers where unclamped inductive kickback may occur. Operation beyond this rating requires external snubbing or clamping.
How does the drain-connected tab of SUD50P04-08-BE3 impact PCB layout and thermal design?
Because the drain terminal is electrically and thermally connected to the exposed tab in the TO-252 package, the SUD50P04-08-BE3 requires the tab to be soldered to a large copper pour or thermal pad on the PCB. This connection provides the primary thermal path (RthJC = 1.3 °C/W typ) and must be isolated from other nets unless drain is referenced to system ground. Proper stencil design and solder volume are critical for mechanical and thermal reliability.
SUD50P04-08-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SUD50P04-08-BE3 FAQ
1.How can I place an order for SUD50P04-08-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD50P04-08-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD50P04-08-BE3 reliable?
The price and inventory of SUD50P04-08-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50P04-08-BE3 is usually 5 days.
3.What payment methods are accepted for SUD50P04-08-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50P04-08-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD50P04-08-BE3?
SUD50P04-08-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD50P04-08-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD50P04-08-BE3?
For technical support, including SUD50P04-08-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50P04-08-BE3 requirements.
6.How does Aetrix verify that SUD50P04-08-BE3 is sourced from the original manufacturer or authorized distributors?
All SUD50P04-08-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50P04-08-BE3 meets industry standards.
7.What is the process for return or replacement of SUD50P04-08-BE3?
All SUD50P04-08-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50P04-08-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD50P04-08-BE3 part is unused and in its original packaging.
Return procedure for SUD50P04-08-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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