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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50P04-08-GE3

Name: SUD50P04-08-GE3
Brand: Vishay Siliconix
SKU: SUD50P04-08-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50P04-08-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50P04-08-GE3.pdf

Description:: MOSFET P-CH 40V 50A TO252

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Product details

Overview

SUD50P04-08-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -40 V drain-source voltage, 0.0081 Ω R_DS(on) at V_GS = -10 V, -50 A continuous drain current (T_J = 150 °C), and housed in a TO-252 (DPAK) package with drain-connected tab. It serves as a high-current load switch in DC/DC converters and power distribution systems.

For engineers reviewing the SUD50P04-08-GE3 datasheet, SUD50P04-08-GE3 pinout, SUD50P04-08-GE3 application, or SUD50P04-08-GE3 equivalent, key selection criteria include its low on-resistance at -4.5 V gate drive, 106 nC total gate charge, avalanche energy rating of 106 mJ, and thermal resistance of 1.7 °C/W junction-to-case - critical for high-efficiency, thermally constrained power switching designs.

Technical Context

This device employs trench-gate silicon technology to achieve enhanced conduction efficiency and robust unclamped inductive switching (UIS) performance. Its gate threshold voltage range (-1 V to -2.5 V) enables reliable turn-on with standard logic-level negative gate drive, while the integrated body diode supports synchronous rectification and freewheeling paths.

The SUD50P04-08-GE3 operates within a -55 °C to +150 °C junction temperature range and features 100 % R_g and UIS testing per production lot. Its SOA curve defines safe operation under pulsed conditions up to -100 A, with voltage derating governed by thermal limits and package constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for high-side or reverse-polarity protection circuits
R_DS(on)	0.0081 Ω at V_GS = -10 V - Enables <1 W conduction loss at 32 A, critical for high-current load switching
I_D (cont)	-50 A at T_C = 25 °C - Supports high-power rail switching without forced cooling when mounted on adequate copper area
Q_g	106 nC (V_GS = -10 V) - Determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	106 mJ - Specifies single-pulse avalanche energy handling capability for inductive load interruption
R_thJC	1.7 °C/W - Enables accurate junction temperature estimation from case temperature in thermal design
V_GS(th)	-1.0 to -2.5 V - Ensures predictable turn-on behavior with standard -5 V or -10 V gate control rails

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for direct thermal coupling to PCB copper pour or heatsink. Dimensions per Vishay Doc #71197 (Rev. 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal, electrically connected to exposed metal tab	Primary thermal and electrical interface - must be soldered to ≥1"² FR-4 copper for rated 73.5 W dissipation
Gate	Control input for channel conduction	Low-impedance input requiring <3.6 Ω gate resistance to limit ringing; sensitive to ESD (±20 V max)
Source	Reference node for gate drive and current return path	Common connection point for load return and gate drive reference; determines V_GS bias relative to load ground

Key Features

Feature	Design Value
TrenchFET® construction	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling compact high-current switches
100 % R_g and UIS tested	Ensures gate resistance consistency and verified avalanche ruggedness for reliability-critical power stages
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, suitable for environmentally regulated end equipment
Drain-connected tab	Provides low-inductance, low-thermal-resistance path to PCB thermal plane - essential for high-frequency switching stability
Enhanced body diode recovery	35 ns typical reverse recovery time (t_rr) and 33 nC Q_rr support efficient freewheeling in buck and synchronous rectifier applications

Applications

High-Side Load Switch	DC/DC Buck Converter High-Side Switch
Use Scenario: Controlling power delivery to a 12 V automotive subsystem (e.g., infotainment module) with reverse-polarity and overcurrent protection. IC Role / Device Role / Timing Role: P-channel high-side switch operating in linear or saturated mode, controlled by microcontroller GPIO with level-shifting. Use Value: Low 0.0081 Ω R_DS(on) minimizes voltage drop and heat generation during sustained 30 A loads, extending system uptime.	Use Scenario: High-efficiency 40 V input to 5 V/10 A output buck converter in industrial PLC power supply. IC Role / Device Role / Timing Role: Primary high-side switching element in non-synchronous topology, switching at 250 kHz with 50 ns fall time. Use Value: 106 mJ E_AS withstands inductive kickback during MOSFET turn-off, eliminating need for external snubbers.
Hot-Swap Controller Back-End Switch	Reverse-Polarity Protection Circuit
Use Scenario: In-rush current limiting and fault isolation for hot-pluggable 24 V server backplane cards. IC Role / Device Role / Timing Role: Main pass transistor in discrete hot-swap circuit, driven by dedicated controller IC with current sensing. Use Value: -50 A continuous rating and 1.7 °C/W R_thJC allow full-load operation with minimal thermal margin on standard 2 oz copper.	Use Scenario: Protecting downstream 40 V-rated DC power supplies from accidental reverse battery connection in telecom equipment. IC Role / Device Role / Timing Role: Series-blocking element placed between input connector and system rail, conducting only when polarity is correct. Use Value: -40 V V_DS rating exceeds typical 28 V nominal systems, providing 43 % voltage headroom for transients and surges.

High-Side Load Switch

DC/DC Buck Converter High-Side Switch

Use Scenario: Controlling power delivery to a 12 V automotive subsystem (e.g., infotainment module) with reverse-polarity and overcurrent protection.

IC Role / Device Role / Timing Role: P-channel high-side switch operating in linear or saturated mode, controlled by microcontroller GPIO with level-shifting.

Use Value: Low 0.0081 Ω R_DS(on) minimizes voltage drop and heat generation during sustained 30 A loads, extending system uptime.

Use Scenario: High-efficiency 40 V input to 5 V/10 A output buck converter in industrial PLC power supply.

IC Role / Device Role / Timing Role: Primary high-side switching element in non-synchronous topology, switching at 250 kHz with 50 ns fall time.

Use Value: 106 mJ E_AS withstands inductive kickback during MOSFET turn-off, eliminating need for external snubbers.

Hot-Swap Controller Back-End Switch

Reverse-Polarity Protection Circuit

Use Scenario: In-rush current limiting and fault isolation for hot-pluggable 24 V server backplane cards.

IC Role / Device Role / Timing Role: Main pass transistor in discrete hot-swap circuit, driven by dedicated controller IC with current sensing.

Use Value: -50 A continuous rating and 1.7 °C/W R_thJC allow full-load operation with minimal thermal margin on standard 2 oz copper.

Use Scenario: Protecting downstream 40 V-rated DC power supplies from accidental reverse battery connection in telecom equipment.

IC Role / Device Role / Timing Role: Series-blocking element placed between input connector and system rail, conducting only when polarity is correct.

Use Value: -40 V V_DS rating exceeds typical 28 V nominal systems, providing 43 % voltage headroom for transients and surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω @ -10 V; higher 0.02 Ω vs. SUD50P04-08-GE3's 0.0081 Ω; TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 2.5 °C/W); less suitable for space-constrained PCBs	Select when legacy TO-220 mounting is required and 2.5× higher conduction loss is acceptable.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; much higher on-resistance; SOT-23 package; I_D = -4.2 A	Only suitable for sub-5 A loads; lacks avalanche rating and thermal capacity for power switching	Choose only for ultra-low-power, low-current bias or signal switching where TO-252 is impractical.

Compared with IRF4905PBF and DMG2305UVT-7, the SUD50P04-08-GE3 delivers superior conduction efficiency and thermal performance in TO-252 form factor, making it optimal for 20–50 A load switching where board space and thermal management are critical.

Availability

SUD50P04-08-GE3 is available at Aetrix Electronics and suitable for high-current load switching, DC/DC converter high-side switching, and reverse-polarity protection applications requiring stable component supply and long-term industrial availability.

Supply support for SUD50P04-08-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SUD50P04-08-GE3 belongs to Vishay's TrenchFET® P-channel portfolio, engineered for high-current, low-voltage power switching in automotive, industrial, and computing power supplies.

FAQ

What is the maximum continuous drain current rating for the SUD50P04-08-GE3 at 70 °C case temperature?

The SUD50P04-08-GE3 supports -50 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to its robust thermal design and TO-252 package construction. This value is confirmed in the Absolute Maximum Ratings table of Vishay Document #65594, and applies under proper PCB copper layout per Application Note 826.

Does the SUD50P04-08-GE3 have an avalanche-rated specification, and what is its value?

Yes, the SUD50P04-08-GE3 is fully specified for unclamped inductive switching: its single-pulse avalanche energy (E_AS) is 106 mJ at T_J = 25 °C with L = 0.1 mH. This rating is 100 % production-tested per datasheet Section 1, enabling use in circuits with significant inductive energy without external clamping.

What is the gate threshold voltage range for the SUD50P04-08-GE3, and how does it affect drive requirements?

The SUD50P04-08-GE3 has a gate threshold voltage (V_GS(th)) range of -1.0 V to -2.5 V at I_D = -250 μA. This ensures reliable turn-on with common -5 V or -10 V gate drive rails, and allows logic-compatible control when paired with simple inverting level shifters - no specialized high-side drivers needed.

Can the SUD50P04-08-GE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, the SUD50P04-08-GE3 is suitable for synchronous rectification due to its fast, low-loss body diode: typical reverse recovery time (t_rr) is 35 ns, Q_rr is 33 nC, and forward voltage (V_SD) is -0.8 V at -10 A. These values reduce switching losses and improve efficiency compared to Schottky alternatives in 40 V-class buck converters.

Is the SUD50P04-08-GE3 compliant with lead-free and halogen-free standards?

Yes, the SUD50P04-08-GE3 is explicitly marked "lead (Pb)-free and halogen-free" in its ordering information and complies with RoHS Directive 2011/65/EU and JEDEC JS709B. This is documented in Vishay's S14-2535-Rev. B datasheet and confirmed via material categorization per Doc #99912.

SUD50P04-08-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.1mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 159 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5380 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 73.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50P04-08-GE3 FAQ

1.How can I place an order for SUD50P04-08-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50P04-08-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50P04-08-GE3 reliable?

The price and inventory of SUD50P04-08-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50P04-08-GE3 is usually 5 days.

3.What payment methods are accepted for SUD50P04-08-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50P04-08-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50P04-08-GE3?

SUD50P04-08-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50P04-08-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50P04-08-GE3?

For technical support, including SUD50P04-08-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50P04-08-GE3 requirements.

6.How does Aetrix verify that SUD50P04-08-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD50P04-08-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50P04-08-GE3 meets industry standards.

7.What is the process for return or replacement of SUD50P04-08-GE3?

All SUD50P04-08-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50P04-08-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50P04-08-GE3 part is unused and in its original packaging.

Return procedure for SUD50P04-08-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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