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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50P04-13L-E3

Name: SUD50P04-13L-E3
Brand: Vishay Siliconix
SKU: SUD50P04-13L-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50P04-13L-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50P04-13L-E3.pdf

Description:: MOSFET P-CH 40V 60A TO252

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Product details

Overview

SUD50P04-13L-E3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -40 V drain-source voltage, 0.013 Ω on-resistance at -10 V gate drive, and -60 A continuous drain current at TC = 25 °C. It operates up to 175 °C junction temperature and features a TO-252 (DPAK) package with drain-connected tab, suited for high-current DC load switching in industrial power supplies.

For engineers reviewing the SUD50P04-13L-E3 datasheet, SUD50P04-13L-E3 pinout, SUD50P04-13L-E3 application, or SUD50P04-13L-E3 equivalent, key selection criteria include its -40 V V_DS, low r_DS(on) at -4.5 V gate drive, body diode recovery time (36–55 ns), thermal resistance (R_thJC = 1.3 °C/W), and RoHS-compliant lead-free construction.

Technical Context

This P-channel MOSFET uses trench-gate silicon technology to achieve low conduction loss and robust avalanche capability (80 mJ E_AS). Its gate threshold voltage range (-1.0 V to -3.0 V) enables reliable enhancement-mode turn-on with standard logic-level gate drivers.

The device supports high-pulse current operation (-100 A IDM) and integrates a fast, low-V_SD body diode (V_SD = -1.0 to -1.5 V at -50 A). Thermal design is enabled by its low R_thJC and specified steady-state R_thJA of 40–50 °C/W on FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage before avalanche breakdown
r_DS(on)	0.013 Ω @ V_GS = -10 V, I_D = -30 A - Enables <1.2 W conduction loss at 30 A
I_D (cont)	-60 A @ T_C = 25 °C - Requires heatsinking above ~43 A at 100 °C case temp
Q_g	63–95 nC - Determines gate driver power and switching speed in hard-switched topologies
R_thJC	1.3 °C/W (typ) - Allows ~72 W power dissipation with 100 °C ΔT from junction to case
T_J max	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments
V_GS(th)	-1.0 to -3.0 V - Ensures turn-on with -5 V logic or microcontroller GPIO without level shifting

Pinout & Package

Package: TO-252 (DPAK), surface-mount, drain-connected tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Current return path for P-channel conduction	Connected to higher potential rail; referenced for gate control
Gate (G)	Control electrode for channel formation	Requires negative voltage relative to source to turn on; high input capacitance (C_iss = 3120 pF)
Drain (D)	Main current output terminal	Internally tied to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower r_DS(on) per die area vs. planar MOSFETs, improving power density in space-constrained PCB layouts
175 °C maximum junction temperature	Enables use in thermally aggressive environments (e.g., motor drives, enclosed power modules) without derating at full current
80 mJ single-pulse avalanche energy (E_AS)	Provides ruggedness against inductive switching transients without external snubbers in relay or solenoid drive circuits
Low gate charge (Q_g = 63–95 nC)	Reduces gate driver losses and enables efficient 100+ kHz PWM operation in synchronous buck or reverse-buck converters
RoHS-compliant, lead-free (E3 suffix)	Meets global environmental compliance requirements for industrial and consumer end equipment without solderability compromise

Applications

Industrial DC Load Switching	High-Current Reverse Polarity Protection
Use Scenario: Controlling 48 V DC bus loads such as fans, pumps, and actuators in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: High-side P-channel switch enabling ON/OFF control via microcontroller GPIO with simple level translation. Use Value: Low r_DS(on) minimizes voltage drop and heat generation during sustained 30–50 A operation, reducing need for forced air cooling.	Use Scenario: Preventing damage from accidental battery reversal in 24–48 V portable test equipment and battery-powered instrumentation. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery positive and system input, conducting only when polarity is correct. Use Value: Fast body diode (t_rr = 36–55 ns) and low V_SD ensure minimal forward drop and no latch-up during polarity correction events.
Motor Drive Half-Bridge High-Side	Hot-Swap Controller Back-End Switch
Use Scenario: High-side switch in brushed DC motor H-bridge drivers for robotics and automated guided vehicles (AGVs). IC Role / Device Role / Timing Role: P-channel MOSFET used with gate driver IC to manage bidirectional current flow and regenerative braking energy. Use Value: Avalanche rating (IAS = -40 A, EAS = 80 mJ) absorbs inductive kickback during PWM commutation without external clamping.	Use Scenario: Power sequencing and fault isolation in modular server power distribution units (PDUs) and telecom line cards. IC Role / Device Role / Timing Role: Inrush-limited high-side switch activated after soft-start and pre-charge completion. Use Value: 175 °C TJ rating and stable r_DS(on) over temperature support long-term reliability under repeated hot-plug cycles.

Industrial DC Load Switching

High-Current Reverse Polarity Protection

Use Scenario: Controlling 48 V DC bus loads such as fans, pumps, and actuators in programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling ON/OFF control via microcontroller GPIO with simple level translation.

Use Value: Low r_DS(on) minimizes voltage drop and heat generation during sustained 30–50 A operation, reducing need for forced air cooling.

Use Scenario: Preventing damage from accidental battery reversal in 24–48 V portable test equipment and battery-powered instrumentation.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery positive and system input, conducting only when polarity is correct.

Use Value: Fast body diode (t_rr = 36–55 ns) and low V_SD ensure minimal forward drop and no latch-up during polarity correction events.

Motor Drive Half-Bridge High-Side

Hot-Swap Controller Back-End Switch

Use Scenario: High-side switch in brushed DC motor H-bridge drivers for robotics and automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: P-channel MOSFET used with gate driver IC to manage bidirectional current flow and regenerative braking energy.

Use Value: Avalanche rating (IAS = -40 A, EAS = 80 mJ) absorbs inductive kickback during PWM commutation without external clamping.

Use Scenario: Power sequencing and fault isolation in modular server power distribution units (PDUs) and telecom line cards.

IC Role / Device Role / Timing Role: Inrush-limited high-side switch activated after soft-start and pre-charge completion.

Use Value: 175 °C TJ rating and stable r_DS(on) over temperature support long-term reliability under repeated hot-plug cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	V_DS = -55 V, r_DS(on) = 0.02 Ω @ -10 V, R_thJC = 2.0 °C/W	Higher voltage rating but higher on-resistance and thermal resistance	Preferred where >40 V blocking is required; less efficient at high current due to higher conduction loss
DMT4005LPS-13	V_DS = -40 V, r_DS(on) = 0.0045 Ω @ -10 V, TO-252, 150 °C TJ max	Lower r_DS(on) but reduced thermal margin and avalanche rating (EAS = 30 mJ)	Better for ultra-low-loss 25–40 A designs; unsuitable for high-energy inductive switching

Compared with IRF4905PbF and DMT4005LPS-13, the SUD50P04-13L-E3 balances low on-resistance, high avalanche ruggedness, and extended temperature capability-making it optimal for industrial 40 V systems demanding both efficiency and field reliability.

Availability

SUD50P04-13L-E3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and battery protection circuits requiring stable component supply and RoHS-compliant manufacturing.

Supply support for SUD50P04-13L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and automotive-grade reliability.

The SUD50P04-13L-E3 belongs to Vishay's TrenchFET® Gen III P-channel portfolio, engineered for high-current, high-temperature industrial switching where low gate charge and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for the SUD50P04-13L-E3 at 100 °C case temperature?

The SUD50P04-13L-E3 supports -43 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation without exceeding 175 °C junction temperature. Designers must verify heatsink performance to maintain case temperature within this limit during sustained load conditions for the SUD50P04-13L-E3.

Does the SUD50P04-13L-E3 have a fully rated avalanche capability, and what is its EAS value?

Yes, the SUD50P04-13L-E3 is fully rated for single-pulse avalanche with E_AS = 80 mJ at T_J = 25 °C, tested under standardized conditions (L = 0.1 mH). This rating is confirmed in the Absolute Maximum Ratings table and validated across production lots. The SUD50P04-13L-E3 leverages its trench structure and silicon design to sustain this energy without degradation, making it suitable for inductive load switching where voltage spikes occur.

Can the SUD50P04-13L-E3 be driven directly from a 3.3 V microcontroller GPIO?

No-the SUD50P04-13L-E3 has a gate threshold voltage range of -1.0 V to -3.0 V, but achieving low r_DS(on) requires V_GS ≤ -4.5 V (0.022 Ω) or ideally -10 V (0.013 Ω). A 3.3 V GPIO cannot produce the necessary negative gate-source voltage. The SUD50P04-13L-E3 must be driven by a dedicated gate driver or level-shifting circuit that supplies ≥ -4.5 V to the gate relative to source.

What is the thermal resistance from junction to case (R_thJC) for the SUD50P04-13L-E3, and how is it measured?

The SUD50P04-13L-E3 has a typical R_thJC of 1.3 °C/W, with a maximum of 1.8 °C/W, measured from junction to the drain-connected tab under standardized test conditions (per JESD51-1). This value assumes full thermal contact between the tab and a copper heatsink. The SUD50P04-13L-E3's low R_thJC enables high-power dissipation with minimal temperature rise when properly mounted-critical for compact industrial power designs.

Is the SUD50P04-13L-E3 pin-compatible with other TO-252 P-channel MOSFETs like the Si2301 or FDS4435?

No-the SUD50P04-13L-E3 uses standard TO-252 pinout (S-G-D, top view), but Si2301 (SOT-23) and FDS4435 (SO-8) are different packages with incompatible footprints and pin assignments. While functional alternatives exist in TO-252, direct pin compatibility requires matching package, terminal order, and drain-tab connectivity. The SUD50P04-13L-E3's TO-252 layout is mechanically compatible only with other DPAK devices sharing identical land pattern and tab orientation.

SUD50P04-13L-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3120 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 93.7W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50P04-13L-E3 FAQ

1.How can I place an order for SUD50P04-13L-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50P04-13L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50P04-13L-E3 reliable?

The price and inventory of SUD50P04-13L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50P04-13L-E3 is usually 5 days.

3.What payment methods are accepted for SUD50P04-13L-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50P04-13L-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50P04-13L-E3?

SUD50P04-13L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50P04-13L-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50P04-13L-E3?

For technical support, including SUD50P04-13L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50P04-13L-E3 requirements.

6.How does Aetrix verify that SUD50P04-13L-E3 is sourced from the original manufacturer or authorized distributors?

All SUD50P04-13L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50P04-13L-E3 meets industry standards.

7.What is the process for return or replacement of SUD50P04-13L-E3?

All SUD50P04-13L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50P04-13L-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50P04-13L-E3 part is unused and in its original packaging.

Return procedure for SUD50P04-13L-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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