Vishay Siliconix SUD50P04-13L-GE3

Overview

SUD50P04-13L-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -40 V drain-source voltage, 0.013 Ω rDS(on) at VGS = -10 V, and -60 A continuous drain current at TC = 25 °C. It operates up to 175 °C junction temperature and is housed in a TO-252 (DPAK) package with drain-connected tab, commonly used in high-efficiency DC-DC converters and reverse polarity protection circuits.

For engineers reviewing the SUD50P04-13L-GE3 datasheet, SUD50P04-13L-GE3 pinout, SUD50P04-13L-GE3 application, or SUD50P04-13L-GE3 equivalent, key selection criteria include its low on-resistance at -4.5 V gate drive (0.022 Ω), robust avalanche energy rating (80 mJ), and thermal performance validated to 175 °C TJ - critical for automotive body control modules and industrial power supplies.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-side and bidirectional load-switching configurations. Its gate threshold voltage range (-1.0 V to -3.0 V) ensures reliable turn-on with standard logic-level controllers, while the 63–95 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The device features an integrated source-drain body diode with 36–55 ns reverse recovery time and -1.0 to -1.5 V forward voltage at -50 A, enabling synchronous rectification and freewheeling in buck converters. Thermal resistance from junction-to-case is as low as 1.3 °C/W, allowing high-power dissipation when mounted on copper-clad PCBs or heatsinks.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, drain-connected tab for enhanced thermal transfer and electrical grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF4905PBF and DMT4005LPS-13, the SUD50P04-13L-GE3 offers optimal balance of low logic-level on-resistance, high-temperature operation, and TO-252 thermal scalability - making it preferred for space-constrained yet thermally demanding automotive and industrial load switches.

Availability

SUD50P04-13L-GE3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and smart battery protection systems requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle assurance.

Supply support for SUD50P04-13L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal performance.

The SUD50P04-13L-GE3 belongs to Vishay's TrenchFET® Gen II P-channel MOSFET family, engineered for high-current, high-temperature switching in automotive and industrial power management systems.

FAQ

What is the maximum continuous drain current for SUD50P04-13L-GE3 at 100 °C case temperature?

The SUD50P04-13L-GE3 supports -43 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 100 °C under full load.

Does SUD50P04-13L-GE3 support logic-level gate drive from a 3.3 V microcontroller?

Yes, the SUD50P04-13L-GE3 delivers 0.022 Ω rDS(on) at VGS = -4.5 V and remains fully enhanced down to VGS(th) = -3.0 V, making it compatible with 3.3 V logic when driven through an inverting buffer or open-drain gate driver. However, full -60 A rating requires -10 V drive; at -4.5 V, ID is limited to -48 A per the Product Summary.

Is the drain tab of SUD50P04-13L-GE3 electrically isolated from the PCB mounting pad?

No - the drain is internally connected to the exposed metal tab in the TO-252 package. When soldered to a PCB, the tab becomes part of the drain circuit and must be routed accordingly. If isolation from chassis ground is required, use insulating thermal pads or ceramic washers between the tab and heatsink, and ensure no copper pour beneath the tab connects to other nets.

What is the typical gate charge (Qg) of SUD50P04-13L-GE3 and how does it affect switching speed?

The SUD50P04-13L-GE3 has a typical total gate charge of 63 nC and maximum of 95 nC at VDS = -20 V and VGS = -10 V. With a gate resistance of 2.5 Ω in the test condition, this yields 15–25 ns turn-on delay and 47–70 ns fall time. Lower Qg relative to同类 devices reduces driver power loss and enables faster PWM edge rates in high-efficiency SMPS designs.

Can SUD50P04-13L-GE3 be used in avalanche mode for inductive load switching without external protection?

Yes - the SUD50P04-13L-GE3 is fully rated for repetitive avalanche operation with IAS = -40 A and EAS = 80 mJ. This allows safe clamping of inductive kickback in solenoid, relay, and motor control applications without snubber networks, provided peak current and energy per pulse remain within the SOA curve and thermal limits are observed.