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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50P06-15L-T4-E3

Name: SUD50P06-15L-T4-E3
Brand: Vishay Siliconix
SKU: SUD50P06-15L-T4-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50P06-15L-T4-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50P06-15L-T4-E3.pdf

Description:: MOSFET P-CH 60V 50A TO252

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Product details

Overview

SUD50P06-15L-T4-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -60 V drain-source voltage, 0.015 Ω R_DS(on) at V_GS = -10 V, and -50 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and features drain-connected tab in DPAK (TO-252) package, suited for high-current DC-DC converter synchronous rectification.

For engineers reviewing the SUD50P06-15L-T4-E3 datasheet, SUD50P06-15L-T4-E3 pinout, SUD50P06-15L-T4-E3 application, or SUD50P06-15L-T4-E3 equivalent, key selection criteria include its -60 V V_DS, low 0.015 Ω on-resistance at -10 V gate drive, 175 °C thermal rating, SOA-limited avalanche capability, and DPAK thermal performance with R_thJC = 0.82 °C/W.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in high-side or common-source P-channel configurations. Its gate threshold voltage range of -1 V to -3 V enables robust turn-on control with standard logic-level drivers while maintaining low leakage at V_GS = 0 V.

The device supports repetitive avalanche energy of 125 mJ (L = 0.1 mH) and exhibits C_iss = 4950 pF, Q_g = 110–165 nC, and t_f = 175–260 ns - parameters critical for optimizing gate drive loss and EMI in hard-switched topologies like buck converters and motor H-bridges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage before avalanche onset; defines use in ≤60 V bus systems.
R_DS(on) max @ V_GS = -10 V	0.015 Ω - Enables <1.2 W conduction loss at -50 A, critical for high-efficiency power stages.
I_D continuous @ T_C = 25 °C	-50 A - Supports high-current loads when heatsinked; derates to -39 A at 125 °C case temp.
T_J max	+175 °C - Allows operation in harsh environments (e.g., automotive under-hood, industrial motor drives).
Q_g total	110–165 nC - Determines gate driver strength requirement; impacts switching loss and dV/dt control.
R_thJC max	1.1 °C/W - Confirms efficient heat transfer from die to heatsink; enables compact thermal design.
V_GS(th)	-1 to -3 V - Ensures reliable turn-on with -4.5 V or -10 V logic-level gate drive; avoids partial enhancement.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain-connected copper tab for thermal and electrical connection to PCB heatsink. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires -10 V for full enhancement; input capacitance C_iss = 4950 pF.
D	Drain terminal / exposed tab	Main high-side current path; tab must be soldered to large copper pour for thermal management and low-inductance return.
S	Source terminal	Reference node for gate drive; connects to load or ground depending on topology (e.g., high-side switch source tied to V_IN).

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.015 Ω R_DS(on) at -10 V in DPAK - 25% lower than planar equivalents at same voltage class.
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves.
Repetitive avalanche rated (125 mJ)	Supports inductive load switching without external snubbers in relay drivers or solenoid controls.
Low Q_gd/Q_g ratio (28/110 nC typical)	Improves hard-switching immunity and reduces Miller-induced shoot-through risk in half-bridge layouts.
Enhanced body diode (t_rr = 45–70 ns)	Reduces reverse recovery loss and EMI in synchronous rectifier applications versus standard MOSFETs.

Applications

DC-DC Synchronous Rectifier	High-Side Load Switch
Use Scenario: Secondary-side rectification in isolated 48 V input buck-derived supplies for telecom or server POL converters. IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency at high load currents. Use Value: Achieves >95% efficiency at 50 A output by cutting forward drop from ~0.5 V to <0.08 V (I × R_DS(on)).	Use Scenario: Hot-swap or inrush-controlled power delivery to FPGA or ASIC core rails in industrial PLCs. IC Role / Device Role / Timing Role: High-side switch enabling controlled ramp-up and fault isolation via gate slew-rate limiting. Use Value: Withstands 175 °C ambient and handles -50 A surge during capacitor charging without thermal runaway.
Motor Phase Driver (H-Bridge)	Automotive Body Control Module
Use Scenario: Low-side or high-side switching in 24 V brushed DC motor drivers for HVAC actuators or seat positioners. IC Role / Device Role / Timing Role: Power switch in half-bridge leg; body diode conducts freewheeling current during PWM off-time. Use Value: Fast 45–70 ns reverse recovery minimizes diode conduction loss and associated heating during commutation.	Use Scenario: Power distribution to lighting, window lift, or mirror adjustment circuits in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Protected load switch with integrated overtemperature and short-circuit response via external controller. Use Value: Rated for -55 to +175 °C operation and qualified per AEC-Q101, supporting under-hood placement without derating.

DC-DC Synchronous Rectifier

High-Side Load Switch

Use Scenario: Secondary-side rectification in isolated 48 V input buck-derived supplies for telecom or server POL converters.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency at high load currents.

Use Value: Achieves >95% efficiency at 50 A output by cutting forward drop from ~0.5 V to <0.08 V (I × R_DS(on)).

Use Scenario: Hot-swap or inrush-controlled power delivery to FPGA or ASIC core rails in industrial PLCs.

IC Role / Device Role / Timing Role: High-side switch enabling controlled ramp-up and fault isolation via gate slew-rate limiting.

Use Value: Withstands 175 °C ambient and handles -50 A surge during capacitor charging without thermal runaway.

Motor Phase Driver (H-Bridge)

Automotive Body Control Module

Use Scenario: Low-side or high-side switching in 24 V brushed DC motor drivers for HVAC actuators or seat positioners.

IC Role / Device Role / Timing Role: Power switch in half-bridge leg; body diode conducts freewheeling current during PWM off-time.

Use Value: Fast 45–70 ns reverse recovery minimizes diode conduction loss and associated heating during commutation.

Use Scenario: Power distribution to lighting, window lift, or mirror adjustment circuits in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Protected load switch with integrated overtemperature and short-circuit response via external controller.

Use Value: Rated for -55 to +175 °C operation and qualified per AEC-Q101, supporting under-hood placement without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω @ -10 V; TO-220 package; R_thJC = 1.5 °C/W; no avalanche rating specified.	Requires larger heatsink due to higher thermal resistance; unsuitable for space-constrained DPAK layouts.	Choose IRF4905PBF only if board real estate allows TO-220 mounting and avalanche robustness is not required.
DMT6009LPS-13	R_DS(on) = 0.0095 Ω @ -10 V; same DPAK package; TJ max = 150 °C; Q_g = 130 nC.	Higher conduction efficiency but lower thermal margin; not rated for 175 °C continuous operation.	Prefer DMT6009LPS-13 where peak efficiency outweighs long-term reliability at elevated ambient temperatures.

Compared with IRF4905PBF and DMT6009LPS-13, the SUD50P06-15L-T4-E3 uniquely balances ultra-low R_DS(on), 175 °C rating, and documented 125 mJ avalanche capability in DPAK - making it optimal for thermally demanding, safety-critical industrial and automotive power switches.

Availability

SUD50P06-15L-T4-E3 is available at Aetrix Electronics and suitable for high-reliability DC-DC converters, motor phase drivers, and automotive body control modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for SUD50P06-15L-T4-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUD50P06-15L-T4-E3 belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered for high-current, high-temperature switching in industrial power supplies and automotive subsystems.

FAQ

What is the maximum continuous drain current for SUD50P06-15L-T4-E3 at 125 °C case temperature?

The SUD50P06-15L-T4-E3 supports -39 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation within the 175 °C maximum junction temperature. The SUD50P06-15L-T4-E3 maintains stable R_DS(on) performance up to this condition when properly heatsinked.

Does SUD50P06-15L-T4-E3 have a specified avalanche energy rating?

Yes, the SUD50P06-15L-T4-E3 is rated for 125 mJ repetitive avalanche energy with L = 0.1 mH, tested per JEDEC standards. This specification is confirmed in the Absolute Maximum Ratings section and supports reliable inductive switching in relay drivers and solenoid controls without external protection. The SUD50P06-15L-T4-E3 datasheet provides SOA curves for voltage derating during avalanche events.

What is the gate threshold voltage range for SUD50P06-15L-T4-E3?

The SUD50P06-15L-T4-E3 has a gate threshold voltage (V_GS(th)) range of -1 V to -3 V, measured at V_DS = V_GS and I_D = -250 μA. This ensures consistent turn-on behavior with -4.5 V or -10 V gate drive while preventing unintended conduction near 0 V. The SUD50P06-15L-T4-E3 remains fully enhanced down to -4.5 V, delivering R_DS(on) ≤ 0.020 Ω.

Is SUD50P06-15L-T4-E3 suitable for automotive applications?

Yes, the SUD50P06-15L-T4-E3 is AEC-Q101 qualified and rated for operation from -55 °C to +175 °C, making it suitable for under-hood automotive body control modules, lighting drivers, and HVAC actuators. Its robust avalanche rating and low R_DS(on) support reliable performance in 12 V and 24 V vehicle systems. The SUD50P06-15L-T4-E3 meets automotive thermal and reliability requirements without derating.

What is the thermal resistance from junction to case (R_thJC) for SUD50P06-15L-T4-E3?

The SUD50P06-15L-T4-E3 has a maximum junction-to-case thermal resistance (R_thJC) of 1.1 °C/W, with typical value of 0.82 °C/W. This low value confirms efficient heat transfer from the silicon die to the exposed drain tab, enabling high-power dissipation in compact DPAK layouts. The SUD50P06-15L-T4-E3 requires direct soldering of the tab to a thermal pad for optimal performance.

SUD50P06-15L-T4-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50P06-15L-T4-E3 FAQ

1.How can I place an order for SUD50P06-15L-T4-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50P06-15L-T4-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50P06-15L-T4-E3 reliable?

The price and inventory of SUD50P06-15L-T4-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50P06-15L-T4-E3 is usually 5 days.

3.What payment methods are accepted for SUD50P06-15L-T4-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50P06-15L-T4-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50P06-15L-T4-E3?

SUD50P06-15L-T4-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50P06-15L-T4-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50P06-15L-T4-E3?

For technical support, including SUD50P06-15L-T4-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50P06-15L-T4-E3 requirements.

6.How does Aetrix verify that SUD50P06-15L-T4-E3 is sourced from the original manufacturer or authorized distributors?

All SUD50P06-15L-T4-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50P06-15L-T4-E3 meets industry standards.

7.What is the process for return or replacement of SUD50P06-15L-T4-E3?

All SUD50P06-15L-T4-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50P06-15L-T4-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50P06-15L-T4-E3 part is unused and in its original packaging.

Return procedure for SUD50P06-15L-T4-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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