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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50P10-43L-BE3

Name: SUD50P10-43L-BE3
Brand: Vishay Siliconix
SKU: SUD50P10-43L-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50P10-43L-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50P10-43L-BE3.pdf

Description:: MOSFET P-CH 100V 9.2A/37.1A DPAK

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Product details

Overview

SUD50P10-43L-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -100 V drain-source voltage, 0.043 Ω R_DS(on) at V_GS = -10 V, and -37 A continuous drain current at T_C = 25 °C, designed for high-efficiency DC-DC power conversion and load switching in industrial power supplies.

For engineers reviewing the SUD50P10-43L-BE3 datasheet, SUD50P10-43L-BE3 pinout, SUD50P10-43L-BE3 application, or SUD50P10-43L-BE3 equivalent, key selection criteria include its TO-252 (DPAK) package thermal performance, body diode recovery characteristics (t_rr = 60–90 ns), and gate charge profile (Q_g = 54 nC @ V_GS = -4.5 V) for optimized switching loss in synchronous rectification and hot-swap circuits.

Technical Context

This device employs trench-gate silicon technology to achieve low on-resistance with robust avalanche capability (E_AS = 61 mJ) and stable threshold voltage (-1 V to -3 V) over temperature. Its negative gate drive requirement and source-connected tab support high-side switch configurations in isolated buck regulators and reverse-polarity protection circuits.

The MOSFET features a fully rated body diode with V_SD = -0.8 to -1.2 V at I_S = -7.7 A and Q_rr = 150–225 nC, enabling reliable freewheeling in flyback and active clamp topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Withstands full 100 V reverse-biased drain-source blocking in high-voltage DC bus applications.
R_DS(on)	0.043 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 6 A continuous load in compact TO-252 layout.
I_D (continuous)	-37 A @ T_C = 25 °C - Supports high-current load switching with minimal heatsink requirements when mounted on 1" × 1" FR4.
Q_g	54 nC @ V_GS = -4.5 V - Optimized for 3.3 V/5 V logic-level gate drive with predictable turn-on timing in microcontroller-based control.
t_rr	60–90 ns - Limits reverse recovery losses during hard-switched transitions in offline SMPS and motor drivers.
R_thJC	0.85 °C/W (typ.) - Allows direct thermal coupling to PCB copper pour or heatsink for sustained >20 W power dissipation.
V_GS(th)	-1 to -3 V - Ensures reliable turn-on with standard logic-level gate drivers while avoiding spurious conduction near 0 V.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for enhanced thermal transfer. Dimensions per Vishay Doc. #71197 (Rev. 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
S (Source)	Reference node for gate drive and current return path	Connected internally to substrate; forms common reference for V_GS control and must be routed with low-inductance trace in high-dI/dt applications.
G (Gate)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; sensitive to ESD; requires RC snubber or gate resistor for oscillation suppression in fast-switching layouts.
D (Drain)	Main current-carrying terminal (tab-connected)	Exposed metal tab is electrically tied to drain; must be isolated from chassis ground unless drain is system ground; primary thermal path to PCB copper or heatsink.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced switching + conduction loss trade-off in 100 V-class P-channel devices.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; suitable for automotive and industrial assemblies requiring green manufacturing compliance.
100 % R_g tested	Guarantees gate resistance ≤ 4 Ω, ensuring consistent gate drive timing and minimizing risk of shoot-through in half-bridge configurations.
Specified avalanche energy	E_AS = 61 mJ enables robust operation under inductive load switching transients without external clamping in UPS and telecom power systems.
Low V_SD body diode	V_SD = -0.8 to -1.2 V at -7.7 A reduces forward conduction loss during freewheeling, improving efficiency in non-synchronous converters.

Applications

Reverse Polarity Protection	Hot-Swap Controller
Use Scenario: Prevents damage from accidental battery or supply connection reversal in 24 V/48 V industrial equipment. IC Role / Device Role / Timing Role: High-side P-channel switch placed between input connector and system rail; turned on only when polarity is correct. Use Value: Eliminates need for series Schottky diode, reducing voltage drop by >0.4 V and conduction loss by >70 % compared to diode-based solutions.	Use Scenario: Enables safe insertion/removal of boards into live backplanes in telecom line cards and server modules. IC Role / Device Role / Timing Role: Inrush current limiter controlled by dedicated hot-swap IC; SUD50P10-43L-BE3 absorbs surge during soft-start phase. Use Value: Withstands 40 A pulsed drain current (I_DM) and 61 mJ single-pulse avalanche energy, preventing failure during repeated plug-in events.
Synchronous Rectifier	DC-DC Load Switch
Use Scenario: Replaces output rectifier diode in isolated flyback or forward converters operating at 100 kHz–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled or controller-generated gate signal; body diode conducts first, then channel turns on. Use Value: 0.043 Ω R_DS(on) cuts conduction loss to <0.3 W at 9.2 A, versus >1.5 W for 40 V Schottky, improving converter efficiency by 2–3 %.	Use Scenario: Controls power delivery to FPGA, ASIC, or memory subsystems requiring sequenced or fault-isolated supply rails. IC Role / Device Role / Timing Role: High-side load switch with integrated gate driver interface; provides overcurrent and thermal shutdown signaling via external circuitry. Use Value: TO-252 package allows direct PCB copper pour thermal management, supporting >15 A steady-state loads without discrete heatsink in space-constrained embedded designs.

Reverse Polarity Protection

Hot-Swap Controller

Use Scenario: Prevents damage from accidental battery or supply connection reversal in 24 V/48 V industrial equipment.

IC Role / Device Role / Timing Role: High-side P-channel switch placed between input connector and system rail; turned on only when polarity is correct.

Use Value: Eliminates need for series Schottky diode, reducing voltage drop by >0.4 V and conduction loss by >70 % compared to diode-based solutions.

Use Scenario: Enables safe insertion/removal of boards into live backplanes in telecom line cards and server modules.

IC Role / Device Role / Timing Role: Inrush current limiter controlled by dedicated hot-swap IC; SUD50P10-43L-BE3 absorbs surge during soft-start phase.

Use Value: Withstands 40 A pulsed drain current (I_DM) and 61 mJ single-pulse avalanche energy, preventing failure during repeated plug-in events.

Synchronous Rectifier

DC-DC Load Switch

Use Scenario: Replaces output rectifier diode in isolated flyback or forward converters operating at 100 kHz–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled or controller-generated gate signal; body diode conducts first, then channel turns on.

Use Value: 0.043 Ω R_DS(on) cuts conduction loss to <0.3 W at 9.2 A, versus >1.5 W for 40 V Schottky, improving converter efficiency by 2–3 %.

Use Scenario: Controls power delivery to FPGA, ASIC, or memory subsystems requiring sequenced or fault-isolated supply rails.

IC Role / Device Role / Timing Role: High-side load switch with integrated gate driver interface; provides overcurrent and thermal shutdown signaling via external circuitry.

Use Value: TO-252 package allows direct PCB copper pour thermal management, supporting >15 A steady-state loads without discrete heatsink in space-constrained embedded designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 0.2 Ω @ V_GS = -10 V; higher on-resistance, TO-220 package; no specified Q_g or t_rr in datasheet	Lower switching speed; suited for lower-frequency linear regulation or simple ON/OFF control, not high-efficiency SMPS	Select when cost sensitivity outweighs efficiency needs and board space permits TO-220 mounting.
DMG1012T	R_DS(on) = 0.052 Ω @ V_GS = -4.5 V; smaller SOT-23 package; I_D = -2.8 A (much lower current rating)	Limited to sub-3 A loads; unsuitable for industrial power rails but viable for portable USB-C PD load switches	Choose for ultra-compact, low-current applications where TO-252 footprint is prohibitive and thermal budget is tight.

Compared with IRF9540NPBF and DMG1012T, the SUD50P10-43L-BE3 uniquely balances high current (-37 A), low R_DS(on) (0.043 Ω), and logic-level gate drive in a thermally efficient TO-252 package-making it optimal for mid-power industrial DC-DC and protection circuits where both conduction loss and layout area matter.

Availability

SUD50P10-43L-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom rectifiers, and embedded load management systems requiring stable component supply across multi-year production cycles.

Supply support for SUD50P10-43L-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power and signal conditioning components.

The SUD50P10-43L-BE3 belongs to Vishay's TrenchFET® P-channel portfolio, engineered specifically for high-efficiency, high-current switching in industrial and telecom infrastructure where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for the SUD50P10-43L-BE3 at 70 °C case temperature?

The SUD50P10-43L-BE3 supports -29.1 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient airflow. The SUD50P10-43L-BE3 maintains stable R_DS(on) up to 150 °C junction temperature, enabling reliable operation in thermally constrained environments.

Does the SUD50P10-43L-BE3 support logic-level gate drive at 4.5 V?

Yes, the SUD50P10-43L-BE3 is fully characterized for logic-level operation: R_DS(on) = 0.048 Ω at V_GS = -4.5 V and I_D = -7.7 A, with total gate charge Q_g = 54 nC under those conditions. This makes the SUD50P10-43L-BE3 compatible with standard 3.3 V and 5 V microcontroller GPIOs or dedicated low-voltage gate drivers without level-shifting circuitry.

What is the thermal resistance from junction to case (R_thJC) for the SUD50P10-43L-BE3?

The SUD50P10-43L-BE3 has a typical junction-to-case thermal resistance (R_thJC) of 0.85 °C/W, with a maximum of 1.1 °C/W. This low value is enabled by the drain-connected copper tab in the TO-252 package, allowing efficient heat transfer to the PCB or external heatsink. When designing thermal layout, the SUD50P10-43L-BE3 benefits from ≥1 in² of 2-oz copper pour directly under the tab per Application Note 826.

Is the SUD50P10-43L-BE3 suitable for avalanche-rated applications?

Yes, the SUD50P10-43L-BE3 is fully rated for repetitive and single-pulse avalanche operation, with I_AS = -35 A and E_AS = 61 mJ (L = 0.1 mH). These parameters are production-tested and guaranteed, making the SUD50P10-43L-BE3 appropriate for inductive load switching, relay driving, and flyback converter snubbing where unclamped inductive kickback occurs.

How does the body diode performance of the SUD50P10-43L-BE3 compare to discrete Schottky diodes?

The SUD50P10-43L-BE3 body diode has V_SD = -0.8 to -1.2 V at I_S = -7.7 A and t_rr = 60–90 ns, offering lower forward voltage than most 100 V Schottkys (typically >0.9 V) but slower recovery than ultrafast types. Its Q_rr = 150–225 nC is well-defined and repeatable, enabling accurate loss modeling in synchronous rectifier designs where the SUD50P10-43L-BE3 replaces discrete diodes without compromising reliability.

SUD50P10-43L-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Ta), 37.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 43mOhm @ 9.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50P10-43L-BE3 FAQ

1.How can I place an order for SUD50P10-43L-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50P10-43L-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50P10-43L-BE3 reliable?

The price and inventory of SUD50P10-43L-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50P10-43L-BE3 is usually 5 days.

3.What payment methods are accepted for SUD50P10-43L-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50P10-43L-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50P10-43L-BE3?

SUD50P10-43L-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50P10-43L-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50P10-43L-BE3?

For technical support, including SUD50P10-43L-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50P10-43L-BE3 requirements.

6.How does Aetrix verify that SUD50P10-43L-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD50P10-43L-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50P10-43L-BE3 meets industry standards.

7.What is the process for return or replacement of SUD50P10-43L-BE3?

All SUD50P10-43L-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50P10-43L-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50P10-43L-BE3 part is unused and in its original packaging.

Return procedure for SUD50P10-43L-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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