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Vishay Siliconix SUD70090E-GE3

Part No.:
SUD70090E-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSUD70090E-GE3.pdf
Description:
MOSFET N-CH 100V 50A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,418

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Product details

Overview

SUD70090E-GE3 from Vishay Siliconix is an N-channel 100 V, 50 A TO-252 (DPAK) power MOSFET optimized for high-efficiency switching in DC/DC converters and motor drive switches, featuring 7.5 mΩ RDS(on) at VGS = 10 V, 33 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the SUD70090E-GE3 datasheet, SUD70090E-GE3 pinout, SUD70090E-GE3 application, or SUD70090E-GE3 equivalent, this device is selected for high-current, thermally demanding power-switching roles where low conduction loss, robust avalanche capability (80 mJ), and Pb-free/halogen-free compliance are required.

Technical Context

This MOSFET employs a planar silicon process with ThunderFET® technology to achieve low Qgd/Qgs ratio (<1), enabling fast, low-loss switching transitions. Its 1.2 °C/W junction-to-case thermal resistance supports high-power operation when mounted on copper-clad PCBs or heatsinks.

The device is fully characterized for unclamped inductive switching (UIS), 100% Rg tested, and rated for continuous drain current up to 50 A at TC = 25 °C and 70 °C - limited by package thermal capacity rather than silicon limits.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - supports bus voltages up to 48 V nominal systems with 2× safety margin
RDS(on) max8.9 mΩ at VGS = 10 V - enables <1 W conduction loss at 15 A continuous drain current
ID continuous50 A at TC = 25 °C - requires ≥1"² FR4 PCB copper area or heatsink for sustained operation
Qg typ33 nC - determines gate driver power requirement and switching speed in hard-switched topologies
EAS80 mJ - ensures reliable operation under inductive load turn-off without external snubbers
RthJC1.2 °C/W - allows direct thermal path to heatsink via drain-tab mounting, critical for >30 W dissipation
TJ max+175 °C - enables operation in automotive under-hood or industrial motor-control environments

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. 71197 (Rev. 03-Oct-2022); drain tab occupies full underside of package and must be soldered to large copper pour or heatsink.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalAccepts 0–20 V logic-level or PWM drive; threshold voltage 2–4 V enables compatibility with 3.3 V and 5 V microcontrollers
D (Drain)High-side power outputInternally connected to exposed metal tab - must be electrically and thermally coupled to system ground plane or heatsink
S (Source)Power return referenceServes as local ground reference for gate drive; source inductance directly impacts switching stability and dV/dt immunity

Key Features

FeatureDesign Value
ThunderFET® architectureOptimized cell layout reduces Qgd/Qgs ratio to <1, minimizing Miller-induced switching delay and improving EMI performance
100 % Rg and UIS testedEnsures gate resistance consistency across production lots and guarantees single-pulse avalanche ruggedness to 80 mJ
Lead (Pb)-free and halogen-freeComplies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for consumer, industrial, and automotive applications
Drain-connected tabEnables direct thermal coupling to PCB copper or external heatsink, reducing junction-to-ambient thermal resistance by up to 33× vs. junction-to-ambient alone

Applications

Battery Management System (BMS)Power Tool Motor Drive

Use Scenario: High-current bidirectional battery protection and cell balancing in 36–48 V Li-ion packs.

IC Role / Device Role / Timing Role: Primary high-side switch for charge/discharge path control and short-circuit isolation.

Use Value: Low RDS(on) minimizes voltage drop during 50 A peak discharge, preserving state-of-charge accuracy and thermal headroom.

Use Scenario: H-bridge motor control in cordless drills and impact drivers requiring rapid direction reversal and stall current handling.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in half-bridge configurations driving brushed DC motors.

Use Value: 120 A pulsed drain rating and 175 °C TJ allow safe operation during intermittent 3–5 s stall events without derating.

Industrial DC/AC InverterServer/Telecom DC/DC Converter

Use Scenario: Output stage switching in 48 V input inverters converting to 120/230 V AC for backup power systems.

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology operating at 20–50 kHz.

Use Value: Low Coss (845 pF) and Crss (54 pF) reduce switching losses and improve ZVS feasibility in resonant designs.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V to 12 V/5 V DC/DC modules for data center PSUs.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in buck or LLC synchronous rectification stages.

Use Value: 33 nC Qg enables efficient drive with standard gate drivers (e.g., UCC27531), reducing driver IC count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7470PBFHigher RDS(on) (11 mΩ @ 10 V), TO-252 package, same VDS and ID ratingsLower efficiency in high-current continuous operation due to +23 % conduction lossSelect when legacy design validation exists and minor efficiency trade-off is acceptable
STP75NF75TO-220 package, higher RDS(on) (7.5 mΩ @ 10 V but rated at 75 A), no Pb-free/halogen-free certification statedRequires through-hole assembly and larger board footprint; not compliant with latest environmental directivesSelect only for cost-sensitive, non-regulated industrial applications with manual assembly

Compared with IRF7470PBF and STP75NF75, the SUD70090E-GE3 delivers superior thermal performance via its optimized DPAK thermal path, tighter gate charge distribution, and guaranteed halogen-free compliance - making it preferred for high-density, thermally constrained, and regulated power systems.

Availability

SUD70090E-GE3 is available at Aetrix Electronics and suitable for battery management systems, power tool motor drives, and industrial DC/AC inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SUD70090E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SUD70090E-GE3 belongs to Vishay's ThunderFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in thermally demanding industrial and portable power applications.

FAQ

What is the maximum continuous drain current rating for SUD70090E-GE3 at 70 °C case temperature?

The SUD70090E-GE3 is rated for 50 A continuous drain current at both TC = 25 °C and TC = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating is package-limited and independent of junction temperature - meaning thermal design must ensure case temperature does not exceed 70 °C to sustain full 50 A operation. The SUD70090E-GE3 achieves this via its low RthJC of 1.2 °C/W and drain-tab thermal path.

Does SUD70090E-GE3 support logic-level gate drive?

Yes, the SUD70090E-GE3 has a gate threshold voltage (VGS(th)) range of 2–4 V, enabling reliable turn-on with standard 3.3 V or 5 V logic-level signals. However, to achieve its specified 8.9 mΩ RDS(on), a VGS of 10 V is required. The SUD70090E-GE3 is not a true logic-level MOSFET for low-RDS(on) operation but offers partial logic compatibility for control signaling.

What is the avalanche energy rating of SUD70090E-GE3 and how is it tested?

The SUD70090E-GE3 is rated for 80 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC standard JESD24-1. This rating is guaranteed by 100 % UIS testing in production. The SUD70090E-GE3 uses rugged silicon design and internal layout to absorb inductive energy safely during switching transients, eliminating need for external clamping in many motor and converter designs.

Is SUD70090E-GE3 compatible with automated SMT reflow processes?

Yes, the SUD70090E-GE3 is qualified for standard lead-free reflow profiles (per J-STD-020), including peak temperatures up to 260 °C. Its TO-252AA package meets IPC-7351B land pattern recommendations (see Vishay Application Note 826), and the SUD70090E-GE3's Pb-free/halogen-free construction ensures compatibility with Class 3 assembly requirements and long-term reliability in automated manufacturing.

How does the Qgd/Qgs ratio benefit switching performance in SUD70090E-GE3?

The SUD70090E-GE3 features a Qgd/Qgs ratio < 1 - a key ThunderFET® characteristic that reduces Miller plateau duration and improves controllability during turn-off. This lowers switching losses, suppresses parasitic oscillation, and enhances dV/dt immunity. For the SUD70090E-GE3, typical Qgd is 7.5 nC and Qgs is 8.8 nC, directly contributing to its fast 36 ns turn-off delay and 45 ns fall time.

SUD70090E-GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
ThunderFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1950 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

SUD70090E-GE3 FAQ

1.How can I place an order for SUD70090E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD70090E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD70090E-GE3 reliable?

The price and inventory of SUD70090E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD70090E-GE3 is usually 5 days.

3.What payment methods are accepted for SUD70090E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD70090E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD70090E-GE3?

SUD70090E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD70090E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD70090E-GE3?

For technical support, including SUD70090E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD70090E-GE3 requirements.

6.How does Aetrix verify that SUD70090E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD70090E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD70090E-GE3 meets industry standards.

7.What is the process for return or replacement of SUD70090E-GE3?

All SUD70090E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD70090E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD70090E-GE3 part is unused and in its original packaging.

Return procedure for SUD70090E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUD70090E-GE3 Tags

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