Vishay Siliconix SUD70090E-GE3
- Part No.:
- SUD70090E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD70090E-GE3.pdf
- Description:
- MOSFET N-CH 100V 50A TO252
- Quantity:
- Payment:

- Shipping:

Inventory:1,418
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Product details
Overview
SUD70090E-GE3 from Vishay Siliconix is an N-channel 100 V, 50 A TO-252 (DPAK) power MOSFET optimized for high-efficiency switching in DC/DC converters and motor drive switches, featuring 7.5 mΩ RDS(on) at VGS = 10 V, 33 nC total gate charge, and 175 °C maximum junction temperature.
For engineers reviewing the SUD70090E-GE3 datasheet, SUD70090E-GE3 pinout, SUD70090E-GE3 application, or SUD70090E-GE3 equivalent, this device is selected for high-current, thermally demanding power-switching roles where low conduction loss, robust avalanche capability (80 mJ), and Pb-free/halogen-free compliance are required.
Technical Context
This MOSFET employs a planar silicon process with ThunderFET® technology to achieve low Qgd/Qgs ratio (<1), enabling fast, low-loss switching transitions. Its 1.2 °C/W junction-to-case thermal resistance supports high-power operation when mounted on copper-clad PCBs or heatsinks.
The device is fully characterized for unclamped inductive switching (UIS), 100% Rg tested, and rated for continuous drain current up to 50 A at TC = 25 °C and 70 °C - limited by package thermal capacity rather than silicon limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports bus voltages up to 48 V nominal systems with 2× safety margin |
| RDS(on) max | 8.9 mΩ at VGS = 10 V - enables <1 W conduction loss at 15 A continuous drain current |
| ID continuous | 50 A at TC = 25 °C - requires ≥1"² FR4 PCB copper area or heatsink for sustained operation |
| Qg typ | 33 nC - determines gate driver power requirement and switching speed in hard-switched topologies |
| EAS | 80 mJ - ensures reliable operation under inductive load turn-off without external snubbers |
| RthJC | 1.2 °C/W - allows direct thermal path to heatsink via drain-tab mounting, critical for >30 W dissipation |
| TJ max | +175 °C - enables operation in automotive under-hood or industrial motor-control environments |
Pinout & Package
TO-252AA (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. 71197 (Rev. 03-Oct-2022); drain tab occupies full underside of package and must be soldered to large copper pour or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 0–20 V logic-level or PWM drive; threshold voltage 2–4 V enables compatibility with 3.3 V and 5 V microcontrollers |
| D (Drain) | High-side power output | Internally connected to exposed metal tab - must be electrically and thermally coupled to system ground plane or heatsink |
| S (Source) | Power return reference | Serves as local ground reference for gate drive; source inductance directly impacts switching stability and dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® architecture | Optimized cell layout reduces Qgd/Qgs ratio to <1, minimizing Miller-induced switching delay and improving EMI performance |
| 100 % Rg and UIS tested | Ensures gate resistance consistency across production lots and guarantees single-pulse avalanche ruggedness to 80 mJ |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for consumer, industrial, and automotive applications |
| Drain-connected tab | Enables direct thermal coupling to PCB copper or external heatsink, reducing junction-to-ambient thermal resistance by up to 33× vs. junction-to-ambient alone |
Applications
| Battery Management System (BMS) | Power Tool Motor Drive |
|---|---|
Use Scenario: High-current bidirectional battery protection and cell balancing in 36–48 V Li-ion packs. IC Role / Device Role / Timing Role: Primary high-side switch for charge/discharge path control and short-circuit isolation. Use Value: Low RDS(on) minimizes voltage drop during 50 A peak discharge, preserving state-of-charge accuracy and thermal headroom. | Use Scenario: H-bridge motor control in cordless drills and impact drivers requiring rapid direction reversal and stall current handling. IC Role / Device Role / Timing Role: Low-side or high-side switching element in half-bridge configurations driving brushed DC motors. Use Value: 120 A pulsed drain rating and 175 °C TJ allow safe operation during intermittent 3–5 s stall events without derating. |
| Industrial DC/AC Inverter | Server/Telecom DC/DC Converter |
Use Scenario: Output stage switching in 48 V input inverters converting to 120/230 V AC for backup power systems. IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology operating at 20–50 kHz. Use Value: Low Coss (845 pF) and Crss (54 pF) reduce switching losses and improve ZVS feasibility in resonant designs. | Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V to 12 V/5 V DC/DC modules for data center PSUs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in buck or LLC synchronous rectification stages. Use Value: 33 nC Qg enables efficient drive with standard gate drivers (e.g., UCC27531), reducing driver IC count and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (11 mΩ @ 10 V), TO-252 package, same VDS and ID ratings | Lower efficiency in high-current continuous operation due to +23 % conduction loss | Select when legacy design validation exists and minor efficiency trade-off is acceptable |
| STP75NF75 | TO-220 package, higher RDS(on) (7.5 mΩ @ 10 V but rated at 75 A), no Pb-free/halogen-free certification stated | Requires through-hole assembly and larger board footprint; not compliant with latest environmental directives | Select only for cost-sensitive, non-regulated industrial applications with manual assembly |
Compared with IRF7470PBF and STP75NF75, the SUD70090E-GE3 delivers superior thermal performance via its optimized DPAK thermal path, tighter gate charge distribution, and guaranteed halogen-free compliance - making it preferred for high-density, thermally constrained, and regulated power systems.
Availability
SUD70090E-GE3 is available at Aetrix Electronics and suitable for battery management systems, power tool motor drives, and industrial DC/AC inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SUD70090E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.
The SUD70090E-GE3 belongs to Vishay's ThunderFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in thermally demanding industrial and portable power applications.
FAQ
What is the maximum continuous drain current rating for SUD70090E-GE3 at 70 °C case temperature?
The SUD70090E-GE3 is rated for 50 A continuous drain current at both TC = 25 °C and TC = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating is package-limited and independent of junction temperature - meaning thermal design must ensure case temperature does not exceed 70 °C to sustain full 50 A operation. The SUD70090E-GE3 achieves this via its low RthJC of 1.2 °C/W and drain-tab thermal path.
Does SUD70090E-GE3 support logic-level gate drive?
Yes, the SUD70090E-GE3 has a gate threshold voltage (VGS(th)) range of 2–4 V, enabling reliable turn-on with standard 3.3 V or 5 V logic-level signals. However, to achieve its specified 8.9 mΩ RDS(on), a VGS of 10 V is required. The SUD70090E-GE3 is not a true logic-level MOSFET for low-RDS(on) operation but offers partial logic compatibility for control signaling.
What is the avalanche energy rating of SUD70090E-GE3 and how is it tested?
The SUD70090E-GE3 is rated for 80 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC standard JESD24-1. This rating is guaranteed by 100 % UIS testing in production. The SUD70090E-GE3 uses rugged silicon design and internal layout to absorb inductive energy safely during switching transients, eliminating need for external clamping in many motor and converter designs.
Is SUD70090E-GE3 compatible with automated SMT reflow processes?
Yes, the SUD70090E-GE3 is qualified for standard lead-free reflow profiles (per J-STD-020), including peak temperatures up to 260 °C. Its TO-252AA package meets IPC-7351B land pattern recommendations (see Vishay Application Note 826), and the SUD70090E-GE3's Pb-free/halogen-free construction ensures compatibility with Class 3 assembly requirements and long-term reliability in automated manufacturing.
How does the Qgd/Qgs ratio benefit switching performance in SUD70090E-GE3?
The SUD70090E-GE3 features a Qgd/Qgs ratio < 1 - a key ThunderFET® characteristic that reduces Miller plateau duration and improves controllability during turn-off. This lowers switching losses, suppresses parasitic oscillation, and enhances dV/dt immunity. For the SUD70090E-GE3, typical Qgd is 7.5 nC and Qgs is 8.8 nC, directly contributing to its fast 36 ns turn-off delay and 45 ns fall time.
SUD70090E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SUD70090E-GE3 FAQ
1.How can I place an order for SUD70090E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD70090E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD70090E-GE3 reliable?
The price and inventory of SUD70090E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD70090E-GE3 is usually 5 days.
3.What payment methods are accepted for SUD70090E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD70090E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD70090E-GE3?
SUD70090E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD70090E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD70090E-GE3?
For technical support, including SUD70090E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD70090E-GE3 requirements.
6.How does Aetrix verify that SUD70090E-GE3 is sourced from the original manufacturer or authorized distributors?
All SUD70090E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD70090E-GE3 meets industry standards.
7.What is the process for return or replacement of SUD70090E-GE3?
All SUD70090E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD70090E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD70090E-GE3 part is unused and in its original packaging.
Return procedure for SUD70090E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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