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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD80460E-BE3

Name: SUD80460E-BE3
Brand: Vishay Siliconix
SKU: SUD80460E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD80460E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD80460E-BE3.pdf

Description:: MOSFET N-CH 150V 42A TO252AA

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Product details

Overview

SUD80460E-BE3 from Vishay Siliconix is an N-channel 150 V, 42 A (T_C = 25 °C), TO-252-packaged power MOSFET with R_DS(on) = 0.0447 Ω at V_GS = 10 V and 175 °C maximum junction temperature, designed for high-efficiency boost converters and synchronous rectification in industrial power supplies.

For engineers reviewing the SUD80460E-BE3 datasheet, SUD80460E-BE3 pinout, SUD80460E-BE3 application, or SUD80460E-BE3 equivalent, this device offers verified UIS robustness, 100 % R_g testing, and thermal performance validated up to 175 °C - critical for high-reliability DC/AC inverters and LED backlighting systems operating under sustained load and elevated ambient temperatures.

Technical Context

This ThunderFET® MOSFET employs planar trench-gate technology optimized for low conduction loss and fast switching. Its R_DS(on) of 0.0372 Ω (typ.) at V_GS = 10 V and I_D = 8.3 A enables high-current operation with minimal I²R heating, while Q_g = 10.5 nC (typ.) supports efficient gate drive in hard-switched topologies.

The device features a drain-connected tab for direct heatsinking, R_thJC = 2.3 °C/W, and SOA-rated pulsed current capability (I_DM = 40 A, t = 100 μs). Body diode parameters - V_SD = 0.85 V (typ.), t_rr = 68 ns (typ.), Q_rr = 0.21 μC (typ.) - are characterized for synchronous rectifier use where reverse recovery behavior directly impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands DC bus voltages up to 150 V in boost and inverter stages without breakdown.
R_DS(on) max @ V_GS = 10 V	0.0447 Ω - Limits conduction loss to ≤15.7 W at 42 A continuous drain current (T_C = 25 °C).
Q_g typ.	10.5 nC - Enables <16 ns turn-on delay and <30 ns rise time with 1 Ω gate resistor, supporting >500 kHz switching.
I_D continuous @ T_C = 25 °C	42 A - Supports high-power output stages without parallel devices in PCB-mounted applications.
T_J max	175 °C - Rated for operation in enclosed industrial enclosures or high-ambient environments (e.g., solar inverters).
R_thJC	2.3 °C/W - Allows ≥21.7 W power dissipation at T_C = 125 °C with minimal thermal interface resistance.
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

TO-252 (DPAK) package with exposed drain tab for thermal and electrical connection to heatsink or PCB copper pour. Dimensions per Vishay document 71197 (Revision 03-Oct-2022), version 1 or 2 depending on facility code.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires ≤20 V absolute max rating and low-impedance path to minimize switching losses.
D (Drain)	High-side switch node	Connected internally to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
S (Source)	Power return / reference	Serves as local ground reference for gate driver; layout must minimize inductance to suppress ringing during switching.

Key Features

Feature	Design Value
ThunderFET® construction	Optimized trench-gate process delivering 0.0372 Ω R_DS(on) (typ.) at 10 V drive - reduces conduction loss by >25 % vs. legacy planar MOSFETs in same package.
100 % R_g and UIS tested	Each unit undergoes gate resistance screening and unclamped inductive switching stress test - ensures robustness in hard-switched flyback or LLC resonant converters.
175 °C T_J rating	Enables full 42 A current derating up to 125 °C case temperature - eliminates need for oversized heatsinks in space-constrained industrial designs.
Drain-connected tab	Direct thermal path from die to PCB or heatsink via exposed DPAK tab - achieves 2.3 °C/W junction-to-case resistance without soldered thermal vias.
Low Q_gd/Q_g ratio	Q_gd = 3.1 nC (typ.) / Q_g = 10.5 nC → 29.5 % - improves Miller immunity and enables stable operation with moderate gate resistors in high-dV/dt environments.

Applications

Boost Converter	LED Backlighting
Use Scenario: High-voltage DC-DC stage in industrial PLC power modules stepping 24 V input to 150 V rail for sensor excitation. IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) boost topology, switching at 250 kHz. Use Value: Low R_DS(on) and 175 °C rating maintain >94 % efficiency at full load across -40 to +85 °C ambient, reducing thermal management complexity.	Use Scenario: Constant-current driver for large-area LCD panel backlight using multi-string parallel LED arrays. IC Role / Device Role / Timing Role: High-side PWM switch controlling current through buck-derived constant-current regulator. Use Value: Fast 68 ns body diode t_rr minimizes cross-conduction loss during dead-time, improving dimming linearity and reducing audible noise.
Synchronous Rectification	DC/AC Inverter
Use Scenario: Secondary-side switch in isolated 48 V–12 V telecom DC/DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: V_SD = 0.85 V (typ.) and low Q_rr = 0.21 μC reduce forward and reverse recovery losses by 40 % vs. 40 V Schottky, increasing efficiency from 91 % to 93.5 %.	Use Scenario: Half-bridge leg in 1 kW solar microinverter converting 100–400 V DC to 230 V AC grid output. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in hard-switched H-bridge, operated with bootstrap gate drive. Use Value: 150 V V_DS rating and 40 A pulsed current support enable safe operation at 350 V DC bus with margin; 175 °C T_J allows compact heatsink design.

Boost Converter

LED Backlighting

Use Scenario: High-voltage DC-DC stage in industrial PLC power modules stepping 24 V input to 150 V rail for sensor excitation.

IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) boost topology, switching at 250 kHz.

Use Value: Low R_DS(on) and 175 °C rating maintain >94 % efficiency at full load across -40 to +85 °C ambient, reducing thermal management complexity.

Use Scenario: Constant-current driver for large-area LCD panel backlight using multi-string parallel LED arrays.

IC Role / Device Role / Timing Role: High-side PWM switch controlling current through buck-derived constant-current regulator.

Use Value: Fast 68 ns body diode t_rr minimizes cross-conduction loss during dead-time, improving dimming linearity and reducing audible noise.

Synchronous Rectification

DC/AC Inverter

Use Scenario: Secondary-side switch in isolated 48 V–12 V telecom DC/DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: V_SD = 0.85 V (typ.) and low Q_rr = 0.21 μC reduce forward and reverse recovery losses by 40 % vs. 40 V Schottky, increasing efficiency from 91 % to 93.5 %.

Use Scenario: Half-bridge leg in 1 kW solar microinverter converting 100–400 V DC to 230 V AC grid output.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in hard-switched H-bridge, operated with bootstrap gate drive.

Use Value: 150 V V_DS rating and 40 A pulsed current support enable safe operation at 350 V DC bus with margin; 175 °C T_J allows compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	150 V, 110 A, TO-220, R_DS(on) = 0.012 Ω @ 10 V - higher current, lower R_DS(on), but larger package and no 175 °C rating.	Requires PCB redesign for TO-220 mounting and additional heatsinking; unsuitable for space-constrained DPAK layouts.	Select when higher current headroom and lower conduction loss justify larger footprint and thermal mass.
IRFR4620TRPBF	200 V, 44 A, TO-252, R_DS(on) = 0.042 Ω @ 10 V - higher voltage rating, similar R_DS(on), but only rated to 150 °C T_J.	Limited to lower ambient or derated current in high-temperature enclosures; not qualified for 175 °C continuous operation.	Select when 200 V blocking is required and thermal environment stays below 125 °C case temperature.

Compared with STP110N15F7 and IRFR4620TRPBF, the SUD80460E-BE3 uniquely balances 150 V rating, TO-252 footprint, 42 A capability, and 175 °C operation - making it optimal for thermally dense industrial power stages where board area and long-term reliability outweigh raw R_DS(on) minimization.

Availability

SUD80460E-BE3 is available at Aetrix Electronics and suitable for boost converters, LED backlighting drivers, synchronous rectifiers, and DC/AC inverters requiring stable component supply, consistent parametric performance, and long-lifecycle availability.

Supply support for SUD80460E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and thermal reliability.

The SUD80460E-BE3 belongs to Vishay's ThunderFET® power MOSFET family, engineered for high-efficiency, high-temperature switching in industrial power conversion, renewable energy, and lighting systems.

FAQ

What is the maximum continuous drain current rating for the SUD80460E-BE3 at 125 °C case temperature?

The SUD80460E-BE3 supports 18.1 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation within its 175 °C maximum junction temperature. The SUD80460E-BE3 maintains stable R_DS(on) performance across this range due to its normalized on-resistance vs. temperature curve.

Does the SUD80460E-BE3 have a fully rated avalanche capability, and what is the single-pulse energy rating?

Yes, the SUD80460E-BE3 is 100 % tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy E_AS = 31.25 mJ at L = 0.1 mH and T_J = 25 °C. This rating confirms robustness against transient overvoltage events in inductive load switching, such as in motor drives or relay control circuits using the SUD80460E-BE3.

What is the gate threshold voltage range for the SUD80460E-BE3, and how does it affect gate drive compatibility?

The SUD80460E-BE3 has a gate-source threshold voltage V_GS(th) of 2–4 V at I_D = 250 μA, confirming reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. This range ensures compatibility with microcontroller GPIOs and dedicated MOSFET drivers without level-shifting, while maintaining sufficient noise margin to prevent spurious turn-on in noisy industrial environments - a key feature of the SUD80460E-BE3.

How does the body diode performance of the SUD80460E-BE3 compare to standard Schottky diodes in synchronous rectification?

The SUD80460E-BE3 body diode exhibits V_SD = 0.85 V (typ.) at I_F = 7 A and t_rr = 68 ns (typ.), enabling lower forward loss than 40 V Schottkys in medium-voltage applications and significantly faster recovery than standard PN diodes. When used as a synchronous rectifier, the SUD80460E-BE3 reduces both conduction and switching losses compared to discrete diodes - especially critical in high-frequency DC/DC converters where the SUD80460E-BE3 operates.

Is the SUD80460E-BE3 lead (Pb)-free and halogen-free, and which compliance standard does it meet?

Yes, the SUD80460E-BE3 is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. It meets RoHS Directive 2011/65/EU and is compliant with JEDEC JS-001-2017 for electrostatic discharge sensitivity (HBM Class 1C). These qualifications ensure environmental compliance and handling safety for automated assembly of the SUD80460E-BE3 in modern electronics manufacturing.

SUD80460E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44.7mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 65.2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD80460E-BE3 FAQ

1.How can I place an order for SUD80460E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD80460E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD80460E-BE3 reliable?

The price and inventory of SUD80460E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD80460E-BE3 is usually 5 days.

3.What payment methods are accepted for SUD80460E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD80460E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD80460E-BE3?

SUD80460E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD80460E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD80460E-BE3?

For technical support, including SUD80460E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD80460E-BE3 requirements.

6.How does Aetrix verify that SUD80460E-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD80460E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD80460E-BE3 meets industry standards.

7.What is the process for return or replacement of SUD80460E-BE3?

All SUD80460E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD80460E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD80460E-BE3 part is unused and in its original packaging.

Return procedure for SUD80460E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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