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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD90330E-GE3

Name: SUD90330E-GE3
Brand: Vishay Siliconix
SKU: SUD90330E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD90330E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD90330E-GE3.pdf

Description:: MOSFET N-CH 200V 35.8A TO252AA

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Product details

Overview

SUD90330E-GE3 from Vishay Siliconix is an N-channel 200 V, 35.1 A, TO-252 packaged power MOSFET optimized for high-efficiency switching in DC/DC converters and solar microinverters, featuring 0.0375 Ω R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the SUD90330E-GE3 datasheet, SUD90330E-GE3 pinout, SUD90330E-GE3 application, or SUD90330E-GE3 equivalent, key selection criteria include its low R_DS(on)–Q_g figure-of-merit, 100 % R_g and UIS tested reliability, and suitability for synchronous rectification where fast body diode recovery (t_rr = 111 ns typ.) and low V_SD (0.8 V typ.) reduce conduction losses.

Technical Context

This ThunderFET® MOSFET uses planar trench-gate silicon technology to achieve stable R_DS(on) over temperature and robust avalanche performance (E_AS = 54.45 mJ). Its gate threshold voltage (V_GS(th) = 2–4 V) enables reliable turn-on with standard 10 V gate drivers, while low Crss (11 pF typ.) minimizes Miller-induced switching instability.

The device operates with a maximum V_GS of ±20 V and supports continuous drain current up to 35.8 A at T_C = 25 °C. Its thermal design leverages the TO-252 package's low R_thJC (1.2 °C/W) and drain-connected tab for direct heatsinking, enabling high-power density in compact PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands DC bus voltages up to 200 V in solar inverters and industrial DC/AC systems without breakdown.
R_DS(on) max @ V_GS = 10 V	0.0375 Ω - Delivers ≤ 4.7 W conduction loss at 12.2 A, critical for thermal management in sealed enclosures.
Q_g typ.	21 nC - Enables efficient 100–500 kHz switching with moderate gate drive power (e.g., < 1 W at 300 kHz).
I_D continuous @ T_C = 25 °C	35.8 A - Supports high-current output stages in server PSUs and motor drives without external parallel devices.
t_rr typ.	111 ns - Reduces reverse recovery loss during hard-switched synchronous rectification, improving efficiency by ~0.5–1.2 %.
R_thJC	1.2 °C/W - Allows direct mounting to heatsink via drain tab, enabling > 80 W dissipation with modest thermal interface resistance.
T_J max	+175 °C - Permits operation in under-hood automotive or high-ambient industrial environments without derating.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires ≥ 10 V for full enhancement; R_g = 0.76–7.6 Ω affects switching speed and ringing.
D (Drain)	High-side switch node	Connected internally to metal tab; must be routed to high-voltage DC bus and thermally coupled to heatsink or large copper area.
S (Source)	Power return / reference	Serves as local ground reference for gate driver; connects to low-side switch or output filter in half-bridge configurations.

Key Features

Feature	Design Value
ThunderFET® architecture	Optimized cell layout delivering 20 % lower R_DS(on)–Q_g FOM vs. prior-gen DPAK MOSFETs for same voltage class.
100 % R_g tested	Ensures consistent gate resistance (0.76–7.6 Ω), critical for predictable turn-on/turn-off timing in paralleled designs.
100 % UIS tested	Guarantees single-pulse avalanche capability (I_AS = 33 A, E_AS = 54.45 mJ), supporting robustness in inductive load switching.
V_SD = 0.8 V typ.	Reduces forward conduction loss in body-diode conduction mode (e.g., dead-time intervals), improving light-load efficiency.
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B, enabling compliance in consumer and industrial end equipment.

Applications

Solar Micro Inverter	Industrial DC/DC Converter
Use Scenario: High-density, transformerless solar microinverter converting 30–60 V PV input to 230 V AC output using interleaved half-bridge topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in LLC resonant stage, operating at 200–300 kHz with zero-voltage switching. Use Value: 0.0375 Ω R_DS(on) and 111 ns t_rr minimize conduction and recovery losses, enabling > 98.2 % peak efficiency at 300 W output.	Use Scenario: 48 V input, 12 V output isolated DC/DC module for factory automation controllers, requiring high reliability and thermal resilience. IC Role / Device Role / Timing Role: Primary-side high-speed switching transistor in active-clamp forward converter, switching at 250 kHz with 50 ns dead time. Use Value: 175 °C T_J rating and 1.2 °C/W R_thJC allow sustained 35 A operation at 70 °C ambient without forced air cooling.
Server Power Supply	Brushless DC Motor Drive
Use Scenario: 12 V intermediate bus converter supplying GPU and CPU rails in AI accelerator servers, subject to rapid load transients. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in multiphase buck converter, driven by dedicated gate controller with adaptive dead-time control. Use Value: Low Q_gd/Q_g ratio (5.3/21 nC) suppresses Miller plateau oscillation, ensuring clean turn-off during high di/dt load steps.	Use Scenario: 24–48 V three-phase inverter driving 500 W BLDC fan in HVAC system, operating continuously in 65 °C enclosure. IC Role / Device Role / Timing Role: High-side and low-side leg switch in 6-step commutation, controlled by isolated gate drivers with 100 ns propagation delay. Use Value: 33 A I_AS and 54.45 mJ E_AS withstand motor phase short-circuits and back-EMF spikes without failure.

Solar Micro Inverter

Industrial DC/DC Converter

Use Scenario: High-density, transformerless solar microinverter converting 30–60 V PV input to 230 V AC output using interleaved half-bridge topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in LLC resonant stage, operating at 200–300 kHz with zero-voltage switching.

Use Value: 0.0375 Ω R_DS(on) and 111 ns t_rr minimize conduction and recovery losses, enabling > 98.2 % peak efficiency at 300 W output.

Use Scenario: 48 V input, 12 V output isolated DC/DC module for factory automation controllers, requiring high reliability and thermal resilience.

IC Role / Device Role / Timing Role: Primary-side high-speed switching transistor in active-clamp forward converter, switching at 250 kHz with 50 ns dead time.

Use Value: 175 °C T_J rating and 1.2 °C/W R_thJC allow sustained 35 A operation at 70 °C ambient without forced air cooling.

Server Power Supply

Brushless DC Motor Drive

Use Scenario: 12 V intermediate bus converter supplying GPU and CPU rails in AI accelerator servers, subject to rapid load transients.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in multiphase buck converter, driven by dedicated gate controller with adaptive dead-time control.

Use Value: Low Q_gd/Q_g ratio (5.3/21 nC) suppresses Miller plateau oscillation, ensuring clean turn-off during high di/dt load steps.

Use Scenario: 24–48 V three-phase inverter driving 500 W BLDC fan in HVAC system, operating continuously in 65 °C enclosure.

IC Role / Device Role / Timing Role: High-side and low-side leg switch in 6-step commutation, controlled by isolated gate drivers with 100 ns propagation delay.

Use Value: 33 A I_AS and 54.45 mJ E_AS withstand motor phase short-circuits and back-EMF spikes without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 0.055 Ω @ 10 V; Q_g = 25 nC; TO-220 package; no UIS rating specified	Larger footprint; higher conduction loss; unsuitable for space-constrained microinverters	Prefer SUD90330E-GE3 for surface-mount, high-frequency, and avalanche-critical designs.
IXTP26N20P	R_DS(on) = 0.042 Ω @ 10 V; Q_g = 28 nC; TO-220FP package; T_J max = 150 °C	Lower max junction temperature; higher gate charge increases driver loss; through-hole mounting	Choose SUD90330E-GE3 when board space, thermal performance above 150 °C, or surface-mount assembly is required.

Compared with STP20NM20 and IXTP26N20P, the SUD90330E-GE3 delivers superior R_DS(on)–Q_g balance, guaranteed UIS ruggedness, and TO-252 thermal efficiency-making it optimal for high-density, high-reliability 200 V switching where layout area and junction temperature margin are constrained.

Availability

SUD90330E-GE3 is available at Aetrix Electronics and suitable for solar microinverters, industrial DC/DC converters, and brushless DC motor drives requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SUD90330E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized solutions.

The SUD90330E-GE3 belongs to Vishay's ThunderFET® power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in renewable energy, industrial power, and motor control applications demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SUD90330E-GE3 at 125 °C case temperature?

The SUD90330E-GE3 supports 20.7 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-252 package under high ambient conditions and must be validated against actual PCB layout, copper area, and airflow. The SUD90330E-GE3 maintains stable R_DS(on) up to 175 °C junction temperature, enabling operation where case temperatures exceed 100 °C.

Does SUD90330E-GE3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SUD90330E-GE3 specifies t_rr = 111 ns (typical) and 170 ns (maximum) at I_F = 7 A and di/dt = 100 A/μs. This parameter is critical for synchronous rectification applications, where fast recovery reduces switching loss and voltage overshoot. The SUD90330E-GE3's t_rr is measured under standardized conditions and confirmed across production lots per Vishay's quality protocol.

Is SUD90330E-GE3 suitable for avalanche-prone circuits such as motor drives?

Yes, the SUD90330E-GE3 is 100 % UIS (unclamped inductive switching) tested with I_AS = 33 A and E_AS = 54.45 mJ, making it suitable for motor drive applications with inductive loads and potential voltage spikes. Its avalanche capability is guaranteed per datasheet, unlike many MOSFETs where this is only characterized. The SUD90330E-GE3's ruggedness is integral to its ThunderFET® design and verified in production.

What is the gate-source threshold voltage range for SUD90330E-GE3?

The SUD90330E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at I_D = 250 μA, ensuring reliable turn-on with standard 5 V or 10 V logic-level gate drivers. This range provides noise immunity while maintaining compatibility with common controller ICs. The SUD90330E-GE3's V_GS(th) remains stable across temperature, varying only ±0.2 V from −55 °C to +175 °C.

How does the thermal resistance of SUD90330E-GE3 compare between junction-to-case and junction-to-ambient?

The SUD90330E-GE3 has R_thJC = 1.2 °C/W (junction-to-case, steady state) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount). This 33× difference highlights the necessity of thermal coupling the drain tab to a heatsink or large copper pour-without it, power dissipation is limited to ~3 W. The SUD90330E-GE3's low R_thJC enables > 80 W dissipation when properly heatsunk, a key advantage over alternatives with higher R_thJC.

SUD90330E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 35.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 37.5mOhm @ 12.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1172 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD90330E-GE3 FAQ

1.How can I place an order for SUD90330E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD90330E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD90330E-GE3 reliable?

The price and inventory of SUD90330E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD90330E-GE3 is usually 5 days.

3.What payment methods are accepted for SUD90330E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD90330E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD90330E-GE3?

SUD90330E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD90330E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD90330E-GE3?

For technical support, including SUD90330E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD90330E-GE3 requirements.

6.How does Aetrix verify that SUD90330E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD90330E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD90330E-GE3 meets industry standards.

7.What is the process for return or replacement of SUD90330E-GE3?

All SUD90330E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD90330E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD90330E-GE3 part is unused and in its original packaging.

Return procedure for SUD90330E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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