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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM10250E-GE3

Name: SUM10250E-GE3
Brand: Vishay Siliconix
SKU: SUM10250E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM10250E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM10250E-GE3.pdf

Description:: MOSFET N-CH 250V 63.5A D2PAK

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Product details

Overview

SUM10250E-GE3 from Vishay Siliconix is an N-channel 250 V, 63.5 A (T_C = 25 °C), TO-263 packaged power MOSFET optimized for high-efficiency switch-mode power supplies, synchronous rectification, and solar microinverters. It delivers R_DS(on) = 0.0247 Ω (typ.) at V_GS = 10 V and supports 175 °C maximum junction temperature operation.

For engineers reviewing the SUM10250E-GE3 datasheet, SUM10250E-GE3 pinout, SUM10250E-GE3 application, or SUM10250E-GE3 equivalent, key selection criteria include its low R_DS(on) × C_oss figure-of-merit, 100 % R_g and UIS testing, and suitability for high-reliability 250 V DC/DC and DC/AC conversion stages requiring stable thermal performance up to 175 °C.

Technical Context

This device employs a planar silicon process tuned for minimum R_DS(on) × C_oss FOM, enabling high-frequency switching with reduced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2–4 V) and transconductance (g_fs = 63 S typ.) support robust drive in hard-switched topologies.

The MOSFET integrates a fast body diode with t_rr = 212 ns (typ.) and Q_rr = 1.6 μC (typ.), making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI. Thermal design is enabled by R_thJC = 0.4 °C/W and R_thJA = 40 °C/W (PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Maximum blocking voltage for primary-side switching in 200–240 V AC-input SMPS and solar string inverters.
R_DS(on)	0.0247 Ω (typ.) at V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current DC/DC output stages.
I_D (cont.)	63.5 A at T_C = 25 °C - Supports high-power motor drives and UPS inverters without parallel devices.
Q_g	57.6 nC (typ.) - Determines gate drive power requirement; enables efficient 100–300 kHz operation with standard gate drivers.
T_J(max)	+175 °C - Allows operation in thermally constrained environments such as enclosed industrial power modules.
R_thJC	0.4 °C/W - Enables direct heatsink mounting for >300 W continuous dissipation with minimal thermal interface resistance.
E_AS	180 mJ - Specifies single-pulse avalanche energy handling, supporting robustness in inductive load switching and fault conditions.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. #71198 (Rev. 28-Oct-2024), thick-lead variant (SUM-series).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≤ ±20 V drive; 1.5–5 Ω gate resistance ensures stable turn-on/turn-off timing.
D	Drain	Main high-side current path; electrically and thermally connected to exposed metal tab; must be routed to heatsink or large copper pour.
S	Source	Reference node for gate drive and current sensing; connects to low-side return path; defines common reference for V_GS control.

Key Features

Feature	Design Value
ThunderFET® architecture	Optimized R_DS(on) × C_oss FOM reduces total switching loss in high-frequency SMPS and Class D amplifiers.
100 % R_g tested	Ensures consistent gate charge and switching timing across production lots-critical for paralleled operation and timing-critical converters.
100 % UIS tested	Validates ruggedness under unclamped inductive switching stress, essential for motor drive and inverter applications.
Body diode t_rr = 212 ns	Minimizes reverse recovery loss and associated voltage spikes during synchronous rectification in LLC and phase-shifted full-bridge topologies.
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting environmentally compliant industrial and renewable energy systems.

Applications

Uninterruptible Power Supplies (UPS)	Solar Microinverters
Use Scenario: High-efficiency DC/AC inversion stage in line-interactive and online UPS systems handling 1–3 kVA loads. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in half-bridge or full-bridge inverter leg, operating at 20–100 kHz. Use Value: Low R_DS(on) minimizes conduction loss during battery discharge; 175 °C rating sustains reliability under sustained overload or ambient temperature rise.	Use Scenario: DC/AC conversion in residential solar microinverters with 250 V input strings and 230 V AC output. IC Role / Device Role / Timing Role: High-side switch in interleaved flyback or H6 inverter topology, managing bidirectional energy flow. Use Value: Fast body diode and low Q_g reduce switching loss and EMI generation, improving system-level efficiency above 96.5 %.
Class D Audio Amplifiers	Industrial Motor Drives
Use Scenario: Output stage in high-power (>500 W) audio amplifiers requiring low distortion and high damping factor. IC Role / Device Role / Timing Role: Half-bridge power switch modulating audio signal at 300–500 kHz carrier frequency. Use Value: Tight V_GS(th) distribution (2–4 V) and low Crss ensure precise PWM fidelity and minimal dead-time-induced crossover distortion.	Use Scenario: Inverter leg switch in 3-phase BLDC or induction motor drives rated up to 5 kW. IC Role / Device Role / Timing Role: High-current switching element in IGBT replacement configurations, driven by isolated gate drivers. Use Value: 150 A pulsed current rating and 180 mJ E_AS withstand motor stall and regenerative braking events without failure.

Uninterruptible Power Supplies (UPS)

Solar Microinverters

Use Scenario: High-efficiency DC/AC inversion stage in line-interactive and online UPS systems handling 1–3 kVA loads.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in half-bridge or full-bridge inverter leg, operating at 20–100 kHz.

Use Value: Low R_DS(on) minimizes conduction loss during battery discharge; 175 °C rating sustains reliability under sustained overload or ambient temperature rise.

Use Scenario: DC/AC conversion in residential solar microinverters with 250 V input strings and 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in interleaved flyback or H6 inverter topology, managing bidirectional energy flow.

Use Value: Fast body diode and low Q_g reduce switching loss and EMI generation, improving system-level efficiency above 96.5 %.

Class D Audio Amplifiers

Industrial Motor Drives

Use Scenario: Output stage in high-power (>500 W) audio amplifiers requiring low distortion and high damping factor.

IC Role / Device Role / Timing Role: Half-bridge power switch modulating audio signal at 300–500 kHz carrier frequency.

Use Value: Tight V_GS(th) distribution (2–4 V) and low Crss ensure precise PWM fidelity and minimal dead-time-induced crossover distortion.

Use Scenario: Inverter leg switch in 3-phase BLDC or induction motor drives rated up to 5 kW.

IC Role / Device Role / Timing Role: High-current switching element in IGBT replacement configurations, driven by isolated gate drivers.

Use Value: 150 A pulsed current rating and 180 mJ E_AS withstand motor stall and regenerative braking events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK25Z	R_DS(on) = 0.19 Ω (max) at V_GS = 10 V - 6× higher than SUM10250E-GE3; Q_g = 40 nC (typ.) - lower but higher conduction loss dominates.	Better suited for lower-current (<15 A), cost-sensitive applications where thermal margin is abundant.	Select SUM10250E-GE3 when system-level efficiency >95 % or junction temperature >150 °C is required; STW20NK25Z only if board space and BOM cost constrain priority over thermal performance.
IXFH30N25X3	R_DS(on) = 0.042 Ω (max) at V_GS = 10 V - ~70 % higher; C_oss = 120 pF (typ.) - significantly lower, yielding different switching trade-offs.	Preferred in resonant topologies (LLC, ZVS) where low C_oss outweighs R_DS(on) penalty.	Choose SUM10250E-GE3 for hard-switched applications demanding lowest R_DS(on); IXFH30N25X3 only if zero-voltage switching is guaranteed and layout allows tighter gate drive control.

Compared with STW20NK25Z and IXFH30N25X3, SUM10250E-GE3 delivers the lowest R_DS(on) in its 250 V class, enabling higher current density and cooler operation in thermally limited enclosures-making it optimal for compact, high-efficiency UPS, solar, and motor drive designs where thermal headroom is constrained.

Availability

SUM10250E-GE3 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar microinverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free/halogen-free sourcing.

Supply support for SUM10250E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SUM series targets high-efficiency, high-reliability power conversion applications-including server PSUs, renewable energy inverters, and industrial motor controls-with emphasis on low FOM, ruggedness, and extended temperature capability.

FAQ

What is the maximum continuous drain current rating for SUM10250E-GE3 at 70 °C case temperature?

The SUM10250E-GE3 has a continuous drain current rating of 36.6 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package under real-world PCB mounting conditions and must be used in thermal design calculations alongside R_thJC = 0.4 °C/W to ensure safe operation below 175 °C junction temperature.

Does SUM10250E-GE3 support gate drive at 5 V logic level?

No-SUM10250E-GE3 is not fully enhanced at 5 V. Its gate threshold voltage range is 2–4 V, but R_DS(on) is only guaranteed at V_GS = 7.5 V (0.032 Ω max) and V_GS = 10 V (0.031 Ω max). Driving SUM10250E-GE3 with 5 V may result in excessive conduction loss and thermal runaway; a minimum 7.5 V gate drive is recommended for reliable operation.

What is the typical reverse recovery time (t_rr) of the body diode in SUM10250E-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SUM10250E-GE3 is 212 ns, measured at I_F = 30 A and di/dt = 100 A/μs. This value is critical for synchronous rectification efficiency and EMI performance; the corresponding Q_rr is 1.6 μC (typ.), enabling accurate loss modeling in high-frequency converters.

Is SUM10250E-GE3 suitable for avalanche-rated applications?

Yes-SUM10250E-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 180 mJ. This makes it suitable for applications involving inductive loads, such as motor drives and relay drivers, where transient voltage spikes may exceed V_DS rating. However, repetitive avalanche operation is not guaranteed and must be avoided in design.

What is the gate-to-source leakage current specification for SUM10250E-GE3?

The gate-to-source leakage current (I_GSS) for SUM10250E-GE3 is ±250 nA maximum at V_GS = ±20 V and T_J = 25 °C, as specified in the Static Characteristics table. This low leakage supports stable gate biasing in high-impedance drive circuits and ensures minimal power loss in always-on control configurations.

SUM10250E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 63.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3002 pF @ 125 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM10250E-GE3 FAQ

1.How can I place an order for SUM10250E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM10250E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM10250E-GE3 reliable?

The price and inventory of SUM10250E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM10250E-GE3 is usually 5 days.

3.What payment methods are accepted for SUM10250E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM10250E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM10250E-GE3?

SUM10250E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM10250E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM10250E-GE3?

For technical support, including SUM10250E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM10250E-GE3 requirements.

6.How does Aetrix verify that SUM10250E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM10250E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM10250E-GE3 meets industry standards.

7.What is the process for return or replacement of SUM10250E-GE3?

All SUM10250E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM10250E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM10250E-GE3 part is unused and in its original packaging.

Return procedure for SUM10250E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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