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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM110N03-04P-E3

Name: SUM110N03-04P-E3
Brand: Vishay Siliconix
SKU: SUM110N03-04P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM110N03-04P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM110N03-04P-E3.pdf

Description:: MOSFET N-CH 30V 110A TO263

Quantity:: RFQ Add To RFQ list

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Inventory:9,393

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Product details

Overview

SUM110N03-04P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 110 A continuous drain current at TC = 25 °C, and 0.0042 Ω rDS(on) at VGS = 10 V. It features a TO-263 package, 175 °C maximum junction temperature, and is optimized for low-side synchronous rectifier operation in high-efficiency DC/DC converters.

For engineers reviewing the SUM110N03-04P-E3 datasheet, SUM110N03-04P-E3 pinout, SUM110N03-04P-E3 application, or SUM110N03-04P-E3 equivalent, key selection criteria include its 0.0065 Ω rDS(on) at 4.5 V gate drive, 1.25 °C/W junction-to-case thermal resistance, and 100% Rg tested gate resistance specification - critical for fast-switching, thermally constrained power stages.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with enhanced thermal performance in a surface-mount TO-263 (D²PAK) package. Its gate threshold voltage (1–3 V) and low input capacitance (5100 pF Ciss) support robust 4.5 V logic-level drive compatibility while maintaining fast switching transitions (td(on) = 12–20 ns, tf = 10–15 ns).

The device is characterized for operation up to 175 °C junction temperature and includes guaranteed avalanche energy rating (151 mJ) and pulsed drain current capability (300 A). Its source-drain diode exhibits 1.2–1.5 V forward voltage at 30 A and 40–80 ns reverse recovery time - enabling efficient synchronous rectification without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
r_DS(on) @ V_GS = 10 V	0.0042 Ω - Enables <1 W conduction loss at 110 A, critical for high-current POL converters
r_DS(on) @ V_GS = 4.5 V	0.0065 Ω - Supports direct drive from standard 5 V PWM controllers without level-shifting
I_D (continuous, T_C = 25 °C)	110 A - Sustains full-load current in compact, heatsinked PCB layouts
R_thJC	1.25 °C/W - Allows precise junction temperature estimation using case temperature measurement
Q_g	40–60 nC - Determines gate driver power requirement and switching loss trade-off at 500 kHz–1 MHz
E_AR	151 mJ - Specifies single-pulse avalanche ruggedness under inductive turn-off stress

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected), lead-free finish per SUM110N03-04P-E3 ordering designation.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (center)	Drain (D)	Electrically connected to exposed copper pad; primary heat path and high-current return node
Pin 1	Source (S)	Low-side reference node; connects to ground plane and synchronous rectifier control circuitry
Pin 3	Gate (G)	High-impedance control terminal; requires <1.7 Ω gate resistance for stable turn-on/turn-off

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers industry-leading rDS(on) × Qg figure-of-merit for 30 V MOSFETs, reducing total switching + conduction loss
100 % Rg tested	Ensures gate resistance falls within 0.5–1.7 Ω range, enabling predictable gate drive timing and EMI control
Optimized for low-side synchronous rectifier operation	Combines low V_SD (1.2–1.5 V) and fast trr (40–80 ns) to replace Schottky diodes without shoot-through risk
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient industrial environments without derating
New package with low thermal resistance	R_thJC = 1.25 °C/W enables >90 W power dissipation with minimal heatsink area on FR-4 PCB

Applications

Server VRM Power Stage	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 4.5 V gate drive from integrated controller. Use Value: 0.0065 Ω rDS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 30 V MOSFETs, improving VRM efficiency at 100+ A loads.	Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC module for PLC I/O power rails. IC Role / Device Role / Timing Role: Primary low-side switch in secondary-side synchronous rectification stage. Use Value: 151 mJ avalanche energy rating ensures reliability during output short-circuit events without external clamping.
Telecom Rectifier Module	Automotive ADAS Power Supply
Use Scenario: 48 V to 12 V intermediate bus converter in telecom shelf power systems. IC Role / Device Role / Timing Role: High-current, thermally stressed low-side FET in hard-switched synchronous buck topology. Use Value: 1.25 °C/W R_thJC allows direct thermal coupling to chassis, enabling 110 A operation without forced air cooling.	Use Scenario: Power supply for radar sensor or camera ECU requiring AEC-Q101-compliant components. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in 12 V input buck converter powering FPGA or SoC. Use Value: 175 °C TJ rating supports operation in engine bay-adjacent locations where ambient exceeds 105 °C.

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 4.5 V gate drive from integrated controller.

Use Value: 0.0065 Ω rDS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 30 V MOSFETs, improving VRM efficiency at 100+ A loads.

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Primary low-side switch in secondary-side synchronous rectification stage.

Use Value: 151 mJ avalanche energy rating ensures reliability during output short-circuit events without external clamping.

Telecom Rectifier Module

Automotive ADAS Power Supply

Use Scenario: 48 V to 12 V intermediate bus converter in telecom shelf power systems.

IC Role / Device Role / Timing Role: High-current, thermally stressed low-side FET in hard-switched synchronous buck topology.

Use Value: 1.25 °C/W R_thJC allows direct thermal coupling to chassis, enabling 110 A operation without forced air cooling.

Use Scenario: Power supply for radar sensor or camera ECU requiring AEC-Q101-compliant components.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in 12 V input buck converter powering FPGA or SoC.

Use Value: 175 °C TJ rating supports operation in engine bay-adjacent locations where ambient exceeds 105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF110N03LPM	rDS(on) = 0.0038 Ω @ 10 V; RthJC = 1.4 °C/W; no 100% Rg test	Lower conduction loss but higher thermal resistance; less consistent gate drive behavior	Prefer when absolute minimum rDS(on) dominates over gate timing predictability and thermal margin
STL220N3LLH6	rDS(on) = 0.0045 Ω @ 10 V; 175 °C TJ; TO-263; Qg = 52 nC	Similar thermal and electrical specs; slightly higher Qg increases gate drive loss at >1 MHz	Prefer when STMicroelectronics supply chain alignment or automotive qualification (AEC-Q101) is required

Compared with IRF110N03LPM and STL220N3LLH6, SUM110N03-04P-E3 offers superior gate resistance consistency (100% tested), lower RthJC (1.25 vs. 1.4–1.5 °C/W), and tighter rDS(on) distribution at 4.5 V - making it optimal for high-reliability, high-frequency synchronous rectifiers where thermal management and drive stability are critical.

Availability

SUM110N03-04P-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifier modules requiring stable component supply, extended temperature operation, and high-current synchronous rectification capability.

Supply support for SUM110N03-04P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SUM110N03-04P-E3 belongs to Vishay's TrenchFET® Gen IV low-voltage power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in next-generation power supplies where thermal density and gate drive simplicity are paramount.

FAQ

What is the maximum continuous drain current rating for SUM110N03-04P-E3 at 100 °C case temperature?

The SUM110N03-04P-E3 supports 88 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be applied when ambient or board-level thermal conditions prevent the case from remaining at 25 °C. Designers should verify junction temperature using RthJC = 1.25 °C/W and ensure TJ ≤ 175 °C.

Does SUM110N03-04P-E3 support 4.5 V gate drive in practical applications?

Yes, SUM110N03-04P-E3 is fully characterized for 4.5 V gate drive, with rDS(on) = 0.0065 Ω at ID = 20 A and VGS = 4.5 V. Its gate threshold voltage (1–3 V) ensures strong enhancement-mode turn-on, and its low Qg (40–60 nC) minimizes driver losses - making it suitable for direct interface with 5 V microcontrollers, PWM ICs, and digital power controllers without level-shifting.

What is the significance of "100 % Rg tested" for SUM110N03-04P-E3?

"100 % Rg tested" means every SUM110N03-04P-E3 unit undergoes production testing to confirm gate resistance falls within 0.5–1.7 Ω. This ensures consistent gate charging/discharging behavior across units, critical for predictable switching timing, reduced EMI variation, and reliable parallel operation - unlike non-tested MOSFETs where Rg can vary widely and impact system-level timing margins.

Can SUM110N03-04P-E3 be used in avalanche-rated applications?

Yes, SUM110N03-04P-E3 is rated for repetitive avalanche energy of 151 mJ (L = 0.1 mH) and avalanche current of 55 A. These parameters are validated per JEDEC standards and enable use in circuits subject to inductive switching stress - such as freewheeling paths in motor drives or unregulated flyback snubbers - provided SOA limits and pulse conditions (duty cycle ≤ 1 %, pulse width ≤ 300 µs) are strictly observed.

Is SUM110N03-04P-E3 RoHS-compliant and lead-free?

Yes, SUM110N03-04P-E3 is explicitly designated as lead-free in its ordering information ("SUM110N03-04P-E3 (Lead free)") and complies with RoHS Directive 2011/65/EU. The "E3" suffix denotes lead-free termination with matte tin plating, qualified for reflow soldering per J-STD-020, and compatible with standard Pb-free assembly processes.

SUM110N03-04P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM110N03-04P-E3 FAQ

1.How can I place an order for SUM110N03-04P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM110N03-04P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM110N03-04P-E3 reliable?

The price and inventory of SUM110N03-04P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM110N03-04P-E3 is usually 5 days.

3.What payment methods are accepted for SUM110N03-04P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM110N03-04P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM110N03-04P-E3?

SUM110N03-04P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM110N03-04P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM110N03-04P-E3?

For technical support, including SUM110N03-04P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM110N03-04P-E3 requirements.

6.How does Aetrix verify that SUM110N03-04P-E3 is sourced from the original manufacturer or authorized distributors?

All SUM110N03-04P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM110N03-04P-E3 meets industry standards.

7.What is the process for return or replacement of SUM110N03-04P-E3?

All SUM110N03-04P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM110N03-04P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM110N03-04P-E3 part is unused and in its original packaging.

Return procedure for SUM110N03-04P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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