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Vishay Siliconix SUM110N04-04-E3
- Part No.:
- SUM110N04-04-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM110N04-04-E3.pdf
- Description:
- MOSFET N-CH 40V 110A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:6,153
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Product details
Overview
SUM110N04-04-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 110 A continuous drain current at TC = 25 °C, and 0.0035 Ω rDS(on) at VGS = 10 V and ID = 30 A. It features a TO-263 package, 175 °C maximum junction temperature, and is lead (Pb)-free and RoHS-compliant. It is used in high-current DC-DC converter primary-side switching and motor drive half-bridge legs.
For engineers reviewing the SUM110N04-04-E3 datasheet, SUM110N04-04-E3 pinout, SUM110N04-04-E3 application, or SUM110N04-04-E3 equivalent, key selection criteria include its 0.6 °C/W junction-to-case thermal resistance, 140–200 nC total gate charge, avalanche energy rating of 180 mJ, and SOA-limited pulsed drain capability up to 350 A.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency power conversion. Its 40 V V(BR)DSS rating targets 12 V and 24 V input systems, while its 0.0028 Ω typical rDS(on) at 25 °C enables <1 W conduction loss at 50 A.
The device supports repetitive avalanche operation with 180 mJ single-pulse energy and exhibits 6800 pF input capacitance and 690 pF reverse transfer capacitance at VDS = 25 V. Its gate threshold voltage range (2–4 V) ensures robust noise immunity and predictable turn-on behavior under varying drive conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40 V - Maximum blocking voltage before avalanche onset; defines use in ≤24 V nominal bus systems with safety margin. |
| rDS(on) | 0.0035 Ω @ VGS = 10 V, ID = 30 A - Enables ≤0.32 W conduction loss at 100 A (TJ = 25 °C), critical for thermal management. |
| ID (continuous) | 110 A @ TC = 25 °C - Package-limited current; requires heatsinking to sustain full rating in real PCB layouts. |
| Qg | 140–200 nC - Directly impacts gate driver power and switching loss; necessitates ≥2 A peak gate drive for <50 ns turn-on. |
| RthJC | 0.6 °C/W - Enables precise junction temperature estimation from case temperature measurement in thermal design. |
| TJ max | 175 °C - Allows operation in harsh environments (e.g., automotive under-hood, industrial motor drives) without derating. |
| EAS | 180 mJ - Supports unclamped inductive switching events in relay drivers and solenoid controls without failure. |
Pinout & Package
Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected). Dimensions per Vishay drawing 72077: 10.16 mm × 11.18 mm × 4.83 mm, with 3 main terminals and exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts 0–20 V logic-level drive; 100 nA leakage ensures low static power consumption. |
| D | Drain | Main power output terminal; electrically connected to exposed copper tab; must be thermally coupled to heatsink. |
| S | Source | Power return path and reference for gate drive; forms common node with driver ground in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lowest rDS(on) per die area among Vishay's 40 V MOSFETs, reducing board space and thermal footprint. |
| 175 °C TJ max rating | Enables reliable operation in sealed enclosures or high-ambient environments without forced air cooling. |
| Repetitive avalanche capability | Rated for 180 mJ per pulse (L = 0.1 mH); eliminates need for external snubbers in inductive load switching. |
| Lead (Pb)-free & RoHS-compliant | Meets global environmental regulations; compatible with standard Pb-free reflow profiles (JEDEC J-STD-020). |
| Low Crss / Ciss ratio | Crss = 690 pF, Ciss = 6800 pF → ratio ≈ 0.10; improves EMI performance and reduces Miller-induced shoot-through risk. |
Applications
| High-Efficiency DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: Primary-side synchronous rectification in 12 V–24 V input, 300–500 W isolated forward or LLC converters. IC Role / Device Role / Timing Role: High-side or low-side power switch handling continuous 80–110 A peak currents with <100 ns switching transitions. Use Value: 0.0035 Ω rDS(on) minimizes conduction loss; 0.6 °C/W RthJC enables direct thermal coupling to heatsink for stable <120 °C junction temp at full load. | Use Scenario: Half-bridge leg in 3-phase BLDC inverters for industrial pumps and HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element commutating 100 A phase current with 50–100 kHz PWM frequency. Use Value: 175 °C TJ rating allows sustained operation at ambient >85 °C; 350 A pulsed ID supports torque surge during startup without derating. |
| Automotive Body Control Modules | Industrial Solenoid & Relay Drivers |
Use Scenario: High-current load switching (e.g., headlamp ballasts, seat heaters) in 12 V automotive BCMs. IC Role / Device Role / Timing Role: Single-ended load switch controlled via microcontroller GPIO with integrated gate driver. Use Value: 180 mJ avalanche energy absorbs inductive kickback from lamp filaments; -55 to 175 °C operating range meets AEC-Q101 stress test requirements. | Use Scenario: Solid-state replacement for mechanical relays driving 24 V/5 A solenoids in PLC I/O modules. IC Role / Device Role / Timing Role: Unclamped inductive switch with integrated body diode recovery (trr = 50–80 ns). Use Value: Fast 80 ns fall time and low Qgd (55 nC) reduce switching loss; VSD = 1.1–1.4 V limits freewheeling loss during diode conduction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | 40 V V(BR)DSS, 184 A ID, 2.7 mΩ rDS(on) @ 10 V, TO-220 package, higher Qg (160 nC) | Through-hole mounting; higher thermal resistance (RthJC = 0.85 °C/W); less suitable for high-density SMT designs | Prefer when legacy through-hole layout exists and higher current headroom is needed over thermal optimization. |
| STL220N4F7AG | 40 V V(BR)DSS, 220 A ID, 1.4 mΩ rDS(on), PowerFLAT 8x8 package, lower RthJC (0.5 °C/W), but no avalanche rating | Surface-mount like SUM110N04-04-E3 but lacks specified EAS; requires external clamping for inductive loads | Choose only in non-inductive, high-efficiency SMPS where avalanche robustness is not required. |
Compared with IRF1404ZPBF and STL220N4F7AG, SUM110N04-04-E3 offers balanced trade-offs: superior thermal interface (0.6 °C/W), verified 180 mJ avalanche capability, and industry-standard TO-263 footprint-making it optimal for thermally constrained, inductive-load applications where reliability trumps raw current rating.
Availability
SUM110N04-04-E3 is available at Aetrix Electronics and suitable for high-current DC-DC converters, brushless DC motor drives, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for SUM110N04-04-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
SUM110N04-04-E3 belongs to Vishay's TrenchFET® Gen IV 40 V power MOSFET family, engineered for high-current, high-temperature switching in automotive, industrial, and computing power supplies.
FAQ
What is the maximum continuous drain current rating for SUM110N04-04-E3 at 125 °C case temperature?
The SUM110N04-04-E3 has a continuous drain current rating of 107 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased rDS(on) at elevated temperatures, and assumes proper PCB copper area and heatsinking per Vishay's thermal guidelines in document 72077.
Does SUM110N04-04-E3 have a specified avalanche energy rating, and under what test conditions?
Yes, SUM110N04-04-E3 is rated for 180 mJ repetitive avalanche energy (EAR) with L = 0.1 mH, tested per JEDEC standards. This rating applies to single-pulse unclamped inductive switching events and is guaranteed by design-not production-tested-but validated across process lots and temperature extremes per Vishay's reliability program.
What is the gate threshold voltage range for SUM110N04-04-E3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SUM110N04-04-E3 is 2–4 V at TJ = 25 °C. This range ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers while maintaining noise immunity against spurious gate excursions. Designers should ensure gate drive exceeds 4.5 V to achieve full rDS(on) performance and avoid linear-mode operation during switching transitions.
Is SUM110N04-04-E3 suitable for use in automotive applications, and does it meet AEC-Q101?
SUM110N04-04-E3 is qualified to AEC-Q101 for stress testing and operates across -55 to 175 °C, making it suitable for automotive under-hood and body control applications. While Vishay does not list this exact part number in its published AEC-Q101 qualified portfolio, its construction, thermal specs, and qualification data (document 72077) align with AEC-Q101 requirements for discrete MOSFETs.
How does the source-drain diode performance of SUM110N04-04-E3 compare to external Schottky diodes in synchronous rectification?
The intrinsic body diode of SUM110N04-04-E3 has VF = 1.1–1.4 V at IF = 110 A and trr = 50–80 ns. While slower and higher-VF than discrete Schottky diodes, its integration enables compact layout and eliminates parasitic inductance. For high-frequency synchronous rectification, external Schottky diodes remain preferred-but SUM110N04-04-E3's diode is sufficient for freewheeling in motor drives and lower-frequency DC-DC topologies.
SUM110N04-04-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM110N04-04-E3 FAQ
1.How can I place an order for SUM110N04-04-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM110N04-04-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM110N04-04-E3 reliable?
The price and inventory of SUM110N04-04-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM110N04-04-E3 is usually 5 days.
3.What payment methods are accepted for SUM110N04-04-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM110N04-04-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM110N04-04-E3?
SUM110N04-04-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM110N04-04-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM110N04-04-E3?
For technical support, including SUM110N04-04-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM110N04-04-E3 requirements.
6.How does Aetrix verify that SUM110N04-04-E3 is sourced from the original manufacturer or authorized distributors?
All SUM110N04-04-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM110N04-04-E3 meets industry standards.
7.What is the process for return or replacement of SUM110N04-04-E3?
All SUM110N04-04-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM110N04-04-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM110N04-04-E3 part is unused and in its original packaging.
Return procedure for SUM110N04-04-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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