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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM110N04-05H-E3

Name: SUM110N04-05H-E3
Brand: Vishay Siliconix
SKU: SUM110N04-05H-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM110N04-05H-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM110N04-05H-E3.pdf

Description:: MOSFET N-CH 40V 110A TO263

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Product details

Overview

SUM110N04-05H-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 40 V V_DS, 110 A continuous drain current at T_C = 25 °C, and 0.0053 Ω r_DS(on) at V_GS = 10 V - designed for high-current DC-DC converters, motor drives, and industrial power switching where 175 °C junction operation is required.

For engineers reviewing the SUM110N04-05H-E3 datasheet, SUM110N04-05H-E3 pinout, SUM110N04-05H-E3 application, or SUM110N04-05H-E3 equivalent, key selection criteria include its 95 nC total gate charge, 1 Ω junction-to-case thermal resistance, TO-263 package with G-D-S terminal layout, and guaranteed high-threshold behavior up to 175 °C.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and robust avalanche capability (125 mJ, L = 0.1 mH). Its 3.4–5.0 V gate threshold ensures reliable turn-on margin under high-temperature bias and reduces risk of spurious conduction in noisy environments.

The device delivers 150 W maximum power dissipation at T_C = 25 °C with a 1 °C/W R_thJC, enabling high-power density designs when mounted on copper-clad PCBs or heatsinks. Dynamic parameters-including 6700 pF C_iss, 320 pF C_rss, and 20–30 ns t_d(on)-support efficient hard-switching up to ~100 kHz in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	40 V - supports 36 V nominal bus systems with 10 % margin for transients
r_DS(on)	0.0053 Ω @ V_GS = 10 V, I_D = 30 A - yields ≤ 4.7 W conduction loss at 100 A
I_D Continuous	110 A @ T_C = 25 °C - requires thermal management for sustained >70 A operation
Q_g Total	95 nC - determines gate driver power requirement and switching loss trade-off
R_thJC	1 °C/W - enables direct heatsink mounting for high-power thermal path optimization
T_J Max	175 °C - qualified for automotive under-hood and industrial ambient conditions
V_GS(th)	3.4–5.0 V - provides noise immunity and stable turn-on across temperature

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected), 3-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control input; requires ≥10 V drive for full enhancement; 1.7 Ω internal gate resistance
D	Drain	Main power output node; electrically connected to exposed metal tab for thermal/EMI grounding
S	Source	Power return reference; forms common node with gate driver ground in high-side configurations

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low r_DS(on) without sacrificing ruggedness or gate charge efficiency
175 °C rated junction	Validated operation at extreme ambient temperatures without derating in sealed enclosures
High V_GS(th) stability	Maintains ≥3.4 V threshold up to 175 °C - prevents thermal runaway in parallel configurations
125 mJ avalanche energy	Withstands repetitive inductive switching stress (L = 0.1 mH) without failure
RoHS-compliant, Pb-free	Meets JEDEC J-STD-609A Class 3 marking and reflow profile requirements

Applications

Motor Drive Inverter	Industrial DC-DC Converter
Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in factory automation. IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 300 A pulsed. Use Value: 0.0053 Ω r_DS(on) minimizes I²R losses during 100 % duty cycle commutation phases.	Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated forward converter. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–200 kHz with tight dead-time control. Use Value: 95 nC Q_g and 320 pF C_rss enable fast, low-loss transitions while maintaining EMI compliance.
Server VRM Phase Leg	EV Onboard Charger
Use Scenario: Multiphase buck converter delivering 100+ A to CPU/GPU cores in datacenter servers. IC Role / Device Role / Timing Role: High-current phase-leg FET with paralleled layout and Kelvin source routing. Use Value: 1 Ω R_thJC allows direct heatsink attachment to maintain <100 °C T_J under full load.	Use Scenario: AC/DC PFC stage and DC/DC isolation stage in 6.6 kW OBC for light-duty EVs. IC Role / Device Role / Timing Role: Main switching device in boost PFC and LLC resonant converter primary side. Use Value: 175 °C rating and 125 mJ avalanche energy support unattended operation in thermally constrained enclosures.

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 300 A pulsed.

Use Value: 0.0053 Ω r_DS(on) minimizes I²R losses during 100 % duty cycle commutation phases.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated forward converter.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–200 kHz with tight dead-time control.

Use Value: 95 nC Q_g and 320 pF C_rss enable fast, low-loss transitions while maintaining EMI compliance.

Server VRM Phase Leg

EV Onboard Charger

Use Scenario: Multiphase buck converter delivering 100+ A to CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: High-current phase-leg FET with paralleled layout and Kelvin source routing.

Use Value: 1 Ω R_thJC allows direct heatsink attachment to maintain <100 °C T_J under full load.

Use Scenario: AC/DC PFC stage and DC/DC isolation stage in 6.6 kW OBC for light-duty EVs.

IC Role / Device Role / Timing Role: Main switching device in boost PFC and LLC resonant converter primary side.

Use Value: 175 °C rating and 125 mJ avalanche energy support unattended operation in thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	40 V, 110 A, r_DS(on) = 0.0045 Ω @ 10 V, but only rated to 175 °C with reduced SOA at high T_J	Lower gate charge (71 nC), but lower avalanche energy (85 mJ) and no explicit high-T_J V_GS(th) validation	Preferable where gate drive loss dominates; avoid in high-temperature avalanche-prone circuits
STL220N4LF8AG	40 V, 120 A, r_DS(on) = 0.0038 Ω @ 10 V, but TO-220FP package limits thermal performance (R_thJC = 1.5 °C/W)	Higher current rating but higher R_thJC and smaller die area - less robust under repetitive avalanche	Choose for cost-sensitive, lower-power-density designs; not recommended for >100 W continuous conduction mode

Compared with IRFB4115PBF and STL220N4LF8AG, SUM110N04-05H-E3 offers superior thermal resistance (1 °C/W), validated 175 °C V_GS(th) stability, and higher avalanche ruggedness - making it optimal for thermally constrained, high-reliability industrial and automotive power stages.

Availability

SUM110N04-05H-E3 is available at Aetrix Electronics and suitable for motor drives, server VRMs, and onboard chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing traceability.

Supply support for SUM110N04-05H-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal efficiency, and reliability.

The SUMx10N04 series targets high-current, high-temperature power conversion - engineered for applications demanding low r_DS(on), high avalanche tolerance, and consistent gate threshold behavior across extended temperature ranges.

FAQ

What is the maximum continuous drain current rating for SUM110N04-05H-E3 at 125 °C case temperature?

The SUM110N04-05H-E3 is rated for 70 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects increased r_DS(on) (0.008 Ω at 125 °C) and thermal limitations - design margins must account for PCB copper area, airflow, and heatsink interface resistance to sustain this current reliably.

Does SUM110N04-05H-E3 support gate drive voltages below 10 V?

Yes - SUM110N04-05H-E3 has a minimum V_GS(th) of 3.4 V and remains fully enhanced down to ~6 V, though r_DS(on) increases significantly below 10 V (e.g., 0.008 Ω at V_GS = 8 V). For optimal efficiency, 10 V gate drive is recommended; 8 V may be used in space-constrained designs where moderate conduction loss is acceptable.

Is SUM110N04-05H-E3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?

Yes - SUM110N04-05H-E3 is well-suited for synchronous rectification in 48 V → 12 V converters due to its low 0.0053 Ω r_DS(on), 95 nC Q_g, and 175 °C rating. Its body diode V_SD of 0.9–1.5 V at 30 A supports efficient freewheeling, and the 1 Ω R_thJC enables effective thermal management in high-duty-cycle operation.

What is the safe operating area (SOA) limitation for SUM110N04-05H-E3 at DC operation?

At DC operation and T_C = 25 °C, the SUM110N04-05H-E3 SOA is limited by its 150 W maximum power dissipation and 0.0053 Ω r_DS(on), yielding a practical DC voltage/current boundary of ~30 V × 5 A or ~10 V × 30 A. The SOA curve in Figure 10 of the datasheet (Document 73131) must be consulted for precise derating at elevated case temperatures or pulse widths.

How does the avalanche capability of SUM110N04-05H-E3 compare to standard 40 V MOSFETs?

SUM110N04-05H-E3 specifies 125 mJ repetitive avalanche energy (L = 0.1 mH), exceeding typical 40 V MOSFETs (often 50–80 mJ). This is achieved via optimized cell layout and process tuning - verified per JEDEC JESD24-11. It supports reliable operation in inductive switching applications like motor drives without external snubbers under defined test conditions.

SUM110N04-05H-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM110N04-05H-E3 FAQ

1.How can I place an order for SUM110N04-05H-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM110N04-05H-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM110N04-05H-E3 reliable?

The price and inventory of SUM110N04-05H-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM110N04-05H-E3 is usually 5 days.

3.What payment methods are accepted for SUM110N04-05H-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM110N04-05H-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM110N04-05H-E3?

SUM110N04-05H-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM110N04-05H-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM110N04-05H-E3?

For technical support, including SUM110N04-05H-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM110N04-05H-E3 requirements.

6.How does Aetrix verify that SUM110N04-05H-E3 is sourced from the original manufacturer or authorized distributors?

All SUM110N04-05H-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM110N04-05H-E3 meets industry standards.

7.What is the process for return or replacement of SUM110N04-05H-E3?

All SUM110N04-05H-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM110N04-05H-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM110N04-05H-E3 part is unused and in its original packaging.

Return procedure for SUM110N04-05H-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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