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Vishay Siliconix SUM110N04-2M1P-E3
- Part No.:
- SUM110N04-2M1P-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM110N04-2M1P-E3.pdf
- Description:
- MOSFET N-CH 40V 29A/110A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,734
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Product details
Overview
SUM110N04-2M1P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 110 A continuous drain current at TC = 25 °C, and 2.1 mΩ RDS(on) at VGS = 10 V. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and server/telecom power supplies.
For engineers reviewing the SUM110N04-2M1P-E3 datasheet, SUM110N04-2M1P-E3 pinout, SUM110N04-2M1P-E3 application, or SUM110N04-2M1P-E3 equivalent, key selection criteria include its 240 nC total gate charge, 0.33 °C/W junction-to-case thermal resistance, and TO-263 (D2PAK) surface-mount package with exposed drain tab for enhanced thermal performance.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and high current density. Its gate threshold voltage ranges from 1.2 V to 2.5 V, and it supports both 10 V and 4.5 V logic-level drive with RDS(on) of 2.1 mΩ and 2.4 mΩ respectively.
The device features 100 % Rg and UIS testing, integrated body diode with 50–75 ns reverse recovery time, and avalanche energy rating of 320 mJ. Thermal design is enabled by its 0.33 °C/W RthJC and 32 °C/W RthJA (steady-state, FR4 board).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage in off-state; defines use in ≤40 V bus systems. |
| RDS(on) | 2.1 mΩ @ VGS = 10 V - Enables <0.5 W conduction loss at 50 A, critical for high-efficiency power stages. |
| ID (continuous) | 110 A @ TC = 25 °C - Package-limited current; requires heatsinking above ~70 °C case temperature. |
| Qg | 240 nC (typ.) - High gate charge demands robust gate driver capable of ≥2 A peak sourcing/sinking. |
| RthJC | 0.33 °C/W (typ.) - Enables direct thermal coupling to heatsink; 33 °C rise per 100 W dissipated. |
| VGS(th) | 1.2–2.5 V - Ensures turn-on with standard 3.3 V or 5 V logic; avoids unintended conduction near 0 V. |
| EAS | 320 mJ - Supports unclamped inductive switching in flyback or LLC resonant converters. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab (pin 2) for thermal and electrical connection. Dimensions per Vishay Doc. 71198: D = 0.340–0.380", E = 0.380–0.410", L = 0.575–0.625".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V drive; 0.85–1.3 Ω gate resistance affects switching speed. |
| 2 (D) | Drain | Main power output terminal; electrically and thermally connected to exposed metal tab. |
| 3 (S) | Source | Power return path; referenced to gate drive ground; carries full load current and body diode forward current. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers industry-leading RDS(on) × area efficiency for compact high-current designs. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| Exposed drain tab | Provides low-impedance thermal path to PCB copper or external heatsink, reducing junction temperature rise. |
| Low Qgd / Qg ratio | Qgd = 22 nC, Qg = 240 nC → 9.2 % - Improves Miller immunity and enables faster, more controllable turn-off. |
| Body diode trr | 50–75 ns - Enables reliable synchronous rectification in high-frequency (>300 kHz) topologies without excessive ringing. |
Applications
| Server VRM Output Stage | Telecom DC-DC Converter |
|---|---|
Use Scenario: High-current, multiphase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diodes. Use Value: 2.1 mΩ RDS(on) reduces conduction loss by >60 % vs. typical 5 mΩ alternatives, improving system efficiency by 1.2–1.8 % at full load. | Use Scenario: 48 V input to 12 V intermediate bus converter in telecom shelf power systems. IC Role / Device Role: Primary-side high-current switch in hard-switched or ZVS phase-shifted full-bridge topology. Use Value: 110 A current rating and 320 mJ EAS support 250 A pulsed operation during startup or overload, ensuring reliability under fault conditions. |
| Industrial Motor Drive Inverter | EV Onboard Charger PFC Stage |
Use Scenario: 24–48 V three-phase inverter driving BLDC motors up to 3 kW. IC Role / Device Role: Half-bridge low-side switch handling continuous 60–80 A motor phase current. Use Value: 0.33 °C/W RthJC allows direct mounting to aluminum chassis, eliminating need for additional thermal interface material in space-constrained enclosures. | Use Scenario: Boost PFC stage in 3.3 kW single-phase onboard charger operating at 100 kHz switching frequency. IC Role / Device Role: High-efficiency, low-Qg switch minimizing switching losses while maintaining soft turn-off via controlled Qgd. Use Value: 240 nC Qg and 22 nC Qgd enable optimized gate drive design with minimal Miller-induced shoot-through risk at high dv/dt. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; Qg = 130 nC; TO-220 package; no exposed drain tab. | Limited to lower-current (<60 A) applications; requires external heatsink; higher conduction loss. | Select when cost sensitivity outweighs efficiency and thermal constraints; not suitable for surface-mount-only layouts. |
| STL220N4F7AG | RDS(on) = 1.7 mΩ @ 10 V; Qg = 190 nC; PowerFLAT 8x8 HV package; 100 % avalanche rated. | Smaller footprint but lower current rating (80 A); superior RDS(on) but less thermal mass than TO-263. | Prefer for space-constrained, medium-power designs where PCB real estate is critical and peak current ≤80 A. |
Compared with IRF1404ZPBF and STL220N4F7AG, SUM110N04-2M1P-E3 delivers the highest continuous current capability (110 A) in a thermally optimized TO-263 package, making it optimal for high-power density, high-reliability industrial and computing power stages where thermal management and conduction loss dominate design trade-offs.
Availability
SUM110N04-2M1P-E3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, RoHS-compliant lead-free assembly, and long-term production continuity.
Supply support for SUM110N04-2M1P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SUM110N04-2M1P-E3 belongs to Vishay's TrenchFET® Gen IV high-current power MOSFET product line, engineered for demanding synchronous rectification and primary-side switching in high-efficiency, high-power-density power conversion systems.
FAQ
What is the maximum continuous drain current rating for SUM110N04-2M1P-E3?
The SUM110N04-2M1P-E3 has a continuous drain current rating of 110 A at TC = 25 °C, limited by package thermal capacity-not silicon capability. At TC = 70 °C, the rating remains 110 A, but derating applies above that temperature per the current derating curve in Vishay Doc. 69983. The ambient-rated current is 29 A at TA = 25 °C on a 1" x 1" FR4 board.
Does SUM110N04-2M1P-E3 support 4.5 V gate drive?
Yes, SUM110N04-2M1P-E3 is fully specified for 4.5 V gate drive: RDS(on) is guaranteed at 2.4 mΩ max at VGS = 4.5 V and ID = 20 A. Its VGS(th) range of 1.2–2.5 V ensures reliable turn-on with standard 3.3 V or 5 V logic, making it suitable for controllers without dedicated 10 V gate drivers.
What is the thermal resistance from junction to case for SUM110N04-2M1P-E3?
The SUM110N04-2M1P-E3 has a typical junction-to-case thermal resistance (RthJC) of 0.33 °C/W and a maximum of 0.4 °C/W. This low value reflects the efficient thermal path through the exposed drain tab, enabling direct mounting to heatsinks or large PCB copper areas for high-power operation.
Is SUM110N04-2M1P-E3 RoHS-compliant and lead-free?
Yes, SUM110N04-2M1P-E3 is RoHS-compliant and lead-free, as confirmed by the ordering suffix "-E3" and explicit statement in Vishay's documentation: "Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free)". It meets JEDEC J-STD-609 Category 3 moisture sensitivity level.
What is the avalanche energy rating of SUM110N04-2M1P-E3?
The SUM110N04-2M1P-E3 is rated for 320 mJ single-pulse avalanche energy (EAS) under test conditions of L = 0.1 mH, TJ = 25 °C. This rating supports reliable operation in circuits with inductive loads or during transient overcurrent events without requiring external clamping components.
SUM110N04-2M1P-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 360 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 18800 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.13W (Ta), 312W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM110N04-2M1P-E3 FAQ
1.How can I place an order for SUM110N04-2M1P-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM110N04-2M1P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM110N04-2M1P-E3 reliable?
The price and inventory of SUM110N04-2M1P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM110N04-2M1P-E3 is usually 5 days.
3.What payment methods are accepted for SUM110N04-2M1P-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM110N04-2M1P-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM110N04-2M1P-E3?
SUM110N04-2M1P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM110N04-2M1P-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM110N04-2M1P-E3?
For technical support, including SUM110N04-2M1P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM110N04-2M1P-E3 requirements.
6.How does Aetrix verify that SUM110N04-2M1P-E3 is sourced from the original manufacturer or authorized distributors?
All SUM110N04-2M1P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM110N04-2M1P-E3 meets industry standards.
7.What is the process for return or replacement of SUM110N04-2M1P-E3?
All SUM110N04-2M1P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM110N04-2M1P-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM110N04-2M1P-E3 part is unused and in its original packaging.
Return procedure for SUM110N04-2M1P-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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