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Vishay Siliconix SUM110N06-3M9H-E3
- Part No.:
- SUM110N06-3M9H-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM110N06-3M9H-E3.pdf
- Description:
- MOSFET N-CH 60V 110A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,358
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Product details
Overview
SUM110N06-3M9H-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 110 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers 3.9 mΩ typical rDS(on) at VGS = 10 V and ID = 30 A, with 200 nC total gate charge, and is housed in a TO-263 (D²PAK) package for high-power motor drive and DC-DC converter applications.
For engineers reviewing the SUM110N06-3M9H-E3 datasheet, SUM110N06-3M9H-E3 pinout, SUM110N06-3M9H-E3 application, or SUM110N06-3M9H-E3 equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 100% Rg tested gate resistance, avalanche energy rating of 245 mJ, and guaranteed operation up to 175 °C junction temperature in high-reliability industrial power systems.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and high thermal robustness. Its 60 V V(BR)DSS rating supports 48 V bus architectures, while the 175 °C TJ max enables operation in sealed enclosures without forced cooling.
The device features a source-drain diode with 1.1–1.5 V forward voltage at 85 A and 65–100 ns reverse recovery time, supporting synchronous rectification. Its 15,800 pF input capacitance and 600 pF reverse transfer capacitance define switching behavior under 10 V gate drive in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60 V - Supports 48 V nominal input systems with 25 % headroom for transients |
| rDS(on) | 3.9 mΩ @ VGS = 10 V, ID = 30 A - Enables < 0.4 W conduction loss at 100 A in optimized thermal layout |
| ID (continuous) | 110 A @ TC = 25 °C - Package-limited output suitable for high-current half-bridge legs |
| Qg | 200 nC (typ) - Requires ≥ 2 A peak gate driver for 100 ns switching transitions |
| RthJC | 0.4 °C/W - Allows 375 W power dissipation with ≤ 150 °C case-to-ambient delta |
| TJ max | 175 °C - Qualified for automotive under-hood and industrial motor control environments |
| EAS | 245 mJ - Withstands single-pulse inductive energy in 48 V solenoid or relay drive |
Pinout & Package
Package: TO-263 (D²PAK), surface-mount, drain-connected tab for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 10 V logic-level drive; 0.6–1.8 Ω gate resistance affects Miller plateau timing |
| D | Drain | Main power output terminal; electrically and thermally tied to exposed copper tab |
| S | Source | Power return and reference node; connects to PCB ground plane for low-inductance current return path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers 3.9 mΩ rDS(on) in TO-263, enabling higher efficiency than planar MOSFETs at same die size |
| 100 % Rg tested | Ensures gate resistance between 0.6–1.8 Ω, critical for consistent turn-on/turn-off timing across production lots |
| High threshold voltage at 175 °C | VGS(th) remains ≥ 3.4 V at max junction temperature, preventing thermal runaway in sustained overload |
| Low thermal resistance package | RthJC = 0.4 °C/W allows direct heatsinking to chassis or copper pour without thermal interface material |
| 175 °C junction rating | Validated operation up to 175 °C TJ enables use in sealed, fanless enclosures without derating |
Applications
| Motor Drive Inverter | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current 3-phase inverter driving 5–10 kW permanent magnet motors in HVAC compressors. IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module replacement, handling 110 A phase current with < 1.5 V saturation drop. Use Value: 0.4 °C/W RthJC enables direct mounting to aluminum heatsink, reducing thermal stack-up by 2 layers versus TO-220 alternatives. | Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V, 1.5 kW telecom DC-DC brick. IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology, operating at 200 kHz with 300 ns total switching time. Use Value: 200 nC Qg and 600 pF Crss support ZVS-assisted soft switching, cutting switching losses by 35 % vs. comparable 5 mΩ devices. |
| UPS Output Stage | EV Onboard Charger |
Use Scenario: Bidirectional output stage in 3 kVA online UPS delivering clean sine wave to sensitive medical equipment. IC Role / Device Role / Timing Role: Half-bridge leg switch sustaining 110 A RMS current with 175 °C TJ capability during 30-second overload events. Use Value: 245 mJ EAS rating absorbs line surge energy without external snubbers, simplifying BOM and layout. | Use Scenario: AC/DC PFC boost switch in 6.6 kW OBC for light-duty EVs, operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Fast-switching boost transistor with 15,800 pF Ciss and 1050 pF Coss shaping gate drive loop stability. Use Value: 3.9 mΩ rDS(on) at 125 °C (6.3 mΩ) maintains < 1.2 % conduction loss at full load, meeting 96.5 % efficiency target. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A, 2.2 mΩ @ 10 V, TO-220FP package, RthJC = 0.75 °C/W | Higher current rating but larger thermal resistance; requires heatsink even at 75 A | Prefer when peak current > 150 A is needed and board space permits TO-220FP mounting |
| IRFB4115PBF | 55 V, 110 A, 4.5 mΩ @ 10 V, TO-220 package, RthJC = 0.7 °C/W, no 175 °C rating | Limited to 150 °C TJ; higher rDS(on) increases conduction loss by ~15 % at 100 A | Select only for cost-sensitive 55 V systems where 175 °C operation is not required |
Compared with STL220N6F7 and IRFB4115PBF, SUM110N06-3M9H-E3 offers superior thermal performance (0.4 °C/W vs. ≥0.7 °C/W) and extended temperature capability (175 °C vs. ≤150 °C), making it optimal for compact, high-ambient industrial power stages where thermal margin is constrained.
Availability
SUM110N06-3M9H-E3 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, UPS output stages, and EV onboard chargers requiring stable component supply and long-term manufacturing continuity.
Supply support for SUM110N06-3M9H-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and thermal efficiency.
The SUMx10N06 series targets high-current, high-temperature power conversion applications, designed specifically for industrial motor control, telecom power supplies, and renewable energy systems demanding ruggedized 175 °C operation.
FAQ
What is the maximum continuous drain current rating for SUM110N06-3M9H-E3 at 125 °C case temperature?
The SUM110N06-3M9H-E3 maintains a continuous drain current rating of 110 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited current capacity rather than silicon limitation, and is validated under conditions of proper PCB thermal design per the datasheet's FR-4 mounting note.
Does SUM110N06-3M9H-E3 support gate drive voltages below 10 V?
Yes - SUM110N06-3M9H-E3 has a gate-threshold voltage range of 3.4–4.5 V, enabling partial enhancement at 5 V drive. However, its specified rDS(on) of 3.9 mΩ is guaranteed only at VGS = 10 V; at 5 V, rDS(on) rises significantly (≈12–15 mΩ), increasing conduction loss and requiring careful thermal validation.
Is SUM110N06-3M9H-E3 RoHS compliant and lead-free?
Yes - SUM110N06-3M9H-E3 is explicitly marked as Lead (Pb)-free in the ordering information and certified RoHS compliant per the Vishay documentation. The "-E3" suffix denotes lead-free, halogen-free, and green-compliant packaging per JEDEC J-STD-609.
What is the safe operating area (SOA) limitation for SUM110N06-3M9H-E3 at 100 VDS and 10 ms pulse width?
At VDS = 100 V and 10 ms pulse width, the SUM110N06-3M9H-E3 SOA curve limits ID to approximately 35 A due to thermal constraints. This is well below its 440 A pulsed drain rating because SOA is governed by transient thermal impedance and voltage derating - see Figure 12 in datasheet S-70534-Rev. C.
Can SUM110N06-3M9H-E3 be used in avalanche mode for inductive load switching?
Yes - SUM110N06-3M9H-E3 is fully rated for single-pulse avalanche operation with EAS = 245 mJ at L = 0.1 mH. Its avalanche ruggedness is production-tested, making it suitable for solenoid drivers, relay controls, and flyback snubberless designs where inductive energy must be absorbed internally.
SUM110N06-3M9H-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 300 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM110N06-3M9H-E3 FAQ
1.How can I place an order for SUM110N06-3M9H-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM110N06-3M9H-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM110N06-3M9H-E3 reliable?
The price and inventory of SUM110N06-3M9H-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM110N06-3M9H-E3 is usually 5 days.
3.What payment methods are accepted for SUM110N06-3M9H-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM110N06-3M9H-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM110N06-3M9H-E3?
SUM110N06-3M9H-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM110N06-3M9H-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM110N06-3M9H-E3?
For technical support, including SUM110N06-3M9H-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM110N06-3M9H-E3 requirements.
6.How does Aetrix verify that SUM110N06-3M9H-E3 is sourced from the original manufacturer or authorized distributors?
All SUM110N06-3M9H-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM110N06-3M9H-E3 meets industry standards.
7.What is the process for return or replacement of SUM110N06-3M9H-E3?
All SUM110N06-3M9H-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM110N06-3M9H-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM110N06-3M9H-E3 part is unused and in its original packaging.
Return procedure for SUM110N06-3M9H-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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