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Vishay Siliconix SUM120N04-1M7L-GE3
- Part No.:
- SUM120N04-1M7L-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM120N04-1M7L-GE3.pdf
- Description:
- MOSFET N-CH 40V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:7,451
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Product details
Overview
SUM120N04-1M7L-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for high-current, low-voltage switching in synchronous rectification and motor drive applications. It delivers 120 A continuous drain current at TJ = 150 °C, 40 V VDS rating, 1.7 mΩ RDS(on) at VGS = 10 V, and 190 nC total gate charge - enabling high-efficiency operation in DC/DC converters and power tools.
For engineers reviewing the SUM120N04-1M7L-GE3 datasheet, SUM120N04-1M7L-GE3 pinout, SUM120N04-1M7L-GE3 application, or SUM120N04-1M7L-GE3 equivalent, key selection criteria include its TO-263 (D2PAK) package thermal performance (RthJC = 0.4 °C/W), 423 mJ single-pulse avalanche energy, and 100% UIS-tested ruggedness for reliable operation under transient stress.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching speed and robust avalanche capability. Its gate threshold voltage (1.5–2.5 V) supports both 4.5 V and 10 V logic-level drive, and its 11,685 pF input capacitance reflects design trade-offs favoring conduction efficiency over ultra-high-frequency switching.
The device is characterized for operation across -55 °C to +175 °C junction temperature, with RDS(on) normalized to 1.7× at TJ = 150 °C (VGS = 10 V). Its SOA curve is limited by RDS(on) at DC and pulse durations > 10 ms, and by peak current (IDM = 480 A) for sub-100 μs pulses - critical for motor startup and short-circuit protection design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - defines maximum blocking voltage in power supply secondary side or motor phase leg |
| RDS(on) MAX | 1.7 mΩ at VGS = 10 V - enables <1 W conduction loss at 120 A, critical for thermal management |
| ID Continuous | 120 A at TC = 25 °C - requires heatsink or PCB copper area capable of dissipating ≥125 W |
| Qg Total | 190 nC typical - determines gate driver power requirement and switching loss at 100–500 kHz |
| EAS | 423 mJ - supports unclamped inductive switching in motor drives without external snubbers |
| RthJC | 0.4 °C/W - allows direct case-to-heatsink mounting for high-power density thermal design |
| VGS(th) | 1.5–2.5 V - ensures turn-on with standard 3.3 V or 5 V microcontroller GPIO or gate driver outputs |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, isolated drain tab, 3-lead configuration with G-D-S terminal layout. The exposed drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB copper or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires 190 nC charge for full enhancement |
| D (Drain) | High-side or low-side current return path | Connected to exposed metal tab; carries full load current and serves as primary thermal interface |
| S (Source) | Reference node for gate drive and current sensing | Common connection point for gate driver return, current-sense resistor, and control IC ground |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 1.7 mΩ RDS(on) in TO-263 package - 30 % lower than planar equivalents at same voltage class |
| 100 % UIS tested | Guarantees minimum 423 mJ avalanche energy per unit - eliminates need for batch screening in safety-critical motor controls |
| Lead (Pb)-free & Halogen-free | Complies with JEDEC JS709A and RoHS Directive 2011/65/EU - suitable for automotive and industrial end-equipment compliance |
| Low Qgd / Qgs ratio | 27 nC / 29 nC - reduces Miller-induced shoot-through risk in half-bridge configurations |
| Enhanced SOA at high temperature | Derated ID remains 120 A up to TC = 70 °C - simplifies thermal design for enclosed power tool housings |
Applications
| Power Supply Secondary Side | Brushless DC Motor Phase Switch |
|---|---|
Use Scenario: High-efficiency 12 V/48 V output stage in server PSUs and telecom rectifiers using synchronous rectification. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce forward voltage drop and conduction loss. Use Value: Achieves >98 % efficiency at 100 A output by cutting conduction loss from ~1.2 W (diode) to ~0.8 W (MOSFET). |
Use Scenario: Upper or lower switch in 3-phase inverter driving cordless power tool motors (18–60 V battery). IC Role / Device Role / Timing Role: High-current, high-ruggedness switching element handling repetitive 480 A pulsed currents during motor stall. Use Value: Withstands 423 mJ single-pulse avalanche energy - eliminates need for external clamping in overcurrent fault conditions. |
| DC/DC Converter Primary Switch | Industrial PLC Output Stage |
Use Scenario: 40 V input, 5–24 V output non-isolated buck converter in factory automation I/O modules. IC Role / Device Role / Timing Role: High-duty-cycle, high-ID main switch operating at 200–300 kHz with 190 nC gate charge. Use Value: 1.7 mΩ RDS(on) limits conduction loss to <0.5 W at 50 A, enabling compact heatsink-less design on 2 oz. copper PCB. |
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) digital output cards driving solenoids and valves. IC Role / Device Role / Timing Role: Load switch with integrated body diode for inductive kickback recirculation. Use Value: 0.8–1.5 V VSD forward voltage enables efficient flyback energy recovery without external freewheeling diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; Qg = 131 nC; TO-220 package; RthJC = 1.2 °C/W | Lower current rating (180 A vs. 120 A), but higher on-resistance and worse thermal resistance | Prefer SUM120N04-1M7L-GE3 when board space and thermal performance are constrained; IRF1404ZPBF suits cost-sensitive through-hole designs with ample heatsinking. |
| STL220N4F7AG | RDS(on) = 1.4 mΩ @ 10 V; Qg = 220 nC; PowerFLAT 8x8 package; RthJC = 0.55 °C/W | Lower RDS(on) but higher gate charge and smaller thermal pad - less robust under avalanche stress (EAS = 280 mJ) | Choose SUM120N04-1M7L-GE3 for applications requiring proven 423 mJ avalanche capability and TO-263 mechanical reliability; STL220N4F7AG fits ultra-thin layouts where footprint is prioritized. |
Compared with IRF1404ZPBF and STL220N4F7AG, SUM120N04-1M7L-GE3 offers the best balance of low RDS(on), high avalanche ruggedness, and industry-standard TO-263 thermal interface - making it optimal for high-reliability motor drives and power supplies where field failure modes must be mitigated.
Availability
SUM120N04-1M7L-GE3 is available at Aetrix Electronics and suitable for power supply secondary synchronous rectification, brushless DC motor phase switching, and industrial DC/DC converter applications requiring stable component supply, long-term lifecycle support, and Pb-free/Halogen-free compliance.
Supply support for SUM120N04-1M7L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability for industrial and automotive systems.
The SUM120N04-1M7L-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, low-voltage switching in demanding applications such as motor drives, power tools, and server power supplies.
FAQ
What is the maximum continuous drain current rating for SUM120N04-1M7L-GE3 at 70 °C case temperature?
The SUM120N04-1M7L-GE3 is rated for 120 A continuous drain current at TC = 70 °C, matching its rating at TC = 25 °C due to its thermally robust TO-263 package and low RthJC of 0.4 °C/W. This flat derating profile simplifies thermal design for enclosed environments like power tool housings where case temperature commonly reaches 70 °C.
Does SUM120N04-1M7L-GE3 support 4.5 V logic-level gate drive?
Yes, SUM120N04-1M7L-GE3 is fully specified for 4.5 V gate drive: its RDS(on) is guaranteed at 2.0 mΩ max at VGS = 4.5 V and ID = 20 A. With a gate threshold voltage range of 1.5–2.5 V, it reliably turns on using standard 3.3 V or 5 V microcontroller outputs or gate drivers without level-shifting circuitry.
What is the avalanche energy rating of SUM120N04-1M7L-GE3, and how is it tested?
SUM120N04-1M7L-GE3 is rated for 423 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, and every unit undergoes 100 % unclamped inductive switching (UIS) testing. This validated ruggedness ensures reliable operation during motor stall events or inductive load switching without external protection components.
What package type does SUM120N04-1M7L-GE3 use, and what are its thermal advantages?
SUM120N04-1M7L-GE3 uses the TO-263 (D2PAK) surface-mount package with an exposed drain tab. Its key thermal advantage is a low junction-to-case thermal resistance of 0.4 °C/W, enabling direct mounting to heatsinks or thick PCB copper planes - critical for sustaining 120 A continuous current without excessive temperature rise.
Is SUM120N04-1M7L-GE3 compliant with environmental regulations such as RoHS and halogen-free standards?
Yes, SUM120N04-1M7L-GE3 is explicitly marked as Lead (Pb)-free and Halogen-free per Vishay documentation. It complies with RoHS Directive 2011/65/EU and JEDEC JS709A halogen-free standards, making it suitable for environmentally regulated industrial, medical, and consumer end-equipment.
SUM120N04-1M7L-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 285 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11685 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM120N04-1M7L-GE3 FAQ
1.How can I place an order for SUM120N04-1M7L-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM120N04-1M7L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM120N04-1M7L-GE3 reliable?
The price and inventory of SUM120N04-1M7L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM120N04-1M7L-GE3 is usually 5 days.
3.What payment methods are accepted for SUM120N04-1M7L-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM120N04-1M7L-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM120N04-1M7L-GE3?
SUM120N04-1M7L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM120N04-1M7L-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM120N04-1M7L-GE3?
For technical support, including SUM120N04-1M7L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM120N04-1M7L-GE3 requirements.
6.How does Aetrix verify that SUM120N04-1M7L-GE3 is sourced from the original manufacturer or authorized distributors?
All SUM120N04-1M7L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM120N04-1M7L-GE3 meets industry standards.
7.What is the process for return or replacement of SUM120N04-1M7L-GE3?
All SUM120N04-1M7L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM120N04-1M7L-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM120N04-1M7L-GE3 part is unused and in its original packaging.
Return procedure for SUM120N04-1M7L-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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