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Vishay Siliconix SUM25P10-138-E3
- Part No.:
- SUM25P10-138-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM25P10-138-E3.pdf
- Description:
- MOSFET N-CH 100V 16.7A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:7,921
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Product details
Overview
SUM25P10-138-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -100 V drain-source voltage, with RDS(on) = 0.138 Ω at VGS = -10 V and continuous drain current of -16.3 A at TC = 25 °C. It delivers 24 nC typical total gate charge and features drain-connected tab for enhanced thermal performance in high-current DC/DC converters and motor control stages.
For engineers reviewing the SUM25P10-138-E3 datasheet, SUM25P10-138-E3 pinout, SUM25P10-138-E3 application, or SUM25P10-138-E3 equivalent, this device is selected for high-efficiency synchronous rectification, industrial H-bridge drivers, and 100 V-class power switches where low conduction loss and robust avalanche capability (EAS = 31.25 mJ) are critical.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) while maintaining stable threshold voltage (-2 V to -4 V) and negative temperature coefficient for VDS. Its gate charge profile (Qg = 24–60 nC) supports efficient switching in hard-switched topologies up to several hundred kHz.
The device integrates a source-drain diode with VSD = -0.85 to -1.5 V at IF = -5 A and trr = 70–105 ns, enabling use in freewheeling paths without external Schottky diodes. Thermal resistance RthJC = 1.7 °C/W allows direct heatsink mounting via the exposed drain tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum blocking voltage for 100 V bus applications with margin against transients. |
| RDS(on) max | 0.138 Ω at VGS = -10 V - Enables ≤2.2 W conduction loss at 9.5 A DC load current. |
| ID cont | -16.3 A at TC = 25 °C - Supports high-current output stages in industrial power supplies. |
| Qg typ | 24 nC at VGS = -6 V - Low gate drive energy requirement for 3.3 V or 5 V logic-level controllers. |
| EAS | 31.25 mJ - Withstands single-pulse inductive energy without failure in motor drive snubbing. |
| RthJC | 1.7 °C/W - Allows >50 W dissipation with modest heatsinking; junction-to-case path optimized via drain-tab mounting. |
| VGS(th) | -2 to -4 V - Ensures reliable turn-on with standard negative gate drivers; avoids unintended conduction near 0 V. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, drain-connected tab. Exposed metal tab serves as primary heat path and electrically connects to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Drain (D) | Primary current-carrying and thermal path; must be soldered to large copper pour or heatsink. |
| Lead 1 (left) | Source (S) | Return path for load current; referenced to gate drive common in high-side configurations. |
| Lead 2 (center) | Gate (G) | Control input; requires <16 Ω series resistance to damp ringing due to Rg = 2–16 Ω. |
| Lead 3 (right) | Source (S) | Second source connection; paralleled with Lead 1 to reduce package inductance in high-di/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.138 Ω RDS(on) in TO-263 without requiring elevated gate voltage-enables compatibility with -6 V to -10 V drivers. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world motor loads. |
| Drain-connected tab | Reduces thermal impedance by 1.7 °C/W and eliminates need for isolation hardware when mounted to grounded heatsinks. |
| Low Qgd/Qgs ratio | Qgd = 6.7 nC vs. Qgs = 12.5 nC enables sharp Miller plateau transition and fast, controllable turn-off. |
| Specified SOA curve | Validated safe operating area up to 100 µs pulses supports design confidence in short-circuit conditions. |
Applications
| Industrial DC/DC Converters | Brushed DC Motor Drivers |
|---|---|
|
Use Scenario: Synchronous rectifier in isolated 48 V to 12 V flyback or forward converter for factory automation PLCs. IC Role / Device Role / Timing Role: High-side P-channel switch replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %. Use Value: 0.138 Ω RDS(on) cuts rectifier loss by >60 % versus 40 V Schottky, directly increasing power density and reducing heatsink size. |
Use Scenario: Low-side switch in H-bridge controlling 24 V brushed DC motors in robotic actuators. IC Role / Device Role / Timing Role: Power stage transistor handling bidirectional current up to 16 A peak during acceleration/deceleration. Use Value: 31.25 mJ EAS withstands inductive kickback during PWM commutation without snubber circuits. |
| Telecom Power Supplies | High-Voltage LED Drivers |
|
Use Scenario: Primary-side switch in 100 V input telecom rectifier feeding intermediate bus converters. IC Role / Device Role / Timing Role: P-channel high-side switch managing hold-up time and transient response in redundant power systems. Use Value: -100 V VDS rating provides 20 % margin over 80 V telecom nominal, ensuring reliability under line surges. |
Use Scenario: Constant-current switch regulating strings of 30+ white LEDs in streetlight drivers. IC Role / Device Role / Timing Role: Series-pass element modulated at 1–20 kHz to maintain precise LED current despite input ripple. Use Value: RthJC = 1.7 °C/W enables stable thermal operation at 12 W dissipation without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPbF | RDS(on) = 0.2 Ω @ -10 V; higher Qg = 88 nC; TO-220 package. | Larger footprint, higher switching loss; suitable only where layout space permits and gate drive strength is ample. | Choose IRF9540NPbF only if TO-220 mechanical fit is required and thermal budget allows 45 % higher conduction loss. |
| DMT6009LPS-13 | RDS(on) = 0.009 Ω @ -10 V but rated only to -60 V; SO-8 package; lower ID = -12 A. | Insufficient voltage rating for 100 V bus; unsuitable for telecom or industrial DC/DC inputs. | Select DMT6009LPS-13 only for 48 V systems needing ultra-low RDS(on); avoid for SUM25P10-138-E3's -100 V use cases. |
Compared with IRF9540NPbF and DMT6009LPS-13, SUM25P10-138-E3 uniquely balances -100 V rating, 0.138 Ω conduction loss, TO-263 thermal performance, and 24 nC gate charge-making it optimal for compact, high-reliability 100 V power switches where both voltage margin and efficiency matter.
Availability
SUM25P10-138-E3 is available at Aetrix Electronics and suitable for industrial DC/DC converters, brushed DC motor drivers, and telecom power supplies requiring stable component supply and lead-free compliance.
Supply support for SUM25P10-138-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SUM25P10-138-E3 belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered for high-voltage, high-current switching in space-constrained power conversion systems.
FAQ
What is the maximum continuous drain current for SUM25P10-138-E3 at 125 °C case temperature?
The SUM25P10-138-E3 supports -9.6 A continuous drain current at TC = 125 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures long-term reliability when operated within the specified junction temperature range of -55 °C to +175 °C. Designers must verify PCB copper area and heatsinking to sustain this current level.
Does SUM25P10-138-E3 have a built-in body diode, and what are its key parameters?
Yes, SUM25P10-138-E3 includes an integrated source-drain body diode rated for -16.3 A continuous and -40 A pulsed current. Its forward voltage is -0.85 to -1.5 V at IF = -5 A and VGS = 0 V, with reverse recovery time trr = 70–105 ns and Qrr = 220–330 nC. These values enable use in freewheeling paths without external diodes in many motor and converter topologies.
Is SUM25P10-138-E3 RoHS-compliant and halogen-free?
Yes, SUM25P10-138-E3 is lead (Pb)-free and RoHS-compliant per Directive 2011/65/EU, as confirmed in its ordering information and Vishay's Material Category Policy. It also meets JEDEC JS709A halogen-free requirements, with chlorine and bromine content below 900 ppm and antimony below 600 ppm-verified through material declarations and testing.
What is the gate threshold voltage range for SUM25P10-138-E3, and how does it affect drive circuit design?
The gate threshold voltage VGS(th) for SUM25P10-138-E3 is -2 V to -4 V at ID = -250 µA. This range ensures reliable turn-on with gate drive voltages ≥ -6 V while preventing accidental conduction near 0 V. Designers should use gate drivers capable of delivering ≥ -10 V swing and include pull-down resistors to guarantee full turn-off during standby or fault conditions.
Can SUM25P10-138-E3 be used in parallel configurations, and what layout considerations apply?
Yes, SUM25P10-138-E3 supports paralleling due to its negative temperature coefficient of RDS(on), which promotes current sharing. Layout requires matched gate trace lengths, individual 10 Ω gate resistors per device, and symmetrical source/drain copper pours to minimize loop inductance. The dual-source leads (Leads 1 and 3) must be equally routed to avoid imbalance.
SUM25P10-138-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.8mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2110 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 88.2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM25P10-138-E3 FAQ
1.How can I place an order for SUM25P10-138-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM25P10-138-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM25P10-138-E3 reliable?
The price and inventory of SUM25P10-138-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM25P10-138-E3 is usually 5 days.
3.What payment methods are accepted for SUM25P10-138-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM25P10-138-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM25P10-138-E3?
SUM25P10-138-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM25P10-138-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM25P10-138-E3?
For technical support, including SUM25P10-138-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM25P10-138-E3 requirements.
6.How does Aetrix verify that SUM25P10-138-E3 is sourced from the original manufacturer or authorized distributors?
All SUM25P10-138-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM25P10-138-E3 meets industry standards.
7.What is the process for return or replacement of SUM25P10-138-E3?
All SUM25P10-138-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM25P10-138-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM25P10-138-E3 part is unused and in its original packaging.
Return procedure for SUM25P10-138-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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