Vishay Siliconix SUM36N20-54P-E3

Overview

SUM36N20-54P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 200 V drain-source voltage, 36 A continuous drain current at TC = 25 °C, and 0.054 Ω RDS(on) at VGS = 10 V and ID = 20 A. It operates up to 175 °C junction temperature and is RoHS-compliant, designed for high-efficiency switching in DC-DC converters and industrial power supplies.

For engineers reviewing the SUM36N20-54P-E3 datasheet, SUM36N20-54P-E3 pinout, SUM36N20-54P-E3 application, or SUM36N20-54P-E3 equivalent, key selection criteria include its 200 V VDS rating, low gate charge (57 nC at VGS = 10 V), TO-263 package thermal performance (RthJC = 0.75 °C/W), avalanche energy capability (20 mJ), and 100 % UIS testing.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in hard-switched topologies. Its 0.0435 Ω typical RDS(on) at VGS = 15 V and 20 A enables high-current operation with minimal I²R loss, while the 85–127 nC total gate charge supports efficient gate drive design at 100 V VDS.

The device features a robust body diode with 116–175 ns reverse recovery time and 0.53–0.8 µC Qrr, suitable for synchronous rectification and freewheeling applications. Thermal design is enabled by its low junction-to-case resistance (0.75 °C/W) and 166 W maximum power dissipation at TC = 25 °C.

Key Specifications

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with G-S-D terminal layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP36NF20 and IRFP4668PBF, SUM36N20-54P-E3 delivers optimal balance of low RDS(on), moderate Qg, and surface-mount TO-263 packaging-making it preferred for high-density, thermally constrained industrial power modules where both conduction and switching losses must be tightly managed.

Availability

SUM36N20-54P-E3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, LED streetlight drivers, and telecom DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for SUM36N20-54P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and ruggedized packaging.

The SUM36N20-54P-E3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and computing power conversion systems operating up to 175 °C.

FAQ

What is the maximum continuous drain current rating for SUM36N20-54P-E3 at 100 °C case temperature?

The SUM36N20-54P-E3 supports 22.6 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be applied when ambient or heatsink conditions prevent maintaining TC ≤ 25 °C. Designers should verify junction temperature using RthJC = 0.75 °C/W and actual power dissipation to ensure TJ remains ≤ 175 °C.

Does SUM36N20-54P-E3 have integrated gate protection?

SUM36N20-54P-E3 does not include integrated gate Zener clamping or ESD protection circuitry. Its gate-source voltage rating is ±25 V, and gate-body leakage is limited to ±100 nA at ±20 V. External gate resistors (typically 10–47 Ω) and TVS diodes are recommended for robust gate drive in noisy industrial environments. The device relies on external circuitry for overvoltage and dv/dt protection.

Is SUM36N20-54P-E3 suitable for synchronous rectification in a 12 V output buck converter?

Yes, SUM36N20-54P-E3 is suitable for synchronous rectification in 12 V output buck converters. Its low RDS(on) of 0.054 Ω at VGS = 10 V minimizes conduction loss, and its body diode forward voltage (VSD = 0.86–1.5 V at IF = 20 A) supports efficient freewheeling. However, designers must ensure gate drive timing avoids shoot-through and accounts for trr = 116–175 ns to prevent cross-conduction losses.

What is the thermal resistance from junction to ambient for SUM36N20-54P-E3 on a standard PCB?

The junction-to-ambient thermal resistance (RthJA) for SUM36N20-54P-E3 is 40 °C/W when mounted on a 1" square FR-4 PCB with standard copper coverage. This value assumes no external heatsink and is highly layout-dependent. For production designs, thermal simulation or measurement using the device's RthJC = 0.75 °C/W and heatsink interface resistance is strongly recommended to validate safe operating temperature margins.

How is SUM36N20-54P-E3 marked on the package?

SUM36N20-54P-E3 is marked on the top surface of the TO-263 package with the part number "SUM36N20" followed by a date code and factory identifier. The "-E3" suffix denotes lead (Pb)-free finish and complies with RoHS Directive 2002/95/EC. Marking is laser-etched and conforms to Vishay's standard part marking specification documented in datasheet 74295.