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Vishay Siliconix SUM40012EL-GE3
- Part No.:
- SUM40012EL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM40012EL-GE3.pdf
- Description:
- MOSFET N-CH 40V 150A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,434
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Product details
Overview
SUM40012EL-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® power MOSFET in TO-263 package, rated for 150 A continuous drain current at TC = 25 °C, with RDS(on) of 1.39 mΩ at VGS = 10 V and 1.86 mΩ at VGS = 4.5 V, optimized for high-efficiency secondary synchronous rectification in DC/DC converters and motor drive switches.
For engineers reviewing the SUM40012EL-GE3 datasheet, SUM40012EL-GE3 pinout, SUM40012EL-GE3 application, or SUM40012EL-GE3 equivalent, key selection criteria include its 175 °C maximum junction temperature, 130 nC total gate charge, 100 % UIS tested ruggedness, and thermal resistance of 1 °C/W (junction-to-case), critical for high-power density board-level thermal management.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(on) × Qg and RDS(on) × Qoss figures of merit, directly reducing conduction and switching losses in hard-switched topologies. Its 40 V VDS rating and 150 A ID capability support operation in 12 V–24 V input systems with high peak-current demands.
The device features a robust body diode with 58 ns reverse recovery time and 72 nC Qrr at IF = 10 A, enabling efficient freewheeling in synchronous buck and half-bridge configurations. Thermal design is anchored by a low RthJC of 1 °C/W and validated SOA curves up to 10 ms pulse width under TC-limited conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 40 V - Supports 24 V nominal bus systems with 66 % voltage margin against transients. |
| RDS(on) @ 10 V | 1.39 mΩ typ. - Enables <1.4 W conduction loss at 30 A, critical for thermally constrained PCB layouts. |
| RDS(on) @ 4.5 V | 1.86 mΩ typ. - Ensures reliable turn-on with standard 3.3 V/5 V logic-level gate drivers. |
| Qg (typ) | 130 nC - Determines gate driver power requirement; ~1.3 W loss at 100 kHz switching with 10 V swing. |
| ID (cont) @ TC=25°C | 150 A - Requires ≥1"² FR4 copper area (2 oz) for thermal compliance per Vishay mounting note. |
| EAS (single) | 125 mJ - Withstands 50 A avalanche current for 0.1 mH inductive load, enhancing system fault robustness. |
| RthJC | 1 °C/W - Enables direct heatsink attachment to drain tab for high-power dissipation without thermal derating. |
Pinout & Package
TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S) in standard top-view layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 0–20 V gate drive; 1.8 Ω max gate resistance enables stable Miller clamping and dV/dt immunity. |
| D (Drain) | Main current path output | Exposed metal tab - electrically connected to drain; must be isolated from heatsink unless referenced to same potential. |
| S (Source) | Reference node / return path | Common source node for gate drive loop; low-inductance routing essential to minimize switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg FOM for reduced total power loss in high-frequency DC/DC stages. |
| 100 % UIS tested | Guarantees avalanche energy handling up to 125 mJ per pulse, eliminating need for external snubbers in inductive loads. |
| 175 °C TJ max | Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C case temperature. |
| Low Qoss (64 nC) | Reduces capacitive switching loss during hard-commutation transitions, improving light-load efficiency. |
| Body diode trr = 58 ns | Minimizes reverse recovery loss and EMI in synchronous rectifier applications versus standard Schottky alternatives. |
Applications
| Server VRM Output Stage | Industrial Motor Drive H-Bridge |
|---|---|
Use Scenario: High-current, high-efficiency point-of-load regulation in 48 V input server power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter output stage. Use Value: 1.39 mΩ RDS(on) at 10 V reduces conduction loss by >30 % vs. comparable 3.5 mΩ MOSFETs, enabling 95 %+ efficiency at 100 A. |
Use Scenario: Low-side switching in 24 V brushed DC motor control for cordless power tools. IC Role / Device Role / Timing Role: High-current PWM switch controlling motor winding current with fast turn-off. Use Value: 18 ns fall time and 130 nC Qg allow clean 20 kHz PWM switching without shoot-through risk or excessive gate drive loss. |
| Battery Management System (BMS) Protection | Automotive DC/DC Converter |
Use Scenario: Main discharge FET in 12 V Li-ion battery packs for e-bikes and portable medical devices. IC Role / Device Role / Timing Role: Load disconnect and overcurrent protection switch with integrated avalanche capability. Use Value: 125 mJ single-pulse avalanche energy handles inductive kickback from solenoid loads without external TVS. |
Use Scenario: Step-down conversion from 24 V vehicle battery to 5 V/3.3 V for infotainment and ADAS modules. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck regulator operating at 300–500 kHz. Use Value: 175 °C max junction temperature ensures reliability across -40 °C to +125 °C ambient with no derating required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; Qg = 131 nC; TO-220 package; lower current rating (180 A pulsed, 120 A cont). | Larger footprint and higher thermal resistance (RthJC = 1.25 °C/W); less suitable for space-constrained PCBs. | Prefer SUM40012EL-GE3 where board area and thermal performance are critical; IRF1404ZPBF acceptable for cost-sensitive through-hole designs. |
| IXTP150N04T4 | RDS(on) = 2.2 mΩ @ 10 V; Qg = 110 nC; TO-220AB package; 150 A cont rating but 150 °C max TJ. | Lower gate charge improves switching efficiency but reduced thermal margin limits sustained high-power operation. | Choose SUM40012EL-GE3 for applications requiring >150 °C junction operation or tighter RDS(on) tolerance; IXTP150N04T4 fits where gate drive loss dominates. |
Compared with IRF1404ZPBF and IXTP150N04T4, SUM40012EL-GE3 delivers the lowest RDS(on) in TO-263 form factor, highest junction temperature rating, and verified avalanche ruggedness-making it optimal for compact, high-reliability 40 V power stages where thermal headroom and transient robustness are non-negotiable.
Availability
SUM40012EL-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, battery management systems, and automotive DC/DC converters requiring stable component supply and long-term production continuity.
Supply support for SUM40012EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SUM series targets high-current, low-voltage power switching applications, designed specifically for synchronous rectification, motor control, and battery protection where ultra-low RDS(on) and avalanche reliability are mandatory.
FAQ
What is the maximum continuous drain current rating for SUM40012EL-GE3 at 70 °C case temperature?
The SUM40012EL-GE3 is rated for 150 A continuous drain current at both TC = 25 °C and TC = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on), allowing full current capability across a wide case temperature range without linear derating until TC exceeds 70 °C.
Does SUM40012EL-GE3 support logic-level gate drive?
Yes, SUM40012EL-GE3 supports logic-level gate drive with RDS(on) of 2.24 mΩ max at VGS = 4.5 V. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, ensuring reliable enhancement-mode turn-on using standard 3.3 V or 5 V microcontroller outputs without level-shifting circuitry.
What is the thermal resistance from junction to ambient for SUM40012EL-GE3 on a standard PCB?
The junction-to-ambient thermal resistance (RthJA) for SUM40012EL-GE3 is 40 °C/W when mounted on a 1" square FR4 PCB with 2 oz copper on both sides. This value assumes standard layout per Vishay AN826; actual RthJA will improve significantly with heatsink attachment to the drain tab due to its 1 °C/W RthJC.
Is SUM40012EL-GE3 suitable for synchronous rectification in a 400 kHz DC/DC converter?
Yes, SUM40012EL-GE3 is well-suited for 400 kHz synchronous rectification. Its 130 nC total gate charge, 18 ns fall time, and 58 ns body diode reverse recovery time enable efficient high-frequency operation. The low Qoss (64 nC) further minimizes capacitive switching loss at elevated frequencies.
What does the "-GE3" suffix indicate in SUM40012EL-GE3?
Per Vishay's ordering nomenclature, the "-GE3" suffix denotes lead (Pb)-free and halogen-free packaging compliant with RoHS Directive 2011/65/EU and JEDEC JS709. It confirms the device uses matte tin plating on leads and environmentally compliant molding compound, with no exemptions applied.
SUM40012EL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.67mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 195 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10930 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM40012EL-GE3 FAQ
1.How can I place an order for SUM40012EL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM40012EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM40012EL-GE3 reliable?
The price and inventory of SUM40012EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM40012EL-GE3 is usually 5 days.
3.What payment methods are accepted for SUM40012EL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM40012EL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM40012EL-GE3?
SUM40012EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM40012EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM40012EL-GE3?
For technical support, including SUM40012EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM40012EL-GE3 requirements.
6.How does Aetrix verify that SUM40012EL-GE3 is sourced from the original manufacturer or authorized distributors?
All SUM40012EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM40012EL-GE3 meets industry standards.
7.What is the process for return or replacement of SUM40012EL-GE3?
All SUM40012EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM40012EL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM40012EL-GE3 part is unused and in its original packaging.
Return procedure for SUM40012EL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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