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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM40014M-GE3

Name: SUM40014M-GE3
Brand: Vishay Siliconix
SKU: SUM40014M-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM40014M-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SUM40014M-GE3.pdf

Description:: MOSFET N-CH 40V 200A TO263-7

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Product details

Overview

SUM40014M-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in a D2PAK (TO-263-7L) package, rated for 200 A continuous drain current at T_C = 25 °C, with R_DS(on) of 0.82 mΩ at V_GS = 10 V and 1.13 mΩ at V_GS = 4.5 V, used as a high-current synchronous rectifier switch in DC/DC converters and motor drive inverters.

For engineers reviewing the SUM40014M-GE3 datasheet, SUM40014M-GE3 pinout, SUM40014M-GE3 application, or SUM40014M-GE3 equivalent, key selection criteria include its 175 °C maximum junction temperature, 182 nC total gate charge, 0.4 °C/W junction-to-case thermal resistance, and validated avalanche energy rating of 245 mJ - critical for high-reliability power stage design in battery management and OR-ing circuits.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low R_DS(on) and high pulsed current capability (I_DM = 400 A), with integrated body diode characterized for reverse recovery time (t_rr = 55 ns typ.) and Q_rr = 0.065 μC at I_F = 20 A, enabling efficient hard-switched and synchronous rectification topologies.

Its SOA is limited by R_DS(on) at DC and short pulses, with thermal performance defined by R_thJC = 0.4 °C/W and R_thJA = 40 °C/W on FR4 PCB (1" square), supporting high-power density designs where junction temperature must remain ≤175 °C under sustained 200 A conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 12 V–36 V bus systems.
R_DS(on) @ 10 V	0.82 mΩ typ. - Enables <1 W conduction loss at 200 A, critical for >98 % efficiency in high-current power stages.
Q_g	182 nC typ. - Determines gate drive power requirement and switching speed; impacts E_sw in hard-switched applications.
I_D (cont.)	200 A @ T_C = 25 °C - Continuous current rating achievable only with adequate heatsinking; derates to 125 W at T_C = 125 °C.
E_AS	245 mJ - Single-pulse avalanche energy rating; supports robustness against inductive switching transients without external snubbers.
R_thJC	0.4 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink for high-power dissipation.
V_GS(th)	1.1–2.4 V - Gate threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Pinout & Package

Package: D2PAK (TO-263-7L) with exposed drain tab thermally and electrically connected to pins 1, 2, 3, 4, and 7; 7-terminal surface-mount outline optimized for high-current PCB routing and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7	Drain (D)	Electrically and thermally tied to metal tab; primary current path and heat extraction node.
5	Source (S)	Main source connection; carries full load current back to ground/power return plane.
6	Gate (G)	Control input; requires low-impedance driver due to 182 nC Q_g and 2.4 Ω max. R_g.
5 (SS)	Source Sense (SS)	Dedicated Kelvin source terminal for accurate gate drive referencing and reduced noise coupling in high-dI/dt operation.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-efficiency, high-frequency switching.
100 % R_g and UIS tested	Ensures gate resistance consistency and unclamped inductive switching robustness across production lots.
175 °C maximum junction temperature	Supports operation in harsh environments (e.g., power tools, motor drives) without thermal derating penalties.
Dual-source terminals (S + SS)	Enables precision gate-source voltage control and minimizes V_GS error during high-current transient events.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements.

Applications

Power Supply Secondary Rectification	DC/AC Inverter Motor Drive
Use Scenario: High-current secondary-side synchronous rectification in isolated 48 V output telecom or server PSUs. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diodes to reduce conduction losses and improve efficiency. Use Value: Achieves <0.82 mΩ R_DS(on) at 10 V drive, cutting rectifier losses by >40 % vs. 40 V Schottky alternatives at 100+ A loads.	Use Scenario: High-current phase-leg switching in 3-phase BLDC or PMSM inverters for cordless power tools. IC Role / Device Role / Timing Role: Upper- or lower-leg power switch handling bidirectional motor current up to 200 A peak. Use Value: Withstands 400 A pulsed drain current and 245 mJ avalanche energy, eliminating need for external clamping in inductive load commutation.
Battery Management System (BMS) Protection	OR-ing Circuit for Redundant Power Supplies
Use Scenario: Main discharge/charge FET in high-capacity Li-ion battery packs for EV accessories or energy storage. IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode supporting charge/discharge paths. Use Value: Body diode forward voltage of 0.72 V (typ.) at 10 A enables low-loss reverse conduction during cell balancing or fault isolation.	Use Scenario: Diode-replacement switch in redundant 12 V or 24 V DC power supply inputs for industrial controllers. IC Role / Device Role / Timing Role: Low-V_DS forward-path switch enabling automatic load sharing and reverse-current blocking. Use Value: R_DS(on) of 0.82 mΩ delivers <10 mV forward drop at 12 A, reducing heat generation and improving system reliability over discrete diodes.

Power Supply Secondary Rectification

DC/AC Inverter Motor Drive

Use Scenario: High-current secondary-side synchronous rectification in isolated 48 V output telecom or server PSUs.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diodes to reduce conduction losses and improve efficiency.

Use Value: Achieves <0.82 mΩ R_DS(on) at 10 V drive, cutting rectifier losses by >40 % vs. 40 V Schottky alternatives at 100+ A loads.

Use Scenario: High-current phase-leg switching in 3-phase BLDC or PMSM inverters for cordless power tools.

IC Role / Device Role / Timing Role: Upper- or lower-leg power switch handling bidirectional motor current up to 200 A peak.

Use Value: Withstands 400 A pulsed drain current and 245 mJ avalanche energy, eliminating need for external clamping in inductive load commutation.

Battery Management System (BMS) Protection

OR-ing Circuit for Redundant Power Supplies

Use Scenario: Main discharge/charge FET in high-capacity Li-ion battery packs for EV accessories or energy storage.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode supporting charge/discharge paths.

Use Value: Body diode forward voltage of 0.72 V (typ.) at 10 A enables low-loss reverse conduction during cell balancing or fault isolation.

Use Scenario: Diode-replacement switch in redundant 12 V or 24 V DC power supply inputs for industrial controllers.

IC Role / Device Role / Timing Role: Low-V_DS forward-path switch enabling automatic load sharing and reverse-current blocking.

Use Value: R_DS(on) of 0.82 mΩ delivers <10 mV forward drop at 12 A, reducing heat generation and improving system reliability over discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ @ 10 V; 160 A I_D; TO-220 package; no Kelvin source.	Lower current rating and higher R_DS(on) limit use to <100 A applications; lacks SS pin for precision gate drive.	Select when cost sensitivity outweighs efficiency and thermal performance requirements in medium-power designs.
IXFN200N10P	R_DS(on) = 0.95 mΩ @ 10 V; 200 A I_D; TO-264 package; no Kelvin source; 100 V V_DS.	Higher voltage rating increases silicon cost and gate charge (220 nC); larger TO-264 footprint reduces board density.	Choose when 100 V blocking is required or when legacy TO-264 mounting infrastructure exists.

Compared with IRF1404ZPBF and IXFN200N10P, SUM40014M-GE3 offers the lowest R_DS(on) and dedicated source-sense pin for high-accuracy gate control - making it optimal for next-generation high-efficiency, high-current synchronous rectifiers and motor drive half-bridges where thermal and electrical precision are critical.

Availability

SUM40014M-GE3 is available at Aetrix Electronics and suitable for power supply secondary rectification, DC/AC inverter motor drive, and battery management systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for SUM40014M-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SUM series targets high-current, high-efficiency power conversion with TrenchFET® Gen IV technology - engineered specifically for synchronous rectification, motor control, and battery protection in demanding industrial and portable systems.

FAQ

What is the maximum continuous drain current rating for SUM40014M-GE3 at 70 °C case temperature?

The SUM40014M-GE3 is rated for 200 A continuous drain current at both T_C = 25 °C and T_C = 70 °C per its Absolute Maximum Ratings table. This reflects its robust thermal design and 0.4 °C/W R_thJC, enabling sustained high-current operation without derating between these temperatures when properly heatsunk.

Does SUM40014M-GE3 have a Kelvin source connection, and how is it implemented?

Yes, SUM40014M-GE3 features a dedicated Kelvin source (SS) terminal - Pin 5 is the main source (S), and an additional source sense (SS) connection is provided via the same pin designation in the TO-263-7L layout. This allows separation of high-current source return from gate-drive reference, minimizing V_GS error during fast dI/dt transitions.

What is the typical reverse recovery charge (Q_rr) of SUM40014M-GE3's intrinsic body diode?

The SUM40014M-GE3 body diode has a typical reverse recovery charge (Q_rr) of 0.065 μC, measured at I_F = 20 A, di/dt = 100 A/μs, and T_J = 25 °C. This low Q_rr supports efficient synchronous rectification and reduces switching losses in hard-commutated topologies.

Can SUM40014M-GE3 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - while SUM40014M-GE3 has a low V_GS(th) (1.1–2.4 V), its 182 nC total gate charge and 2.4 Ω max. gate resistance require a dedicated gate driver to achieve acceptable switching speed and minimize Miller-induced shoot-through risk. A 3.3 V GPIO lacks sufficient current drive and voltage headroom for reliable operation.

Is SUM40014M-GE3 qualified for automotive applications per AEC-Q101?

No - SUM40014M-GE3 is not AEC-Q101 qualified. It is specified for industrial, computing, and consumer power applications. For automotive-grade equivalents, refer to Vishay's SQ-series or Automotive-qualified TrenchFET® devices with explicit AEC-Q101 certification and extended temperature validation.

SUM40014M-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 0.99mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 275 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15780 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

SUM40014M-GE3 FAQ

1.How can I place an order for SUM40014M-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM40014M-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM40014M-GE3 reliable?

The price and inventory of SUM40014M-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM40014M-GE3 is usually 5 days.

3.What payment methods are accepted for SUM40014M-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM40014M-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM40014M-GE3?

SUM40014M-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM40014M-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM40014M-GE3?

For technical support, including SUM40014M-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM40014M-GE3 requirements.

6.How does Aetrix verify that SUM40014M-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM40014M-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM40014M-GE3 meets industry standards.

7.What is the process for return or replacement of SUM40014M-GE3?

All SUM40014M-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM40014M-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM40014M-GE3 part is unused and in its original packaging.

Return procedure for SUM40014M-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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