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Vishay Siliconix SUM40N15-38-E3
- Part No.:
- SUM40N15-38-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM40N15-38-E3.pdf
- Description:
- MOSFET N-CH 150V 40A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:5,762
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Product details
Overview
SUM40N15-38-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 150 V drain-source voltage, 40 A continuous drain current at TC = 25 °C, and 0.038 Ω RDS(on) at VGS = 10 V and ID = 15 A. It operates up to 175 °C junction temperature and is packaged in TO-263 (D2PAK) for high-power primary-side switching applications in offline SMPS.
For engineers reviewing the SUM40N15-38-E3 datasheet, SUM40N15-38-E3 pinout, SUM40N15-38-E3 application, or SUM40N15-38-E3 equivalent, key selection criteria include its 150 V rating, low RDS(on) at 10 V gate drive, thermal resistance of 0.9 °C/W (junction-to-case), avalanche energy rating of 80 mJ, and RoHS-compliant lead-free construction.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for PWM operation with fast switching dynamics: total gate charge is 38–60 nC, turn-on delay is 15–25 ns, and fall time is 90–140 ns under standard test conditions (VDD = 75 V, Rg = 2.5 Ω). Its SOA supports single-pulse operation up to 100 V and 40 A at TC = 25 °C.
The device integrates a robust body diode with 1.0–1.5 V forward voltage at 40 A and reverse recovery time of 100–150 ns. Thermal design is enabled by low RthJC (0.9 °C/W) and specified RthJA of 40 °C/W on 1"² FR-4 PCB - critical for thermally constrained high-efficiency converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports primary-side switching in 115/230 VAC offline flyback and forward converters without derating. |
| RDS(on) | 0.038 Ω @ VGS = 10 V, ID = 15 A - enables <1.5 W conduction loss at 40 A in hard-switched topologies. |
| ID (continuous) | 40 A @ TC = 25 °C - delivers high current density in compact TO-263 footprint with heatsink mounting. |
| TJ max | 175 °C - allows operation in high-ambient industrial and telecom power supplies without thermal throttling. |
| Qg | 38–60 nC - balances switching speed and gate driver power requirements for 100–500 kHz PWM designs. |
| EAS | 80 mJ (L = 0.1 mH) - provides ruggedness against inductive switching transients in non-synchronous topologies. |
| RthJC | 0.9 °C/W - enables direct heatsink coupling for >150 W power handling with minimal thermal interface resistance. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, isolated heat sink tab (drain-connected), 3-lead configuration with Gull-wing leads. Dimensions per Vishay Doc. 71198: D = 0.340–0.380", E = 0.380–0.410", L = 0.575–0.625".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main high-side current path terminal | Connected to heat sink tab; carries full load current and must be routed with low-inductance copper pour for EMI control. |
| G (Gate) | Control input for channel modulation | Requires <2.5 Ω series gate resistor to damp ringing; sensitive to dv/dt-induced turn-on due to Crss = 190 pF. |
| S (Source) | Reference node for gate drive and current sensing | Must be low-impedance return path; used for source-shunt current monitoring in primary-side regulation schemes. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit vs. planar MOSFETs, improving efficiency in high-frequency SMPS. |
| 175 °C TJ rating | Enables smaller heatsinks and higher power density in sealed enclosures without forced air cooling. |
| PWM-optimized switching | Low Crss/Ciss ratio (190/2500 pF) reduces Miller effect, supporting stable 500 kHz+ operation with minimal gate oscillation. |
| Lead (Pb)-free (E3) | Meets RoHS Directive 2002/95/EC; compatible with standard SnAgCu reflow profiles (peak 260 °C). |
| Repetitive avalanche rated | Guaranteed 80 mJ single-pulse avalanche energy allows safe operation during transformer reset or short-circuit events. |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with active clamp flyback topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 30–50 A peak currents at 150 V bus. Use Value: Low RDS(on) and 175 °C rating enable >96% efficiency at full load while maintaining thermal margin on 2-layer PCB. |
Use Scenario: 24 V/20 A industrial AC-DC adapter with wide-input range (85–264 VAC) and overtemperature protection. IC Role / Device Role / Timing Role: Main switching element in discontinuous conduction mode (DCM) flyback converter. Use Value: Robust avalanche capability ensures reliability during line surges and output short circuits without external snubbers. |
| Telecom Rectifier Module | LED Driver Power Stage |
Use Scenario: -48 V telecom rectifier module requiring high-reliability 150 V primary switch with 10-year field life. IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter primary leg with synchronous rectification secondary. Use Value: 0.9 °C/W RthJC enables direct heatsink mounting and stable operation at 70 °C ambient with no fan. |
Use Scenario: High-bay LED driver with integrated PFC + flyback, operating in harsh warehouse environments. IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback stage driving 150 W LED load. Use Value: Fast trr (100–150 ns) and low Qrr (0.25–0.6 µC) minimize body-diode losses during valley switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP40NF15 | Higher RDS(on) = 0.045 Ω @ 10 V; RthJC = 1.2 °C/W; same TO-220 package (not surface-mount). | Limited to lower-power or through-hole designs; lacks D2PAK thermal performance and RoHS E3 marking. | Select when legacy through-hole assembly is required and thermal budget allows +33% conduction loss. |
| IRF640NPBF | Lower voltage rating (200 V), higher RDS(on) = 0.18 Ω @ 10 V; TO-220; no avalanche rating specified. | Not suitable for 150 V bus applications requiring margin; unsuitable for repetitive avalanche stress. | Only consider for low-current (<10 A), low-frequency (<100 kHz) linear or switching applications where cost dominates. |
Compared with STP40NF15 and IRF640NPBF, SUM40N15-38-E3 offers superior thermal performance (0.9 vs. ≥1.2 °C/W), lower conduction loss (0.038 Ω), and guaranteed 80 mJ avalanche energy - making it the preferred choice for high-density, high-reliability 150 V primary-side switching.
Availability
SUM40N15-38-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for SUM40N15-38-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SUM40N15-38-E3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered for high-frequency, high-efficiency primary-side switching in offline AC-DC conversion systems.
FAQ
What is the maximum continuous drain current for SUM40N15-38-E3 at 125 °C case temperature?
The SUM40N15-38-E3 supports 23 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be verified against actual board layout and heatsinking in the target application. The SUM40N15-38-E3 maintains safe operation up to 175 °C junction temperature under pulsed conditions.
Does SUM40N15-38-E3 have a specified avalanche energy rating?
Yes, the SUM40N15-38-E3 is rated for 80 mJ repetitive avalanche energy with L = 0.1 mH, tested per JEDEC standards. This rating applies under pulse conditions (duty cycle ≤ 1 %) and is critical for reliability in non-synchronous flyback and forward converters where the MOSFET absorbs inductive energy during reset. The SUM40N15-38-E3 datasheet confirms this value in the Absolute Maximum Ratings section.
What is the gate threshold voltage range for SUM40N15-38-E3?
The gate threshold voltage (VGS(th)) for SUM40N15-38-E3 is specified as 2.0 V minimum to 4.0 V maximum at TJ = 25 °C, measured with VDS = VGS and ID = 250 µA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity. The SUM40N15-38-E3 exhibits stable threshold behavior across its full operating temperature range (-55 to 175 °C).
Can SUM40N15-38-E3 be used in synchronous rectification topologies?
No, the SUM40N15-38-E3 is designed as a primary-side high-side switch and is not optimized for synchronous rectification. Its body diode forward voltage (1.0–1.5 V) and reverse recovery characteristics (trr = 100–150 ns) are typical of standard power MOSFETs, not low-VF, fast-recovery synchronous rectifiers. For secondary-side synchronous rectification, dedicated devices like Vishay SiR626DP should be selected instead of SUM40N15-38-E3.
What is the recommended PCB pad layout for SUM40N15-38-E3 in TO-263 package?
Vishay recommends minimum pad dimensions of 0.420" × 0.355" (10.67 mm × 9.02 mm) for the drain tab and 0.145" × 0.135" (3.68 mm × 3.43 mm) for gate and source pads, per Doc. 73397. A thermal relief pattern with ≥4 thermal spokes is advised for soldering reliability. The SUM40N15-38-E3 requires adequate copper area on inner layers for heat spreading, especially when operating above 100 W dissipation.
SUM40N15-38-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM40N15-38-E3 FAQ
1.How can I place an order for SUM40N15-38-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM40N15-38-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM40N15-38-E3 reliable?
The price and inventory of SUM40N15-38-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM40N15-38-E3 is usually 5 days.
3.What payment methods are accepted for SUM40N15-38-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM40N15-38-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM40N15-38-E3?
SUM40N15-38-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM40N15-38-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM40N15-38-E3?
For technical support, including SUM40N15-38-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM40N15-38-E3 requirements.
6.How does Aetrix verify that SUM40N15-38-E3 is sourced from the original manufacturer or authorized distributors?
All SUM40N15-38-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM40N15-38-E3 meets industry standards.
7.What is the process for return or replacement of SUM40N15-38-E3?
All SUM40N15-38-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM40N15-38-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM40N15-38-E3 part is unused and in its original packaging.
Return procedure for SUM40N15-38-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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