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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM50020E-GE3

Name: SUM50020E-GE3
Brand: Vishay Siliconix
SKU: SUM50020E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM50020E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM50020E-GE3.pdf

Description:: MOSFET N-CH 60V 120A TO263

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Product details

Overview

SUM50020E-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® power MOSFET in TO-263 (D2PAK) package, rated for 120 A continuous drain current at T_C = 25 °C, with R_DS(on) of 2.2 mΩ at V_GS = 10 V and Q_g of 128 nC - optimized for high-efficiency secondary-side synchronous rectification in server PSUs and industrial DC/DC converters.

For engineers reviewing the SUM50020E-GE3 datasheet, SUM50020E-GE3 pinout, SUM50020E-GE3 application, or SUM50020E-GE3 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 2–4 V), low Q_gd/Q_gs ratio (< 0.25) for fast switching, 175 °C max junction temperature, and 100 % UIS testing for ruggedness in motor drive and battery management systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and high current density in a surface-mount TO-263 package. Its dynamic parameters - C_iss = 11,150 pF, C_oss = 4255 pF, and Crss = 420 pF - support efficient operation in hard-switched and resonant topologies up to 300 kHz.

The device features integrated body diode with V_SD = 0.8–1.5 V at I_F = 10 A and t_rr = 120–180 ns, enabling reliable freewheeling in half-bridge and H-bridge motor drives. Thermal resistance R_thJC = 0.4 °C/W ensures effective heat transfer to the PCB copper plane under high-power conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V input bus architectures with 20 % safety margin against transients
R_DS(on) max @ V_GS = 10 V	2.2 mΩ - enables <1.5 W conduction loss at 120 A, critical for high-current PSU rails
Q_g typ.	128 nC - determines gate driver power requirement and switching loss in 100–300 kHz applications
I_D continuous @ T_C = 25 °C	120 A - defines maximum steady-state current capability with adequate heatsinking
Junction temp. max	175 °C - allows operation in sealed industrial enclosures without active cooling
R_thJC	0.4 °C/W - enables direct thermal coupling to heatsink or copper plane for >300 W dissipation
V_GS(th)	2–4 V - ensures full enhancement with standard 3.3 V or 5 V logic-level drivers

Pinout & Package

TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to D pin and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts logic-level voltage (2–4 V threshold); requires 128 nC charge for full turn-on
D	Drain (high-side switch node)	Connected to exposed metal tab; carries full load current and dissipates heat directly to PCB/heatsink
S	Source (return path)	Reference node for gate drive; ties to power ground or low-side switch source in half-bridge

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 2.2 mΩ R_DS(on) in TO-263, reducing conduction loss by >30 % vs. planar MOSFETs at same rating
Q_gd/Q_gs < 0.25	Minimizes Miller plateau duration, enabling faster switching and reduced overlap loss in hard-switched converters
100 % UIS tested	Guarantees robustness against inductive switching stress (E_AS = 281 mJ), critical for motor drive and inverter reliability
Logic-level gate drive	Operates fully enhanced with 5 V microcontroller GPIO or dedicated gate driver ICs without level-shifting
175 °C max T_J	Supports extended lifetime in high-ambient environments such as enclosed power tools and EV charging modules

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V/200 A output LLC resonant converter. IC Role / Device Role / Timing Role: High-side N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: Achieves >97 % efficiency at full load by cutting conduction loss by 60 % versus 40 V Schottky, enabled by 2.2 mΩ R_DS(on) and 120 A rating.	Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC compressor (400 V DC bus, 30 A phase current). IC Role / Device Role / Timing Role: Fast-turning power switch controlling current flow through motor windings during PWM commutation. Use Value: Enables 20 kHz PWM operation with <100 ns fall time and low Q_gd, minimizing switching loss and audible noise in fan-cooled enclosures.
Battery Management System	Power Tool DC/DC Converter
Use Scenario: Bidirectional current control in 24 V Li-ion pack protection circuit with active balancing and discharge path. IC Role / Device Role / Timing Role: Load switch isolating battery from system during fault or deep discharge; also used as discharge FET. Use Value: Withstands 75 A avalanche current (I_AS) and 281 mJ single-pulse energy, eliminating need for external TVS in compact BMS layouts.	Use Scenario: Primary switch in 22 V nominal cordless drill buck converter supplying 5 V MCU and 12 V motor driver logic. IC Role / Device Role / Timing Role: High-current, high-duty-cycle switch operating continuously at 100–150 A peak during torque bursts. Use Value: Maintains stable R_DS(on) over -55 to +175 °C, ensuring consistent performance across battery temperature range without derating.

Server Power Supply

Industrial Motor Drive

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V/200 A output LLC resonant converter.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: Achieves >97 % efficiency at full load by cutting conduction loss by 60 % versus 40 V Schottky, enabled by 2.2 mΩ R_DS(on) and 120 A rating.

Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC compressor (400 V DC bus, 30 A phase current).

IC Role / Device Role / Timing Role: Fast-turning power switch controlling current flow through motor windings during PWM commutation.

Use Value: Enables 20 kHz PWM operation with <100 ns fall time and low Q_gd, minimizing switching loss and audible noise in fan-cooled enclosures.

Battery Management System

Power Tool DC/DC Converter

Use Scenario: Bidirectional current control in 24 V Li-ion pack protection circuit with active balancing and discharge path.

IC Role / Device Role / Timing Role: Load switch isolating battery from system during fault or deep discharge; also used as discharge FET.

Use Value: Withstands 75 A avalanche current (I_AS) and 281 mJ single-pulse energy, eliminating need for external TVS in compact BMS layouts.

Use Scenario: Primary switch in 22 V nominal cordless drill buck converter supplying 5 V MCU and 12 V motor driver logic.

IC Role / Device Role / Timing Role: High-current, high-duty-cycle switch operating continuously at 100–150 A peak during torque bursts.

Use Value: Maintains stable R_DS(on) over -55 to +175 °C, ensuring consistent performance across battery temperature range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 132 nC; TO-220 package; no 100 % UIS test specified	Higher conduction loss and through-hole mounting limit thermal performance in high-density designs	Prefer SUM50020E-GE3 where board space, thermal management, and avalanche ruggedness are critical
STL220N6F7	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 145 nC; TO-263; 175 °C T_J; but V_DS = 60 V only at T_J ≤ 150 °C	Marginally higher gate charge increases driver losses; lower V_DS rating at elevated temperature reduces safe operating area	Choose SUM50020E-GE3 for full 60 V rating across full temperature range and proven UIS robustness

Compared with IRFB4115PBF and STL220N6F7, SUM50020E-GE3 delivers superior thermal resistance (R_thJC = 0.4 °C/W), tighter V_GS(th) distribution (2–4 V), and documented 100 % UIS screening - making it the preferred choice for high-reliability, high-power-density industrial and computing applications requiring long-term stability.

Availability

SUM50020E-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and battery management systems requiring stable component supply, long-lifecycle assurance, and traceable sourcing from Vishay's qualified manufacturing sites.

Supply support for SUM50020E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SUM series targets high-current, high-voltage power switching applications - designed specifically for demanding roles in server PSUs, industrial inverters, and automotive-grade power tools where low R_DS(on), fast switching, and thermal resilience are essential.

FAQ

What is the maximum continuous drain current rating for SUM50020E-GE3 at 70 °C case temperature?

The SUM50020E-GE3 is rated for 120 A continuous drain current at both T_C = 25 °C and T_C = 70 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_thJC of 0.4 °C/W, allowing sustained high-current operation without derating up to 70 °C case temperature when properly mounted on a thermally optimized PCB.

Does SUM50020E-GE3 support logic-level gate drive, and what is its gate threshold voltage range?

Yes, SUM50020E-GE3 supports logic-level gate drive with a guaranteed V_GS(th) range of 2 V to 4 V at I_D = 250 μA. This enables full enhancement using standard 3.3 V or 5 V microcontroller outputs or gate drivers without requiring external level shifters, simplifying control circuitry in compact power tool and DC/DC converter designs.

What is the avalanche energy rating of SUM50020E-GE3, and is it production-tested?

The SUM50020E-GE3 has a single-pulse avalanche energy rating (E_AS) of 281 mJ at I_AS = 75 A and L = 0.1 mH. Crucially, the datasheet states "100 % UIS tested", meaning every unit undergoes unclamped inductive switching validation - a key differentiator for reliability-critical motor drive and inverter applications where transient overvoltage events occur.

How does the Q_gd/Q_gs ratio of SUM50020E-GE3 impact switching performance?

The SUM50020E-GE3 features a Q_gd/Q_gs ratio < 0.25, which significantly shortens the Miller plateau duration during turn-off. This reduces switching transition time and overlap loss, especially in high-frequency (200–300 kHz) hard-switched topologies like synchronous buck converters - directly improving efficiency and reducing gate driver thermal load in server PSU designs.

What package type and thermal characteristics define the mechanical interface of SUM50020E-GE3?

SUM50020E-GE3 uses the TO-263 (D2PAK) package with an exposed drain tab. Its thermal resistance is R_thJC = 0.4 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount). The large copper tab must be soldered to a minimum 1" × 1" FR4 copper area (2 oz) per Vishay's recommended pad layout to achieve rated power dissipation of 375 W at T_C = 25 °C.

SUM50020E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11150 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM50020E-GE3 FAQ

1.How can I place an order for SUM50020E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM50020E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM50020E-GE3 reliable?

The price and inventory of SUM50020E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM50020E-GE3 is usually 5 days.

3.What payment methods are accepted for SUM50020E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM50020E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM50020E-GE3?

SUM50020E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM50020E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM50020E-GE3?

For technical support, including SUM50020E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM50020E-GE3 requirements.

6.How does Aetrix verify that SUM50020E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM50020E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM50020E-GE3 meets industry standards.

7.What is the process for return or replacement of SUM50020E-GE3?

All SUM50020E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM50020E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM50020E-GE3 part is unused and in its original packaging.

Return procedure for SUM50020E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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