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Vishay Siliconix SUM50020EL-GE3
- Part No.:
- SUM50020EL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM50020EL-GE3.pdf
- Description:
- MOSFET N-CH 60V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,467
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Product details
Overview
SUM50020EL-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® power MOSFET optimized for high-current, low-RDS(on) switching in DC/DC converters and motor drives. It delivers 120 A continuous drain current at TJ = 150 °C, features RDS(on) = 2.1 mΩ at VGS = 10 V and 2.6 mΩ at VGS = 4.5 V, and supports logic-level gate drive with VGS(th) = 1.2–2.5 V - enabling direct interface with microcontrollers in battery-powered power tools.
For engineers reviewing the SUM50020EL-GE3 datasheet, SUM50020EL-GE3 pinout, SUM50020EL-GE3 application, or SUM50020EL-GE3 equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 126 nC total gate charge, Qgd/Qgs ratio < 0.25 for fast switching control, and 175 °C maximum junction temperature rating for high-reliability industrial operation.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 281 mJ). Its dynamic parameters - Ciss = 11,113 pF, Coss = 4625 pF, and Crss = 475 pF - are optimized for hard-switched synchronous rectification where voltage-dependent capacitance linearity reduces switching loss.
The device integrates a body diode with trr = 120–180 ns and Qrr = 0.287–0.430 μC, supporting efficient reverse recovery in bidirectional power stages. Thermal design is anchored by a TO-263 (D2PAK) package with exposed drain tab, enabling PCB-mounted heatsinking and delivering 375 W maximum power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - defines maximum blocking voltage in high-side switch or synchronous rectifier configurations |
| RDS(on) | 2.1 mΩ @ VGS = 10 V - enables ≤ 25.2 W conduction loss at 120 A, critical for 48 V motor drive efficiency |
| ID (cont) | 120 A @ TJ = 150 °C - supports high-current DC/AC inverters without forced air cooling |
| Qg | 126 nC - determines gate driver power requirement and switching speed in 100 kHz+ DC/DC designs |
| RthJC | 0.4 °C/W - allows direct thermal coupling to heatsink via PCB copper pour or mechanical mounting |
| EAS | 281 mJ - ensures single-pulse avalanche survivability during inductive load turn-off transients |
| VGS(th) | 1.2–2.5 V - guarantees full enhancement with 3.3 V or 5 V logic-level microcontroller outputs |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, with exposed drain tab for thermal and electrical connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting logic-level voltage; requires low-inductance routing due to 126 nC Qg |
| D | Drain | High-side switching node; electrically and thermally connected to exposed metal tab |
| S | Source | Power return path; referenced to controller ground; used for current sensing in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 2.1 mΩ RDS(on) in TO-263 package - 30 % lower than planar equivalents at same voltage class |
| Qgd/Qgs ratio < 0.25 | Reduces Miller plateau duration, improving dV/dt immunity and enabling faster, more predictable turn-off |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (0.32–3.2 Ω) and unclamped inductive switching robustness per unit |
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V - eliminates need for gate driver boost circuitry in 5 V systems |
| 175 °C max TJ | Supports operation in sealed enclosures or high-ambient environments without derating below 120 A |
Applications
| Secondary Synchronous Rectification | Power Tool Motor Drive |
|---|---|
Use Scenario: High-efficiency 12–48 V secondary-side rectification in isolated LLC resonant converters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched complementary to primary-side FET. Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >96 % system efficiency at 100 A output. | Use Scenario: High-torque BLDC motor commutation in cordless drills and impact drivers. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch; driven by 3-phase gate driver IC. Use Value: Delivers 120 A peak current with <2.6 mΩ on-resistance at 4.5 V gate drive, minimizing heat generation during burst-mode operation. |
| DC/AC Inverter Stage | Battery Management System Switch |
Use Scenario: 60 V-class H-bridge in portable solar inverters and UPS modules. IC Role / Device Role / Timing Role: High-side and low-side switching element; operated in PWM mode at 16–20 kHz. Use Value: Avalanche-rated (75 A IAS, 281 mJ EAS) withstands inductive kickback during fault conditions without snubber circuits. | Use Scenario: Main discharge/charge FET in 13S–16S lithium-ion battery packs for e-bikes and energy storage. IC Role / Device Role / Timing Role: Bidirectional current-handling protection switch; controlled by battery monitor IC. Use Value: Body diode forward voltage of 0.8–1.5 V at 10 A enables low-loss passive charging path when gate is off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; Qg = 131 nC; TO-220 package | Higher conduction loss and larger footprint; lacks logic-level drive (VGS(th) = 2–4 V) | Choose for cost-sensitive, lower-current (<60 A) designs where TO-220 mounting is preferred. |
| STL220N6F7 | RDS(on) = 1.7 mΩ @ 10 V; Qg = 145 nC; PowerFLAT 8x8 package | Lower RDS(on) but higher gate charge; surface-mount only; no exposed drain tab for heatsinking | Choose for space-constrained, high-density PCBs where thermal path is managed via internal copper layers. |
Compared with IRF1404ZPBF and STL220N6F7, SUM50020EL-GE3 offers the optimal balance of logic-level drive, 2.1 mΩ on-resistance, and TO-263 thermal performance - making it preferred for 100+ A industrial motor drives and synchronous rectifiers requiring both electrical and thermal headroom.
Availability
SUM50020EL-GE3 is available at Aetrix Electronics and suitable for power supply secondary rectification, battery management systems, and motor drive switch applications requiring stable component supply across multi-year production cycles.
Supply support for SUM50020EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SUM series targets high-current, low-voltage power switching applications - designed specifically for synchronous rectification, motor control, and DC/DC conversion where RDS(on), thermal resistance, and gate drive compatibility are critical.
FAQ
What is the maximum continuous drain current rating for SUM50020EL-GE3 at 70 °C case temperature?
The SUM50020EL-GE3 supports 120 A continuous drain current at TC = 70 °C, matching its rating at 25 °C due to its robust thermal design and 0.4 °C/W RthJC. This reflects Vishay's derating curve where current remains flat up to 125 °C case temperature before linear reduction begins - confirmed in the Absolute Maximum Ratings table on page 1 of document 68587.
Does SUM50020EL-GE3 require a gate driver IC when used with a 3.3 V microcontroller?
Yes, SUM50020EL-GE3 can be directly driven by a 3.3 V microcontroller because its gate threshold voltage VGS(th) ranges from 1.2 V to 2.5 V, and it achieves RDS(on) = 2.6 mΩ at VGS = 4.5 V. At 3.3 V, it operates in the linear region with higher on-resistance (~3.5 mΩ estimated), so full enhancement requires ≥4.5 V - a level-shifting gate driver is recommended for optimal efficiency in high-current applications.
What is the avalanche energy rating of SUM50020EL-GE3, and under what test conditions is it specified?
The SUM50020EL-GE3 has a single-pulse avalanche energy rating EAS of 281 mJ, measured under conditions of L = 0.1 mH, IAS = 75 A, and pulse width ≤ 300 μs (duty cycle ≤ 2 %), as specified in the Absolute Maximum Ratings table on page 1 of document 68587. This rating validates ruggedness against inductive switching transients in motor and converter applications.
How does the thermal resistance RthJA of SUM50020EL-GE3 compare to its RthJC, and what does that imply for PCB layout?
SUM50020EL-GE3 has RthJA = 40 °C/W (PCB mount) versus RthJC = 0.4 °C/W - a 100× difference confirming that effective heatsinking must occur through the drain tab to a large copper area or external heatsink. PCB layout must allocate ≥1"² of 2 oz. copper connected to the tab; relying solely on ambient convection yields excessive junction temperature rise.
Is SUM50020EL-GE3 suitable for use in automotive-grade power modules?
SUM50020EL-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and consumer applications per Vishay's material categorization and reliability documentation. While its 175 °C TJ and avalanche ratings meet some automotive thermal requirements, it lacks the extended temperature testing, failure analysis reporting, and PPAP documentation required for automotive power modules - use only after full qualification per customer-specific standards.
SUM50020EL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 126 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11113 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM50020EL-GE3 FAQ
1.How can I place an order for SUM50020EL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM50020EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM50020EL-GE3 reliable?
The price and inventory of SUM50020EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM50020EL-GE3 is usually 5 days.
3.What payment methods are accepted for SUM50020EL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM50020EL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM50020EL-GE3?
SUM50020EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM50020EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM50020EL-GE3?
For technical support, including SUM50020EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM50020EL-GE3 requirements.
6.How does Aetrix verify that SUM50020EL-GE3 is sourced from the original manufacturer or authorized distributors?
All SUM50020EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM50020EL-GE3 meets industry standards.
7.What is the process for return or replacement of SUM50020EL-GE3?
All SUM50020EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM50020EL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM50020EL-GE3 part is unused and in its original packaging.
Return procedure for SUM50020EL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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