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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM50P10-42-E3

Name: SUM50P10-42-E3
Brand: Vishay Siliconix
SKU: SUM50P10-42-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM50P10-42-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM50P10-42-E3.pdf

Description:: MOSFET N-CH 100V 36A TO263

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Product details

Overview

SUM50P10-42-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -100 V drain-source voltage, with R_DS(on) of 0.042 Ω at V_GS = -10 V and -36 A continuous drain current at T_C = 25 °C. It is optimized for high-efficiency load switching and ORing applications in industrial power supplies and telecom DC/DC modules.

For engineers reviewing the SUM50P10-42-E3 datasheet, SUM50P10-42-E3 pinout, SUM50P10-42-E3 application, or SUM50P10-42-E3 equivalent, key selection criteria include its -100 V V_DS, low gate charge (54 nC at V_GS = -4.5 V), 1.2 °C/W junction-to-case thermal resistance, RoHS-compliant TO-263 (D2PAK) package, and verified avalanche energy rating of 80 mJ.

Technical Context

This device employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage range (-1 V to -3 V) ensures reliable turn-on with standard logic-level gate drivers, while the 4600 pF input capacitance and 175 pF reverse transfer capacitance support stable operation in hard-switched topologies.

The integrated body diode exhibits 60–90 ns reverse recovery time and 150–225 nC reverse recovery charge, enabling use in synchronous rectification and bidirectional power flow circuits where diode conduction is unavoidable. Thermal design is facilitated by direct case mounting and a low R_thJC of 1.2 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - supports 48 V and 60 V bus systems with ≥2× voltage margin against transients
R_DS(on) max	0.042 Ω at V_GS = -10 V - enables <1.5 W conduction loss at 14 A continuous current
I_D continuous	-36 A at T_C = 25 °C - delivers high current density in surface-mount TO-263 footprint
Q_g typ	54 nC at V_GS = -4.5 V - reduces gate drive power and enables efficient 100–500 kHz switching
E_AS	80 mJ - provides robust single-pulse avalanche capability for inductive load switching
R_thJC	1.2 °C/W - allows >100 W power dissipation with moderate heatsinking at case temperature
V_GS(th)	-1 V to -3 V - ensures full enhancement with -4.5 V or -5 V logic-level gate drive

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, thermally enhanced with exposed drain tab. Dimensions per Vishay Doc. #71198: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), 3-lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Current return path for P-channel conduction	Connected to system ground or higher potential rail; electrically tied to PCB copper pour for thermal management
Gate (G)	Control electrode for channel formation	Requires negative voltage relative to source to turn on; low 0.9–9.2 Ω gate resistance minimizes ringing
Drain (D)	Main current-carrying terminal (exposed tab)	Internally connected to metal tab; must be soldered to large copper area for thermal and electrical integrity

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size and voltage rating
100 % R_g and UIS tested	Ensures gate robustness and unclamped inductive switching reliability across production lots
RoHS-compliant, lead-free	Meets Directive 2011/65/EU; Pb-free plating compatible with standard SnAgCu reflow profiles
Low Q_gd/Q_g ratio	26 nC / 54 nC = 0.48 - improves Miller immunity and reduces switching instability in high-dV/dt environments
Body diode softness (Q_rr = 150–225 nC)	Minimizes voltage overshoot and EMI during commutation in ORing and reverse polarity protection

Applications

Industrial Power Supply Load Switch	Telecom 48 V ORing Circuit
Use Scenario: Hot-swap insertion of redundant DC/DC converters in 48 V telecom shelf systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in parallel power path control. Use Value: Eliminates 0.4–0.8 V forward drop of Schottky diodes, reducing power loss by >3 W per 10 A branch and enabling compact thermal design.	Use Scenario: Redundant 48 V input supply selection with automatic failover in base station power distribution units. IC Role / Device Role / Timing Role: High-side switch controlling power path from primary/backup source to common bus. Use Value: Fast 100–150 ns fall time and low 0.042 Ω R_DS(on) minimize voltage imbalance and cross-conduction risk during switchover.
Automotive Body Control Module	Server PSU Input Protection
Use Scenario: Reverse polarity and overvoltage protection for 24 V battery-fed ECUs in commercial vehicles. IC Role / Device Role / Timing Role: High-side protection switch placed between battery feed and downstream regulator. Use Value: -100 V V_DS withstands load dump transients up to ISO 7637-2 Pulse 5a (120 V), ensuring system survival without external TVS.	Use Scenario: Inrush current limiting and short-circuit isolation in 12 V/48 V intermediate bus converters for AI accelerators. IC Role / Device Role / Timing Role: Load switch controlled via PMBus or GPIO to enable/disable power rails dynamically. Use Value: 80 mJ single-pulse avalanche rating absorbs energy from output short events without failure, improving field reliability.

Industrial Power Supply Load Switch

Telecom 48 V ORing Circuit

Use Scenario: Hot-swap insertion of redundant DC/DC converters in 48 V telecom shelf systems.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in parallel power path control.

Use Value: Eliminates 0.4–0.8 V forward drop of Schottky diodes, reducing power loss by >3 W per 10 A branch and enabling compact thermal design.

Use Scenario: Redundant 48 V input supply selection with automatic failover in base station power distribution units.

IC Role / Device Role / Timing Role: High-side switch controlling power path from primary/backup source to common bus.

Use Value: Fast 100–150 ns fall time and low 0.042 Ω R_DS(on) minimize voltage imbalance and cross-conduction risk during switchover.

Automotive Body Control Module

Server PSU Input Protection

Use Scenario: Reverse polarity and overvoltage protection for 24 V battery-fed ECUs in commercial vehicles.

IC Role / Device Role / Timing Role: High-side protection switch placed between battery feed and downstream regulator.

Use Value: -100 V V_DS withstands load dump transients up to ISO 7637-2 Pulse 5a (120 V), ensuring system survival without external TVS.

Use Scenario: Inrush current limiting and short-circuit isolation in 12 V/48 V intermediate bus converters for AI accelerators.

IC Role / Device Role / Timing Role: Load switch controlled via PMBus or GPIO to enable/disable power rails dynamically.

Use Value: 80 mJ single-pulse avalanche rating absorbs energy from output short events without failure, improving field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 0.2 Ω @ V_GS = -10 V; slower Q_g = 120 nC; TO-220 package	Higher conduction loss; unsuitable for high-frequency or space-constrained designs	Select when cost sensitivity outweighs efficiency and layout density requirements
SiHP22N100CL	N-channel 100 V, R_DS(on) = 0.12 Ω @ V_GS = -10 V; requires high-side gate driver	Needs bootstrap or isolated gate drive; not a direct replacement in high-side switch topology	Consider only if redesigning gate drive circuitry to leverage N-channel's lower R_DS(on)

Compared with IRF9540NPbF and SiHP22N100CL, SUM50P10-42-E3 offers superior power density and gate drive simplicity for high-side P-channel switching, delivering 4.8× lower R_DS(on) than IRF9540NPbF and eliminating gate driver complexity required by SiHP22N100CL.

Availability

SUM50P10-42-E3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom ORing circuits, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for SUM50P10-42-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUM series targets high-current, high-voltage P-channel switching applications, designed specifically for load switching, ORing, and reverse polarity protection in demanding industrial and telecom environments.

FAQ

What is the maximum continuous drain current for SUM50P10-42-E3 at 70 °C case temperature?

The SUM50P10-42-E3 supports -30 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating from -36 A at 25 °C reflects thermal limitations of the TO-263 package under elevated ambient or board temperature conditions. Designers must verify PCB copper area and airflow to sustain this current without exceeding 150 °C junction temperature.

Does SUM50P10-42-E3 require a negative gate drive voltage to operate?

Yes, SUM50P10-42-E3 is a P-channel MOSFET and requires V_GS ≤ -1 V (threshold) to turn on, with full enhancement achieved at V_GS = -4.5 V or -10 V. Gate drive must reference the source node; for high-side switching, this typically means pulling the gate to ground while the source sits at positive rail voltage. No negative supply rail is needed if source is grounded.

Can SUM50P10-42-E3 be used in avalanche mode repeatedly?

No - SUM50P10-42-E3 is rated for single-pulse avalanche energy (E_AS = 80 mJ), not repetitive avalanche. The datasheet specifies this under "Absolute Maximum Ratings" with note "a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %." Repeated avalanche operation risks parametric shift or catastrophic failure; proper snubbing or clamping is required for inductive switching.

What is the thermal resistance from junction to ambient (R_thJA) for SUM50P10-42-E3 on a standard PCB?

The SUM50P10-42-E3 has R_thJA = 40 °C/W when mounted on a 1" square FR-4 PCB, as stated in the Thermal Resistance Ratings table. This value assumes minimal copper area; actual R_thJA improves significantly with larger thermal pads and internal planes. For thermal design, junction temperature should be calculated using T_J = T_A + P_D × R_thJA, where P_D is total power dissipation.

Is SUM50P10-42-E3 suitable for synchronous rectification in a buck converter?

While SUM50P10-42-E3 features a low R_DS(on) and fast switching (t_f = 100–150 ns), it is not recommended for synchronous rectification in buck converters due to its P-channel topology. N-channel devices offer lower R_DS(on) and better gate drive efficiency in low-side positions. SUM50P10-42-E3 is best applied in high-side load switches or ORing where P-channel simplifies gate drive.

SUM50P10-42-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 18.8W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM50P10-42-E3 FAQ

1.How can I place an order for SUM50P10-42-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM50P10-42-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM50P10-42-E3 reliable?

The price and inventory of SUM50P10-42-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM50P10-42-E3 is usually 5 days.

3.What payment methods are accepted for SUM50P10-42-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM50P10-42-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM50P10-42-E3?

SUM50P10-42-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM50P10-42-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM50P10-42-E3?

For technical support, including SUM50P10-42-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM50P10-42-E3 requirements.

6.How does Aetrix verify that SUM50P10-42-E3 is sourced from the original manufacturer or authorized distributors?

All SUM50P10-42-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM50P10-42-E3 meets industry standards.

7.What is the process for return or replacement of SUM50P10-42-E3?

All SUM50P10-42-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM50P10-42-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM50P10-42-E3 part is unused and in its original packaging.

Return procedure for SUM50P10-42-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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