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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM60030E-GE3

Name: SUM60030E-GE3
Brand: Vishay Siliconix
SKU: SUM60030E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM60030E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM60030E-GE3.pdf

Description:: MOSFET N-CH 80V 120A TO263

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Product details

Overview

SUM60030E-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in TO-263 package, delivering 120 A continuous drain current at T_J = 150 °C, 3.2 mΩ R_DS(on) at V_GS = 10 V, and 94 nC total gate charge - optimized for high-efficiency secondary-side synchronous rectification in server and telecom power supplies.

For engineers reviewing the SUM60030E-GE3 datasheet, SUM60030E-GE3 pinout, SUM60030E-GE3 application, or SUM60030E-GE3 equivalent, key selection criteria include its low Q_gd (10 nC typ.), 175 °C max junction temperature, 100 % UIS tested ruggedness, and suitability for DC/DC converters, motor drive switches, and battery management e-fuse circuits.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching with minimized Miller charge. Its 0.4 °C/W junction-to-case thermal resistance enables high-power operation when mounted on heatsink-equipped PCBs.

The device features a robust body diode with 126 ns reverse recovery time and 0.315 μC Q_rr, supporting hard-switched and synchronous rectifier topologies. Gate threshold voltage is specified between 2 V and 4 V, ensuring reliable turn-on with standard 5 V or 10 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus systems with 20 % derating margin for transient spikes
R_DS(on) max @ V_GS = 10 V	3.2 mΩ - enables <1.2 W conduction loss at 20 A, critical for high-current DC/DC output stages
Q_g typ.	94 nC - determines gate driver power requirement and switching transition time in hard-switched designs
I_D continuous @ T_C = 25 °C	120 A - requires minimum 1" × 1" 2 oz copper pad per Vishay thermal guidelines for safe operation
R_thJC	0.4 °C/W - allows direct heatsink mounting to sustain >300 W power dissipation without exceeding 175 °C T_J
V_GS(th)	2–4 V - ensures compatibility with 3.3 V, 5 V, and 10 V gate drivers without level-shifting circuitry
E_AS	245 mJ - provides single-pulse avalanche energy rating for inductive load switching reliability

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated heat sink tab (drain-connected), 3-lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V V_GS; 1.4 Ω max gate resistance affects turn-on/off speed
D	Drain	Main power output; electrically connected to heat sink tab; carries full load current and avalanche energy
S	Source	Power return path; referenced to control ground; used for current sensing and gate drive return

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 3.2 mΩ R_DS(on) in TO-263, reducing conduction losses by >35 % vs. planar MOSFETs at same voltage rating
100 % R_g and UIS tested	Guarantees gate resistance consistency and unclamped inductive switching robustness across all production units
Very low Q_gd (10 nC typ.)	Minimizes Miller plateau time, enabling faster switching and reduced overlap loss in synchronous rectifiers
175 °C max junction temperature	Supports operation in thermally constrained environments such as sealed power modules and high-density server PSUs
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and Vishay's material compliance standard #99912

Applications

Server Secondary-Side Rectification	Industrial Motor Drive Switch
Use Scenario: High-current 12 V output stage in 80 PLUS Titanium AC/DC power supplies for data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes to reduce forward voltage drop and improve efficiency above 95 %. Use Value: 3.2 mΩ R_DS(on) cuts conduction loss by ~60 % vs. 40 V Schottky, directly increasing full-load efficiency by 0.8–1.2 %.	Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers for cordless power tools. IC Role / Device Role / Timing Role: Main power switch handling 100 A peak currents during acceleration bursts. Use Value: 245 mJ E_AS and 500 A I_DM support repeated inductive turn-off without failure under stall conditions.
Battery Management e-Fuse	DC/AC Inverter Bridge
Use Scenario: Overcurrent protection switch in 48 V Li-ion battery packs for energy storage systems. IC Role / Device Role / Timing Role: Load switch with fast fault response enabled by low Q_g and tight V_GS(th) distribution. Use Value: 94 nC Q_g allows sub-100 ns turn-off with standard gate drivers, limiting fault energy during short-circuit events.	Use Scenario: Low-side switch in 3-phase 400 V DC/AC inverters for solar microinverters and UPS systems. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 20–50 kHz with minimal switching loss. Use Value: 348 pF Crss and 10 nC Q_gd suppress dv/dt-induced shoot-through and reduce gate drive power by 25 % vs. legacy MOSFETs.

Server Secondary-Side Rectification

Industrial Motor Drive Switch

Use Scenario: High-current 12 V output stage in 80 PLUS Titanium AC/DC power supplies for data center servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes to reduce forward voltage drop and improve efficiency above 95 %.

Use Value: 3.2 mΩ R_DS(on) cuts conduction loss by ~60 % vs. 40 V Schottky, directly increasing full-load efficiency by 0.8–1.2 %.

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers for cordless power tools.

IC Role / Device Role / Timing Role: Main power switch handling 100 A peak currents during acceleration bursts.

Use Value: 245 mJ E_AS and 500 A I_DM support repeated inductive turn-off without failure under stall conditions.

Battery Management e-Fuse

DC/AC Inverter Bridge

Use Scenario: Overcurrent protection switch in 48 V Li-ion battery packs for energy storage systems.

IC Role / Device Role / Timing Role: Load switch with fast fault response enabled by low Q_g and tight V_GS(th) distribution.

Use Value: 94 nC Q_g allows sub-100 ns turn-off with standard gate drivers, limiting fault energy during short-circuit events.

Use Scenario: Low-side switch in 3-phase 400 V DC/AC inverters for solar microinverters and UPS systems.

IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 20–50 kHz with minimal switching loss.

Use Value: 348 pF Crss and 10 nC Q_gd suppress dv/dt-induced shoot-through and reduce gate drive power by 25 % vs. legacy MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1405PBF	R_DS(on) = 5.3 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; 175 °C T_J	Higher conduction and switching loss; limited to lower-frequency (<30 kHz) inverters due to slower switching	Choose IRF1405PBF only if TO-220 mechanical fit is required and thermal budget allows higher R_DS(on).
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 110 nC; PowerFLAT 8×8 package; no isolated tab	Lower R_DS(on) but requires PCB-level thermal vias; not suitable for direct heatsink mounting	Choose STL220N6F7 only for space-constrained, double-sided cooling designs where TO-263 mounting is impractical.

Compared with IRF1405PBF and STL220N6F7, SUM60030E-GE3 offers the optimal balance of ultra-low R_DS(on), moderate Q_g, and TO-263 thermal performance - making it preferred for high-current, heatsink-mounted synchronous rectification and motor drive applications requiring both efficiency and ruggedness.

Availability

SUM60030E-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SUM60030E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUM60030E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-efficiency power conversion in computing, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SUM60030E-GE3 at 70 °C case temperature?

The SUM60030E-GE3 supports 120 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design per Vishay's recommended 1" × 1" 2 oz copper pad and is validated for operation up to 175 °C junction temperature. Derating applies above 70 °C case temperature per the current de-rating curve on page 4 of the datasheet.

Does SUM60030E-GE3 have a fully rated avalanche capability, and what is its single-pulse energy limit?

Yes, SUM60030E-GE3 is 100 % unclamped inductive switching (UIS) tested. Its single-pulse avalanche energy (E_AS) is rated at 245 mJ with L = 0.1 mH, measured at T_C = 25 °C. This rating ensures reliable operation during inductive load switching transients in motor drive and DC/AC inverter applications without external snubbers.

What is the typical gate threshold voltage range for SUM60030E-GE3, and how does it affect gate drive design?

The SUM60030E-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This allows reliable turn-on with 5 V logic-level drivers while maintaining noise immunity. For full enhancement, V_GS ≥ 10 V is recommended to achieve the specified 3.2 mΩ R_DS(on), and gate drivers must supply ≥ ±20 V absolute maximum to avoid damage.

Can SUM60030E-GE3 be used in synchronous rectification circuits without external gate timing control?

No - SUM60030E-GE3 is a standard enhancement-mode MOSFET requiring active gate drive. It does not integrate synchronous rectifier control logic. In synchronous rectification, it must be paired with a dedicated controller (e.g., UCC24612 or MP6908) that senses V_DS and delivers precisely timed gate signals to replace the body diode conduction phase. The low Q_gd and fast switching enable high-frequency operation up to 1 MHz.

What is the thermal resistance from junction to ambient (R_thJA) for SUM60030E-GE3 under standard PCB mounting conditions?

The SUM60030E-GE3 has a junction-to-ambient thermal resistance (R_thJA) of 40 °C/W when mounted on a 1" × 1" FR4 PCB with 2 oz copper on both sides. This value assumes no external heatsink. With direct heatsink attachment to the drain-connected tab, R_thJC = 0.4 °C/W dominates thermal performance - enabling >300 W power dissipation when combined with a 0.5 °C/W heatsink assembly.

SUM60030E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 141 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7910 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM60030E-GE3 FAQ

1.How can I place an order for SUM60030E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM60030E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM60030E-GE3 reliable?

The price and inventory of SUM60030E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM60030E-GE3 is usually 5 days.

3.What payment methods are accepted for SUM60030E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM60030E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM60030E-GE3?

SUM60030E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM60030E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM60030E-GE3?

For technical support, including SUM60030E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM60030E-GE3 requirements.

6.How does Aetrix verify that SUM60030E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM60030E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM60030E-GE3 meets industry standards.

7.What is the process for return or replacement of SUM60030E-GE3?

All SUM60030E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM60030E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM60030E-GE3 part is unused and in its original packaging.

Return procedure for SUM60030E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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