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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM60N02-3M9P-E3

Name: SUM60N02-3M9P-E3
Brand: Vishay Siliconix
SKU: SUM60N02-3M9P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM60N02-3M9P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM60N02-3M9P-E3.pdf

Description:: MOSFET N-CH 20V 60A TO263

Quantity:: RFQ Add To RFQ list

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Inventory:3,858

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Product details

Overview

SUM60N02-3M9P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 60 A continuous drain current at 175 °C junction temperature, and 3.9 mΩ rDS(on) at VGS = 10 V. It features TO-263 (D2PAK) package with drain-connected tab and is used in high-efficiency OR-ing circuits requiring robust thermal performance.

For engineers reviewing the SUM60N02-3M9P-E3 datasheet, SUM60N02-3M9P-E3 pinout, SUM60N02-3M9P-E3 application, or SUM60N02-3M9P-E3 equivalent, key selection criteria include its 175 °C TJ rating, 100% UIS-tested ruggedness, 4.5 V logic-level gate drive capability, and low 5.2 mΩ on-resistance at 4.5 V - critical for hot-swap and redundant power path designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-fed power distribution. Its gate threshold voltage (1.0–3.0 V) enables reliable turn-on with standard logic-level drivers, while the 1.25 °C/W junction-to-case thermal resistance supports high-power operation when mounted on a PCB heatsink.

The device integrates a robust body diode with 0.85–1.5 V forward voltage at 20 A and 45–90 ns reverse recovery time, making it suitable for synchronous rectification and bidirectional current handling in OR-ing configurations without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 24 V nominal systems with margin
r_DS(on) @ 10 V	3.9 mΩ - Enables ≤ 15 W conduction loss at 60 A, reducing heatsink requirements
r_DS(on) @ 4.5 V	5.2 mΩ - Supports direct interface with 3.3 V/5 V microcontrollers without level-shifting
I_D (continuous)	60 A @ T_C = 25 °C - Package-limited current capacity for high-density board layouts
T_J max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments
R_thJC	1.25 °C/W - Enables efficient heat transfer to external heatsink via drain-tab mounting
Q_g	33–50 nC - Determines gate driver power requirement and switching speed trade-off

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, with exposed drain tab thermally and electrically connected to the drain terminal. Dimensions per Vishay Doc. 71198: 10.67 × 9.65 × 4.83 mm (L × W × H), lead pitch 2.54 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires <3 V threshold to ensure turn-on with 3.3 V logic
Pin 2 (S)	Source	Reference node for gate drive and current sensing; tied to system ground in low-side configuration
Pin 3 (D / Tab)	Drain	High-current output path; tab must be soldered to copper pour for thermal and electrical integrity

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest rDS(on) per die area among Vishay's 20 V MOSFETs, minimizing PCB footprint for high-current paths
100 % UIS tested	Guarantees avalanche energy handling up to 125 mJ, enabling robustness against inductive load transients
175 °C junction rating	Supports uninterrupted operation in automotive under-hood or industrial control cabinet environments
Drain-connected tab	Provides low-inductance, high-current path and direct thermal path to PCB copper, eliminating need for separate heatsink
RoHS-compliant, Pb-free	Meets global environmental compliance requirements without sacrificing thermal or electrical performance

Applications

Server OR-ing Circuit	Industrial Hot-Swap Module
Use Scenario: Dual 12 V power supplies feeding a single server backplane, where only one supply is active at a time to prevent backfeeding. IC Role / Device Role / Timing Role: N-channel MOSFET used as ideal diode in low-side OR-ing configuration, replacing Schottky diodes to reduce voltage drop and heat generation. Use Value: 5.2 mΩ rDS(on) at 4.5 V gate drive cuts conduction loss by >70% vs. 0.4 V Schottky, enabling higher efficiency and lower thermal stress in dense 1U chassis.	Use Scenario: Field-replaceable power module in programmable logic controller (PLC) rack, requiring live insertion without disrupting system operation. IC Role / Device Role / Timing Role: High-current MOSFET controlling power path during hot-plug sequencing, with integrated body diode supporting reverse current during insertion transient. Use Value: 175 °C TJ rating and 100% UIS testing ensure reliability during repeated hot-swap cycles with inrush current and bus voltage mismatch.
Telecom DC Power Distribution	Redundant Battery Backup System
Use Scenario: 48 V intermediate bus powering multiple isolated DC-DC converters in telecom line cards, with redundancy across two independent feeds. IC Role / Device Role / Timing Role: Low-Rds(on) MOSFET deployed in high-side OR-ing topology to isolate faulted input while maintaining output regulation. Use Value: 3.9 mΩ on-resistance at 10 V gate drive minimizes voltage drop (<240 mV at 60 A), preserving tight output voltage tolerance across full load range.	Use Scenario: Uninterruptible power supply (UPS) for network infrastructure, where lithium-ion battery pack connects in parallel with AC-DC converter via OR-ing path. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET managing charge/discharge paths between battery and system bus, leveraging intrinsic body diode for reverse conduction. Use Value: 0.85–1.5 V V_SD and 45–90 ns t_rr enable efficient reverse current flow during battery discharge, reducing need for external anti-parallel diode.

Server OR-ing Circuit

Industrial Hot-Swap Module

Use Scenario: Dual 12 V power supplies feeding a single server backplane, where only one supply is active at a time to prevent backfeeding.

IC Role / Device Role / Timing Role: N-channel MOSFET used as ideal diode in low-side OR-ing configuration, replacing Schottky diodes to reduce voltage drop and heat generation.

Use Value: 5.2 mΩ rDS(on) at 4.5 V gate drive cuts conduction loss by >70% vs. 0.4 V Schottky, enabling higher efficiency and lower thermal stress in dense 1U chassis.

Use Scenario: Field-replaceable power module in programmable logic controller (PLC) rack, requiring live insertion without disrupting system operation.

IC Role / Device Role / Timing Role: High-current MOSFET controlling power path during hot-plug sequencing, with integrated body diode supporting reverse current during insertion transient.

Use Value: 175 °C TJ rating and 100% UIS testing ensure reliability during repeated hot-swap cycles with inrush current and bus voltage mismatch.

Telecom DC Power Distribution

Redundant Battery Backup System

Use Scenario: 48 V intermediate bus powering multiple isolated DC-DC converters in telecom line cards, with redundancy across two independent feeds.

IC Role / Device Role / Timing Role: Low-Rds(on) MOSFET deployed in high-side OR-ing topology to isolate faulted input while maintaining output regulation.

Use Value: 3.9 mΩ on-resistance at 10 V gate drive minimizes voltage drop (<240 mV at 60 A), preserving tight output voltage tolerance across full load range.

Use Scenario: Uninterruptible power supply (UPS) for network infrastructure, where lithium-ion battery pack connects in parallel with AC-DC converter via OR-ing path.

IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET managing charge/discharge paths between battery and system bus, leveraging intrinsic body diode for reverse conduction.

Use Value: 0.85–1.5 V V_SD and 45–90 ns t_rr enable efficient reverse current flow during battery discharge, reducing need for external anti-parallel diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6644TRPbF	Higher rDS(on) (4.2 mΩ @ 10 V), same TO-263 package, but 150 °C TJ max	Limited to lower ambient temperature environments; not rated for sustained 175 °C operation	Select when cost sensitivity outweighs thermal margin needs and peak TJ remains below 150 °C
DMT6009LPS-13	Lower Qg (22 nC), same 20 V/60 A rating, but 150 °C TJ and different pinout (G-S-D vs G-S-D tab)	Requires layout revision due to non-identical terminal arrangement; unsuitable for drop-in replacement	Choose for faster switching in space-constrained designs where thermal derating is acceptable

Compared with IRF6644TRPbF and DMT6009LPS-13, SUM60N02-3M9P-E3 uniquely combines 175 °C operation, 5.2 mΩ logic-level on-resistance, and TO-263 drain-tab mechanical compatibility - making it the only option qualified for extended-life industrial OR-ing where thermal headroom and reliability are non-negotiable.

Availability

SUM60N02-3M9P-E3 is available at Aetrix Electronics and suitable for server OR-ing circuits, industrial hot-swap modules, and telecom DC power distribution requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SUM60N02-3M9P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.

The SUM60N02-3M9P-E3 belongs to Vishay's TrenchFET® Gen IV 20 V N-channel MOSFET family, engineered specifically for high-current, low-voltage OR-ing and hot-swap applications demanding ultra-low on-resistance and extreme thermal resilience.

FAQ

What is the maximum continuous drain current for SUM60N02-3M9P-E3 at 100 °C case temperature?

The SUM60N02-3M9P-E3 supports 60 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal management per Vishay's recommended pad layout (Doc. 73397). Derating applies above 100 °C case temperature per the SOA curve.

Does SUM60N02-3M9P-E3 require a gate resistor for safe switching in OR-ing applications?

Yes - SUM60N02-3M9P-E3 has a typical gate resistance of 1.5 Ω and total gate charge of 33–50 nC. A series gate resistor (typically 1–10 Ω) is recommended to control dV/dt, suppress ringing, and limit peak gate current from the driver. The exact value depends on switching speed requirements and EMI constraints in the target application.

Is SUM60N02-3M9P-E3 suitable for high-frequency PWM applications above 500 kHz?

No - SUM60N02-3M9P-E3 is optimized for DC/low-frequency switching (e.g., OR-ing, hot-swap enable/disable), not high-frequency PWM. Its 5950 pF input capacitance and 33–50 nC gate charge result in relatively slow switching transitions (td(on) = 15–25 ns, td(off) = 35–55 ns), making it less suitable for >500 kHz SMPS where low Qg and Ciss are critical.

What is the thermal resistance from junction to ambient (R_thJA) for SUM60N02-3M9P-E3 on a standard PCB?

The junction-to-ambient thermal resistance for SUM60N02-3M9P-E3 is 40 °C/W when mounted on a 1" square FR-4 PCB, as stated in the Thermal Resistance Ratings table. This value assumes no external heatsink; actual R_thJA improves significantly with increased copper area, internal layers, or thermal vias beneath the drain tab.

Can SUM60N02-3M9P-E3 be used in a high-side OR-ing configuration with 3.3 V gate drive?

Yes - SUM60N02-3M9P-E3 has a gate threshold voltage range of 1.0–3.0 V and delivers 5.2 mΩ rDS(on) at VGS = 4.5 V. With a 3.3 V gate drive, it achieves partial enhancement; however, full 60 A conduction requires ≥4.5 V. For guaranteed performance at 3.3 V, a gate driver with bootstrap or charge-pump capability is recommended to elevate VGS above 4.5 V.

SUM60N02-3M9P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5950 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM60N02-3M9P-E3 FAQ

1.How can I place an order for SUM60N02-3M9P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM60N02-3M9P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM60N02-3M9P-E3 reliable?

The price and inventory of SUM60N02-3M9P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM60N02-3M9P-E3 is usually 5 days.

3.What payment methods are accepted for SUM60N02-3M9P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM60N02-3M9P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM60N02-3M9P-E3?

SUM60N02-3M9P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM60N02-3M9P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM60N02-3M9P-E3?

For technical support, including SUM60N02-3M9P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM60N02-3M9P-E3 requirements.

6.How does Aetrix verify that SUM60N02-3M9P-E3 is sourced from the original manufacturer or authorized distributors?

All SUM60N02-3M9P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM60N02-3M9P-E3 meets industry standards.

7.What is the process for return or replacement of SUM60N02-3M9P-E3?

All SUM60N02-3M9P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM60N02-3M9P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM60N02-3M9P-E3 part is unused and in its original packaging.

Return procedure for SUM60N02-3M9P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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