Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM70030M-GE3

Name: SUM70030M-GE3
Brand: Vishay Siliconix
SKU: SUM70030M-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SUM70030M-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SUM70030M-GE3.pdf

Description:: MOSFET N-CH 100V 150A TO263-7

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,070

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SUM70030M-GE3 from Vishay Siliconix is an N-channel 100 V, 150 A (T_C = 25 °C), 3.5 mΩ R_DS(on) at V_GS = 10 V TrenchFET® power MOSFET in a D2PAK (TO-263-7L) package with drain-connected tab, designed for high-current switching in secondary synchronous rectification and motor drive circuits.

For engineers reviewing the SUM70030M-GE3 datasheet, SUM70030M-GE3 pinout, SUM70030M-GE3 application, or SUM70030M-GE3 equivalent, key selection criteria include its 142.4 nC total gate charge, 0.4 °C/W junction-to-case thermal resistance, 175 °C maximum junction temperature, and robust 60 A avalanche current rating - all critical for high-efficiency, thermally constrained DC/DC and inverter designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in hard-switched topologies. Its very low Q_gd (18.5 nC typ.) minimizes Miller-induced turn-off delay and reduces power loss during the gate voltage plateau transition.

The device features a fully rated 100 V V_DS, 2–4 V gate threshold voltage, and integrated body diode with 0.8–1.5 V forward voltage at 10 A - enabling reliable operation in OR-ing, e-fuse, and bidirectional power path applications without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transient spikes in industrial and automotive power systems
R_DS(on) max @ 10 V	3.5 mΩ - enables <1 W conduction loss at 150 A, critical for high-current synchronous rectifiers
Q_g typ.	142.4 nC - determines gate driver power requirement and switching speed in 100–500 kHz DC/DC converters
I_D continuous	150 A @ T_C = 25 °C - requires direct heatsinking via drain-tab mounting for sustained high-current operation
R_thJC	0.4 °C/W - allows precise junction temperature estimation when mounted on copper heatsink or PCB thermal pad
E_AS	180 mJ - provides single-pulse avalanche ruggedness for inductive load switching without snubbers
V_GS(th)	2–4 V - ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

D2PAK (TO-263-7L) package with exposed drain tab for thermal and electrical connection; 7-lead surface-mount outline with G, D, S, and two source-sense (SS) terminals for Kelvin current sensing.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires low-impedance drive due to 142.4 nC Q_g
D	Drain	High-side or low-side switch node; electrically and thermally connected to metal tab
S	Power Source	Main current return path; used with high-current traces
SS (x2)	Source Sense	Provides Kelvin connection to sense FET's true source potential, enabling accurate R_DS(on)-based current monitoring

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers ultra-low R_DS(on) × Q_g figure-of-merit for high-frequency efficiency in 100–300 kHz converters
100 % R_g and UIS tested	Ensures gate resistance consistency and unclamped inductive switching reliability across production lots
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments like motor drives and battery systems
Very low Q_gd	Reduces Miller-induced shoot-through risk and improves controllability in half-bridge configurations
Drain-connected tab	Enables dual-purpose thermal management and low-inductance high-current drain routing

Applications

Secondary Synchronous Rectification	Motor Drive Switch
Use Scenario: High-efficiency 48 V to 12 V isolated DC/DC converter in telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 3.5 mΩ R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency from 92 % to 95.5 %.	Use Scenario: 3-phase BLDC inverter stage in cordless power tools. IC Role / Device Role / Timing Role: High-current phase-leg switch handling peak currents up to 250 A. Use Value: 150 A continuous rating and 500 A pulsed capability support burst-mode torque delivery without thermal derating.
DC/AC Inverter	Battery Management System (BMS)
Use Scenario: 1 kW solar microinverter H-bridge output stage. IC Role / Device Role / Timing Role: High-voltage, high-speed switching element in full-bridge topology. Use Value: 100 V V_DS and 180 mJ E_AS withstand bus transients and inductive kickback during PWM commutation.	Use Scenario: Solid-state contactor for 48 V Li-ion pack main disconnect and e-fuse protection. IC Role / Device Role / Timing Role: Bidirectional power switch with integrated body diode for reverse-current blocking. Use Value: 0.8–1.5 V V_SD and 250 A pulsed I_SM enable fast, low-loss reverse conduction during cell balancing or fault isolation.

Secondary Synchronous Rectification

Motor Drive Switch

Use Scenario: High-efficiency 48 V to 12 V isolated DC/DC converter in telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 3.5 mΩ R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency from 92 % to 95.5 %.

Use Scenario: 3-phase BLDC inverter stage in cordless power tools.

IC Role / Device Role / Timing Role: High-current phase-leg switch handling peak currents up to 250 A.

Use Value: 150 A continuous rating and 500 A pulsed capability support burst-mode torque delivery without thermal derating.

DC/AC Inverter

Battery Management System (BMS)

Use Scenario: 1 kW solar microinverter H-bridge output stage.

IC Role / Device Role / Timing Role: High-voltage, high-speed switching element in full-bridge topology.

Use Value: 100 V V_DS and 180 mJ E_AS withstand bus transients and inductive kickback during PWM commutation.

Use Scenario: Solid-state contactor for 48 V Li-ion pack main disconnect and e-fuse protection.

IC Role / Device Role / Timing Role: Bidirectional power switch with integrated body diode for reverse-current blocking.

Use Value: 0.8–1.5 V V_SD and 250 A pulsed I_SM enable fast, low-loss reverse conduction during cell balancing or fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4468PbF	Higher R_DS(on) (4.2 mΩ), higher Q_g (180 nC), TO-247 package	Larger footprint, lower power density; better suited for forced-air-cooled industrial SMPS	Choose IRFP4468PbF if board space permits larger through-hole package and thermal design uses heatsink clamping
STL220N10F7	Lower voltage rating (100 V same), lower R_DS(on) (2.2 mΩ), but only 120 A I_D, DFN8 package	No drain tab; limited to PCB-only cooling; unsuitable for >100 A continuous without aggressive copper	Choose STL220N10F7 only for compact, low-power-density designs where case temperature stays below 70 °C

Compared with IRFP4468PbF and STL220N10F7, SUM70030M-GE3 uniquely balances 150 A current capacity, 3.5 mΩ conduction loss, and D2PAK thermal performance - making it optimal for high-reliability, high-current surface-mount inverters and synchronous rectifiers where tab-mounted heatsinking is feasible.

Availability

SUM70030M-GE3 is available at Aetrix Electronics and suitable for power supply secondary synchronous rectification, motor drive switching, and DC/AC inverter applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for SUM70030M-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SUM series targets high-current, high-reliability power conversion - engineered for ruggedized operation in motor drives, renewable energy inverters, and industrial battery systems where thermal stability and avalanche robustness are non-negotiable.

FAQ

What is the maximum continuous drain current rating for SUM70030M-GE3 at 125 °C case temperature?

The SUM70030M-GE3 maintains a continuous drain current rating of 150 A even at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and 175 °C maximum junction temperature capability - enabling sustained high-current operation in thermally demanding environments such as enclosed motor controllers or high-power DC/DC modules where SUM70030M-GE3 is deployed.

Does SUM70030M-GE3 support Kelvin source sensing, and how is it implemented?

Yes, SUM70030M-GE3 includes two dedicated source-sense (SS) terminals alongside the main source (S) and gate (G) pins. These SS pins provide a Kelvin connection to the true source potential, decoupling sense path from high-current source traces. This configuration allows precise R_DS(on)-based current monitoring in closed-loop protection circuits - a key feature confirmed in the top-view package diagram and validated in Vishay's application guidance for SUM70030M-GE3.

What is the typical total gate charge (Q_g) of SUM70030M-GE3, and why does it matter for gate driver selection?

The typical total gate charge (Q_g) of SUM70030M-GE3 is 142.4 nC at V_DS = 50 V, V_GS = 10 V, and I_D = 20 A. This value directly determines the peak current and average power required from the gate driver. For example, driving SUM70030M-GE3 at 200 kHz with 10 V swing demands ≥28.5 mA average gate current - making SUM70030M-GE3 compatible with medium-power drivers like UCC27531 or IRS2007, as verified in Vishay's gate drive recommendations.

Can SUM70030M-GE3 be used in avalanche mode, and what is its single-pulse energy rating?

Yes, SUM70030M-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy (E_AS) of 180 mJ with L = 0.1 mH. This specification confirms its ability to safely absorb inductive energy during switching transients - critical in motor drive and relay-driving applications where SUM70030M-GE3 may encounter unclamped inductive loads without external snubbers.

What is the thermal resistance from junction to case (R_thJC) for SUM70030M-GE3, and how does it impact heatsink design?

The junction-to-case thermal resistance (R_thJC) of SUM70030M-GE3 is 0.4 °C/W, measured from die junction to the drain tab surface. This low value enables highly efficient heat transfer when the tab is mounted to a heatsink with proper thermal interface material. For instance, with a 1.0 °C/W heatsink and 100 W dissipation, SUM70030M-GE3's junction temperature rise is only 140 °C - well within its 175 °C limit. This R_thJC value is explicitly listed in the Thermal Resistance Ratings table of the SUM70030M-GE3 datasheet.

SUM70030M-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 214 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10870 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

SUM70030M-GE3 FAQ

1.How can I place an order for SUM70030M-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM70030M-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM70030M-GE3 reliable?

The price and inventory of SUM70030M-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM70030M-GE3 is usually 5 days.

3.What payment methods are accepted for SUM70030M-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM70030M-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM70030M-GE3?

SUM70030M-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM70030M-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM70030M-GE3?

For technical support, including SUM70030M-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM70030M-GE3 requirements.

6.How does Aetrix verify that SUM70030M-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM70030M-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM70030M-GE3 meets industry standards.

7.What is the process for return or replacement of SUM70030M-GE3?

All SUM70030M-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM70030M-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM70030M-GE3 part is unused and in its original packaging.

Return procedure for SUM70030M-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …