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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM70040M-GE3

Name: SUM70040M-GE3
Brand: Vishay Siliconix
SKU: SUM70040M-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM70040M-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SUM70040M-GE3.pdf

Description:: MOSFET N-CH 100V 120A TO263-7

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Product details

Overview

SUM70040M-GE3 from Vishay Siliconix is an N-channel 100 V, 120 A (T_C = 25 °C), TO-263-7L power MOSFET with R_DS(on) = 3.8 mΩ at V_GS = 10 V, Q_g = 76 nC, and 175 °C maximum junction temperature - designed for high-current synchronous rectification in server PSUs and industrial DC/DC converters.

For engineers reviewing the SUM70040M-GE3 datasheet, SUM70040M-GE3 pinout, SUM70040M-GE3 application, or SUM70040M-GE3 equivalent, key selection criteria include its low R_DS(on) at 10 V drive, robust UIS rating (E_AS = 266 mJ), 7-lead D2PAK package with drain-connected tab, and suitability for high-duty-cycle motor drive switches and battery management OR-ing circuits.

Technical Context

This ThunderFET® MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Q_gd = 17 nC, Q_gs = 23 nC) supports efficient gate driver sizing, while the 0.4 °C/W R_thJC enables high-power dissipation when mounted to heatsinks via the exposed drain tab.

The device features 100 % R_g and UIS tested units, guaranteed avalanche energy of 266 mJ (L = 0.1 mH), and specified body diode recovery (t_rr = 94 ns, Q_rr = 0.23 μC), making it suitable for freewheeling and bidirectional current paths in half-bridge and synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 48 V nominal systems with 2× safety margin for transient spikes.
R_DS(on) max @ 10 V	3.8 mΩ - Enables <1.5 W conduction loss at 20 A continuous, critical for high-efficiency secondary-side rectification.
Q_g typ	76 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak drivers in 100–500 kHz converters.
I_D cont @ T_C = 25 °C	120 A - Rated for high-current PCB-mount operation with thermal derating above 70 °C case temperature.
E_AS	266 mJ - Confirmed single-pulse avalanche capability allows reliable operation under inductive switching stress without snubbers.
R_thJC	0.4 °C/W - Enables >300 W power dissipation with modest heatsink interface, supporting compact high-density power designs.
V_GS(th)	2.5–4.0 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.

Pinout & Package

Package: TO-263-7L (D2PAK-7), surface-mount with exposed drain tab thermally and electrically connected to pins 1, 2, 3, 4, and 6. Dimensions per Vishay Doc #63782: 10.67 × 9.65 × 4.83 mm (L × W × H), 7-lead gull-wing configuration.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6	Drain (D)	Electrically and thermally tied to metal tab; primary current path and heatsink interface.
5	Source (S)	Main source connection; carries full load current back to ground or low-side switch node.
7	Gate (G)	Control input; requires low-inductance routing and local 10 nF bypass to minimize ringing during switching.

Key Features

Feature	Design Value
ThunderFET® trench MOSFET	Optimized cell layout delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior-gen D2PAK devices.
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching robustness - reduces field failure risk in motor drives.
7-lead D2PAK with drain-tab connection	Five drain pins + tab maximize current handling and thermal spreading; eliminates need for external copper pour stitching.
175 °C T_J max rating	Enables operation in sealed enclosures or high-ambient environments (e.g., power tools, EV chargers) without derating penalties.
Low Q_rr body diode	0.23 μC reverse recovery charge minimizes switching loss and EMI in synchronous rectifier applications.

Applications

Server Power Supply Secondary Rectification	Industrial Motor Drive High-Side Switch
Use Scenario: Used as synchronous rectifier in 48 V output stage of 1 kW telecom/server PSU operating at 300 kHz. IC Role / Device Role / Timing Role: Low-side switching element replacing Schottky diode; driven by PWM controller with dead-time control. Use Value: Reduces conduction loss by 65 % vs. 40 V Schottky, enabling >96 % efficiency at full load and eliminating forced-air cooling.	Use Scenario: High-side switch in 24–48 V brushed DC motor driver for factory automation actuators. IC Role / Device Role / Timing Role: Main power switch controlling motor direction and speed via PWM; handles 100 A peak startup current. Use Value: Withstands repeated 73 A avalanche events during motor stall, eliminating need for external clamping diodes.
Battery Management System OR-ing	DC/AC Inverter Half-Bridge Leg
Use Scenario: Back-to-back configuration in 24 V Li-ion BMS for redundant power path selection and reverse-current blocking. IC Role / Device Role / Timing Role: Unidirectional power switch with body diode used for forward conduction; gate driven to enhance reverse blocking. Use Value: 1.5 V V_SD forward drop at 10 A ensures <15 W loss per FET, critical for thermal management in sealed battery packs.	Use Scenario: Upper switch in 5 kW solar microinverter half-bridge operating at 16 kHz with 600 V bus. IC Role / Device Role / Timing Role: Hard-switched high-side MOSFET; body diode conducts freewheeling current during low-side conduction phase. Use Value: 94 ns t_rr and 4.6 A I_RM(REC) limit voltage overshoot and reduce snubber losses compared to standard 100 V MOSFETs.

Server Power Supply Secondary Rectification

Industrial Motor Drive High-Side Switch

Use Scenario: Used as synchronous rectifier in 48 V output stage of 1 kW telecom/server PSU operating at 300 kHz.

IC Role / Device Role / Timing Role: Low-side switching element replacing Schottky diode; driven by PWM controller with dead-time control.

Use Value: Reduces conduction loss by 65 % vs. 40 V Schottky, enabling >96 % efficiency at full load and eliminating forced-air cooling.

Use Scenario: High-side switch in 24–48 V brushed DC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: Main power switch controlling motor direction and speed via PWM; handles 100 A peak startup current.

Use Value: Withstands repeated 73 A avalanche events during motor stall, eliminating need for external clamping diodes.

Battery Management System OR-ing

DC/AC Inverter Half-Bridge Leg

Use Scenario: Back-to-back configuration in 24 V Li-ion BMS for redundant power path selection and reverse-current blocking.

IC Role / Device Role / Timing Role: Unidirectional power switch with body diode used for forward conduction; gate driven to enhance reverse blocking.

Use Value: 1.5 V V_SD forward drop at 10 A ensures <15 W loss per FET, critical for thermal management in sealed battery packs.

Use Scenario: Upper switch in 5 kW solar microinverter half-bridge operating at 16 kHz with 600 V bus.

IC Role / Device Role / Timing Role: Hard-switched high-side MOSFET; body diode conducts freewheeling current during low-side conduction phase.

Use Value: 94 ns t_rr and 4.6 A I_RM(REC) limit voltage overshoot and reduce snubber losses compared to standard 100 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 125 nC; TO-220AB package; no integrated source sense pin.	Larger footprint, higher gate drive loss, lacks multi-drain-pin thermal path - less optimal for high-density SMT layouts.	Choose IRFB4115PBF only if through-hole mounting or legacy TO-220 compatibility is required.
IXFH120N10L2	R_DS(on) = 3.6 mΩ @ 10 V; Q_g = 105 nC; TO-247AC package; 150 °C T_J max.	Higher gate charge increases driver loss; lower max junction temperature limits ambient operating range.	Prefer IXFH120N10L2 only when higher surge current (I_DM = 600 A) is prioritized over thermal density and switching efficiency.

Compared with IRFB4115PBF and IXFH120N10L2, SUM70040M-GE3 offers superior thermal performance per unit area (0.4 °C/W R_thJC), lower Q_g-normalized switching loss, and a 25 °C higher junction rating - making it the preferred choice for space-constrained, high-reliability SMT power stages.

Availability

SUM70040M-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and battery management systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SUM70040M-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SUM70040M-GE3 belongs to Vishay's ThunderFET® family - engineered specifically for high-current, high-frequency power conversion where low R_DS(on), fast switching, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current rating for SUM70040M-GE3 at 70 °C case temperature?

The SUM70040M-GE3 is rated for 120 A continuous drain current at both T_C = 25 °C and T_C = 70 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and 0.4 °C/W R_thJC, allowing sustained high-current operation without derating up to 70 °C case temperature.

Does SUM70040M-GE3 have a Kelvin source connection for accurate current sensing?

No, SUM70040M-GE3 does not include a dedicated Kelvin source pin. It uses a standard 7-lead TO-263-7L configuration with one source terminal (pin 5) and five drain terminals (pins 1, 2, 3, 4, 6). For precision current sensing, external shunt resistors or isolated gate drivers with desaturation detection are recommended.

Can SUM70040M-GE3 be used in avalanche mode for inductive load switching?

Yes, SUM70040M-GE3 is 100 % UIS tested with a guaranteed single-pulse avalanche energy rating of 266 mJ (L = 0.1 mH). This makes it suitable for controlled avalanche operation in relay drivers, solenoid controls, and other inductive switching applications where snubberless design is desired.

What is the typical gate threshold voltage range for SUM70040M-GE3?

The SUM70040M-GE3 has a gate threshold voltage (V_GS(th)) range of 2.5 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity in noisy power environments.

Is SUM70040M-GE3 RoHS-compliant and halogen-free?

Yes, SUM70040M-GE3 is lead (Pb)-free and halogen-free, as explicitly stated in the Ordering Information section of the Vishay datasheet (Doc #65814). It complies with EU RoHS Directive 2011/65/EU and Vishay's material categorization standard per Doc #99912.

SUM70040M-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

SUM70040M-GE3 FAQ

1.How can I place an order for SUM70040M-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM70040M-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM70040M-GE3 reliable?

The price and inventory of SUM70040M-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM70040M-GE3 is usually 5 days.

3.What payment methods are accepted for SUM70040M-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM70040M-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM70040M-GE3?

SUM70040M-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM70040M-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM70040M-GE3?

For technical support, including SUM70040M-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM70040M-GE3 requirements.

6.How does Aetrix verify that SUM70040M-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM70040M-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM70040M-GE3 meets industry standards.

7.What is the process for return or replacement of SUM70040M-GE3?

All SUM70040M-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM70040M-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM70040M-GE3 part is unused and in its original packaging.

Return procedure for SUM70040M-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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