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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM70042M-GE3

Name: SUM70042M-GE3
Brand: Vishay Siliconix
SKU: SUM70042M-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM70042M-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SUM70042M-GE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET D2P

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Product details

Overview

SUM70042M-GE3 from Vishay Siliconix is an N-channel 100 V, 150 A (T_C = 25 °C), D2PAK-7L TrenchFET® Gen IV power MOSFET with R_DS(on) = 3.16 mΩ at V_GS = 10 V and 84 nC total gate charge, optimized for high-efficiency secondary-side synchronous rectification in server/telecom power supplies.

For engineers reviewing the SUM70042M-GE3 datasheet, SUM70042M-GE3 pinout, SUM70042M-GE3 application, or SUM70042M-GE3 equivalent, this device demands attention for its 175 °C rated junction temperature, 0.4 °C/W R_thJC, and low Q_gd (9 nC) enabling fast switching with reduced Miller-induced losses in hard-switched DC/DC converters.

Technical Context

This MOSFET employs a trench-based silicon structure with optimized cell pitch and gate oxide thickness to achieve ultra-low on-resistance while maintaining robust avalanche capability (E_AS = 180 mJ) and 100 % UIS testing. Its 7-lead D2PAK package integrates dual source terminals (SS) to reduce source inductance and improve current sharing in paralleled configurations.

The device features a gate threshold voltage range of 2.0–3.8 V, ensuring reliable turn-on with standard 5 V or 10 V gate drivers, and exhibits stable R_DS(on) over temperature - increasing only ~1.8× from 25 °C to 125 °C at V_GS = 10 V - supporting thermally demanding motor drive and battery management applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V input bus systems with 2× safety margin against transients in telecom/server PSUs.
R_DS(on) max @ V_GS = 10 V	3.83 mΩ - Enables <1.5 W conduction loss at 20 A continuous drain current in PCB-mounted thermal design.
Q_g typ.	84 nC - Requires ≥2 A peak gate driver capability for <50 ns effective turn-on time in 500 kHz+ converters.
I_D continuous @ T_C = 25 °C	150 A - Delivers high-current capability when mounted on large copper area (1"² FR4) with heatsink interface.
R_thJC	0.4 °C/W - Allows direct thermal coupling to heatsink for >300 W dissipation before reaching 175 °C junction limit.
V_GS(th)	2.0–3.8 V - Compatible with both 3.3 V logic-level and standard 5–10 V gate drivers without level-shifting.
E_AS	180 mJ - Withstands repetitive unclamped inductive switching events in motor control and e-fuse circuits.

Pinout & Package

Package: D2PAK-7L (TO-263-7L) with exposed drain tab for low-inductance, high-current thermal path. Dimensions per Vishay Doc. #63782: 15.88 mm × 10.41 mm × 4.83 mm (L × W × H), 7-pin surface-mount outline with dual source terminals and integrated heat sink tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V gate-source voltage; 1.5 Ω typical gate resistance limits ringing.
D	Drain	Main high-side current path; electrically connected to metal tab for thermal and electrical grounding.
S	Source (Main)	Primary return path for load current; low-inductance connection critical for synchronous rectifier efficiency.
SS	Source (Secondary)	Dedicated second source terminal reducing common-source inductance in high-dI/dt switching.
SS	Source (Secondary)	Redundant low-inductance source node - used in parallel layouts or Kelvin sensing configurations.

Key Features

Feature	Design Value
TrenchFET® Gen IV architecture	Delivers 22 % lower R_DS(on) vs. prior generation at same die size, enabling smaller footprint or higher current density.
100 % R_g and UIS tested	Ensures gate robustness against ESD and system-level unclamped inductive spikes without field failure risk.
Very low Q_gd (9 nC)	Minimizes Miller plateau duration, reducing switching loss and improving controllability in high-frequency ZVS/ZCS topologies.
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., industrial motor drives) without derating.
Dual source terminals (SS)	Enables Kelvin source sensing or split-current routing to suppress parasitic oscillation in paralleled MOSFET designs.

Applications

Server Power Supply Secondary Rectification	Industrial Motor Drive Half-Bridge
Use Scenario: High-current, high-efficiency synchronous rectification in 48 V input, 12 V output LLC resonant converters for AI server racks. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched at 300–600 kHz with precise dead-time control. Use Value: Reduces conduction loss by >65 % vs. 100 V Schottky, enabling >96 % full-load efficiency and 15 °C lower MOSFET case temperature.	Use Scenario: Upper/lower switch in 24–48 V BLDC motor inverter stages for CNC tools and robotic actuators. IC Role / Device Role / Timing Role: High-current half-bridge power switch; operated in 10–20 kHz PWM with active freewheeling via body diode or complementary FET. Use Value: Handles 150 A peak phase current with <0.5 V forward drop in body diode mode (V_SD = 0.74 V @ 10 A), minimizing torque ripple.
Battery Management System e-Fuse	DC/AC Inverter Bridge Switch
Use Scenario: Solid-state overcurrent protection in 48 V lithium-ion battery packs for energy storage systems. IC Role / Device Role / Timing Role: Fast-acting electronic fuse; triggered by current-sense amplifier and microcontroller within <10 μs of fault detection. Use Value: Sustains 60 A continuous current with <50 mW static loss, and clears 500 A short-circuit in <100 μs using avalanche-rated ruggedness.	Use Scenario: High-power bidirectional switching in 3 kW single-phase grid-tied solar inverters with transformerless topology. IC Role / Device Role / Timing Role: DC-link switch in H-bridge configuration; commutated at 16–20 kHz with soft-switching assist. Use Value: Achieves <1.2 W switching loss per transition (Q_g × V_GS) at 100 V bus, enabling >98.5 % inverter efficiency at 50 % load.

Server Power Supply Secondary Rectification

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-efficiency synchronous rectification in 48 V input, 12 V output LLC resonant converters for AI server racks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched at 300–600 kHz with precise dead-time control.

Use Value: Reduces conduction loss by >65 % vs. 100 V Schottky, enabling >96 % full-load efficiency and 15 °C lower MOSFET case temperature.

Use Scenario: Upper/lower switch in 24–48 V BLDC motor inverter stages for CNC tools and robotic actuators.

IC Role / Device Role / Timing Role: High-current half-bridge power switch; operated in 10–20 kHz PWM with active freewheeling via body diode or complementary FET.

Use Value: Handles 150 A peak phase current with <0.5 V forward drop in body diode mode (V_SD = 0.74 V @ 10 A), minimizing torque ripple.

Battery Management System e-Fuse

DC/AC Inverter Bridge Switch

Use Scenario: Solid-state overcurrent protection in 48 V lithium-ion battery packs for energy storage systems.

IC Role / Device Role / Timing Role: Fast-acting electronic fuse; triggered by current-sense amplifier and microcontroller within <10 μs of fault detection.

Use Value: Sustains 60 A continuous current with <50 mW static loss, and clears 500 A short-circuit in <100 μs using avalanche-rated ruggedness.

Use Scenario: High-power bidirectional switching in 3 kW single-phase grid-tied solar inverters with transformerless topology.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge configuration; commutated at 16–20 kHz with soft-switching assist.

Use Value: Achieves <1.2 W switching loss per transition (Q_g × V_GS) at 100 V bus, enabling >98.5 % inverter efficiency at 50 % load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH150N10L2	Higher R_DS(on) (4.2 mΩ), higher Q_g (110 nC), TO-247 package	Larger footprint, higher gate drive power, better thermal mass for intermittent loads	Preferred for lower-frequency (<100 kHz), high-pulse-current applications where layout space allows TO-247 mounting.
IRFP7430PBF	Lower I_D rating (120 A), higher R_DS(on) (4.5 mΩ), TO-247-3L	No dual source terminals; lacks SS pins for Kelvin sensing or low-inductance routing	Suitable for cost-sensitive, non-paralleled designs where 150 A capability and ultra-low Q_gd are not required.

Compared with IXTH150N10L2 and IRFP7430PBF, the SUM70042M-GE3 delivers superior high-frequency efficiency due to its 25 % lower Q_gd and dual-source layout flexibility, making it optimal for compact, high-density synchronous rectifiers and fast-switching motor drives - though its D2PAK-7L requires careful thermal pad design versus through-hole alternatives.

Availability

SUM70042M-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, battery management systems, and DC/AC inverters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SUM70042M-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUM70042M-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on), fast switching, and thermal reliability are critical.

FAQ

What is the maximum continuous drain current rating for SUM70042M-GE3 at 70 °C case temperature?

The SUM70042M-GE3 supports 150 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to its robust thermal design and 175 °C maximum junction temperature. This reflects minimal derating up to 70 °C - a key advantage for forced-air-cooled power modules where case temperature commonly reaches this range. The device maintains safe operation under these conditions when mounted on a 1"² FR4 PCB with 2 oz. copper and proper thermal interface to heatsink.

Does SUM70042M-GE3 have a built-in body diode, and what are its key characteristics?

Yes, the SUM70042M-GE3 includes an integral body diode rated for 500 A pulsed current (t = 100 μs) and 10 A continuous forward current. Its V_SD is 0.74 V (typ.) at I_F = 10 A and T_J = 25 °C, with reverse recovery time t_rr of 61 ns (typ.) and Q_rr of 0.15 μC (typ.). These parameters make it suitable for freewheeling and synchronous rectification roles where fast, low-loss diode conduction is required without external diode addition.

Can SUM70042M-GE3 be used in parallel configurations, and what design considerations apply?

Yes, the SUM70042M-GE3 is designed for paralleling, evidenced by its dual source terminals (SS) that minimize common-source inductance and improve current sharing accuracy. To ensure balanced dynamic current distribution, designers must match gate loop inductance, use individual gate resistors (≥5 Ω recommended), and maintain symmetrical PCB layout with identical thermal paths. Its tight V_GS(th) distribution (2.0–3.8 V) further supports stable static sharing across multiple devices.

What is the Safe Operating Area (SOA) limitation for SUM70042M-GE3 at DC operation?

At DC operation, the SUM70042M-GE3 SOA is limited by its R_DS(on) and thermal resistance - delivering up to ~125 W at T_C = 25 °C before hitting the 175 °C junction limit. Per the SOA curve in the datasheet, DC operation is bounded by the "ID limited" line, allowing 150 A only below ~0.83 V V_DS. For higher V_DS, current must be reduced linearly to stay within the 375 W P_D limit at T_C = 25 °C, with strict derating above 125 °C case temperature.

Is SUM70042M-GE3 lead-free and RoHS-compliant?

Yes, SUM70042M-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Material Declaration per Doc. #99912. The "-GE3" suffix explicitly denotes lead-free, green (halogen-free) packaging per Vishay's ordering nomenclature. It meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 and is qualified for reflow soldering up to 260 °C peak temperature.

SUM70042M-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.83mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 126 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6750 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

SUM70042M-GE3 FAQ

1.How can I place an order for SUM70042M-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM70042M-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM70042M-GE3 reliable?

The price and inventory of SUM70042M-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM70042M-GE3 is usually 5 days.

3.What payment methods are accepted for SUM70042M-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM70042M-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM70042M-GE3?

SUM70042M-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM70042M-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM70042M-GE3?

For technical support, including SUM70042M-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM70042M-GE3 requirements.

6.How does Aetrix verify that SUM70042M-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM70042M-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM70042M-GE3 meets industry standards.

7.What is the process for return or replacement of SUM70042M-GE3?

All SUM70042M-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM70042M-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM70042M-GE3 part is unused and in its original packaging.

Return procedure for SUM70042M-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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