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Vishay Siliconix SUM70N03-09CP-E3
- Part No.:
- SUM70N03-09CP-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM70N03-09CP-E3.pdf
- Description:
- MOSFET N-CH 30V 70A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:9,064
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Product details
Overview
SUM70N03-09CP-E3 from Vishay Siliconix is a lead-free N-channel TrenchFET® power MOSFET rated for 30 V VDS, 70 A continuous drain current at TC = 25 °C, and 0.0095 Ω rDS(on) at VGS = 20 V. It features TO-263 (D2PAK) packaging with drain-connected tab, optimized for high-side or low-side switching in DC/DC converters and synchronous rectifiers.
For engineers reviewing the SUM70N03-09CP-E3 datasheet, SUM70N03-09CP-E3 pinout, SUM70N03-09CP-E3 application, or SUM70N03-09CP-E3 equivalent, key selection criteria include its 175 °C junction rating, 1.6 °C/W junction-to-case thermal resistance, 45 nC total gate charge, and verified 100% Rg testing - all critical for high-efficiency, thermally constrained power stage designs.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching performance. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the 2200 pF input capacitance and 180 pF reverse transfer capacitance support stable operation in hard-switched topologies.
The device is characterized for operation up to 175 °C junction temperature and exhibits monotonic rDS(on) increase with temperature (0.015 Ω at 175 °C, VGS = 10 V, ID = 20 A). Its 61 mJ repetitive avalanche energy (L = 0.1 mH) and 35 A avalanche current rating provide robustness against transient overvoltage events in inductive load circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage; suitable for 24 V nominal bus systems with margin |
| rDS(on) | 0.0095 Ω @ VGS = 20 V - Enables <1 W conduction loss at 32 A, critical for high-current power stages |
| ID (continuous) | 70 A @ TC = 25 °C - Requires heatsinking or PCB copper area per TO-263 thermal guidelines |
| Qg | 45 nC - Determines gate driver strength requirement; impacts switching loss and EMI profile |
| RthJC | 1.6 °C/W - Enables efficient heat transfer from die to heatsink or copper plane when mounted properly |
| TJ max | 175 °C - Supports operation in automotive under-hood and industrial environments without derating |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard logic-level drivers; avoids partial enhancement |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, drain-connected metal tab. Dimensions per Vishay Doc. #71198 (Rev. 28-Oct-2024); tab must be electrically connected to system ground or drain node per layout requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Source (S) | Power return path; connects to low-side reference or output common; carries full load current |
| Pin 2 (Center) | Gate (G) | Control input; requires low-impedance drive due to 45 nC Qg; sensitive to noise coupling |
| Pin 3 (Right) | Drain (D) | Main power input/output node; internally bonded to exposed metal tab for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-competitive rDS(on) × Qg figure-of-merit for reduced conduction + switching losses |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch variation in turn-on/turn-off behavior |
| New low thermal resistance package | 1.6 °C/W RthJC enables higher power density vs. legacy D2PAK variants without forced air |
| Optimized for high- or low-side use | Robust body diode (trr = 35–70 ns, Qrr = 45 nC typical) supports synchronous rectification without external Schottky |
| Lead (Pb)-free construction | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
Applications
| DC/DC Buck Converter | Synchronous Rectifier |
|---|---|
Use Scenario: 12 V to 3.3 V/5 V point-of-load conversion in server VRMs or telecom power modules. IC Role / Device Role: Low-side switch handling peak currents up to 70 A with minimal conduction loss. Use Value: 0.0095 Ω rDS(on) reduces I²R loss by >30% vs. comparable 12 mΩ MOSFETs, improving efficiency at 50–100 A loads. | Use Scenario: Secondary-side rectification in isolated 48 V to 12 V LLC resonant converters. IC Role / Device Role: Synchronous rectifier replacing Schottky diodes to minimize forward voltage drop and thermal stress. Use Value: Body diode VSD = 1.2–1.5 V at 50 A enables lower conduction loss than 0.7 V Schottky at high current, with controlled trr to limit ringing. |
| Motor Drive Half-Bridge | Hot-Swap Controller |
Use Scenario: High-current BLDC motor phase leg in industrial automation drives (24–36 V bus). IC Role / Device Role: High-side or low-side switching element with avalanche ruggedness for inductive kickback suppression. Use Value: 61 mJ repetitive avalanche energy and 35 A IAR allow safe commutation without snubbers in 5–10 kW motor inverters. | Use Scenario: Inrush current limiting and fault isolation in redundant 24 V backplane power distribution. IC Role / Device Role: Hot-swap FET controlling power ramp-up and providing overcurrent shutdown via current sense. Use Value: Precise VGS(th) window (1.0–3.0 V) enables accurate current-limit threshold setting using simple op-amp feedback. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher rDS(on) (12 mΩ @ 10 V), same TO-263 package, no 100% Rg test | Lower efficiency at high current; less predictable gate timing in paralleled configurations | Acceptable where cost sensitivity outweighs efficiency or timing consistency requirements |
| STL110N3LLH6 | Lower VDS (30 V), similar rDS(on) (9.5 mΩ), but in PowerFLAT 5x6 package (no drain tab) | Limited thermal dissipation (RthJC ≈ 2.5 °C/W); unsuitable for >40 A continuous without aggressive PCB cooling | Preferred only for space-constrained, lower-power designs where TO-263 mounting is impractical |
Compared with IRF7470PBF and STL110N3LLH6, SUM70N03-09CP-E3 delivers superior thermal performance (1.6 °C/W), guaranteed gate resistance, and higher continuous current capability - making it the optimal choice for high-reliability, high-power-density 30 V switching applications requiring long-term stability.
Availability
SUM70N03-09CP-E3 is available at Aetrix Electronics and suitable for DC/DC converters, synchronous rectifiers, and motor drive half-bridges requiring stable component supply, RoHS-compliant sourcing, and traceable manufacturing history.
Supply support for SUM70N03-09CP-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.
The SUM70N03-09CP-E3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered for high-efficiency, high-current switching in industrial, computing, and telecom power supplies.
FAQ
What is the maximum continuous drain current rating for SUM70N03-09CP-E3 at 125 °C case temperature?
The SUM70N03-09CP-E3 supports 40 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be validated against actual board layout and heatsinking in the target application. The SUM70N03-09CP-E3 maintains safe operation within its SOA curve under these conditions when mounted per Vishay's recommended footprint.
Does SUM70N03-09CP-E3 require a gate resistor for ESD protection or drive stability?
While not mandatory for basic functionality, a series gate resistor (typically 2.5 Ω, as used in Vishay's characterization) is recommended for SUM70N03-09CP-E3 to control dV/dt, suppress ringing, and limit peak gate current during fast switching. The SUM70N03-09CP-E3's 45 nC Qg and 1.5 Ω typical Rg make external resistance essential for robust gate driver interface design.
Is SUM70N03-09CP-E3 suitable for synchronous rectification in a 48 V to 12 V LLC converter?
Yes - SUM70N03-09CP-E3 is explicitly listed for synchronous rectifier applications. Its 1.2–1.5 V source-drain diode forward voltage at 50 A and 35–70 ns reverse recovery time enable efficient replacement of Schottky diodes in 48 V to 12 V LLC secondaries. The SUM70N03-09CP-E3's low rDS(on) further reduces conduction loss during active synchronous mode.
What is the thermal resistance from junction to ambient (RthJA) for SUM70N03-09CP-E3 on a 1" square FR-4 PCB?
The SUM70N03-09CP-E3 has a typical RthJA of 40 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes standard soldering and no additional heatsink; actual performance depends on copper area, layer count, and airflow. For thermal design, the SUM70N03-09CP-E3's 1.6 °C/W RthJC should be used with heatsink interface resistance to calculate total path.
How does the 100% Rg test impact reliability and system-level timing of SUM70N03-09CP-E3?
The 100% Rg test ensures every SUM70N03-09CP-E3 unit meets the 0.5–2.1 Ω gate resistance specification, eliminating outliers that could cause inconsistent turn-on delay, shoot-through risk in half-bridges, or gate driver overstress. This screening directly improves timing predictability and long-term reliability in high-volume power systems using the SUM70N03-09CP-E3.
SUM70N03-09CP-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 93W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM70N03-09CP-E3 FAQ
1.How can I place an order for SUM70N03-09CP-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM70N03-09CP-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM70N03-09CP-E3 reliable?
The price and inventory of SUM70N03-09CP-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM70N03-09CP-E3 is usually 5 days.
3.What payment methods are accepted for SUM70N03-09CP-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM70N03-09CP-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM70N03-09CP-E3?
SUM70N03-09CP-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM70N03-09CP-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM70N03-09CP-E3?
For technical support, including SUM70N03-09CP-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM70N03-09CP-E3 requirements.
6.How does Aetrix verify that SUM70N03-09CP-E3 is sourced from the original manufacturer or authorized distributors?
All SUM70N03-09CP-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM70N03-09CP-E3 meets industry standards.
7.What is the process for return or replacement of SUM70N03-09CP-E3?
All SUM70N03-09CP-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM70N03-09CP-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM70N03-09CP-E3 part is unused and in its original packaging.
Return procedure for SUM70N03-09CP-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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