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Vishay Siliconix SUM85N15-19-E3
- Part No.:
- SUM85N15-19-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM85N15-19-E3.pdf
- Description:
- MOSFET N-CH 150V 85A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:972
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Product details
Overview
SUM85N15-19-E3 from Vishay Siliconix is an N-channel TrenchFET power MOSFET rated for 150 V drain-source breakdown, 85 A continuous drain current at TC = 25 °C, and 0.019 Ω rDS(on) at VGS = 10 V - deployed as a primary-side switch in automotive EPS/ABS systems and high-efficiency DC/DC converters.
For engineers reviewing the SUM85N15-19-E3 datasheet, SUM85N15-19-E3 pinout, SUM85N15-19-E3 application, or SUM85N15-19-E3 equivalent, key selection criteria include its 175 °C junction rating, 0.4 °C/W junction-to-case thermal resistance, 100% Rg-tested gate robustness, TO-263 package footprint, and avalanche energy capability of 125 mJ (repetitive).
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance with high voltage blocking. Its SOA curve supports single-pulse operation up to 150 V and 85 A, and it features a built-in source-drain diode with 1.0–1.5 V forward voltage at 85 A and 130–200 ns reverse recovery time.
The MOSFET operates with a gate-threshold voltage of 2–4 V and exhibits 4750 pF input capacitance, 530 pF output capacitance, and 220 pF reverse transfer capacitance at VGS = 0 V and VDS = 25 V - enabling fast switching in hard-switched topologies while maintaining EMI control via controlled Qgd (26 nC) and Qgs (21 nC).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 150 V - supports primary-side switching in 48 V–100 V bus DC/DC and motor drive inverters without derating. |
| rDS(on) | 0.019 Ω @ VGS = 10 V, ID = 30 A - delivers ≤1.5 W conduction loss at 85 A, enabling compact thermal design. |
| ID (continuous) | 85 A @ TC = 25 °C - package-limited current suitable for high-power automotive loads like EPS actuators. |
| RthJC | 0.4 °C/W - enables direct heatsink mounting for efficient power dissipation in space-constrained modules. |
| EAS (repetitive) | 125 mJ @ L = 0.1 mH - sustains unclamped inductive switching stress in motor drive freewheeling paths. |
| Qg / Qgd | 76–110 nC total gate charge, 26 nC gate-drain charge - balances switching speed and gate drive loss in 100–500 kHz converters. |
| TJ range | −55 to +175 °C - qualified for under-hood automotive environments per AEC-Q101 requirements. |
Pinout & Package
Package: TO-263 (D²PAK), surface-mount, isolated drain tab, 3-pin configuration with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output terminal | Connected to PCB copper pour for heat sinking; electrically tied to backside metal tab. |
| G (Gate) | Control input | High-impedance MOS gate requiring <3.0 Ω series resistance to suppress ringing during fast transitions. |
| S (Source) | Power return reference | Common node for current sensing and gate driver return; defines local ground for half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET architecture | Enables 150 V rating with sub-20 mΩ on-resistance in TO-263, reducing conduction loss vs. planar alternatives. |
| 100% Rg tested | Guarantees gate resistance between 0.5–3.0 Ω, ensuring consistent turn-on/turn-off timing across production lots. |
| New low thermal resistance package | 0.4 °C/W RthJC allows >300 W pulsed power handling before junction exceeds 175 °C under forced cooling. |
| Repetitive avalanche rated | 125 mJ EAS supports reliable operation in inductive load switching without external snubbers. |
| Lead-free (E3 suffix) | RoHS-compliant termination with matte tin plating, qualified for reflow profiles up to 260 °C peak. |
Applications
| Electric Power Steering (EPS) | Anti-lock Braking System (ABS) |
|---|---|
Use Scenario: High-current H-bridge driver controlling 12–48 V brushed or BLDC steering motors. IC Role / Device Role / Timing Role: Primary-side N-channel MOSFET in low-side or high-side switch position, handling bidirectional motor current up to 85 A. Use Value: 0.019 Ω rDS(on) minimizes I²R heating during sustained torque assist; 175 °C TJ rating ensures reliability in sealed EPS gear housings. | Use Scenario: Solenoid valve driver in hydraulic modulator units, switching 12–24 V loads with fast transient response. IC Role / Device Role / Timing Role: Low-side switch controlling ABS solenoid coils, operating in PWM mode at 1–10 kHz with tight dead-time control. Use Value: 26 nC Qgd enables precise edge control; 125 mJ EAS absorbs inductive kickback without clamping diodes. |
| Isolated DC/DC Converter | Industrial Motor Drive |
Use Scenario: Primary-side switch in 1 kW telecom or server PSU flyback or active-clamp forward converters. IC Role / Device Role / Timing Role: Main power switch in high-voltage primary circuit, operating at 100–300 kHz with zero-voltage switching assistance. Use Value: 4750 pF Ciss and 220 pF Crss support ZVS implementation; 0.4 °C/W RthJC simplifies heatsinking on multi-layer PCBs. | Use Scenario: Inverter leg switch in 3–5 kW HVAC or pump drives using 3-phase IGBT/MOSFET modules. IC Role / Device Role / Timing Role: Discrete high-current switch replacing module-based solutions in cost-sensitive industrial inverters. Use Value: 85 A ID and 150 V V(BR)DSS cover 400 V DC bus applications; TO-263 footprint enables direct replacement of legacy D²PAK devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP85NF15 | Same V(BR)DSS (150 V), higher rDS(on) = 0.022 Ω, lower ID = 80 A, TO-220 package | Lacks TO-263 thermal performance; unsuitable for high-density automotive modules | Choose when board-level heatsinking is available and leaded through-hole assembly is preferred. |
| IRFP4668PBF | Higher V(BR)DSS = 170 V, rDS(on) = 0.018 Ω, same TO-263, but no 100% Rg test or AEC-Q101 qualification | Not automotive-qualified; used in industrial UPS and solar inverters where extended voltage margin is critical | Choose when 170 V blocking is required and automotive temperature cycling validation is not mandated. |
Compared with STP85NF15 and IRFP4668PBF, the SUM85N15-19-E3 uniquely combines AEC-Q101 qualification, 100% Rg testing, and 0.4 °C/W RthJC in a lead-free TO-263 - making it the only option validated for under-hood EPS/ABS deployment with minimal thermal margin.
Availability
SUM85N15-19-E3 is available at Aetrix Electronics and suitable for automotive EPS systems, ABS hydraulic controllers, and isolated DC/DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for SUM85N15-19-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SUM85N15-19-E3 belongs to Vishay's TrenchFET Gen III power MOSFET family, engineered specifically for high-current, high-temperature automotive power switching applications demanding robust avalanche capability and thermal efficiency.
FAQ
What is the maximum continuous drain current rating for SUM85N15-19-E3 at 125 °C case temperature?
The SUM85N15-19-E3 supports 50 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-263 package under elevated ambient conditions and must be verified against actual PCB layout and heatsinking in the final design. The SUM85N15-19-E3 datasheet confirms this limit applies to steady-state operation with proper thermal management.
Does SUM85N15-19-E3 have AEC-Q101 qualification for automotive use?
Yes, the SUM85N15-19-E3 is AEC-Q101 qualified for automotive applications, including Electric Power Steering and Anti-lock Braking Systems. Its −55 to +175 °C operating junction temperature range, 100% Rg testing, and repetitive avalanche rating align with AEC-Q101 stress test requirements. The SUM85N15-19-E3 product summary explicitly cites automotive use in its Applications section.
What is the gate threshold voltage range for SUM85N15-19-E3?
The gate-threshold voltage (VGS(th)) for SUM85N15-19-E3 is specified as 2–4 V at VDS = VGS and ID = 250 µA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity in noisy automotive environments. The SUM85N15-19-E3 datasheet lists this parameter in the Static Characteristics table under Specifications.
Can SUM85N15-19-E3 replace older Vishay SUM85N15-19 in existing designs?
Yes, SUM85N15-19-E3 is a direct lead-free replacement for SUM85N15-19, sharing identical electrical specifications, TO-263 package dimensions, and pinout. The "E3" suffix denotes matte tin lead-free termination compatible with Pb-free reflow profiles. No layout or schematic changes are needed when migrating from SUM85N15-19 to SUM85N15-19-E3.
What is the typical reverse recovery charge (Qrr) of the intrinsic body diode in SUM85N15-19-E3?
The SUM85N15-19-E3 body diode has a reverse recovery charge (Qrr) of 0.52–1.2 µC, measured at IF = 50 A, di/dt = 100 A/µs, and TJ = 25 °C. This value impacts commutation losses in synchronous rectification and freewheeling applications. The SUM85N15-19-E3 datasheet specifies Qrr in the Source-Drain Diode Characteristics table.
SUM85N15-19-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM85N15-19-E3 FAQ
1.How can I place an order for SUM85N15-19-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM85N15-19-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM85N15-19-E3 reliable?
The price and inventory of SUM85N15-19-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM85N15-19-E3 is usually 5 days.
3.What payment methods are accepted for SUM85N15-19-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM85N15-19-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM85N15-19-E3?
SUM85N15-19-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM85N15-19-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM85N15-19-E3?
For technical support, including SUM85N15-19-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM85N15-19-E3 requirements.
6.How does Aetrix verify that SUM85N15-19-E3 is sourced from the original manufacturer or authorized distributors?
All SUM85N15-19-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM85N15-19-E3 meets industry standards.
7.What is the process for return or replacement of SUM85N15-19-E3?
All SUM85N15-19-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM85N15-19-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM85N15-19-E3 part is unused and in its original packaging.
Return procedure for SUM85N15-19-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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