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Vishay Siliconix SUM90140E-GE3

Part No.:
SUM90140E-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSUM90140E-GE3.pdf
Description:
MOSFET N-CH 200V 90A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,708

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Product details

Overview

SUM90140E-GE3 from Vishay Siliconix is an N-channel 200 V, 90 A, TO-263 packaged power MOSFET optimized for high-efficiency switch-mode power supplies and synchronous rectification. It delivers RDS(on) = 13.8 mΩ at VGS = 10 V, supports 175 °C junction operation, and features 100 % Rg and UIS testing for ruggedness in demanding industrial and renewable energy systems.

For engineers reviewing the SUM90140E-GE3 datasheet, SUM90140E-GE3 pinout, SUM90140E-GE3 application, or SUM90140E-GE3 equivalent, this device is selected for high-current DC/DC conversion, solar micro-inverter switching stages, and Class D audio amplifier output stages where low conduction loss and fast switching dynamics are critical.

Technical Context

The SUM90140E-GE3 employs a ThunderFET® trench-gate process enabling low RDS(on) while maintaining robust avalanche capability (EAS = 180 mJ) and tight gate charge control (Qg = 64 nC typ.). Its SOA is defined up to 10 ms at TC = 25 °C with VDS derating per curve.

Thermal design leverages a low RthJC of 0.4 °C/W and is validated for mounting on 1" × 1" FR4 PCBs. The body diode exhibits VSD = 0.8–1.2 V at IF = 10 A and trr = 160–320 ns, supporting efficient synchronous rectification without external Schottky replacement.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - Withstands full bridge or boost stage DC bus voltages up to 200 V without breakdown.
RDS(on) max 17.0 mΩ at VGS = 10 V - Enables ≤1.5 W conduction loss at 90 A continuous drain current.
ID continuous 90 A at TJ = 150 °C - Supports high-power density designs with minimal parallel devices.
Qg typ 64 nC - Reduces gate drive power and enables <100 ns turn-on delay with 1 Ω driver.
EAS 180 mJ - Sustains single-pulse inductive energy events common in motor drive and DC/AC inverter freewheeling.
TJ max 175 °C - Allows operation in sealed enclosures or high-ambient environments without thermal derating.
RthJC 0.4 °C/W - Enables direct heatsink mounting for >300 W dissipation with standard thermal interface materials.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated drain tab, 3-lead configuration with G–D–S terminal layout. Tab is electrically connected to drain (D) and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
G Gate Controls channel conduction; requires 2–4 V threshold and ≤20 V absolute max rating; low Rg (1.5–5 Ω) minimizes ringing.
D Drain Main high-side current path; tied to exposed metal tab for thermal and electrical connection to heatsink or PCB copper pour.
S Source Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature Design Value
ThunderFET® trench architecture Delivers 13.8 mΩ RDS(on) at 10 V drive while maintaining <250 nA gate leakage and stable VGS(th) across temperature.
100 % Rg and UIS tested Ensures gate resistance consistency for predictable switching timing and verified unclamped inductive switching robustness in real-world layouts.
175 °C maximum junction temperature Supports operation in automotive under-hood, industrial motor drives, and solar inverters without forced air cooling.
Low Qgd/Qgs ratio (1.01) Minimizes Miller-induced shoot-through risk in half-bridge configurations and improves hard-switching EMI performance.
Body diode trr = 160–320 ns Enables reliable synchronous rectification in LLC and phase-shifted full-bridge topologies without external diode substitution.

Applications

Solar Micro Inverter Class D Audio Amplifier

Use Scenario: High-frequency DC/AC inversion stage converting PV panel output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Primary switching device in H-bridge output stage operating at 100–300 kHz with zero-voltage switching.

Use Value: Low RDS(on) reduces conduction losses at 60–90 A peak currents; 175 °C rating accommodates sealed enclosure thermal limits.

Use Scenario: Output stage delivering >500 W into 4 Ω loads with THD < 0.1 %.

IC Role / Device Role / Timing Role: High-current, low-distortion switching element in complementary push-pull topology.

Use Value: Fast turn-off (tf = 80–150 ns) and low Qgd suppress crossover distortion; rugged body diode handles reactive speaker loads.

Uninterruptible Power Supply (UPS) Industrial Motor Drive

Use Scenario: Bidirectional DC link switching in online double-conversion UPS with battery backup.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET hybrid inverter leg handling 200 V DC bus and 90 A surge currents.

Use Value: 240 A pulsed drain rating and 180 mJ avalanche energy prevent failure during short-circuit or overload transients.

Use Scenario: Inverter output stage driving 3-phase induction motors up to 15 kW.

IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack module configuration operating at 8–16 kHz PWM frequency.

Use Value: Low RthJC (0.4 °C/W) allows direct heatsink mounting; 175 °C TJ rating sustains operation during stall or overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STW90NF20 RDS(on) = 20 mΩ @ 10 V; Qg = 95 nC; TO-247 package; no 100 % UIS test specified. Higher conduction loss and slower switching; better suited for lower-frequency (<50 kHz), higher-voltage margin applications. Prefer SUM90140E-GE3 when board space, thermal constraints, or high-frequency efficiency dominate.
IXFH90N20X3 RDS(on) = 15.5 mΩ @ 10 V; Qg = 72 nC; TO-247 package; 175 °C rated but no published EAS. Similar RDS(on) but larger footprint and higher gate drive demand; lacks documented avalanche ruggedness data. Choose SUM90140E-GE3 for surface-mount assembly, thermal-limited designs, or applications requiring verified UIS performance.

Compared with STW90NF20 and IXFH90N20X3, the SUM90140E-GE3 offers superior power density via TO-263 packaging, lower gate charge for faster switching, and factory-tested avalanche capability-making it optimal for compact, high-reliability 200 V switching stages.

Availability

SUM90140E-GE3 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar micro inverters, and Class D audio amplifiers requiring stable component supply, Pb-free/halogen-free compliance, and long-term industrial lifecycle support.

Supply support for SUM90140E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal efficiency.

The SUM90140E-GE3 belongs to Vishay's ThunderFET® family, engineered specifically for high-current, high-voltage switching in power conversion systems where low RDS(on), fast switching, and 175 °C operation are mandatory.

FAQ

What is the maximum continuous drain current rating for SUM90140E-GE3 at 125 °C case temperature?

The SUM90140E-GE3 supports 75 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and heatsinking to sustain this current in actual layouts.

Does SUM90140E-GE3 have a fully characterized body diode for synchronous rectification?

Yes, the SUM90140E-GE3 body diode is fully characterized: VSD = 0.8–1.2 V at IF = 10 A and TJ = 25 °C, with reverse recovery time trr = 160–320 ns and Qrr = 0.9–1.8 μC. These parameters are measured and guaranteed per datasheet, enabling reliable use in synchronous rectifier topologies without external diode supplementation.

Is SUM90140E-GE3 pin-compatible with other TO-263 N-channel MOSFETs?

The SUM90140E-GE3 uses the standard 3-lead TO-263 (D2PAK) footprint with G–D–S pinout, matching industry-standard pad layouts. However, pin compatibility does not guarantee functional equivalence-RDS(on), Qg, and SOA differ significantly across vendors. Layout reuse is possible, but electrical validation is required for any replacement.

What is the gate threshold voltage range for SUM90140E-GE3, and how does it affect drive circuit design?

The SUM90140E-GE3 has a VGS(th) range of 2–4 V at ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction from noise. Designers should provide ≥6 V gate drive for full enhancement and minimize gate loop inductance to prevent oscillation during switching transitions.

How is avalanche ruggedness validated for SUM90140E-GE3, and what does EAS = 180 mJ mean in practice?

SUM90140E-GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC standards. EAS = 180 mJ means the device can absorb up to 180 millijoules of inductive energy in a single pulse without failure-equivalent to interrupting ~60 A through 0.1 mH inductance at 200 V. This rating supports robustness in motor drive freewheeling and UPS overload scenarios.

SUM90140E-GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
ThunderFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Rds On (Max) @ Id, Vgs:
17mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
96 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4132 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

SUM90140E-GE3 FAQ

1.How can I place an order for SUM90140E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM90140E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM90140E-GE3 reliable?

The price and inventory of SUM90140E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM90140E-GE3 is usually 5 days.

3.What payment methods are accepted for SUM90140E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM90140E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM90140E-GE3?

SUM90140E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM90140E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM90140E-GE3?

For technical support, including SUM90140E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM90140E-GE3 requirements.

6.How does Aetrix verify that SUM90140E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM90140E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM90140E-GE3 meets industry standards.

7.What is the process for return or replacement of SUM90140E-GE3?

All SUM90140E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM90140E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM90140E-GE3 part is unused and in its original packaging.

Return procedure for SUM90140E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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