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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM90220E-GE3

Name: SUM90220E-GE3
Brand: Vishay Siliconix
SKU: SUM90220E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM90220E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM90220E-GE3.pdf

Description:: MOSFET N-CH 200V 64A D2PAK

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Product details

Overview

SUM90220E-GE3 from Vishay Siliconix is an N-channel 200 V, 64 A power MOSFET in TO-263 (D2PAK) package, optimized for high-efficiency synchronous rectification and DC/DC conversion with R_DS(on) = 0.0216 Ω at V_GS = 10 V, Q_g = 31.6 nC, and 175 °C maximum junction temperature.

For engineers reviewing the SUM90220E-GE3 datasheet, SUM90220E-GE3 pinout, SUM90220E-GE3 application, or SUM90220E-GE3 equivalent, this device is selected for high-current, high-temperature switching in solar microinverters, motor drives, and industrial power supplies where low conduction loss and robust avalanche capability are critical.

Technical Context

The SUM90220E-GE3 employs a ThunderFET® silicon process enabling low R_DS(on)–Q_g figure-of-merit (0.0216 Ω × 31.6 nC ≈ 0.68 nC·Ω), supporting fast switching with reduced gate drive loss. Its 100 % R_g and UIS testing ensures production reliability under repetitive stress conditions.

Thermal design is enabled by R_thJC = 0.65 °C/W (junction-to-case) and R_thJA = 40 °C/W (PCB mount), with safe operating area (SOA) validated up to 100 μs pulses at 100 A and 200 V. The body diode exhibits t_rr = 120–180 ns and Q_rr = 0.91–1.37 μC, suitable for hard-switched and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands full DC bus voltage in 100–200 V solar and industrial DC/AC inverters without derating.
R_DS(on) max @ V_GS = 10 V	0.0216 Ω - Delivers ≤ 88 W conduction loss at 64 A, enabling high-efficiency operation in high-current power stages.
Q_g typ.	31.6 nC - Enables efficient gate driving with standard 1–2 A peak drivers; supports 100–500 kHz switching in DC/DC converters.
I_D continuous @ T_C = 25 °C	64 A - Supports high-output-current designs without parallel devices in TO-263 footprint.
T_J max.	+175 °C - Allows operation in sealed enclosures or high-ambient environments (e.g., motor drive cabinets, outdoor solar gear).
E_AS single-pulse	101 mJ - Provides robustness against inductive switching transients and load dump events in motor and inverter applications.
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers when used with appropriate margin.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated heat sink tab (drain-connected), 3-lead configuration with G–D–S terminal layout.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives PWM signal; requires <10 Ω series resistance to damp ringing due to low R_g (0.6–6 Ω) and high C_iss (1950 pF).
D (Drain)	High-side switch node / heat sink connection	Internally connected to metal tab; must be soldered to large copper pour for thermal management and EMI control.
S (Source)	Power return / reference node	Serves as local ground reference for gate driver; trace routing must minimize inductance to avoid shoot-through risk during fast switching.

Key Features

Feature	Design Value
ThunderFET® technology	Optimized trench-gate structure delivering industry-leading R_DS(on)–Q_g FOM for 200 V class, reducing total switching + conduction loss.
100 % R_g tested	Guarantees gate resistance between 0.6–6 Ω, enabling predictable gate drive timing and minimizing risk of oscillation in high-dV/dt environments.
100 % UIS tested	Validated unclamped inductive switching robustness to 45 A single-pulse avalanche current and 101 mJ energy, critical for motor and inverter reliability.
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912, supporting environmentally compliant industrial and renewable energy systems.
Body diode t_rr & Q_rr	120–180 ns reverse recovery time and 0.91–1.37 μC recovered charge enable use in synchronous rectification without external Schottky replacement in many 100–300 kHz designs.

Applications

Solar Microinverter DC/AC Stage	Industrial Motor Drive Half-Bridge
Use Scenario: High-frequency (100–250 kHz) DC/AC inversion in compact rooftop solar units with limited thermal mass and no forced cooling. IC Role / Device Role / Timing Role: High-side and low-side switching element in full-bridge or H-bridge topology; handles bidirectional current during PWM commutation. Use Value: 175 °C rating and low R_DS(on) allow sustained 64 A operation at ambient >70 °C without derating; SOA supports inductive kickback from PV array wiring inductance.	Use Scenario: 3-phase BLDC or PMSM motor control in factory automation drives where space-constrained PCBs require high-current density solutions. IC Role / Device Role / Timing Role: Power switch in inverter leg; conducts phase current up to 64 A RMS with fast turn-off (t_f = 38–57 ns) to minimize switching losses. Use Value: Low Q_g reduces gate driver power demand; 100 % UIS test ensures survival during motor stall or short-circuit fault events without external protection.
Server PSU Synchronous Rectifier	EV Onboard Charger DC/DC Stage
Use Scenario: Secondary-side synchronous rectification in 48 V output server PSUs operating at 300–500 kHz with tight efficiency targets (>96 %). IC Role / Device Role / Timing Role: Low-side rectifier switch replacing Schottky diodes; body diode conducts freewheeling current before gate turn-on. Use Value: Body diode Q_rr = 0.91–1.37 μC and V_SD = 0.85–1.5 V enable efficient soft-recovery behavior; low R_DS(on) cuts conduction loss vs. discrete diodes by >40 % at 40 A.	Use Scenario: Isolated DC/DC stage in 3.3 kW onboard chargers converting 400 V battery to 12 V auxiliary supply under automotive thermal constraints. IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC or phase-shifted full-bridge converter; operates at 100–200 kHz with high duty-cycle variation. Use Value: R_thJC = 0.65 °C/W enables direct heatsink mounting for thermal stability across -40 to +125 °C ambient; 200 V rating covers transient overvoltage margins per ISO 7637-2.

Solar Microinverter DC/AC Stage

Industrial Motor Drive Half-Bridge

Use Scenario: High-frequency (100–250 kHz) DC/AC inversion in compact rooftop solar units with limited thermal mass and no forced cooling.

IC Role / Device Role / Timing Role: High-side and low-side switching element in full-bridge or H-bridge topology; handles bidirectional current during PWM commutation.

Use Value: 175 °C rating and low R_DS(on) allow sustained 64 A operation at ambient >70 °C without derating; SOA supports inductive kickback from PV array wiring inductance.

Use Scenario: 3-phase BLDC or PMSM motor control in factory automation drives where space-constrained PCBs require high-current density solutions.

IC Role / Device Role / Timing Role: Power switch in inverter leg; conducts phase current up to 64 A RMS with fast turn-off (t_f = 38–57 ns) to minimize switching losses.

Use Value: Low Q_g reduces gate driver power demand; 100 % UIS test ensures survival during motor stall or short-circuit fault events without external protection.

Server PSU Synchronous Rectifier

EV Onboard Charger DC/DC Stage

Use Scenario: Secondary-side synchronous rectification in 48 V output server PSUs operating at 300–500 kHz with tight efficiency targets (>96 %).

IC Role / Device Role / Timing Role: Low-side rectifier switch replacing Schottky diodes; body diode conducts freewheeling current before gate turn-on.

Use Value: Body diode Q_rr = 0.91–1.37 μC and V_SD = 0.85–1.5 V enable efficient soft-recovery behavior; low R_DS(on) cuts conduction loss vs. discrete diodes by >40 % at 40 A.

Use Scenario: Isolated DC/DC stage in 3.3 kW onboard chargers converting 400 V battery to 12 V auxiliary supply under automotive thermal constraints.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC or phase-shifted full-bridge converter; operates at 100–200 kHz with high duty-cycle variation.

Use Value: R_thJC = 0.65 °C/W enables direct heatsink mounting for thermal stability across -40 to +125 °C ambient; 200 V rating covers transient overvoltage margins per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK20Z	Higher R_DS(on) = 0.22 Ω @ 10 V, lower I_D = 20 A, TO-247 package; lacks UIS and R_g testing.	Lower current handling limits use to <20 A loads; larger TO-247 footprint increases board area and thermal loop inductance.	Select only if cost sensitivity outweighs efficiency and reliability requirements in non-critical 20 A applications.
IXFH28N20X3	R_DS(on) = 0.024 Ω @ 10 V, Q_g = 38 nC, same 200 V/64 A rating; D2PAK-7L variant available but standard version is TO-247.	Higher Q_g increases gate drive loss; TO-247 requires different thermal pad layout and mounting hardware than TO-263.	Prefer SUM90220E-GE3 for TO-263 compatibility, lower Q_g, and integrated thermal performance on FR4 PCBs.

Compared with STW20NK20Z and IXFH28N20X3, the SUM90220E-GE3 delivers superior R_DS(on)–Q_g balance in a thermally optimized TO-263 package, with production-tested UIS and R_g ensuring reliability in demanding inverter and motor drive deployments without layout redesign.

Availability

SUM90220E-GE3 is available at Aetrix Electronics and suitable for solar microinverters, industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SUM90220E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally robust designs.

The SUM90220E-GE3 belongs to Vishay's ThunderFET® power MOSFET family, engineered specifically for high-current, high-temperature switching in renewable energy, industrial automation, and electric vehicle power conversion systems.

FAQ

What is the maximum continuous drain current for SUM90220E-GE3 at 125 °C case temperature?

The SUM90220E-GE3 supports 37 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be applied when ambient or heatsink conditions prevent maintaining T_C ≤ 25 °C. Designers should verify actual case temperature using R_thJC = 0.65 °C/W and measured power dissipation.

Does SUM90220E-GE3 have a fully rated avalanche capability?

Yes, the SUM90220E-GE3 is 100 % tested for unclamped inductive switching (UIS) with single-pulse avalanche current I_AS = 45 A and energy E_AS = 101 mJ. This rating is validated per JEDEC JESD24-11 and ensures robustness against inductive transients in motor drive and inverter applications without requiring external snubbers.

Can SUM90220E-GE3 be used with 5 V gate drive?

The SUM90220E-GE3 has a gate threshold voltage V_GS(th) of 2–4 V, making it compatible with 5 V logic-level gate drivers. However, R_DS(on) is only guaranteed at V_GS = 10 V (0.0216 Ω); at 5 V, conduction loss rises significantly. For optimal efficiency, use ≥10 V drive or confirm R_DS(on) meets system loss budget at actual V_GS.

What is the thermal resistance from junction to ambient for SUM90220E-GE3 on a standard PCB?

The SUM90220E-GE3 has R_thJA = 40 °C/W when mounted on a 1" square FR4 PCB, per datasheet note c. This value assumes minimal copper area; actual performance improves with larger thermal pads and internal copper planes. For heatsink-mounted designs, use R_thJC = 0.65 °C/W to calculate junction temperature from case temperature.

Is SUM90220E-GE3 suitable for synchronous rectification in a 300 kHz DC/DC converter?

Yes, the SUM90220E-GE3 is well-suited for synchronous rectification at 300 kHz due to its low Q_g = 31.6 nC, fast switching times (t_f = 38–57 ns), and body diode characteristics (t_rr = 120–180 ns, Q_rr = 0.91–1.37 μC). Its R_DS(on) advantage over Schottky diodes yields measurable efficiency gains above 15 A load current in such topologies.

SUM90220E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 21.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM90220E-GE3 FAQ

1.How can I place an order for SUM90220E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM90220E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM90220E-GE3 reliable?

The price and inventory of SUM90220E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM90220E-GE3 is usually 5 days.

3.What payment methods are accepted for SUM90220E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM90220E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM90220E-GE3?

SUM90220E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM90220E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM90220E-GE3?

For technical support, including SUM90220E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM90220E-GE3 requirements.

6.How does Aetrix verify that SUM90220E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM90220E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM90220E-GE3 meets industry standards.

7.What is the process for return or replacement of SUM90220E-GE3?

All SUM90220E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM90220E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM90220E-GE3 part is unused and in its original packaging.

Return procedure for SUM90220E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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