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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM90330E-GE3

Name: SUM90330E-GE3
Brand: Vishay Siliconix
SKU: SUM90330E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM90330E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM90330E-GE3.pdf

Description:: MOSFET N-CH 200V 35.1A TO263

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Product details

Overview

SUM90330E-GE3 from Vishay Siliconix is an N-channel 200 V, 35.1 A, TO-263 packaged power MOSFET optimized for high-efficiency synchronous rectification and DC/DC conversion, featuring 0.0375 Ω R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the SUM90330E-GE3 datasheet, SUM90330E-GE3 pinout, SUM90330E-GE3 application, or SUM90330E-GE3 equivalent, this device supports high-current switching in solar microinverters, motor drive half-bridges, and industrial power supplies where thermal robustness and low conduction loss are critical.

Technical Context

The SUM90330E-GE3 employs a ThunderFET® trench-gate process to achieve low R_DS(on)–Q_g figure-of-merit (0.0375 Ω × 21 nC = 0.7875 Ω·nC), enabling high-frequency operation with reduced switching losses. Its 1.2 °C/W junction-to-case thermal resistance supports direct heatsink mounting for sustained 35.1 A continuous drain current at T_C = 25 °C.

This MOSFET integrates a fast-recovery body diode (t_rr = 111–170 ns, Q_rr = 0.51–1 μC) and is 100 % R_g and UIS tested - critical for reliable operation in hard-switched and avalanche-prone topologies like LLC resonant converters and DC/AC inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands full bus voltage in 170 V DC-link solar inverters and industrial 3-phase rectified supplies.
R_DS(on) max @ V_GS = 10 V	0.0375 Ω - Enables ≤1.3 W conduction loss at 12.2 A, supporting high-efficiency synchronous rectification.
Q_g typ.	21 nC - Low gate drive energy reduces controller loading and allows use with standard 1-A gate drivers.
I_D continuous @ T_C = 25 °C	35.1 A - Supports high-power density designs without forced air cooling when mounted on ≥1"² FR4 PCB.
T_J max	+175 °C - Enables operation in under-hood automotive auxiliary supplies and sealed industrial enclosures.
R_thJC	1.2 °C/W - Allows precise thermal modeling for heatsink sizing; enables >41 W dissipation at T_C = 125 °C.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5-V or 3.3-V logic-level gate drivers without level-shifting.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated heat sink tab (drain-connected), 3-lead configuration with G–D–S terminal layout.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives PWM signal; requires <7.6 Ω series gate resistance to damp ringing per R_g spec (0.76–7.6 Ω).
D (Drain)	High-side switch node / heat sink connection	Electrically tied to exposed metal tab; must be thermally coupled to heatsink and electrically isolated from other potentials.
S (Source)	Power return / reference node	Serves as local ground reference for gate driver; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
ThunderFET® trench MOSFET architecture	Delivers industry-leading R_DS(on)–Q_g FOM of 0.7875 Ω·nC, reducing combined conduction + switching losses in 100–500 kHz converters.
100 % R_g and UIS tested	Guarantees gate robustness against ESD and ruggedness against single-pulse avalanche stress up to 54.45 mJ (IAS = 33 A).
Low Q_gd/Q_g ratio (≈25 %)	Minimizes Miller plateau duration, improving controllability during hard switching and reducing risk of shoot-through in bridge configurations.
Body diode t_rr = 111–170 ns	Enables efficient synchronous rectification in forward and flyback topologies without external Schottky parallel diodes.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc# 99912).

Applications

Solar Microinverter DC/AC Stage	Industrial DC/DC Converter Primary Switch
Use Scenario: High-frequency (100–200 kHz) hard-switched H-bridge inverter converting 30–60 V PV string output to 230 V AC. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge leg; switched by isolated gate driver with 100 ns propagation delay. Use Value: 0.0375 Ω R_DS(on) limits conduction loss to <1.4 W at 18 A RMS; 175 °C rating sustains operation in sealed outdoor enclosures.	Use Scenario: 48 V input, 12 V output, 100 kHz phase-shifted full-bridge DC/DC converter for telecom power shelves. IC Role / Device Role / Timing Role: Primary-side switching transistor; operated with zero-voltage switching (ZVS) assisted by body diode soft recovery. Use Value: Low Q_rr (0.51–1 μC) and fast t_rr minimize ZVS dead-time penalty and reduce circulating current losses.
Motor Drive Half-Bridge Switch	Server PSU Synchronous Rectifier
Use Scenario: 24–48 V BLDC motor control in automated guided vehicles (AGVs), requiring 30 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; driven by bootstrap gate driver with 12 V gate bias. Use Value: 1.2 °C/W R_thJC enables direct heatsink mounting; 35.1 A I_D rating supports 3× peak motor surge without derating.	Use Scenario: Secondary-side synchronous rectification in 48 V–12 V server VRM, operating at 300–600 kHz. IC Role / Device Role / Timing Role: N-channel rectifier controlled by adaptive timing controller sensing drain-source voltage polarity. Use Value: V_GS(th) = 2–4 V ensures reliable turn-on with 4.5 V gate drive; low R_DS(on) cuts rectifier loss by >40 % vs. Schottky diodes.

Solar Microinverter DC/AC Stage

Industrial DC/DC Converter Primary Switch

Use Scenario: High-frequency (100–200 kHz) hard-switched H-bridge inverter converting 30–60 V PV string output to 230 V AC.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge leg; switched by isolated gate driver with 100 ns propagation delay.

Use Value: 0.0375 Ω R_DS(on) limits conduction loss to <1.4 W at 18 A RMS; 175 °C rating sustains operation in sealed outdoor enclosures.

Use Scenario: 48 V input, 12 V output, 100 kHz phase-shifted full-bridge DC/DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Primary-side switching transistor; operated with zero-voltage switching (ZVS) assisted by body diode soft recovery.

Use Value: Low Q_rr (0.51–1 μC) and fast t_rr minimize ZVS dead-time penalty and reduce circulating current losses.

Motor Drive Half-Bridge Switch

Server PSU Synchronous Rectifier

Use Scenario: 24–48 V BLDC motor control in automated guided vehicles (AGVs), requiring 30 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; driven by bootstrap gate driver with 12 V gate bias.

Use Value: 1.2 °C/W R_thJC enables direct heatsink mounting; 35.1 A I_D rating supports 3× peak motor surge without derating.

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V server VRM, operating at 300–600 kHz.

IC Role / Device Role / Timing Role: N-channel rectifier controlled by adaptive timing controller sensing drain-source voltage polarity.

Use Value: V_GS(th) = 2–4 V ensures reliable turn-on with 4.5 V gate drive; low R_DS(on) cuts rectifier loss by >40 % vs. Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 0.05 Ω @ 10 V; Q_g = 25 nC; TO-220 package; no 100 % UIS test stated.	Limited to lower-power (<200 W) applications due to higher R_DS(on) and inferior thermal resistance (R_thJC ≈ 2.5 °C/W).	Select when cost sensitivity outweighs thermal performance and avalanche ruggedness requirements.
IXTP26N20P	R_DS(on) = 0.042 Ω @ 10 V; Q_g = 28 nC; TO-220FP package; rated for 150 °C T_J only.	Not suitable for sealed 175 °C ambient environments; higher Q_g increases gate drive loss at >300 kHz.	Prefer for legacy TO-220 layouts where board space permits larger footprint and thermal pad is not feasible.

Compared with STP20NM20 and IXTP26N20P, the SUM90330E-GE3 delivers superior thermal management (1.2 °C/W vs. ≥2.5 °C/W), higher avalanche energy rating (54.45 mJ), and tighter V_GS(th) distribution - making it the preferred choice for compact, high-reliability 200 V switching in solar, motor, and server power systems.

Availability

SUM90330E-GE3 is available at Aetrix Electronics and suitable for solar microinverters, industrial motor drives, and server DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SUM90330E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SUM90330E-GE3 belongs to Vishay's ThunderFET® family - engineered specifically for high-efficiency, high-reliability switching in renewable energy, industrial automation, and data center power systems.

FAQ

What is the maximum continuous drain current for SUM90330E-GE3 at 125 °C case temperature?

The SUM90330E-GE3 supports 20.3 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 1.2 °C/W R_thJC and 175 °C T_J(max), ensuring safe operation without exceeding junction temperature under sustained load.

Does SUM90330E-GE3 have a fully rated avalanche capability, and what is its single-pulse rating?

Yes, the SUM90330E-GE3 is 100 % UIS (unclamped inductive switching) tested. Its single-pulse avalanche rating is I_AS = 33 A with L = 0.1 mH, delivering E_AS = 54.45 mJ - verified per JEDEC JESD24-1. This ruggedness supports reliable operation in flyback and LLC converters subject to transient overloads.

What is the gate threshold voltage range for SUM90330E-GE3, and how does it affect gate driver selection?

The SUM90330E-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA. This allows compatibility with 3.3 V and 5 V logic-level gate drivers without level-shifting, while maintaining sufficient noise margin to prevent spurious turn-on in noisy industrial environments.

Can SUM90330E-GE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, the SUM90330E-GE3 is qualified for synchronous rectification. Its body diode features t_rr = 111–170 ns, Q_rr = 0.51–1 μC, and V_SD = 0.8–1.5 V at I_F = 7 A, enabling efficient commutation with minimal reverse recovery loss - critical for high-frequency secondary-side switching in DC/DC converters.

What is the thermal resistance from junction to ambient for SUM90330E-GE3 when mounted on a 1" square FR4 PCB?

When mounted on a 1" square FR4 PCB (per note c in datasheet), the SUM90330E-GE3 exhibits R_thJA = 40 °C/W. This value assumes standard copper pour and defines the upper bound for natural-convection thermal design; actual performance improves significantly with heatsink attachment to the drain tab.

SUM90330E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 35.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 37.5mOhm @ 12.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1172 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM90330E-GE3 FAQ

1.How can I place an order for SUM90330E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM90330E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM90330E-GE3 reliable?

The price and inventory of SUM90330E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM90330E-GE3 is usually 5 days.

3.What payment methods are accepted for SUM90330E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM90330E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM90330E-GE3?

SUM90330E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM90330E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM90330E-GE3?

For technical support, including SUM90330E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM90330E-GE3 requirements.

6.How does Aetrix verify that SUM90330E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUM90330E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM90330E-GE3 meets industry standards.

7.What is the process for return or replacement of SUM90330E-GE3?

All SUM90330E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM90330E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM90330E-GE3 part is unused and in its original packaging.

Return procedure for SUM90330E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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