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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUM90N04-3M3P-E3

Name: SUM90N04-3M3P-E3
Brand: Vishay Siliconix
SKU: SUM90N04-3M3P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUM90N04-3M3P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUM90N04-3M3P-E3.pdf

Description:: MOSFET N-CH 40V 90A TO263

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Product details

Overview

SUM90N04-3M3P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, with R_DS(on) of 3.3 mΩ at V_GS = 10 V and 4.1 mΩ at V_GS = 4.5 V, delivering 90 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency synchronous rectifier in secondary-side DC/DC converters for server power supplies and industrial power tools.

For engineers reviewing the SUM90N04-3M3P-E3 datasheet, SUM90N04-3M3P-E3 pinout, SUM90N04-3M3P-E3 application, or SUM90N04-3M3P-E3 equivalent, key selection criteria include its low gate charge (87 nC typ.), robust avalanche rating (180 mJ), TO-263 package thermal performance (R_thJC = 1 °C/W), and 100% R_g and UIS testing for production reliability.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current, medium-voltage applications. Its gate threshold voltage (1–2.5 V) enables compatibility with 4.5 V logic-level drive, while the 5286 pF input capacitance and 283 pF reverse transfer capacitance support stable operation in hard-switched topologies up to several hundred kHz.

The device features an integrated body diode with 0.72–1.2 V forward voltage at 10 A and 42–63 ns reverse recovery time, enabling efficient freewheeling in synchronous buck and LLC resonant converters. Its SOA is limited by package thermal constraints above 100 μs, with derating required per the published safe operating area curve.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage before breakdown; defines use in ≤40 V bus systems like 12 V/24 V/36 V industrial and server rails.
R_DS(on) @ 10 V	3.3 mΩ max - Enables <1 W conduction loss at 50 A, critical for high-efficiency secondary-side rectification.
Q_g	87 nC typ. - Low gate charge reduces driver power and switching loss, supporting >300 kHz operation with standard gate drivers.
I_D (cont.)	90 A @ T_C = 25 °C - Sustains high output current in compact TO-263 packages when heatsinked to PCB copper.
E_AS	180 mJ - Rated single-pulse avalanche energy ensures ruggedness against inductive switching transients without external snubbers.
R_thJC	1 °C/W - Junction-to-case thermal resistance allows direct thermal path to heatsink or copper pour, enabling high-power density designs.
V_GS(th)	1–2.5 V - Logic-level gate threshold supports direct drive from microcontrollers or PWM controllers without level-shifting.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires low-impedance path to minimize ringing; connected to driver IC output via short trace.
D (Drain)	High-side current path	Electrically and thermally tied to large PCB copper area; serves as primary heat dissipation path and high-voltage node.
S (Source)	Reference and return path	Forms common reference for gate drive and current sensing; connects to power ground plane with minimal inductance.

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) in TO-263 package, reducing conduction losses by >30% vs. planar MOSFETs at same voltage rating.
100% R_g tested	Ensures consistent gate resistance (0.5–5.4 Ω), critical for predictable turn-on/turn-off timing and EMI control.
100% UIS tested	Verifies ruggedness under unclamped inductive switching stress, eliminating field failures in motor drive and DC/DC converter outputs.
Lead (Pb)-free, RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), enabling standard reflow without baking or special handling.
Body diode Q_rr	52–78 nC reverse recovery charge - Enables soft-recovery behavior in synchronous rectification, minimizing shoot-through risk.

Applications

Server Secondary-Side Rectification	Industrial DC/DC Converter
Use Scenario: High-current 12 V output stage in 48 V–12 V intermediate bus converter for AI accelerators. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%. Use Value: 3.3 mΩ R_DS(on) cuts rectifier loss by ~65% vs. 0.5 V Schottky, directly increasing full-load efficiency by 1.2–1.8%.	Use Scenario: Output switch in isolated 24 V–5 V flyback converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side active clamp switch managing leakage energy and enabling ZVS operation. Use Value: 180 mJ avalanche rating absorbs clamp energy without snubber, simplifying layout and improving reliability over discrete clamp circuits.
Power Tool Battery Management	Telecom Hot-Swap Circuit
Use Scenario: High-side main switch in 40 V cordless drill battery pack protection circuit. IC Role / Device Role / Timing Role: Load switch controlling power delivery from Li-ion stack to motor driver during startup and fault conditions. Use Value: 90 A continuous rating supports peak motor currents >70 A; 1 °C/W R_thJC enables direct thermal coupling to metal-core PCB for sustained burst operation.	Use Scenario: Inrush current limiter and hot-swap controller in 48 V telecom shelf power distribution unit. IC Role / Device Role / Timing Role: OR-ing FET in redundant power feed, conducting only when upstream voltage exceeds threshold. Use Value: Low 1–2.5 V V_GS(th) allows precise turn-on control with simple comparator-based gate drive, minimizing voltage drop across FET during steady-state operation.

Server Secondary-Side Rectification

Industrial DC/DC Converter

Use Scenario: High-current 12 V output stage in 48 V–12 V intermediate bus converter for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%.

Use Value: 3.3 mΩ R_DS(on) cuts rectifier loss by ~65% vs. 0.5 V Schottky, directly increasing full-load efficiency by 1.2–1.8%.

Use Scenario: Output switch in isolated 24 V–5 V flyback converter powering PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side active clamp switch managing leakage energy and enabling ZVS operation.

Use Value: 180 mJ avalanche rating absorbs clamp energy without snubber, simplifying layout and improving reliability over discrete clamp circuits.

Power Tool Battery Management

Telecom Hot-Swap Circuit

Use Scenario: High-side main switch in 40 V cordless drill battery pack protection circuit.

IC Role / Device Role / Timing Role: Load switch controlling power delivery from Li-ion stack to motor driver during startup and fault conditions.

Use Value: 90 A continuous rating supports peak motor currents >70 A; 1 °C/W R_thJC enables direct thermal coupling to metal-core PCB for sustained burst operation.

Use Scenario: Inrush current limiter and hot-swap controller in 48 V telecom shelf power distribution unit.

IC Role / Device Role / Timing Role: OR-ing FET in redundant power feed, conducting only when upstream voltage exceeds threshold.

Use Value: Low 1–2.5 V V_GS(th) allows precise turn-on control with simple comparator-based gate drive, minimizing voltage drop across FET during steady-state operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; higher R_thJA (62 °C/W).	Lower switching speed due to higher Q_g; less suitable for >200 kHz converters; requires larger heatsink in same footprint.	Prefer SUM90N04-3M3P-E3 where board space, thermal performance, or high-frequency operation is critical.
STP90NF04L	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 95 nC; TO-220FP package; no 100% UIS test guarantee.	Higher gate charge increases driver loss; lower avalanche rating (120 mJ); not qualified for repetitive UIS stress.	Choose SUM90N04-3M3P-E3 for mission-critical industrial or telecom applications requiring verified avalanche ruggedness.

Compared with IRF1404PBF and STP90NF04L, the SUM90N04-3M3P-E3 delivers superior thermal performance (R_thJC = 1 °C/W), lower gate charge for faster switching, and factory-verified UIS robustness-making it optimal for high-density, high-reliability power conversion where thermal headroom and transient immunity are design priorities.

Availability

SUM90N04-3M3P-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial DC/DC converters, and cordless power tool battery management systems requiring stable component supply and long-term manufacturing continuity.

Supply support for SUM90N04-3M3P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUM90N04-3M3P-E3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, medium-voltage switching in enterprise and industrial power systems where low R_DS(on), fast switching, and avalanche reliability are essential.

FAQ

What is the maximum continuous drain current rating for SUM90N04-3M3P-E3 at 70 °C case temperature?

The SUM90N04-3M3P-E3 supports 90 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to its robust TO-263 package thermal design and low R_DS(on). This reflects the device's ability to sustain full current under elevated thermal conditions when properly mounted on ≥1"² FR-4 PCB with adequate copper pour, as specified in the absolute maximum ratings table.

Does SUM90N04-3M3P-E3 support logic-level gate drive?

Yes, SUM90N04-3M3P-E3 has a gate threshold voltage range of 1–2.5 V, enabling reliable turn-on with 3.3 V or 5 V logic-level signals. Its R_DS(on) remains low (4.1 mΩ max) at V_GS = 4.5 V, making it suitable for direct drive from microcontrollers or PWM controllers without gate driver ICs in many applications.

What is the thermal resistance from junction to ambient for SUM90N04-3M3P-E3 in standard PCB mounting?

The SUM90N04-3M3P-E3 has a junction-to-ambient thermal resistance (R_thJA) of 40 °C/W when mounted on a 1" square FR-4 PCB. This value assumes standard double-sided copper layout with thermal vias; actual performance improves significantly with enhanced heatsinking, such as direct attachment of the drain tab to a large internal copper plane or external heatsink.

Is SUM90N04-3M3P-E3 qualified for automotive applications?

No, SUM90N04-3M3P-E3 is not AEC-Q101 qualified and is not recommended for automotive applications. Vishay explicitly states in its legal disclaimer that products like SUM90N04-3M3P-E3 are not designed for medical, life-saving, or life-sustaining applications-including automotive safety systems-where failure could result in personal injury or death.

What does "100% R_g tested" mean for SUM90N04-3M3P-E3?

"100% R_g tested" means every SUM90N04-3M3P-E3 unit undergoes production screening for gate resistance, verifying it falls within the specified 0.5–5.4 Ω range. This ensures consistent switching behavior, predictable gate drive requirements, and reduced risk of oscillation or timing variation across production lots-critical for high-volume power supply manufacturing.

SUM90N04-3M3P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 131 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5286 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUM90N04-3M3P-E3 FAQ

1.How can I place an order for SUM90N04-3M3P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUM90N04-3M3P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUM90N04-3M3P-E3 reliable?

The price and inventory of SUM90N04-3M3P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM90N04-3M3P-E3 is usually 5 days.

3.What payment methods are accepted for SUM90N04-3M3P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM90N04-3M3P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUM90N04-3M3P-E3?

SUM90N04-3M3P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUM90N04-3M3P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUM90N04-3M3P-E3?

For technical support, including SUM90N04-3M3P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM90N04-3M3P-E3 requirements.

6.How does Aetrix verify that SUM90N04-3M3P-E3 is sourced from the original manufacturer or authorized distributors?

All SUM90N04-3M3P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM90N04-3M3P-E3 meets industry standards.

7.What is the process for return or replacement of SUM90N04-3M3P-E3?

All SUM90N04-3M3P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM90N04-3M3P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUM90N04-3M3P-E3 part is unused and in its original packaging.

Return procedure for SUM90N04-3M3P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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